MRF18085BR3

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF18085B/D The RF MOSFET Line RF Power Field Effect Transistors Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. • GSM and GSM EDGE Performance, Full Frequency Band (1930 - 1990 MHz) Power Gain - 12.5 dB (Typ) @ 85 Watts CW Efficiency - 50% (Typ) @ 85 Watts CW • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency, and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 5:1 VSWR, @ 26 Vdc, @ P1dB Output Power, @ f = 1930 MHz • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal. • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. N - Channel Enhancement - Mode Lateral MOSFETs MRF18085BR3 MRF18085BLSR3 GSM/GSM EDGE 1.9 - 1.99 GHz, 85 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETs Freescale Semiconductor, Inc... CASE 465 - 06, STYLE 1 NI - 780 MRF18085BR3 MAXIMUM RATINGS Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ CASE 465A - 06, STYLE 1 NI - 780S MRF18085BLSR3 Value 65 - 0.5, +15 273 1.56 - 65 to +150 200 Unit Vdc Vdc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value (1) 0.79 Unit °C/W ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 1 (Minimum) M3 (Minimum) (1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf . Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 3 MOTOROLA RF  Motorola, Inc. 2004 DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF18085BR3 MRF18085BLSR3 1 Freescale Semiconductor, Inc. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain - Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 µAdc) Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 µAdc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 600 mAdc) VGS(th) VGS(Q) VDS(on) gfs 2 2.5 — — — 3.9 0.18 6.0 4 4.5 0.21 — Vdc Vdc Vdc S V(BR)DSS IDSS IGSS 65 — — — — — — 10 1 Vdc µAdc µAdc Symbol Min Typ Max Unit Freescale Semiconductor, Inc... Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) Common - Source Amplifier Power Gain @ 85 W (VDD = 26 Vdc, IDQ = 800 mA, f = 1930 - 1990 MHz) Drain Efficiency @ 85 W (VDD = 26 Vdc, IDQ = 800 mA, f = 1930 - 1990 MHz) Input Return Loss @ 85 W (VDD = 26 Vdc, IDQ = 800 mA, f = 1930 - 1990 MHz) P1 dB Output Power (VDD = 26 Vdc, IDQ = 800 mA, f = 1930 - 1990 MHz) Output Mismatch Stress @ P1dB (VDD = 26 Vdc, IDQ = 600 mA, f = 1930 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests) (1) Part is internally matched both on input and output. Crss — 3.6 — pF Gps η IRL P1dB Ψ 11.5 46 — 80 12.5 50 - 12 90 — — -9 — dB % dB Watts No Degradation In Output Power Before and After Test MRF18085BR3 MRF18085BLSR3 2 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. VSUPPLY VBIAS + C2 R1 R2 C8 C1 R3 RF INPUT Z1 C4 C9 C5 Z2 Z3 DUT Z4 Z5 Z6 C6 Z7 RF OUTPUT C3 C10 C7 + C11 Freescale Semiconductor, Inc... C1, C10 C2 C3, C6 C4 C5 C7, C8 C9 C11 R1, R2 R3 1.0 nF Chip Capacitors, B Case, ATC 10 mF, 35 V Tantalum Capacitor 10 pF Chip Capacitors, B Case, ATC 3.3 pF Chip Capacitor, B Case, ATC 4.7 pF