MMDFS2P102

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MMDFS2P102/D FETKY™ ™ Data Sheet MMDFS2P102 P–Channel Power MOSFET with Schottky Rectifier 20 Volts RDS(on) = 0.16 W VF = 0.39 Volts MOSFET and Schottky Rectifier The FETKY™ product family incorporates low RDS(on), true logic level MOSFETs packaged with industry leading, low forward drop, low leakage Schottky Barrier rectifiers to offer high efficiency components in a space saving configuration. Independent pinouts for TMOS and Schottky die allow the flexibility to use a single component for switching and rectification functions in a wide variety of applications such as Buck Converter, Buck–Boost, Synchronous Rectification, Low Voltage Motor Control, and Load Management in Battery Packs, Chargers, Cell Phones and other Portable Products. • • • • • • HDTMOS Power MOSFET with Low VF, Low IR Schottky Rectifier Lower Component Placement and Inventory Costs along with Board Space Savings Logic Level Gate Drive — Can be Driven by Logic ICs Mounting Information for SO–8 Package Provided IDSS Specified at Elevated Temperature Applications Information Provided A CASE 751–05, Style 18 (SO– 8) 1 2 3 4 8 7 6 5 C C D D ™ A S G MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (1) Rating Drain–to–Source Voltage Drain–to–Gate Voltage (RGS = 1.0 MW) Gate–to–Source Voltage — Continuous Drain Current (3) — Continuous @ TA = 25°C — Continuous @ TA = 100°C — Single Pulse (tp 10 ms) Symbol VDSS VDGR VGS ID ID IDM PD EAS Value 20 TOP VIEW Unit Vdc Vdc Vdc Adc Apk Watts mJ "20 3.3 2.1 20 2.0 324 20 v Total Power Dissipation @ TA = 25°C (2) Single Pulse Drain–to–Source Avalanche Energy — STARTING TJ = 25°C VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 20 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 W SCHOTTKY RECTIFIER MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Peak Repetitive Reverse Voltage DC Blocking Voltage Average Forward Current (3) (Rated VR) TA = 100°C Peak Repetitive Forward Current (3) (Rated VR, Square Wave, 20 kHz) TA = 105°C Non–Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) VRRM VR IO Ifrm Ifsm 20 1.0 2.0 20 Volts Amps Amps Amps DEVICE MARKING 2P102 Device MMDFS2P102R2 ORDERING INFORMATION Reel Size 13″ Tape Width 12 mm embossed tape Quantity 2500 units (1) Negative sign for P–channel device omitted for clarity. (2) Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤ 2.0%. (3) Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), 10 sec. max. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. HDTMOS and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. FETKY is a trademark of International Rectifier. © Motorola TMOS Motorola, Inc. 1997 Product Preview Data 1 MMDFS2P102 THERMAL CHARACTERISTICS — SCHOTTKY AND MOSFET Thermal Resistance — Junction–to–Ambient (1) — MOSFET Thermal Resistance — Junction–to–Ambient (2) — MOSFET Thermal Resistance — Junction–to–Ambient (3) — MOSFET Thermal Resistance — Junction–to–Ambient (1) — Schottky Thermal Resistance — Junction–to–Ambient (2) — Schottky Thermal Resistance — Junction–to–Ambient (3) — Schottky Operating and Storage Temperature Range RqJA RqJA RqJA RqJA RqJA RqJA Tj, Tstg 167 100 62.5 204 122 83 – 55 to 150 °C/W (1) Mounted with minimum recommended pad size, PC Board FR4. (2) Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), Steady State. (3) Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), 10 sec. max. 2 Motorola TMOS Product Preview Data MMDFS2P102 MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (1) Characteristic OFF CHARACTERISTICS Drain–Source Voltage (VGS = 0 Vdc, ID = 0.25 mA) Temperature Coefficient (Positive) Zero Gate Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C) Gate Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) ON CHARACTERISTICS (2) Gate Threshold Voltage (VDS = VGS, ID = 0.25 mA) Temperature Coefficient (Negative) Static Drain–Source Resistance (VGS = 10 Vdc, ID = 2.0 Adc) (VGS = 4.5 Vdc, ID = 2.5 Adc) Forward Transconductance (VDS = 3.0 Vdc, ID = 1.