MPSA13

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPSA13/D Darlington Transistors NPN Silicon COLLECTOR 3 MPSA13 MPSA14 * *Motorola Preferred Device BASE 2 EMITTER 1 1 2 3 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCES VCBO VEBO IC PD PD TJ, Tstg Value 30 30 10 500 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 100 µAdc, IB = 0) Collector Cutoff Current (VCB= 30 Vdc, IE = 0) Emitter Cutoff Current (VEB= 10 Vdc, IC = 0) V(BR)CES ICBO IEBO 30 — — — 100 100 Vdc nAdc nAdc Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 MPSA13 MPSA14 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS(1) DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) hFE MPSA13 MPSA14 MPSA13 MPSA14 VCE(sat) VBE(on) 5,000 10,000 10,000 20,000 — — — — — — 1.5 2.0 Vdc Vdc — (IC = 100 mAdc, VCE = 5.0 Vdc) Collector – Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) Base – Emitter On Voltage (IC = 100 mAdc, VCE = 5.0 Vdc) SMALL– SIGNAL CHARACTERISTICS Current–Gain – Bandwidth Product(2) (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width 2. fT = |hfe| S ftest. fT 125 — MHz v 300 ms; Duty Cycle v 2.0%. RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data MPSA13 MPSA14 NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25°C) 500 200 en, NOISE VOLTAGE (nV) 100 10 µA 50 100 µA 20 IC = 1.0 mA 10 5.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k BANDWIDTH = 1.0 Hz RS ≈ 0 i n, NOISE CURRENT (pA) 2.0 BANDWIDTH = 1.0 Hz 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k 100 µA 10 µA IC = 1.0 mA Figure 2. Noise Voltage Figure 3. Noise Current VT, TOTAL WIDEBAND NOISE VOLTAGE (nV) 200 14 BANDWIDTH = 10 Hz TO 15.7 kHz 12 NF, NOISE FIGURE (dB) 100 70 50 30 20 BANDWIDTH = 10 Hz TO 15.7 kHz IC = 10 µA 10 10 µA 8.0 6.0 4.0 2.0 0 1.0 IC = 1.0 mA 100 µA 100 µA 1.0 mA 10 1.0 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (kΩ) 500 100 0 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (kΩ) 500 100 0 Figure 4. Total Wideband Noise Voltage Figure 5. Wideband Noise Figure Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 MPSA13 MPSA14 SMALL–SIGNAL CHARACTERISTICS 20 TJ = 25°C C, CAPACITANCE (pF) 10 7.0 5.0 Cibo Cobo |h fe |, SMALL–SIGNAL CURRENT GAIN 4.0 VCE = 5.0 V f = 100 MHz TJ = 25°C 2.0 1.0 0.8 0.6 0.4 3.0 2.0 0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 40 0.2 0.5 1.0 2.0 0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 Figure 6. Capacitance Figure 7. High Frequency Current Gain 200 k 100 k 70 k 50 k 30 k 20 k 10 k 7.0 k 5.0 k 3.0 k VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) TJ = 125°C 3.0 TJ = 25°C 2.5 IC = 10 mA 2.0 50 mA 250 mA 500 mA hFE, DC CURRENT GAIN 25°C 1.5 – 55°C VCE = 5.0 V 1.0 2.0 k 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 0.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (µA) 500 1000 Figure 8. DC Current Gain Figure 9. Collector Saturation Region RθV, TEMPERATURE COEFFICIENTS (mV/°C) 1.6 TJ = 25°C 1.4 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0 – 1.0 *APPLIES FOR IC/IB ≤ hFE/3.0 *RqVC FOR VCE(sat) 25°C TO 125°C – 2.0 – 55°C TO 25°C – 3.0 25°C TO 125°C – 4.0 qVB FOR VBE – 5.0 – 55°C TO 25°C 0.8 VCE(sat) @ IC/IB = 1000 0.6 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 – 6.0 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 Figure 10. “On” Voltages Figure 11. Temperature Coefficients 4 Motorola Small–Signal Transistors, FETs and Diodes Device Data MPSA13 MPSA14 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.05 SINGLE PULSE D = 0.5 0.2 SINGLE PULSE ZθJC(t) = r(t) • RθJC TJ(pk) – TC = P(pk) ZθJC(t) ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t) 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0 k 2.0 k 5.0 k 10 k Figure 12. Thermal Response IC, COLLECTOR CURRENT (mA) 1.0 k 700 500 300 200 100 70 50 30 20 10 0.4 0.6 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT TA = 25°C TC = 25°C 1.0 ms 100 µs FIGURE A tP PP PP 1.0 s t1 1/f DUTY CYCLE 1.0 2.0 4.0 6.0 10 20 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 40 1 + t1 f + ttP PEAK PULSE POWER = PP Figure 13. Active Region Safe Operating Area Design Note: Use of Transient Thermal Resistance Data Motorola Small–Signal Transistors, FETs and Diodes Device Data 5 MPSA13 MPSA14 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– A R P SEATING PLANE B F L K D XX G H V 1 J C N N SECTION X–X DIM A B C D F G H J K L N P R V CASE 029–04 (TO–226AA) ISSUE AD STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. 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