Chip Capacitor, B Case, ATC 100 nF Chip Capacitors, ACCU - P (1206) 3.9 pF Chip Capacitor, B Case, ATC 470 mF, 63 V Electrolytic Capacitor 1.0 kW Chip Resistors (0805) 2 x 18 kW Chip Resistor (1206) Z1 Z2 Z3 Z4 Z5 Z6 Z7 PCB 1.654″ 0.207″ 0.362″ 0.583″ 0.449″ 0.877″ 0.326″ 0.030″ x 0.082″ Microstrip x 0.082″ Microstrip x 1.260″ Microstrip x 0.669″ Microstrip x 0.179″ Microstrip x 0.082″ Microstrip x 0.082″ Microstrip Glass Teflon (er = 2.55) Figure 1. 1.93 - 1.99 GHz Test Fixture Schematic C2 VBIAS R1 R2 C8 C1 R3 C11 C3 C10 C7 VSUPPLY A1 C6 C4 C9 C5 A2 MRF18085B Rev 0 Ground Ground Figure 2. 1.93 - 1.99 GHz Test Fixture Component Layout MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF18085BR3 MRF18085BLSR3 3 Freescale Semiconductor, Inc. VBIAS + C13 C1 C12 R1 R2 C2 R5 + C10 C11 T2 R4 C14 R7 C5 R6 C3 C4 B1 VSUPPLY R3 Freescale Semiconductor, Inc... B1 C1, C2 C3, C4 C5 C7 C8 C9 C10 C11, C12 C13 C14 MRF18085BR3 MRF18085BLSR3 4 ÎÎÎ ÎÎÎ ÎÎÎ T1 RF INPUT Z1 Z2 C7 C9 Z3 Z6 Z4 Z5 Z7 Z8 C8 Z9 RF OUTPUT Short RF Ferrite Bead, #27 430119447 1 mF Chip Capacitors, ACCU - P (0805) 1 nF Chip Capacitors, ACCU - P (0805) 10 pF Chip Capacitor, ACCU - P (0805) 1.5 pF Chip Capacitor, ACCU - P (0805) 8.2 pF Chip Capacitor, ACCU - P (0805) 1.0 pF Chip Capacitor, ACCU - P (0805) 100 mF, 63 V Electrolytic Capacitor 10 nF Chip Capacitors (0805) 10 mF, 35 V Tantalum Capacitor 8.2 pF Chip Capacitor, ACCU - P (0805) R1 R2 R3 R4 R5 R6, R7 T1 T2 Z1 - Z9 Substrate 10 Ω Chip Resistor (0805) 1 kΩ Chip Resistor (0805) 1.2 kΩ Chip Resistor (0805) 2.2 kΩ Chip Resistor (0805) 5 kΩ Chip Resistor (0805) 9 Ω Chip Resistors (1206) (18 Ω x 18 Ω) Voltage Regulator, Micro - 8, Motorola #LP2951 NPN Bipolar Transistor, SOT - 23, Motorola #BC847 Printed Transmission Lines 0.5 mm Rogers 4350 (er = 3.53) Figure 3. 1.93 - 1.99 GHz GSM EDGE Optimized Demo Board Schematic VBIAS Ground VSUPPLY R1 C1 R2 R3 R4 C2 T2 R5 T1 C3 D C13 C14 C10 + C12 B1 C5 C4 C11 R6 C7 C9 C8 MRF18085 Figure 4. 1.93 - 1.99 GHz GSM EDGE Optimized Demo Board Component Layout For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS (Performed on a GSM EDGE Optimized Demo Board) 14 IDQ = 1000 mA 13 800 mA 600 mA 12 EVM, ERROR VECTOR MAGNITUDE (%) 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 1.91 19 W Avg. 28 W Avg. VDD = 26 Vdc IDQ = 800 mA Pout = 38 W Avg. G ps, POWER GAIN (dB) 400 mA 11 VDD = 26 Vdc f = 1.96 GHz 10 1 10 Pout, OUTPUT POWER (WATTS) 100 1.92 1.93 Freescale Semiconductor, Inc... 1.94 1.95 1.96 1.97 f, FREQUENCY (GHz) 1.98 1.99 2.0 Figure 5. Power Gain versus Output Power Figure 6. Error Vector Magnitude versus Frequency 13.5 G ps, POWER GAIN (dB) 13 32 V 28 V 24 V VDD = 20 V EVM, ERROR VECTOR MAGNITUDE (%) 14 6 5 4 3 2 1 0 0 20 40 60 80 Pout, OUTPUT POWER (WATTS) 100 34 36 40 38 42 44 46 Pout, OUTPUT POWER (dBm) AVG. 48 50 EVM 14 13 12 11 10 9 8 G ps , POWER GAIN (dB) η , DRAIN EFFICIENCY (%) Gps 12.5 12 11.5 11 10.5 10 9.5 9 Figure 7. Power Gain versus Output Power Figure 