MMBR951

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MMBR951/D The RF Line NPN Silicon Low Noise, High-Frequency Transistors Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages. • Fully Implanted Base and Emitter Structure • 18 Finger, 1.25 Micron Geometry with Gold Top Metal • Gold Sintered Back Metal • Available in tape and reel packaging options: T1 suffix = 3,000 units per reel MMBR951 MRF957 SERIES ARCHIVE INFORMATION CASE 318–08, STYLE 6 SOT–23 LOW PROFILE MMBR951LT1 CASE 419–02, STYLE 3 MRF957T1 REV 11 MOTOROLA RF © Motorola, Inc. 1999 DEVICE DATA For More Information On This Product, Go to: www.freescale.com MMBR951 MRF957 1 ARCHIVE INFORMATION IC = 100 mA LOW NOISE HIGH–FREQUENCY TRANSISTORS Freescale Semiconductor, Inc... Freescale Semiconductor, Inc. MAXIMUM RATINGS0 Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Power Dissipation (1) TC = 75°C Derate linearly above Tcase = 75°C @ Collector Current — Continuous (2) Maximum Junction Temperature Storage Temperature Thermal Resistance, Junction to Case Symbol VCEO VCBO VEBO PD(max) IC TJmax Tstg RθJC MMBR951LT1 10 20 1.5 0.322 4.29 100 150 – 55 to +150 233 MRF957T1 10 20 15 0.227 3.03 100 150 – 55 to +150 330 Unit Vdc Vdc Vdc Watts mW/°C mA °C °C °C/W DEVICE MARKING MMBR951LT1 = 7Z MRF957T1 = B ARCHIVE INFORMATION Freescale Semiconductor, Inc... ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (3) Collector–Emitter Breakdown Voltage (IC = 0.1 mA, IB = 0) Collector–Base Breakdown Voltage (IC = 0.1 mA, IE = 0) Emitter Cutoff Current (VEB = 1.0 V, IC = 0) Collector Cutoff Current (VCB = 10 V, IE = 0) V(BR)CEO V(BR)CBO IEBO ICBO 10 20 — — 13 25 — — — — 0.1 0.1 Vdc Vdc µAdc µAdc ON CHARACTERISTICS (3) DC Current Gain (VCE = 6.0 V, IC = 5.0 mA) hFE 50 — 200 — DYNAMIC CHARACTERISTICS Collector–Base Capacitance (VCB = 10 V, IE = 0, f = 1.0 MHz) Current Gain — Bandwidth Product (VCE = 6.0 V, IC = 30 mA, f = 1.0 GHz) MMBR951LT1 MRF957T1 Ccb fT — — 8.0 9.0 — — — 0.45 1.0 pF GHz NOTES: 1. To calculate the junction temperature use TJ = (PD x RθJA) + TCASE. Case temperature measured on collector lead immediately adjacent to body of package. 2. IC — Continuous (MTBF ≈ 10 years). 3. Pulse width ≤ 300 µs, duty cycle ≤ 2% pulsed. MMBR951 MRF957 2 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA ARCHIVE INFORMATION Freescale Semiconductor, Inc. PERFORMANCE CHARACTERISTICS MMBR951LT1 Conditions Insertion Gain (VCE = 6.0 V, IC = 30 mA, f = 1.0 GHz) (VCE = 6.0 V, IC = 30 mA, f = 2.0 GHz) (VCE = 5.0 V, IC = 30 mA, f = 1.5 GHz) Maximum Unilateral Gain (1) (VCE = 8.0 V, IC = 30 mA, f = 1.0 GHz) (VCE = 8.0 V, IC = 30 mA, f = 2.0 GHz) (VCE = 5.0 V, IC = 30 mA, f = 1.5 GHz) Noise Figure — Minimum (Figure 9) (VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz) (VCE = 6.0 V, IC = 5.0 mA, f = 2.0 GHz) (VCE = 6.0 V, IC = 5.0 mA, f = 1.5 GHz) Symbol Min |S21|2 — — — GU max — — — NFMIN — — — GNF — — — NF50 Ω |S21|2 (1 – |S11|2)(1 – |S22|2) — 13 7.5 — 1.9 — — — 2.8 — — — — 11.8 — 9.0 1.9 — — — 2.8 dB 1.3 2.1 — — — — — — — 1.5 — 2.0 — — — 14 8.0 — — — — — — — 14 — 10.8 — — — dB 12.5 7.0 — — — — — — — 13.3 — 10.1 — — — dB Typ Max Min Typ Max dB MRF957T1 Unit ARCHIVE INFORMATION Noise Figure — 50 ohm Source (VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz) NOTE: 1. Maximum Unilateral Gain is GUmax = MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MMBR951 MRF957 3 ARCHIVE INFORMATION Freescale Semiconductor, Inc... Associated Gain at Minimum NF (Figure 9) (VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz) (VCE = 6.0 V, IC = 5.0 mA, f = 2.0 GHz) (VCE = 6.0 V, IC = 5.0 mA, f = 1.5 GHz) dB Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS MMBR951LT1 10 5 CCB , CAPACITANCE (pF) f = 1 MHz hFE, DC CURRENT GAIN VCE = 8 V 2 1 0.5 200 100 50 0.2 0.1 1 2 5 10 20 VCB, REVERSE VOLTAGE (V) 50 100 20 10 1 2 3 5 10 20 IC, COLLECTOR CURRENT (mA) 50 100 ARCHIVE INFORMATION Figure 1. Collector–Base Capacitance versus Voltage 16 14 12 10 8 6 4 Figure 2. DC Current Gain versus Collector Current 12 10 8 6 4 2 0 VCE = 8 V 1 2 3 5 7 10 20 30 70 100 MMBR951LT1 VCE = 8 V f = 1 GHz 1 2 3 5 7 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. Gain Bandwidth Product versus Collector Current Figure 4. Insertion Gain versus Collector Current MMBR951 MRF957 4 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA ARCHIVE INFORMATION Freescale Semiconductor, Inc... f T, GAIN BANDWIDTH PRODUCT (GHz) |S 21| 2, INSERTION GAIN (dB) Freescale Semiconductor, Inc. TYPICAL FORWARD INSERTION GAIN AND MAXIMUM UNILATERAL GAIN versus FREQUENCY 30 |S 21| 2, INSERTION GAIN (dB) GU max, MAXIMUM UNILATERAL GAIN (dB) 25 20 GUmax 15 10 5 0 0.1 |S21|2 MMBR951LT1 VCE = 8 V IC = 30 mA G NF, ASSOCIATED GAIN AT MINIMUM (dB) 24 20 16 12 8 4 NFmin 0 0.1 0.2 0.3 0.5 0.7 1 2 3 5 CIRCUIT — FIGURE 9 NF50 Ω MMBR951LT1 GNF NF, NOISE FIGURE (dB) 6 5 4 3 2 1 0 VCE = 6 V IC = 5 mA ARCHIVE INFORMATION Freescale Semiconductor, Inc... 0.2 0.3 0.5 0.7 1 2 3 5 f, FREQUENCY (GHz) f, FREQUENCY, (GHz) Figure 6. MMBR951LT1 Figure 5. Typical Noise Figure and Associated Gain versus Frequency 6 5 NF, NOISE FIGURE (dB) 4 3 2 1 0 NFmin at 1 GHz MMBR951LT1 CIRCUIT — FIGURE 9 VCE = 6 V NFmin at 2 GHz 1 2 3 5 7 10 20 30 50 IC, COLLECTOR CURRENT (mA) Figure 7. Typical Noise Figure versus Collector Current VCE = 6 Vdc VBE D.U.T. RF OUTPUT RF INPUT *BIAS **SLUG TUNER NETWORK **SLUG TUNER *BIAS NETWORK *HP11590B **MICROLAB/FXR **SF – 11N < 1 GHz **SF – 31IN ≥ 1 GHz Figure 8. Functional Circuit Schematic (All Devices) MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MMBR951 