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (3) Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Gate Charge ( (VDS = 16 Vdc, ID = 2.0 Adc, Vd , 2 0 Ad , VGS = 10 Vdc) (VDS = 10 Vdc, ID = 2.0 Adc, Vd 2 0 Ad VGS = 4.5 Vdc, Vdc RG = 6.0 Ω) td(on) tr td(off) tf QT Q1 Q2 Q3 DRAIN SOURCE DIODE CHARACTERISTICS Forward On–Voltage (2) Reverse Recovery Time ( (IS = 2 0 Ad , VDD = 15 V, 2.0 Adc, V, dIS/dt = 100 A/µs) Reverse Recovery Stored Charge — — — — — — — — 19 66 25 37 15 1.2 5.0 4.0 38 132 50 74 20 — — — nC ns (VDS = 16 Vdc, VGS = 0 Vdc, Vdc Vdc f = 1.0 MHz) 1.0 MHz) Ciss Coss Crss — — — 420 290 116 588 406 232 pF VGS(th) 1.0 — RDS(on) — — gFS 2.0 0.118 0.152 3.0 0.160 0.180 — mhos 1.5 4.0 2.0 — Vdc mV/°C Ohms V(BR)DSS 20 — IDSS — — IGSS — — — — 1.0 10 100 nAdc — 25 — — Vdc mV/°C µAdc Symbol Min Typ Max Unit (IS = 2.0 Adc, VGS = 0 Vdc) VSD — trr ta tb QRR — — — — 1.5 38 17 21 0.034 2.1 — — — — V ns µC SCHOTTKY RECTIFIER ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Maximum Instantaneous Forward Voltage (2) IF = 1.0 A 10 IF = 2.0 A Maximum Instantaneous Reverse Current (2) VR = 20 V Maximum Voltage Rate of Change VR = 20 V dV/dt IR VF TJ = 25°C 0.47 0.58 TJ = 25°C 0.05 10,000 TJ = 125°C 0.39 0.53 TJ = 125°C 10 V/ms mA Volts (1) Negative sign for P–channel device omitted for clarity. (2) Pulse Test: Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2.0%. (3) Switching characteristics are independent of operating temperature. Motorola TMOS Product Preview Data 3 MMDFS2P102 TYPICAL FET ELECTRICAL CHARACTERISTICS 4.0 10 V ID, DRAIN CURRENT (AMPS) 4.5 V 3.8 V TJ = 25°C ID, DRAIN CURRENT (AMPS) 4.0 VDS ≥ 10 V 3.0 3.0 2.0 3.1 V 2.0 25°C 1.0 VGS = 2.4 V 0 1.0 100°C TJ = – 55°C 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1.0 1.5 2.0 2.5 3.0 3.5 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) Figure 1. On–Region Characteristics Figure 2. Transfer Characteristics R DS(on), DRAIN–TO–SOURCE RESISTANCE (OHMS) 0.6 0.5 0.4 0.3 0.2 0.1 0 0 2.0 4.0 6.0 8.0 10 VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) TJ = 25°C ID = 1.0 A R DS(on), DRAIN–TO–SOURCE RESISTANCE (OHMS) 0.20 TJ = 25°C 0.16 VGS = 4.5 V 0.12 10 V 0.08 0.04 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 ID, DRAIN CURRENT (AMPS) Figure 3. On–Resistance versus Gate–To–Source Voltage R DS(on), DRAIN–TO–SOURCE RESISTANCE (NORMALIZED) Figure 4. On–Resistance versus Drain Current and Gate Voltage 1.6 VGS = 10 V ID = 2.0 A IDSS , LEAKAGE (nA) 100 VGS = 0 V TJ = 125°C 1.4 1.2 10 100°C 1.0 0.8 0.6 –50 1.0 –25 0 25 50 75 100 125 150 0 5.0 10 15 20 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 5. On–Resistance Variation with Temperature Figure 6. Drain–To–Source Leakage Current versus Voltage 4 Motorola TMOS Product Preview Data MMDFS2P102 TYPICAL FET ELECTRICAL CHARACTERISTICS VDS = 0 1000 C, CAPACITANCE (pF) 800 600 Crss 400 200 0 –10 Ciss Coss Crss Ciss VGS = 0 TJ = 25°C VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) 1200 12 QT 10 14 8.0 6.0 4.0 2.0 Q3 0 0 4.0 8.0 VDS 12 QG, TOTAL GATE CHARGE (nC) Q1 Q2 VGS ID = 2.0 A TJ = 25°C 12 10 8.0 6.0 4.0 2.0 0 16 18 16 – 5.0 VGS 0 VDS 5.0 10 15 20 GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 8. Gate–To–Source and Drain–To–Source Voltage versus Total Charge Figure 7. Capacitance Variation 1000 2.0 VGS = 0 V TJ = 25°C IS, SOURCE CURRENT (AMPS) 10 1.6 t, TIME (ns) 1.2 100 td(off) tf tr 10 1.0 td(on) 100 0.8 0.4 0 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS) RG, GATE RESISTANCE (OHMS) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current 100 EAS , SINGLE PULSE DRAIN–TO–SOURCE AVALANCHE ENERGY (mJ) Mounted on 2″ sq. FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided) with one die operating, 10 s max. VGS = 20 V SINGLE PULSE TC = 25°C dc 350 300 250 200 150 100 50 0 ID = 6.0 A ID, DRAIN CURRENT (AMPS) 10 10 ms 1.0 ms 100 ms 10 ms 1.0 0.1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 1.0 10 100 0.01 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) 25 50 75 100 125 