8. EVM and Gain versus Output Power 14 13.5 G ps, POWER GAIN (dB) 13 −5 −10 −15 −20 −25 VDD = 26 Vdc IDQ = 800 mA 2.00 −30 −35 2.05 G ps, POWER GAIN (dB) 16 15 14 Gps 13 12 11 10 1 h VDD = 26 Vdc IDQ = 800 mA f = 1.96 GHz 60 50 40 30 20 10 0 100 30 W 12.5 80 W 12 30 W 11.5 80 W 11 1.85 1.90 1.95 f, FREQUENCY (GHz) 10 Pout, OUTPUT POWER (WATTS) Figure 9. Power Gain and IRL versus Frequency Figure 10. Power Gain and Efficiency versus Output Power MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF18085BR3 MRF18085BLSR3 5 Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS (Performed on a GSM EDGE Optimized Demo Board) Ref Lv1 −10 dBm −10 −20 −30 −40 −50 −60 −70 −80 −90 RBW 30 kHz VBW 30 kHz SWT 70 ms RF Att Unit 0 dB 0 dBm Freescale Semiconductor, Inc... −100 −110 Center 1.96 GHz 200 kHz Span 2 MHz Figure 11. EDGE Spectrum at 40 Watts (Avg.) Output Power MRF18085BR3 MRF18085BLSR3 6 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. Zo = 5 Ω Freescale Semiconductor, Inc... f = 1990 MHz Zload f = 1805 MHz f = 1805 MHz f = 1990 MHz Zsource VDD = 26 V, IDQ = 800 mA, Pout = 85 W CW f MHz 1805 1880 1930 1990 Zsource Ω 1.43 - j3.74 1.27 - j3.95 1.5 - j4.13 1.86 - j4.76 Zload Ω 2 - j3.60 1.98 - j3.57 2.13 - j3.16 2.17 - j3.36 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 12. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA MRF18085BR3 MRF18085BLSR3 7 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. NOTES Freescale Semiconductor, Inc... MRF18085BR3 MRF18085BLSR3 8 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. NOTES Freescale Semiconductor, Inc... MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF18085BR3 MRF18085BLSR3 9 Freescale Semiconductor, Inc. NOTES Freescale Semiconductor, Inc... MRF18085BR3 MRF18085BLSR3 10 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. PACKAGE DIMENSIONS B G 1 2X Q bbb M TA M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF 3 (FLANGE) B 2 K D bbb M TA M B M M (INSULATOR) R M (LID) bbb N (LID) M TA B M ccc M TA M B M S M (INSULATOR) Freescale Semiconductor, Inc... H ccc C TA M B M aaa M TA M B M F E A (FLANGE) A T SEATING PLANE CASE 465 - 06 ISSUE F NI - 780 MRF18085BR3 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE 4X U (FLANGE) B 1 4X Z (LID) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF (FLANGE) B 2 2X K D bbb M TA M B M N (LID) R M (LID) ccc M H 3 TA M B M ccc aaa M TA TA M B B M (INSULATOR) S M (INSULATOR) M bbb C M TA B M M M F T SEATING PLANE E A (FLANGE) A CASE 465A - 06 ISSUE F NI - 780S MRF18085BLSR3 STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF18085BR3 MRF18085BLSR3 11 Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... 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Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3- 3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MRF18085BR3 MRF18085BLSR3 12 ◊ For More Information On This Product, Go to: www.freescale.com MRF18085B/D MOTOROLA RF DEVICE DATA