MPS6602

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPS6601/D Amplifier Transistors COLLECTOR 3 2 BASE NPN 1 EMITTER 2 BASE PNP 1 EMITTER COLLECTOR 3 NPN MPS6601 MPS6602* PNP MPS6651 MPS6652* Voltage and current are negative for PNP transistors *Motorola Preferred Device MAXIMUM RATINGS Rating Collector – Emitter Voltage MPS6601/6651 MPS6602/6652 Collector – Base Voltage MPS6601/6651 MPS6602/6652 Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range VEBO IC PD PD TJ, Tstg VCBO 25 30 4.0 1000 625 5.0 1.5 12 – 55 to +150 Vdc mAdc mW mW/°C Watts mW/°C °C Symbol VCEO 25 40 Vdc Value Unit Vdc 1 2 3 CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA(1) RqJC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 µAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector Cutoff Current (VCE = 25 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) Collector Cutoff Current (VCB = 25 Vdc, IE = 0) (VCB = 30 Vdc, IE = 0) MPS6601/6651 MPS6602/6652 ICBO MPS6601/6651 MPS6602/6652 — — 0.1 0.1 V(BR)CEO MPS6601/6651 MPS6602/6652 V(BR)CBO MPS6601/6651 MPS6602/6652 V(BR)EBO ICES — — 0.1 0.1 µAdc 25 40 4.0 — — — Vdc µAdc 25 40 — — Vdc Vdc 1. RqJA is measured with the device soldered into a typical printed circuit board. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 NPN MPS6601 MPS6602 PNP MPS6651 MPS6652 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) (IC = 1000 mAdc, VCE = 1.0 Vdc) Collector – Emitter Saturation Voltage (IC = 1000 mAdc, IB = 100 mAdc) Base–Emitter On Voltage (IC = 500 mAdc, VCE = 1.0 Vdc) hFE 50 50 30 VCE(sat) VBE(on) — — — — — 0.6 1.2 Vdc Vdc — SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 50 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) fT Cobo 100 — — 30 MHz pF SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = 40 Vdc, IC = 500 mAdc, IB1 = 50 mAdc, 300 ns Duty Cycle) tp td — — — — 25 30 250 50 ns ns ns ns w tr ts tf TURN–ON TIME –1.0 V VCC +40 V 5.0 ms +10 V 0 tr = 3.0 ns 5.0 mF 100 5.0 ms tr = 3.0 ns * Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities * CS Vin 100 RB RL OUTPUT Vin TURN–OFF TIME +VBB VCC +40 V 100 RB 5.0 mF 100 * CS RL OUTPUT t 6.0 pF t 6.0 pF Figure 1. Switching Time Test Circuits 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data NPN MPS6601 MPS6602 PNP MPS6651 MPS6652 NPN 300 200 h FE , CURRENT GAIN h FE , CURRENT GAIN 100 70 50 VCE = –1.0 V TJ = 25°C 200 PNP 100 70 50 VCE = 1.0 V TJ = 25°C 10 100 IC, COLLECTOR CURRENT (mA) 1000 30 20 –10 –100 IC, COLLECTOR CURRENT (mA) –1000 Figure 2. MPS6601/6602 DC Current Gain Figure 3. MPS6651/6652 DC Current Gain f T , CURRENT GAIN BANDWIDTH PRODUCT (MHz) 300 200 f T , CURRENT GAIN BANDWIDTH PRODUCT (MHz) 300 200 100 70 50 VCE = 10 V TJ = 25°C f = 30 MHz 10 100 200 1000 100 70 50 VCE = –10 V TJ = 25°C f = 30 MHz –100 –200 –1000 30 IC, COLLECTOR CURRENT (mA) 30 –10 IC, COLLECTOR CURRENT (mA) Figure 4. Current Gain Bandwidth Product Figure 5. Current Gain Bandwidth Product 1.0 TJ = 25°C –1.0 VBE(SAT) @ IC/IB = 10 –0.8 V, VOLTAGE (VOLTS) TJ = 25°C VBE(SAT) @ IC/IB = 10 0.8 V, VOLTAGE (VOLTS) 0.6 VBE(ON) @ VCE = 1.0 V –0.6 VBE(ON) @ VCE = –1.0 V 0.4 –0.4 0.2 0 1.0 VCE(SAT) @ IC/IB = 10 –0.2 VCE(SAT) @ IC/IB = 10 10 100 1000 0 –1.0 –10 –100 –1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 6. On Voltages Figure 7. On Voltages Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 NPN MPS6601 MPS6602 PNP MPS6651 MPS6652 NPN 80 TJ = 25°C 160 PNP TJ = 25°C C, CAPACITANCE (pF) C, CAPACITANCE (pF) 60 120 40 Cib 80 Cib 40 Cob Cob