MMBT2369LT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT2369LT1/D Switching Transistors NPN Silicon 1 BASE COLLECTOR 3 MMBT2369LT1 MMBT2369ALT1* *Motorola Preferred Device MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCES VCBO VEBO IC Value 15 40 40 4.5 200 2 EMITTER Unit Vdc Vdc Vdc Vdc mAdc 1 2 3 CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING MMBT2369LT1 = M1J; MMBT2369ALT1 = 1JA ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (3) (IC = 10 mAdc, IB = 0) Collector – Emitter Breakdown Voltage (IC = 10 µAdc, VBE = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0, TA = 150°C) Collector Cutoff Current (VCE = 20 Vdc, VBE = 0) 1. FR– 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. Thermal Clad is a trademark of the Bergquist Company. Preferred devices are Motorola recommended choices for future use and best overall value. V(BR)CEO 15 V(BR)CES 40 V(BR)CBO 40 V(BR)EBO 4.5 ICBO — — ICES MMBT2369A — — 0.4 — — 0.4 30 — — — — — — — — Vdc Vdc Vdc Vdc µAdc µAdc    Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 MMBT2369LT1 MMBT2369ALT1 ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (3) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 0.35 Vdc) (IC = 10 mAdc, VCE = 0.35 Vdc, TA = –55°C) (IC = 30 mAdc, VCE = 0.4 Vdc) (IC = 100 mAdc, VCE = 2.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector – Emitter Saturation Voltage (3) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc, TA = +125°C) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) Base – Emitter Saturation Voltage (3) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc, TA = –55°C) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) hFE MMBT2369 MMBT2369A MMBT2369A MMBT2369A MMBT2369A MMBT2369 MMBT2369A VCE(sat) MMBT2369 MMBT2369A MMBT2369A MMBT2369A MMBT2369A VBE(sat) MMBT2369A MMBT2369A MMBT2369A MMBT2369A 0.7 — — — — — — — 0.85 1.02 1.15 1.60 — — — — — — — — — — 0.25 0.20 0.30 0.25 0.50 Vdc 40 — 40 20 30 20 20 — — — — — — — 120 120 — — — — — Vdc — SMALL– SIGNAL CHARACTERISTICS Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Small Signal CurrentGain (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) Cobo — hfe 5.0 — — — 4.0 — pF SWITCHING CHARACTERISTICS Storage Time (IB1 = IB2 = IC = 10 mAdc) Turn–On Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc) Turn–Off Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc) 3. Pulse Test: Pulse Width ts — ton — toff — 10 18 8.0 12 ns 5.0 13 ns ns v 300 ms, Duty Cycle v 2.0%. 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data MMBT2369LT1 MMBT2369ALT1 SWITCHING TIME EQUIVALENT TEST CIRCUITS FOR 2N2369, 2N3227 +10.6 V 0 –1.5 V t1 3V 270 Ω +10.75 V 0 –9.15 V < 1 ns PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% t1 270 Ω < 1 ns 3.3 k Cs* < 4 pF 3.3 k Cs* < 4 pF PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% Figure 1. ton Circuit — 10 mA Figure 3. toff Circuit — 10 mA +10.8 V –2 V 0 t1 10 V 95 Ω +11.4 V 0 –8.6 V t1 10 V 95 Ω < 1 ns 1k Cs* < 12 pF PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% < 1 ns PULSE WIDTH (t1) BETWEEN 10 AND 500 µs DUTY CYCLE = 2% 1k 1N916 Cs* < 12 pF Figure 2. ton Circuit — 100 mA Figure 4. toff Circuit — 100 mA * Total shunt capacitance of test jig and connectors. TURN–ON WAVEFORMS Vin 0 ton 10% Vout 90% Vin 3.3 kΩ 3.3 k 0.0023 µF 0.005 µF VBB + – 0.1 µF 50 Ω 0.0023 µF 0.005 µF 0.1 µF +V =3V – CC 220 Ω 0.1 µF Vout 0 TO OSCILLOSCOPE INPUT IMPEDANCE = 50 Ω RISE TIME = 1 ns TURN–OFF WAVEFORMS Vin Vout toff 10% 90% VBB = +12 V Vin = –15 V PULSE GENERATOR Vin RISE TIME < 1 ns SOURCE IMPEDANCE = 50 Ω PW ≥ 300 ns DUTY CYCLE < 2% 50 Ω Figure 5. Turn–On and Turn–Off Time Test Circuit 6 5 4 CAPACITANCE (pF) 3 Cib Cob TJ = 25°C LIMIT TYPICAL SWITCHING TIMES (nsec) 100 50 tr (VCC = 3 V) tf tr 10 5 ts VCC = 10 V βF = 10 VCC = 10 V VOB = 2 V 20 2 td 1 0.1 2 0.2 0.5 1.0 2.0 REVERSE BIAS (VOLTS) 5.0 10 1 2 5 10 20 IC, COLLECTOR CURRENT (mA) 50 100 Figure 6. Junction Capacitance Variations Figure 7. Typical Switching Times Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 MMBT2369LT1 MMBT2369ALT1 500 VCC = 10 V 25°C 100°C QT, βF = 10 QT, βF = 40 +5 V 100 0 50 QA, VCC = 10 V 20 10 1 2 5 10 20 IC, COLLECTOR CURRENT (mA) 50 100 QA, VCC = 3 V ∆V < 1 ns 4.3 k 270 VALUES REFER TO IC = 10 mA TEST 200 CHARGE (pC) t1 3V 10 pF MAX Cs* < 4 pF PULSE WIDTH (t1) = 5 µs DUTY CYCLE = 2% Figure 9. QT Test Circuit Figure 8. Maximum Charge Data C < COPT C COPT TIME C=0 +6 V 0 –4 V t1 10 V 980 < 1 ns 500 Cs* < 3 pF PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% Figure 10. Turn–Off Waveform VCE , MAXIMUM COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 11. Storage Time Equivalent Test Circuit 1.0 TJ = 25°C IC = 3 mA 0.6 IC = 10 mA IC = 30 mA IC = 50 mA IC = 100 mA 0.8 0.4 0.2 0.02 0.05 0.1 0.2 0.5 1 IB, BASE CURRENT (mA) 2 5 10 20 Figure 12. Maximum Collector Saturation Voltage Characteristics 4 Motorola Small–Signal Transistors, FETs and Diodes Device Data MMBT2369LT1 MMBT2369ALT1 200 hFE , MINIMUM DC CURRENT GAIN TJ = 125°C 100 75°C 25°C –15°C 50 –55°C VCE = 1 V TJ = 25°C and 75°C 20 1 2 5 10 IC, COLLECTOR CURRENT (mA) 20 50 100 Figure 13. Minimum Current Gain Characteristics 1.4 V(sat) , SATURATION VOLTAGE (VOLTS) 1.2 1.0 0.8 0.6 0.4 0.2 βF = 10 TJ = 25°C COEFFICIENT (mV/ °C) MAX VBE(sat) 1.0 0.5 0 –0.5 –1.0 –1.5 θVB for VBE(sat) MAX VCE(sat) 1 2 5 10 20 IC, COLLECTOR CURRENT (mA) 50 100 –2.0 –2.5 0 10 20 30 40 50 60 70 IC, COLLECTOR CURRENT (mA) 80 90 100 θVC θVB θVC for VCE(sat) APPROXIMATE DEVIATION FROM NOMINAL –55°C to +25°C ±0.15 mV/°C ±0.4 mV/°C 25°C to 125°C ±0.15 mV/°C ±0.3 mV/°C (25°C to 125°C) (–55°C to +25°C) MIN VBE(sat) (–55°C to +25°C) (25°C to 125°C) Figure 14. Saturation Voltage Limits Figure 15. Typical Temperature Coefficients Motorola Small–Signal Transistors, FETs and Diodes Device Data 5 MMBT2369LT1 MMBT2369ALT1 INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT–23 SOT–23 POWER DISSIPATION The power dissipation of the SOT–23 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by T J(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SOT–23 package, PD can be calculated as follows: PD = TJ(max) – TA RθJA SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. PD = 150°C – 25°C 556°C/W = 225 milliwatts The 556°C/W for the SOT–23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT–23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad™. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. 6 Motorola Small–Signal Transistors, FETs and Diodes Device Data MMBT2369LT1 MMBT2369ALT1 PACKAGE DIMENSIONS A L 3 BS 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60 V G C D H K J DIM A B C D G H J K L S V CASE 318–08 SOT–23 (TO–236AB) ISSUE AE STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR Motorola Small–Signal Transistors, FETs and Diodes Device Data 7 MMBT2369LT1 MMBT2369ALT1 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 8 ◊ Motorola Small–Signal Transistors, FETs and Diodes Device Data MMBT2369LT1/D *MMBT2369LT1/D*