MPS8598

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPS8098/D Amplifier Transistors COLLECTOR 3 2 BASE NPN 1 EMITTER 2 BASE PNP 1 EMITTER COLLECTOR 3 NPN MPS8098 MPS8099* PNP MPS8598 MPS8599* Voltage and current are negative for PNP transistors *Motorola Preferred Device MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Symbol VCEO VCBO MPS8098 MPS8598 60 60 MPS8099 Emitter – Base Voltage Collector Current – Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range VEBO IC PD PD TJ, Tstg 6.0 500 625 5.0 1.5 12 – 55 to +150 MPS8099 MPS8599 80 80 MPS8598 MPS8599 5.0 Vdc mAdc mW mW/°C 1 Unit Vdc Vdc Watts mW/°C °C 2 3 CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 µAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) (VEB = 4.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width MPS8098, MPS8598 MPS8099, MPS8599 IEBO MPS8098, MPS8099 MPS8598, MPS8599 — — 0.1 0.1 V(BR)CEO MPS8098, MPS8598 MPS8099, MPS8599 V(BR)CBO MPS8098, MPS8598 MPS8099, MPS8599 V(BR)EBO MPS8098, MPS8099 MPS8598, MPS8599 ICES ICBO — — 0.1 0.1 µAdc 6.0 5.0 — — — 0.1 µAdc µAdc 60 80 — — Vdc 60 80 — — Vdc Vdc v 300 ms, Duty Cycle = 2.0%. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 NPN MPS8098 MPS8099 PNP MPS8598 MPS8599 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS(1) DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) Collector – Emitter Saturation Voltage (IC = 100 mAdc, IB = 5.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) Base–Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) MPS8098, MPS8598 MPS8099, MPS8599 hFE 100 100 75 VCE(sat) — — VBE(on) 0.5 0.6 0.7 0.8 0.4 0.3 Vdc 300 — — Vdc — SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width MPS8098, MPS8099 MPS8598, MPS8599 Cibo MPS8098, MPS8099 MPS8598, MPS8599 — — 25 30 fT Cobo — — 6.0 8.0 pF 150 — MHz pF v 300 ms, Duty Cycle = 2.0%. TURN–ON TIME –1.0 V VCC +40 V 5.0 ms +10 V Vin 0 tr = 3.0 ns 5.0 mF 100 5.0 ms tr = 3.0 ns * Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities * CS RB 100 RL OUTPUT Vin TURN–OFF TIME +VBB VCC +40 V RL OUTPUT RB 5.0 mF 100 * CS 100 t 6.0 pF t 6.0 pF Figure 1. Switching Time Test Circuits 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data NPN MPS8098 MPS8099 PNP MPS8598 MPS8599 NPN f T , CURRENT–GAIN – BANDWIDTH PRODUCT (MHz) 300 TJ = 25°C 200 5.0 V VCE = 1.0 V 100 70 50 f T , CURRENT–GAIN – BANDWIDTH PRODUCT (MHz) 300 TJ = 25°C 200 –5.0 V VCE = –1.0 V 100 70 50 PNP 30 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 30 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 IC, COLLECTOR CURRENT (mA) Figure 2. MPS8098/99 Current–Gain — Bandwidth Product Figure 3. MPS8598/99 Current–Gain — Bandwidth Product 40 TJ = 25°C 20 C, CAPACITANCE (pF) C, CAPACITANCE (pF) Cibo 10 8.0 6.0 4.0 Cobo 2.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 40 TTJ==25°°C J 25 C 20 Cibo 10 8.0 6.0 Cobo 4.0 2.0 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 4. MPS8098/99 Capacitance Figure 5. MPS8598/99 Capacitance 1.0 k 700 500 300 t, TIME (ns) 200 100 70 50 30 20 VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25°C ts 1.0 k 700 500 300 t, TIME (ns) 200 100 70 50 30 ts VCC = –40 V IC/IB = 10 IB1 = IB2 TJ = 25°C tf tf tr td @ VBE(off) = 0.5 V 10 10 20 30 50 70 100 tr 200 20 10 td @ VBE(off) = –0.5 V –10 –20 –30 –50 –70 –100 –200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 6. MPS8098/99 Switching Times Figure 7. MPS8598/99 Switching Times Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 NPN MPS8098 MPS8099 PNP MPS8598 MPS8599 NPN 1.0 k 700 500 300 200 100 70 50 30 20 DUTY CYCLE ≤ 10% 10 1.0 2.0 3.0 5.0 7.0 10 –1.0 k –700 –500 –300 –200 –100 –70 –50 –30 –20 –10 50 70 100 –1.0 PNP I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MPS8098 MPS8099 20 30 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MPS8598 DUTY CYCLE ≤ 10% MPS8599 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 8. MPS8098/99 Active–Region Safe Operating Area 400 TJ = 125°C h FE , DC CURRENT GAIN 200 300 Figure 9. MPS8598/99 Active–Region Safe Operating Area TJ = 125°C 200 –55°C h FE, DC CURRENT GAIN 25°C 25°C 100 70 50 –55°C VCE = –5.0 V 100 80 60 40 0.2 0.3 0.5 VCE = 5.0 V 1.0 2.0 3.0 5.0 10 20 30 50 100 200 30 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 10. MPS8098/99 DC Current Gain Figure 11. MPS8598/99 DC Current Gain 1.0 TJ = 25°C VBE(sat) @ IC/IB = 10 VBE @ VCE = 5.0 V 1.0 TJ = 25°C VBE(sat) @ IC/IB = 10 VBE @ VCE = 5.0 V 0.8 V, VOLTAGE (VOLTS) 0.8 V, VOLTAGE (VOLTS) 0.6 0.6 0.4 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 0.2 VCE(sat) @ IC/IB = 10 0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 12. MPS8098/99 “ON” Voltages Figure 13. MPS8598/99 “ON” Voltages 4 Motorola Small–Signal Transistors, FETs and Diodes Device Data NPN MPS8098 MPS8099 PNP MPS8598 MPS8599 NPN VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) 2.0 IC = 20 mA IC = 50 mA IC = 100 mA TJ = 25°C IC = 200 mA 2.0 IC = 10 mA IC = 20 mA IC = 50 mA IC = 100 mA IC = 200 mA PNP 1.6 1.6 1.2 1.2 0.8 0.8 0.4 IC = 10 mA 0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0.4 TJ = 25°C 0 0.05 0.1 0.02 0.2 0.5 1.0 2.0 5.0 10 20 IB, BASE CURRENT (mA) IB, BASE CURRENT (mA) Figure 14. MPS8098/99 Collector Saturation Region Figure 15. MPS8598/99 Collector Saturation Region R qVB , TEMPERATURE COEFFICIENT (mV/° C) –1.4 R qVB , TEMPERATURE COEFFICIENT (mV/° C) –1.0 –1.0 –1.4 –1.8 RqVB FOR VBE –2.2 –55°C TO 125°C –1.8 RqVB FOR VBE –55°C TO 125°C –2.2 –2.6 –3.0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) –2.6 –3.0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) Figure 16. MPS8098/99 Base–Emitter Temperature Coefficient 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 1.0 2.0 5.0 10 20 50 100 200 t, TIME (ms) 500 Figure 17. MPS8598/99 Base–Emitter Temperature Coefficient D = 0.5 0.2 0.1 0.05 SINGLE PULSE 0.02 0.01 P(pk) t1 SINGLE PULSE t2 DUTY CYCLE, D = t1/t2 1.0 k 2.0 k 5.0 k ZθJC(t) = r(t) • RθJC TJ(pk) – TC = P(pk) ZθJC(t) ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t) D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN469) 10 k 20 k 50 k 100 k r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE Figure 18. MPS8098, MPS8099, MPS8598 and MPS8599 Thermal Response Motorola Small–Signal Transistors, FETs and Diodes Device Data 5 NPN MPS8098 MPS8099 PNP MPS8598 MPS8599 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– A R P SEATING PLANE B F L K D XX G H V 1 J C N N SECTION X–X DIM A B C D F G H J K L N P R V CASE 029–04 (TO–226AA) ISSUE AD STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. 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