Cib –5.0 –1.0 –10 –15 –20 –2.0 –3.0 –4.0 VR, REVERSE VOLTAGE (VOLTS) –25 –5.0 20 Cob 5.0 1.0 10 15 20 2.0 3.0 4.0 VR, REVERSE VOLTAGE (VOLTS) 25 5.0 0 Cob Cib 0 Figure 8. Capacitance Figure 9. Capacitance 10 VCE = 5.0 V f = 1.0 kHz TA = 25°C IC = 100 mA 10 VCE = –5.0 V f = 1.0 kHz TA = 25°C NF, NOISE FIGURE (dB) 6.0 NF, NOISE FIGURE (dB) 8.0 8.0 6.0 IC = 100 mA 4.0 4.0 2.0 0 10 100 1k 10 k Rs, SOURCE RESISTANCE (OHMS) 2.0 0 10 100 1k 10 k Rs, SOURCE RESISTANCE (OHMS) Figure 10. MPS6601/6602 Noise Figure Figure 11. MPS6651/6652 Noise Figure 10 k 5k 3k 1k t, TIME (NS) 500 ts 200 100 50 20 10 10 20 50 100 200 tf tr td 500 1000 td @ VBE(off) = 0.5 V VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25°C 10 k 5k 3k 1k t, TIME (NS) 500 200 100 50 20 10 –10 –20 –50 –100 –200 tf tr td –500 –1000 ts td @ VBE(off) = –0.5 V VCC = –40 V IC/IB = 10 IB1 = IB2 TJ = 25°C IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 12. MPS6601/6602 Switching Times Figure 13. MPS6651/6652 Switching Times 4 Motorola Small–Signal Transistors, FETs and Diodes Device Data NPN MPS6601 MPS6602 PNP MPS6651 MPS6652 NPN R qVB , TEMPERATURE COEFFICIENT (mV/° C) R qVB , TEMPERATURE COEFFICIENT (mV/° C) –0.8 –0.8 PNP –1.2 –1.2 –1.6 RqVB for VBE –1.6 RqVB for VBE –2.0 –2.0 –2.4 –2.8 1.0 –2.4 –2.8 –1.0 10 100 1000 –10 –100 –1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 14. Base–Emitter Temperature Coefficient Figure 15. Base–Emitter Temperature Coefficient 1k I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) 500 TC = 25°C 1.0 MS –1 k –500 TC = 25°C 1.0 MS 200 100 50 1.0 s –200 –100 –50 1.0 s 20 10 1.0 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 2.0 5.0 10 20 40 MPS6601 MPS6602 MPS6651 MPS6652 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT –1.0 –2.0 –5.0 –10 –20 –40 –20 –10 VCE, COLLECTOR–EMITTER VOLTAGE VCE, COLLECTOR–EMITTER VOLTAGE Figure 16. Safe Operating Area Figure 17. Safe Operating Area 1.0 VCE , COLLECTOR VOLTAGE (VOLTS) VCE , COLLECTOR VOLTAGE (VOLTS) TJ = 25°C 0.8 –1.0 TJ = 25°C –0.8 0.6 IC = 1000 mA 0.4 IC = 50 mA IC = 100 mA IC = 500 mA IC = 250 mA 1.0 IB, BASE CURRENT (mA) 10 100 –0.6 IC = –1000 mA –0.4 IC = –50 mA IC = –100 mA IC = –500 mA IC = –250 mA –1.0 IB, BASE CURRENT (mA) –10 –100 0.2 IC = 10 mA 0 0.01 0.1 –0.2 IC = –10 mA 0 –0.01 –0.1 Figure 18. MPS6601/6602 Saturation Region Figure 19. MPS6651/6652 Saturation Region Motorola Small–Signal Transistors, FETs and Diodes Device Data 5 NPN MPS6601 MPS6602 PNP MPS6651 MPS6652 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1.0 0.7 0.5 0.3 0.2 D = 0.5 0.2 0.1 P(pk) SINGLE PULSE 0.01 SINGLE PULSE t1 t2 DUTY CYCLE, D = t1/t2 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 RθJC(t) = (t) θJC RθJC = 100°C/W MAX RθJA(t)d = r(t) θJA RθJA = 357°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) θJC(t) 10 20 50 100 0.1 0.05 0.07 0.02 0.05 0.03 0.02 0.01 0.001 t, TIME (SECONDS) Figure 20. Thermal Response 6 Motorola Small–Signal Transistors, FETs and Diodes Device Data NPN MPS6601 MPS6602 PNP MPS6651 MPS6652 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– A R P SEATING PLANE B F L K D XX G H V 1 J C N N SECTION X–X DIM A B C D F G H J K L N P R V CASE 029–04 (TO–226AA) ISSUE AD STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR Motorola Small–Signal Transistors, FETs and Diodes Device Data 7 NPN MPS6601 MPS6602 PNP MPS6651 MPS6652 Motorola reserves the right to make changes without further notice to any products herein. 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