MRF18085AR3

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18085A/D Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications. Specified for GSM–GSM EDGE 1805 – 1880 MHz. • GSM and GSM EDGE Performance, Full Frequency Band (1805–1880 MHz) Power Gain – 15 dB (Typ) @ 85 Watts CW Efficiency – 52% (Typ) @ 85 Watts CW • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 5:1 VSWR, @ 26 Vdc, @ P1dB Output Power, @ f = 1805 MHz • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters • Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal. MRF18085A RF Power Field Effect Transistors MRF18085AR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18085ALSR3 The RF MOSFET Line GSM/GSM EDGE 1.8 – 1.88 GHz, 85 W, 26 V LATERAL N–CHANNEL RF POWER MOSFETs CASE 465–06, STYLE 1 NI–780 MRF18085A, MRF18085AR3 CASE 465A–06, STYLE 1 NI–780S MRF18085ALSR3 MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 –0.5, +15 273 1.56 –65 to +200 200 Unit Vdc Vdc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.64 Unit °C/W ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 1 (Typical) M3 (Typical) NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 0 MOTOROLA RF  Motorola, Inc. 2002 DEVICE DATA MRF18085A MRF18085AR3 MRF18085ALSR3 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 µAdc) Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate–Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 µAdc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 600 mAdc) Drain–Source On–Voltage (VGS = 10 Vdc, ID = 2 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) Common–Source Amplifier Power Gain @ 85 W (2) (VDD = 26 Vdc, IDQ = 800 mA, f = 1805 – 1880 MHz) Drain Efficiency @ 85 W (2) (VDD = 26 Vdc, IDQ = 800 mA, f = 1805 – 1880 MHz) Input Return Loss @ 85 W (2) (VDD = 26 Vdc, IDQ = 800 mA, f = 1805 – 1880 MHz) Pout, 1 dB Compression Point (VDD = 26 Vdc, IDQ = 800 mA, f = 1805 – 1880 MHz) Output Mismatch Stress @ P1dB (VDD = 26 Vdc, IDQ = 800 mA, f = 1805 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests) Gps η IRL P1dB Ψ 13.5 48 — 83 15 52 –12 90 — — –9 — dB % dB Watts Crss — 3.6 — pF VGS(th) VGS(Q) VDS(on) gfs 2 2.5 — — — 3.9 0.15 6.0 4 4.5 — — Vdc Vdc Vdc S V(BR)DSS IDSS IGSS 65 — — — — — — 10 1 Vdc µAdc µAdc Symbol Min Typ Max Unit No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. (2) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1800 band, ensuring batch–to–batch consistency. MRF18085A MRF18085AR3 MRF18085ALSR3 2 MOTOROLA RF DEVICE DATA VGG C7 + C4 R1 R2 C5 C6 R3 Z1 Z3 C2 Z2 C1 Z4 Z5 Z6 DUT Z7 Z8 Z9 Z10 C8 + VDD C9 RF INPUT Z11 C10 C3 Z12 RF OUTPUT C1, C3, C6, C7 C2 C4 C5, C8 C9 C10 R1, R2 R3 Z1 Z2 Z3 10 pF Chip Capacitors, B Case, ATC 1.8 pF Chip Capacitor, B Case, ATC 10 mF, 35 V Tantalum Capacitor, AVX 1 nF Chip Capacitors, B Case, ATC 220 mF, 63 V Electrolytic Capacitor, Radial, Philips 0.3 pF Chip Capacitor, B Case, ATC 10 kW, 1/4 W Chip Resistors (1206) 1.0 kW, 1/4 W Chip Resistor (1206) 0.671″ x 0.087″ Microstrip 0.568″ x 0.087″ Microstrip 0.500″ x 0.098″ Microstrip Shorted Stub Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 PCB Connectors 0.610″ x 00.118″ Microstrip 0.331″ x 1.153″ Microstrip 0.063″ x 1.153″ Microstrip 0.122″ x 0.925″ Microstrip 0.547″ x 0.925″ Microstrip 0.394″ x 0.177″ Microstrip 0.180″ x 0.087″ Microstrip 0.686″ x 0.087″ Microstrip 0.294″ x 0.087″ Microstrip Taconic TLX8, 0.8 mm Thickness “N” Type, Macom 3052–1648–10 Figure 1. 1.80 – 1.88 GHz Test Fixture Schematic C9 C4 R1 C5 C6 R2 C2 C1 Strap R3 CUT OUT AREA C7 C8 C3 C10 MRF18085A C–PP–02–01–2–Rev0 Figure 2. 