MPS3646

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPS3646/D Switching Transistor NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER MPS3646 Motorola Preferred Device 1 2 3 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous — 10 ms Pulse Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCES VCBO VEBO IC PD PD TJ, Tstg Value 15 40 40 5.0 300 500 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Collector – Emitter Sustaining Voltage(1) (IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCE = 20 Vdc, VBE = 0) (VCE = 20 Vdc, VBE = 0, TA = 65°C) 1. Pulse Test: Pulse Width V(BR)CES VCEO(sus) V(BR)CBO V(BR)EBO ICES — — 0.5 3.0 40 15 40 5.0 — — — — Vdc Vdc Vdc Vdc mAdc v 300 ms; Duty Cycle v 2.0%. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 MPS3646 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS(1) DC Current Gain (IC = 30 mAdc, VCE = 0.4 Vdc) (IC = 100 mAdc, VCE = 0.5 Vdc) (IC = 300 mA, VCE = 1.0 Vdc) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) (IC = 300 mAdc, IB = 30 mAdc) (IC = 30 mA, IB = 3.0 mA, TA = 65°C) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) (IC = 300 mAdc, IB = 30 mA) hFE 30 25 15 — — — — 0.73 — — 120 — — 0.2 0.28 0.5 0.3 0.95 1.2 1.7 — Collector – Emitter Saturation Voltage VCE(sat) Vdc Base – Emitter Saturation Voltage VBE(sat) Vdc SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 30 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) fT Cobo Cibo 350 — — — 5.0 9.0 MHz pF pF SWITCHING CHARACTERISTICS Turn–On Time Delay Time Rise Time Turn–Off Time Fall Time (VCC = 10 Vdc, IC = 300 mAdc, IB1 = IB2 = 30 mAdc) (Figure 1) (VCC = 10 Vdc, IC = 300 mAdc, IB1 = 30 mAdc) (Figure 1) ton td tr toff tf ts — — — — — — 18 10 15 28 15 18 ns ns ns ns ns ns Storage Time (VCC = 10 Vdc, IC = 10 mAdc, IB1 = IB2 = 10 mAdc) (Figure 2) 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. Figure 1. Switching Time Equivalent Test Circuit Test Condition IC mA A B C 10 10 100 VCC V 3 10 10 RS Ω RC CS(max) VBE(off) Ω pF 4 4 12 V –1.5 — –2.0 V1 V — V2 V V3 V V1 0 VEB(off) < 2 ns ton t1 toff t1 VCC RC RB CS < 2 ns 330 270 0 560 960 560 96 10.55 –4.15 10.70 –4.65 6.55 6.35 –4.65 6.55 V3 0 V2 PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data MPS3646 CURRENT GAIN CHARACTERISTICS 100 70 h FE, DC CURRENT GAIN 50 TJ = 125°C 25°C –15°C – 55°C 20 MPS3646 VCE = 1 V 30 10 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 50 70 100 200 200 TJ = 125°C h FE, DC CURRENT GAIN 100 70 50 25°C –15°C – 55°C MPS3646 VCE = 1 V 30 20 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 50 70 100 200 Figure 2. Minimum Current Gain 270 Ω t1 +10 V ∆V 0 PULSE WIDTH (t1) = 5 µs 3V 8 pF CS < 4 pF