150 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature Motorola TMOS Product Preview Data 5 MMDFS2P102 TYPICAL FET ELECTRICAL CHARACTERISTICS 1.0 Rthja(t), EFFECTIVE TRANSIENT THERMAL RESPONSE D = 0.5 0.2 0.1 0.05 0.02 0.01 0.1 NORMALIZED TO RqJA AT STEADY STATE (1″ PAD) 0.0175 W 0.0710 W 0.2706 W 0.5776 W 0.7086 W 0.0154 F 0.0854 F 0.3074 F 1.7891 F 107.55 F AMBIENT 0.01 CHIP JUNCTION 0.001 SINGLE PULSE 0.0001 1.0E–05 1.0E–04 1.0E–03 1.0E–02 1.0E–01 t, TIME (s) 1.0E+00 1.0E+01 1.0E+02 1.0E+03 Figure 13. FET Thermal Response di/dt IS trr ta tb TIME tp IS 0.25 IS Figure 14. Diode Reverse Recovery Waveform TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 10 TJ = 125°C TJ = 125°C 1.0 85°C 25°C 1.0 85°C 25°C – 40°C 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 15. Typical Forward Voltage Figure 16. Maximum Forward Voltage 6 Motorola TMOS Product Preview Data MMDFS2P102 TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS 1E–2 IR, REVERSE CURRENT (AMPS) TJ = 125°C 1E–3 85°C 1E–4 IR, MAXIMUM REVERSE CURRENT (AMPS) 1E–1 TJ = 125°C 1E–2 1E–3 1E–5 25°C 1E–6 1E–7 0 5.0 10 15 20 VR, REVERSE VOLTAGE (VOLTS) 1E–4 25°C 1E–5 1E–6 0 5.0 10 15 20 VR, REVERSE VOLTAGE (VOLTS) Figure 17. Typical Reverse Current Figure 18. Maximum Reverse Current IO , AVERAGE FORWARD CURRENT (AMPS) 1000 TYPICAL CAPACITANCE AT 0 V = 170 pF 1.6 dc 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 TA, AMBIENT TEMPERATURE (°C) Ipk/Io = 10 Ipk/Io = 20 SQUARE WAVE Ipk/Io = p Ipk/Io = 5.0 FREQ = 20 kHz C, CAPACITANCE (pF) 100 10 0 5.0 10 15 20 VR, REVERSE VOLTAGE (VOLTS) Figure 19. Typical Capacitance Figure 20. Current Derating PFO , AVERAGE POWER DISSIPATION (WATTS) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.5 1.0 1.5 2.0 IO, AVERAGE FORWARD CURRENT (AMPS) Ipk/Io = p Ipk/Io = 5.0 Ipk/Io = 10 Ipk/Io = 20 SQUARE WAVE dc Figure 21. Forward Power Dissipation Motorola TMOS Product Preview Data 7 MMDFS2P102 TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS 1.0 D = 0.5 Rthja(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE AMBIENT 0.001 1.0E–05 1.0E–04 1.0E–03 1.0E–02 1.0E–01 t, TIME (s) 1.0E+00 1.0E+01 1.0E+02 1.0E+03 NORMALIZED TO RqJA AT STEADY STATE (1″ PAD) 0.0031 W CHIP JUNCTION 0.0014 F 0.0154 W 0.0082 F 0.1521 W 0.4575 W 0.3719 W 0.1052 F 2.7041 F 158.64 F Figure 22. Schottky Thermal Response 8 Motorola TMOS Product Preview Data MMDFS2P102 TYPICAL APPLICATIONS STEP DOWN SWITCHING REGULATORS LO + + Vin – CO Vout – LOAD Buck Regulator LO + + Vin – CO Vout – LOAD Synchronous Buck Regulator STEP UP SWITCHING REGULATORS L1 + + Vin Q1 – CO Vout – LOAD Boost Regulator + + Vin – CO Vout – LOAD Buck–Boost Regulator Motorola TMOS Product Preview Data 9 MMDFS2P102 TYPICAL APPLICATIONS MULTIPLE BATTERY CHARGERS Buck Regulator/Charger Q1 + Vin – D1 CO LO Q2 D2 BATT #1 Q3 D3 BATT #2 Li–lon BATTERY PACK APPLICATIONS Battery Pack PACK + Li–Ion BATTERY CELLS SMART IC DISCHARGE CHARGE Q1 Q2 PACK – SCHOTTKY SCHOTTKY • • • • Applicable in battery packs which require a high current level. During charge cycle Q2 is on and Q1 is off. Schottky can reduce power loss during fast charge. During discharge Q1 is on and Q2 is off. Again, Schottky can reduce power dissipation. Under normal operation, both transistors are on. 10 Motorola TMOS Product Preview Data MMDFS2P102 SO–8 FOOTPRINT 0.060 1.52 0.275 7.0 0.155 4.0 0.024 0.6 0.050 1.270 inches mm PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. DIM A B C D F G J K M P R MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.18 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.189 0.196 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.007 0.009 0.004 0.009 0_ 7_ 0.229 0.244 0.010 0.019 –A– 8 5 –B– 1 4 4X P 0.25 (0.010) M B M G R C –T– 8X SEATING PLANE X 45 _ F D 0.25 (0.010) M K TB M_ S J S A CASE 751–05 SO– 08 Motorola TMOS Product Preview Data 11 MMDFS2P102 Motorola reserves the right to make changes without further notice to any products herein. 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