1.80 – 1.88 GHz Test Fixture Component Layout MOTOROLA RF DEVICE DATA MRF18085A MRF18085AR3 MRF18085ALSR3 3 TYPICAL CHARACTERISTICS 17 16 G ps , POWER GAIN (dB) 15 14 13 12 11 10 0 1 10 100 1000 IDQ = 1000 mA 800 mA 600 mA 400 mA VDD = 26 Vdc f = 1840 MHz TC = 25_C G ps , POWER GAIN (dB) 17 16 15 14 13 12 11 10 9 8 0.1 IDQ = 800 mA f = 1840 MHz TC = 25_C 1 10 Pout, OUTPUT POWER (WATTS) 32 V 28 V 24 V VDD = 20 V 100 1000 Pout, OUTPUT POWER (WATTS) Figure 3. Power Gain versus Output Power Figure 4. Power Gain versus Output Power 17 16 G ps , POWER GAIN (dB) 15 14 13 12 11 10 9 1 10 100 50_C TC = 25_C 85_C Pout , OUTPUT POWER (WATTS) VDD = 26 Vdc IDQ = 800 mA f = 1840 MHz 120 100 80 60 40 20 0 1800 VDD = 26 Vdc IDQ = 800 mA TC = 25_C Pin = 8 W 4W 1W 0.5 W 1000 1820 1840 1860 1880 1900 Pout, OUTPUT POWER (WATTS) f, FREQUENCY (MHz) Figure 5. Power Gain versus Output Power Figure 6. Output Power versus Frequency 17 16 G ps , POWER GAIN (dB) 15 14 13 12 11 10 1750 1800 1850 f, FREQUENCY (MHz) IRL @ 30 W IRL @ 80 W Gps @ 30 W Gps @ 80 W 0 -4 -8 -12 -16 -20 VDD = 26 Vdc IDQ = 800 mA TC = 25_C 1900 -24 16 IRL, INPUT RETURN LOSS (dB) G ps , POWER GAIN (dB) 15 14 13 12 11 VDD = 26 Vdc IDQ = 800 mA f = 1840 MHz TC = 25_C Gps 60 50 40 30 20 η, DRAIN EFFICIENCY (%) η 0.1 1 10 100 10 0 1000 -28 1950 10 Pout, OUTPUT POWER (WATTS) Figure 7. Power Gain versus Frequency Figure 8. Power Gain and Efficiency versus Output Power MRF18085A MRF18085AR3 MRF18085ALSR3 4 MOTOROLA RF DEVICE DATA Zo = 10 Ω Zsource f = 1710 MHz f = 1710 MHz f = 1990 MHz Zload f = 1990 MHz VDD = 26 V, IDQ = 800 mA, Pout = 85 W CW f MHz 1710 1785 1805 1880 1930 1960 1990 Zsource Ω 1.13 + j3.62 1.61 + j4.23 1.69 + j4.34 2.83 + j5.25 3.00 + j5.18 4.39 + j4.97 6.59 + j4.74 Zload Ω 1.79 + j2.88 1.82 + j3.15 1.90 + j2.66 2.09 + j2.77 2.01 + j2.44 2.01 + j2.57 1.79 + j2.37 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Input Matching Network Device Under Test Z source Z load Figure 9. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA MRF18085A MRF18085AR3 MRF18085ALSR3 5 NOTES MRF18085A MRF18085AR3 MRF18085ALSR3 6 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS B G 1 2X Q bbb M TA M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF 3 B (FLANGE) 2 K D bbb M TA M B M M (INSULATOR) R M (LID) bbb N H C (LID) M TA TA B B M ccc aaa M TA TA M B B M S M M M M M (INSULATOR) M ccc F E A A (FLANGE) T SEATING PLANE CASE 465–06 ISSUE F NI–780 MRF18085A, MRF18085AR3 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE 4X U (FLANGE) B 1 4X Z (LID) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 --0.040 --0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --1.02 --0.76 0.127 REF 0.254 REF 0.381 REF B (FLANGE) 2 2X K D bbb M TA M B M N (LID) R M (LID) ccc M H 3 TA M B M ccc aaa M TA TA M B B M (INSULATOR) S M (INSULATOR) M bbb C M TA B M M M F E A A (FLANGE) T SEATING PLANE CASE 465A–06 ISSUE F NI–780S MRF18085ALSR3 STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MOTOROLA RF DEVICE DATA MRF18085A MRF18085AR3 MRF18085ALSR3 7 Motorola reserves the right to make changes without further notice to any products herein. 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Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Motorola and the Stylized M Logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T. Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors MRF18085A MRF18085AR3 MRF18085ALSR3 ◊ 8 MOTOROLA RF DEVICE DATA MRF18085A/D