MRF957 5 ARCHIVE INFORMATION Freescale Semiconductor, Inc. VCE (Volts) 6.0 IC (mA) 5.0 f (MHz) 100 500 1000 2000 3000 100 500 1000 2000 3000 100 500 1000 2000 3000 100 500 1000 2000 3000 100 500 1000 2000 3000 100 500 1000 2000 3000 100 500 1000 2000 3000 100 500 1000 2000 3000 100 500 1000 2000 3000 100 500 1000 2000 3000 S11 |S11| 0.82 0.50 0.39 0.32 0.36 0.66 0.38 0.32 0.26 0.31 0.49 0.32 0.29 0.24 0.28 0.40 0.30 0.29 0.24 0.30 0.38 0.37 0.36 0.33 0.38 0.83 0.51 0.38 0.31 0.35 0.67 0.37 0.30 0.25 0.30 0.51 0.31 0.28 0.23 0.27 0.42 0.31 0.27 0.23 0.28 0.39 0.36 0.35 0.32 0.37 ∠φ – 36.6 – 119 – 162 150 110 – 54 – 138 – 176 142 105 – 76 – 153 175 137 102 – 94 – 162 170 134 101 – 126 – 176 163 130 98 – 35 – 117 – 160 151 110 – 52 – 135 – 173 143 105 – 72 – 150 177 138 103 – 87 – 159 172 135 102 – 119 – 174 164 131 100 |S21| 14.0 6.6 3.5 1.9 1.4 22.6 7.8 4.0 2.2 1.6 30 8.3 4.3 2.3 1.6 33 8.4 4.3 2.3 1.6 31 7.3 3.7 2.0 1.4 13.9 6.7 3.6 1.9 1.4 23 7.9 4.1 2.2 1.6 30 8.5 4.3 2.3 1.6 33 8.6 4.4 2.3 1.6 32 7.4 3.8 2.0 1.4 S21 ∠φ 153 104 81 57 40 142 96 78 57 41 131 92 77 57 42 125 90 76 56 41 116 77.6 73.4 52 37 154 104 82 58 41 143 97 80 57 42 131 92 77 57 42 125 90 76 57 41 117 87 74 53 38 |S12| 0.04 0.07 0.11 0.21 0.31 0.03 0.07 0.13 0.22 0.32 0.01 0.08 0.11 0.24 0.34 0.03 0.07 0.12 0.23 0.35 0.03 0.05 0.12 0.22 0.34 0.04 0.08 0.10 0.20 0.32 0.02 0.07 0.11 0.21 0.31 0.02 0.07 0.13 0.22 0.31 0.02 0.07 0.11 0.22 0.31 0.02 0.06 0.11 0.22 0.33 S12 ∠φ 44.7 48.2 55 66 66 60 55 71 70 64 85 76 67 71 63 87 84 80 71 66 74 84 84 78 69 92 51 72 73 71 96 64 78 74 67 68 75 76 72 64 71 71 74 73 65 31 84 78 81 70 |S22| 0.88 0.52 0.43 0.42 0.40 0.78 0.40 0.34 0.36 0.33 0.67 0.34 0.29 0.32 0.29 0.58 0.31 0.27 0.33 0.30 0.49 0.34 0.34 0.37 0.34 0.90 0.55 0.44 0.46 0.43 0.81 0.43 0.37 0.38 0.34 0.68 0.36 0.32 0.35 0.31 0.61 0.33 0.32 0.34 0.33 0.52 0.37 0.35 0.42 0.40 S22 ∠φ – 18.2 – 40 – 43 – 50 – 67 – 29 – 42 – 47 – 46 – 62 – 37 – 39 – 44 – 48 – 60 – 42 – 35 – 39 – 48 – 60 – 37 – 26 – 37 – 48 – 62 – 19 – 38 – 42 – 47 – 63 – 28 – 38 – 41 – 47 – 60 – 35 – 36 – 39 – 45 – 58 – 38 – 33 – 39 – 42 – 55 – 31 – 25 – 33 – 41 – 62 10 20 ARCHIVE INFORMATION Freescale Semiconductor, Inc... 30 60 8.0 5.0 10 20 30 60 Table 1. MMBR951LT1 Common Emitter S–Parameters MMBR951 MRF957 6 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA ARCHIVE INFORMATION Freescale Semiconductor, Inc. + j1 + j0.5 + j2 + j0.2 20 1.1 VCE = 6.0 V IC = 5.0 mA — AREA OF INSTABILITY f (GHz) 0.5 NF OPT (dB) ΓMS NF OPT 1.13 0.35 ∠ 68° Rn 9 K 0.68 19 18 17 1.3 1.5 1.7 – j0.2 ARCHIVE INFORMATION – j0.5 – j1 – j2 Figure 9. MMBR951LT1 Constant Gain and Noise Figure Contours (f = 0.5 GHz) + j1 + j0.5 + j2 + j0.2 VCE = 6.0 V IC = 5.0 mA — AREA OF INSTABILITY 1.6 