MMUN2112LT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMUN2111LT1/D Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications. • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • The SOT-23 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of PIN 1 damage to the die. BASE • Available in 8 mm embossed tape and reel. Use the (INPUT) Device Number to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the Device Number to order the 13 inch/10,000 unit reel. MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Total Power Dissipation @ TA = 25°C(1) Derate above 25°C Symbol VCBO VCEO IC PD R1 R2 PIN 3 COLLECTOR (OUTPUT) MMUN2111LT1 SERIES Motorola Preferred Devices PNP SILICON BIAS RESISTOR TRANSISTOR 3 1 2 PIN 2 EMITTER (GROUND) CASE 318-08, STYLE 6 SOT-23 (TO-236AB) Value 50 50 100 *200 1.6 Unit Vdc Vdc mAdc mW mW/°C THERMAL CHARACTERISTICS Rating Thermal Resistance — Junction-to-Ambient (surface mounted) Operating and Storage Temperature Range Maximum Temperature for Soldering Purposes, Time in Solder Bath Symbol RθJA TJ, Tstg TL Value 625 – 65 to +150 260 10 Unit °C/W °C °C Sec DEVICE MARKING AND RESISTOR VALUES Device MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1(2) Marking A6A A6B A6C A6D A6E R1 (K) 10 22 47 10 10 R2 (K) 10 22 47 47 ∞ 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 2. New devices. Updated curves to follow in subsequent data sheets. Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended choices for future use and best overall value. (Replaces MMUN2111T1/D) Motorola Small–Signal © Motorola, Inc. 1996 Transistors, FETs and Diodes Device Data 1 MMUN2111LT1 SERIES DEVICE MARKING AND RESISTOR VALUES (Continued) Device MMUN2116LT1(2) MMUN2130LT1(2) MMUN2131LT1(2) MMUN2132LT1(2) MMUN2133LT1(2) MMUN2134LT1(2) Marking A6F A6G A6H A6J A6K A6L R1 (K) 4.7 1.0 2.2 4.7 4.7 22 R2 (K) ∞ 1.0 2.2 4.7 47 47 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 ICBO ICEO IEBO — — — — — — — — — — — — — 50 50 — — — — — — — — — — — — — — — 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 — — nAdc nAdc mAdc Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0) Collector-Emitter Breakdown Voltage(3) (IC = 2.0 mA, IB = 0) V(BR)CBO V(BR)CEO Vdc Vdc ON CHARACTERISTICS(3) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 — 60 100 140 140 250 250 5.0 15 27 140 130 — — — — — — — — — — — — 0.25 Vdc Collector-Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) (IC = 10 mA, IB = 5 mA) MMUN2130LT1/MMUN2131LT1 (IC = 10 mA, IB = 1 mA) MMUN2115LT1/MMUN2116LT1/ MMUN2132LT1/MMUN2133LT1/MMUN2134LT1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ) MMUN2111LT1 MMUN2112LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 MMUN2113LT1 VCE(sat) VOL — — — — — — — — — — — — — — — — — — — — — — 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 Vdc (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ) 2. New devices. Updated curves to follow in subsequent data sheets. 3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data MMUN2111LT1 SERIES ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ) MMUN2115LT1 MMUN2116LT1 MMUN2131LT1 MMUN2132LT1 (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kΩ) MMUN2130LT1 Input Resistor MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 Symbol VOH Min 4.9 Typ — Max — Unit Vdc R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 0.8 0.17 — 0.8 0.055 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 1.0 0.21 — 1.0 0.1 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 1.2 0.25 — 1.2 0.185 kΩ Resistor Ratio MMUN2111LT1/MMUN2112LT1/MMUN2113LT1 MMUN2114LT1 MMUN2115LT1/MMUN2116LT1 MMUN2130LT1/MMUN2131LT1/MMUN2132LT1 MMUN2133LT1 R1/R2 Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 MMUN2111LT1 SERIES TYPICAL ELECTRICAL CHARACTERISTICS MMUN2111LT1 250 PD , POWER DISSIPATION (MILLIWATTS) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = –25°C 75°C 0.1 25°C 200 150 100 RθJA = 625°C/W 50 0 –50 0 50 100 150 0.01 0 20 40 60 80 IC, COLLECTOR CURRENT (mA) TA, AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve Figure 2. VCE(sat) versus IC 4 VCE = 10 V 3 f = 1 MHz lE = 0 V TA = 25°C 1000 h FE, DC CURRENT GAIN (NORMALIZED) 100 TA = 75°C 25°C –25°C Cob , CAPACITANCE (pF) 100 2 1 10 1 10 IC, COLLECTOR CURRENT (mA) 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 Figure 3. DC Current Gain Figure 4. Output Capacitance 100 75°C 25°C TA = –25°C 100 VO = 0.2 V Vin, INPUT VOLTAGE (VOLTS) IC , COLLECTOR CURRENT (mA) 10 1 10 TA = –25°C 25°C 75°C 0.1 1 0.01 0.001 0 1 2 VO = 5 V 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 5. Output Current versus Input Voltage Figure 6. Input Voltage versus Output Current 4 Motorola Small–Signal Transistors, FETs and Diodes Device Data MMUN2111LT1 SERIES TYPICAL ELECTRICAL CHARACTERISTICS MMUN2112LT1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 TA = –25°C 25°C 1 75°C h FE , DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V TA = 75°C 100 25°C –25°C 0.1 0.01 10 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 4 IC , COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 100 75°C 25°C TA = –25°C Cob , CAPACITANCE (pF) 3 10 1 2 0.1 VO = 5 V 1 0.01 0 1 2 3 4 5 6 7 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 8 9 10 Vin, INPUT VOLTAGE (VOLTS) Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage 100 VO = 0.2 V Vin, INPUT VOLTAGE (VOLTS) TA = –25°C 10 75°C 25°C 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 11. Input Voltage versus Output Current Motorola Small–Signal Transistors, FETs and Diodes Device Data 5 MMUN2111LT1 SERIES TYPICAL ELECTRICAL CHARACTERISTICS MMUN2113LT1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = –25°C 75°C 0.1 1000 h FE , CURRENT GAIN (NORMALIZED) TA = 75°C 25°C –25°C 100 25°C 0.01 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 1 I C , COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 100 TA = 75°C 25°C –25°C 0.8 Cob , CAPACITANCE (pF) 10 1 0.6 0.4 0.1 0.2 0.01 VO = 5 V 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 0 1 2 3 4 5 6 7 8 9 10 Vin, INPUT VOLTAGE (VOLTS) Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage 100 VO = 2 V Vin , INPUT VOLTAGE (VOLTS) TA = –25°C 10 25°C 75°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 16. Input Voltage versus Output Current 6 Motorola Small–Signal Transistors, FETs and Diodes Device Data MMUN2111LT1 SERIES TYPICAL ELECTRICAL CHARACTERISTICS MMUN2114LT1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 hFE, DC CURRENT GAIN (NORMALIZED) IC/IB = 10 TA = –25°C 25°C 0.1 75°C 180 160 140 120 100 80 60 40 20 0 1 2 4 6 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 80 90 100 VCE = 10 V TA = 75°C 25°C –25°C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 Figure 17. VCE(sat) versus IC Figure 18. DC Current Gain 4.5 4 Cob , CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 50 f = 1 MHz lE = 0 V TA = 25°C 100 TA = 75°C IC, COLLECTOR CURRENT (mA) –25°C 25°C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) +12 V TA = –25°C 25°C 75°C Typical Application for PNP BRTs 1 LOAD 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 21. Input Voltage versus Output Current Figure 22. Inexpensive, Unregulated Current Source Motorola Small–Signal Transistors, FETs and Diodes Device Data 7 MMUN2111LT1 SERIES INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT–23 SOT-23 POWER DISSIPATION The power dissipation of the SOT-23 is a function of the pad size. This can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by T J(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient; and the operating temperature, TA . Using the values provided on the data sheet, PD can be calculated as follows: PD = TJ(max) – TA RθJA SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10°C. • The soldering temperature and time should not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient should be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 200 milliwatts. PD = 150°C – 25°C = 200 milliwatts 625°C/W The 625° C/W assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 200 milliwatts. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad™. Using a board material such as Thermal Clad, a power dissipation of 400 milliwatts can be achieved using the same footprint. 8 Motorola Small–Signal Transistors, FETs and Diodes Device Data MMUN2111LT1 SERIES SOLDER STENCIL GUIDELINES Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. A solder stencil is required to screen the optimum amount of solder paste onto the footprint. The stencil is made of brass or stainless steel with a typical thickness of 0.008 inches The stencil opening size for the surface mounted package should be the same as the pad size on the printed circuit board, i.e., a 1:1 registration. TYPICAL SOLDER HEATING PROFILE For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones, and a figure for belt speed. Taken together, these control settings make up a heating “profile” for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 23 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time. The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177 –189°C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. STEP 1 PREHEAT ZONE 1 “RAMP” 200°C STEP 2 STEP 3 VENT HEATING “SOAK” ZONES 2 & 5 “RAMP” DESIRED CURVE FOR HIGH MASS ASSEMBLIES 150°C STEP 5 STEP 6 STEP 7 STEP 4 HEATING VENT COOLING HEATING ZONES 3 & 6 ZONES 4 & 7 205° TO “SPIKE” “SOAK” 219°C 170°C PEAK AT SOLDER 160°C JOINT SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY) 150°C 100°C 100°C DESIRED CURVE FOR LOW MASS ASSEMBLIES 50°C 140°C TIME (3 TO 7 MINUTES TOTAL) TMAX Figure 23. Typical Solder Heating Profile Motorola Small–Signal Transistors, FETs and Diodes Device Data 9 MMUN2111LT1 SERIES PACKAGE DIMENSIONS A L 3 BS 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60 V G C D H K J DIM A B C D G H J K L S V CASE 318–08 ISSUE AE SOT–23 (TO–236AB) STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA/EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 10 ◊ Motorola Small–Signal Transistors, FETs and Diodes Device Data MMUN2111LT1/D *MMUN2111LT1/D*