1.8 2 – j0.2 f (GHz) 1.0 NF OPT (dB) ΓMS NF OPT 1.45 0.16 ∠ 124° Rn 8 K 0.97 15.8 15 14 1.5 – j0.5 – j1 – j2 Figure 10. MMBR951LT1 Constant Gain and Noise Figure Contours (f = 1.0 GHz) MRF957T1, T3 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MMBR951 MRF957 7 ARCHIVE INFORMATION Freescale Semiconductor, Inc... Freescale Semiconductor, Inc. VCE (Vdc) 6.0 IC (mA) 5.0 f (MHz) 1000 1500 NFmin (dB) 1.7 2.0 Γo (MAG, ANG) 0.27 ∠ 97 0.21 ∠ 54 rN (ohms) 0.2 0.28 Table 2. MRF957T1 Typical Noise Parameters TYPICAL CHARACTERISTICS MRF957T1 ARCHIVE INFORMATION C, CAPACITANCE (pF) Freescale Semiconductor, Inc... 2 1 Cib Cob Ccb 200 100 50 VCE = 6 V 0.5 0.2 0.1 1 2 5 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 20 10 1 2 5 10 20 30 IC, COLLECTOR CURRENT (mA) 100 Figure 11. Capacitance versus Voltage Figure 12. DC Current Gain versus Collector Current MMBR951 MRF957 8 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA ARCHIVE INFORMATION 3 h FE, DC CURRENT GAIN Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS MRF957T1 10 f T, GAIN-BANDWIDTH PRODUCT (GHz) VCE = 5 V f = 1 GHz G NF, ASSOCIATED GAIN (dB) 8 16 GNF VCE = 6 V f = 1 GHz 3 4 NF 2 1 0 0.1 1 10 IC, COLLECTOR CURRENT (mA) 100 1 2 5 10 20 30 IC, COLLECTOR CURRENT (mA) N F, NOISE FIGURE (dB) 20 6 12 4 8 2 ARCHIVE INFORMATION Figure 13. Gain–Bandwidth Product versus Collector Current 32 28 24 GAIN (dB) 20 16 12 8 4 0 0.1 0.2 0.3 0.5 1 f, FREQUENCY (GHz) |S21|2 2 3 5.1 0 0.3 MSG VCE = 6 V IC = 5 mA 25 Figure 14. Associated Gain versus Collector Current 5 20 GNF 4 N F, NOISE FIGURE (dB) 15 3 10 NF 5 VCE = 6 V IC = 5 mA 0.5 f, FREQUENCY (GHz) 1 2 1 0 1.5 Figure 15. Insertion Gain and Maximum Stable Power Gain versus Frequency VCE = 6.0 V IC = 5.0 mA f NF (GHz) OPT 1.0 Figure 16. Noise Figure and Associated Gain versus Frequency VCE = 6.0 V IC = 5.0 mA j1.0 K 0.91 j0.5 RN Γo 1.5 dB 0.27 ∠ 97° 10 j2.0 f NF (GHz) OPT 1.5 j1.0 j0.5 j2.0 RN K Γo 2.0 dB 0.21 ∠ 54° 14 1.02 OUTPUT INPUT j0.2 •15.2 15.0 14.0 Γo 1.5 • j0.2 Γ • ms 2.0 2.3 11.8 11.0 10.0 2.5 3.0 o •2.0 Γ – j0.2 – j0.2 AREA OF INSTABILITY – j0.5 – j1.0 0.2 0.5 1 2 – j2.0 – j0.5 – j1.0 0.2 0.5 1 2 – j2.0 Figure 17. Constant Gain and Noise Figure Contours f = 1.0 GHz Figure 18. Constant Gain and Noise Figure Contours f = 1.5 GHz MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MMBR951 MRF957 9 ARCHIVE INFORMATION Freescale Semiconductor, Inc... G NF , ASSOCIATED GAIN (dB) Freescale Semiconductor, Inc. VCE (Vdc) 2.0 IC (mA) 1.0 f (MHz) 100 200 500 1000 2000 3000 100 200 500 1000 2000 3000 100 200 500 1000 2000 3000 100 200 500 1000 2000 3000 100 200 500 1000 2000 3000 100 200 500 1000 2000 3000 S11 |S11| 0.959 0.922 0.825 0.690 0.600 0.640 0.922 0.862 0.713 0.586 0.506 0.546 0.815 0.708 0.541 0.461 0.406 0.438 0.667 0.559 0.447 0.405 0.360 0.390 0.435 0.421 0.398 0.382 0.347 0.379 0.442 0.483 0.484 0.472 0.452 0.496 ∠φ – 19.22 – 38.32 – 81.94 – 125.83 – 174.02 – 147.15 – 24.97 – 48.55 – 96.45 – 137.24 – 179.54 – 144.80 – 39.45 – 71.89 – 121.43 – 155.05 – 169.75 – 139.42 – 57.75 – 95.89 – 140.52 – 166.70 – 162.90 – 134.95 – 99.80 – 135.04 – 162.97 – 179.33 – 155.68 – 130.21 – 131.87 – 155.78 – 173.89 – 172.69 – 149.80 – 126.23 |S21| 3.518 3.482 2.614 1.737 1.079 0.791 6.598 6.177 4.140 2.483 1.462 1.079 14.163 11.635 6.284 3.428 1.921 1.424 22.121 15.709 7.417 3.921 2.155 1.597 31.662 18.696 8.025 4.163 2.269 1.686 26.755 15.086 6.390 3.317 1.834 1.393 S21 ∠φ 166.25 153.75 122.98 93.40 63.65 50.62 162.54 147.47 116.09 90.37 64.47 49.98 153.09 133.50 104.78 85.44 65.04 51.41 142.36 121.54 98.06 82.59 65.25 52.60 125.82 108.07 91.81 79.67 64.55 52.60 118.52 103.17 88.79 76.81 60.68 48.59 |S12| 0.044 0.079 0.146 0.167 0.131 0.196 0.042 0.075 0.123 0.140 0.158 0.232 0.038 0.061 0.090 0.123 0.198 0.282 0.032 0.048 0.075 0.123 0.222 0.311 0.023 0.034 0.069 0.127 0.240 0.336 0.021 0.032 0.067 0.127 0.243 0.345 S12 ∠φ 78.43 69.06 44.99 30.15 44.93 80.39 75.55 64.60 43.92 38.71 57.00 74.13 70.19 58.57 49.12 54.90 65.80 69.61 64.38 57.27 58.00 66.07 69.45 68.14 62.49 64.74 71.43 74.17 72.04 67.80 62.60 66.87 74.30 76.73 72.97 68.81 |S22| 0.986 0.948 0.803 0.662 0.576 0.517 0.967 0.893 0.671 0.524 0.456 0.416 0.895 0.739 0.454 0.337 0.304 0.276 0.788 0.574 0.317 0.235 0.220 0.196 0.570 0.360 0.192 0.151 0.155 0.132 0.422 0.261 0.154 0.140 0.155 0.131 S22 ∠φ – 8.12 – 15.98 – 30.02 – 41.41 – 51.42 – 64.42 – 12.35 – 23.28 – 38.55 – 46.93 – 51.97 – 61.22 – 22.63 – 38.46 – 52.31 – 56.38 – 54.16 – 57.77 – 34.26 – 52.06 – 63.32 – 65.49 – 57.93 – 57.79 – 51.69 – 68.74 – 75.85 – 77.73 – 63.30 – 60.40 – 56.23 – 70.51 – 73.64 – 74.96 – 66.57 – 71.10 (continued) 2.0 5.0 ARCHIVE INFORMATION 10 30 60 Table 3. MRF957T1 Typical Common Emitter S–Parameters MMBR951 MRF957 10 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA ARCHIVE INFORMATION Freescale Semiconductor, Inc... Freescale Semiconductor, Inc. MRF957T1 VCE (Vdc) 5.0 IC (mA) 1.0 f (MHz) 100 200 500 1000 2000 3000 100 200 500 1000 2000 3000 100 200 500 1000 2000 3000 100 200 500 1000 2000 3000 100 200 500 1000 2000 3000 100 200 500 1000 2000 3000 S11 |S11| 0.965 0.931 0.835 0.694 0.583 0.615 0.932 0.875 0.726 0.582 0.483 0.515 0.836 0.731 0.539 0.438 0.364 0.392 0.704 0.577 0.421 0.361 0.307 0.332 0.559 0.453 0.358 0.324 0.278 0.306 0.492 0.412 0.345 0.319 0.277 0.305 ∠φ – 17.73 – 35.39 – 77.08 – 120.78 – 170.80 – 148.45 – 22.38 – 44.00 – 89.77 – 131.10 – 176.30 – 146.92 – 34.35 – 63.59 – 112.00 – 147.18 – 175.10 – 142.26 – 49.02 – 83.93 – 129.59 – 158.62 – 168.57 – 137.50 – 66.34 – 103.91 – 143.87 – 167.05 – 163.88 – 133.94 – 73.65 – 110.53 – 147.89 – 169.39 – 162.38 – 133.57 |S21| 3.508 3.495 2.680 1.820 1.133 0.813 6.532 6.217 4.314 2.638 1.544 1.117 14.112 11.971 6.737 3.710 2.050 1.501 22.526 16.647 8.120 4.290 2.330 1.706 30.018 19.598 8.835 4.595 2.462 1.809 32.055 20.121 8.900 4.646 2.492 1.821 S21 ∠φ 167.36 155.78 126.50 97.22 67.35 53.19 164.05 150.00 119.58 93.76 67.35 52.27 155.49 137.05 107.93 88.06 67.58 53.59 145.79 125.23 100.71 84.82 67.52 54.85 136.00 116.12 96.19 83.08 67.27 55.45 131.68 113.25 94.88 82.13 67.55 55.24 |S12| 0.035 0.065 0.122 0.143 0.115 0.182 0.034 0.061 0.106 0.122 0.140 0.208 0.031 0.052 0.080 0.110 0.175 0.251 0.027 0.042 0.069 0.109 0.196 0.277 0.023 0.036 0.064 0.112 0.208 0.291 0.022 0.033 0.062 0.113 0.210 0.295 S12 ∠φ 78.18 71.66 48.12 33.67 50.88 85.71 77.81 67.15 47.42 41.23 60.85 78.88 71.72 61.40 51.32 57.59 68.31 73.36 67.46 59.78 60.52 67.54 71.46 71.05 64.88 61.80 68.23 72.95 72.96 70.31 64.17 64.60 69.52 74.20 73.10 70.42 |S22| 0.990 0.958 0.839 0.713 0.629 0.565 0.975 0.914 0.724 0.586 0.521 0.479 0.920 0.785 0.522 0.408 0.383 0.357 0.831 0.634 0.385 0.305 0.305 0.288 0.720 0.501 0.298 0.247 0.263 0.249 0.669 0.459 0.278 0.234 0.255 0.239 S22 ∠φ – 6.80 – 13.35 – 25.23 – 35.51 – 44.48 – 55.47 – 9.92 – 18.98 – 31.79 – 39.20 – 43.55 – 51.26 2.0 ARCHIVE INFORMATION 10 – 27.03 – 41.45 – 47.31 – 46.57 – 42.00 – 42.21 – 35.45 – 48.64 – 49.15 – 47.12 – 41.09 – 39.38 – 37.70 – 49.28 – 48.58 – 46.64 – 40.63 – 38.73 20 30 Table 3. MRF957T1 Typical Common Emitter S–Parameters (continued) MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MMBR951 MRF957 11 ARCHIVE INFORMATION 5.0 Freescale Semiconductor, Inc... – 18.06 – 31.06 – 41.63 – 43.94 – 42.49 – 45.46 Freescale Semiconductor, Inc. PACKAGE DIMENSIONS A L 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. BS 1 2 V G C D H K J ARCHIVE INFORMATION STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR CASE 318–08 ISSUE AF MMBR951LT1, MMBR951ALT1 A L 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.071 0.087 0.045 0.053 0.035 0.049 0.012 0.016 0.047 0.055 0.000 0.004 0.004 0.010 0.017 REF 0.026 BSC 0.028 REF 0.031 0.039 0.079 0.087 0.012 0.016 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.90 1.25 0.30 0.40 1.20 1.40 0.00 0.10 0.10 0.25 0.425 REF 0.650 BSC 0.700 REF 0.80 1.00 2.00 2.20 0.30 0.40 S 1 2 B V G D C 0.05 (0.002) RN K J H DIM A B C D G H J K L N R S V CASE 419–02 ISSUE J MRF957T1 STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR MMBR951 MRF957 12 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA ARCHIVE INFORMATION Freescale Semiconductor, Inc... DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 Freescale Semiconductor, Inc. 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