MRF183LSR1

ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF183/D The RF MOSFET Line RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 28 volt base station equipment. • Guaranteed Performance at 945 MHz, 28 Volts Output Power — 45 Watts PEP Power Gain — 11.5 dB Efficiency — 33% IMD — - 28 dBc • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • S - Parameter Characterization at High Bias Levels • 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR @ 28 Vdc, 945 MHz, 45 Watts CW MRF183R1 MRF183LSR1 1.0 GHz, 45 W, 28 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs D CASE 360B - 05, STYLE 1 NI - 360 MRF183R1 ARCHIVED 2005 • In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. G S CASE 360C - 05, STYLE 1 NI - 360S MRF183LSR1 MAXIMUM RATINGS Rating Drain- Source Voltage Drain- Gate Voltage (RGS = 1 Meg Ohm) Gate - Source Voltage Drain Current - Continuous Total Device Dissipation @ TC = 70°C Derate above 70°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 65 65 ± 20 5 86 0.67 - 65 to +200 200 Unit Vdc Vdc Vdc Adc W W/°C °C °C THERMAL CHARACTERISTICS Max 1.5 Unit °C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 15 MOTOROLA RF  Motorola, Inc. 2003 DEVICE DATA MRF183R1 MRF183LSR1 1 Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain- Source Breakdown Voltage (VGS = 0 Vdc, ID = 50 mAdc) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Quiescent Voltage (VDS = 28 Vdc, ID = 250 mAdc) Drain- Source On - Voltage (VGS = 10 V, ID = 3 A) Forward Transconductance (VDS = 10 Vdc, ID = 5 Adc) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) Output Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) Ciss Coss Crss 82 38 4.5 pF pF pF VGS(Q) VDS(on) gfs 3 0.7 2 5 Vdc Vdc S BVDSS IDSS IGSS 65 1 1 Vdc µAdc µAdc Symbol Min Typ Max Unit ARCHIVED 2005 FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (VDD = 28 Vdc, Pout = 45 Watts PEP, f1 = 945.0, f2 = 945.1 MHz, IDQ = 250 mA) Two - Tone Common Source Amplifier Power Gain Two - Tone Drain Efficiency 3rd Order Intermodulation Distortion Input Return Loss Gps η IMD IRL 11.5 33 9 13.5 38 - 32 14 - 28 dB % dBc dB (VDD = 28 Vdc, Pout = 45 Watts PEP, f1 = 930.0, f2 = 930.1 MHz, and f1 = 960.0, f2 = 960.1 MHz, IDQ = 250 mA) Two - Tone Common Source Amplifier Power Gain Two - Tone Drain Efficiency 3rd Order Intermodulation Distortion Input Return Loss Output Mismatch Stress (VDD = 28 Vdc, Pout = 45 Watts CW, IDQ = 250 mA, f = 945 MHz, VSWR 5:1 at All Phase Angles) Gps η IMD IRL Ψ 13 35 - 32 12 dB % dBc dB No Degradation in Output Power Before and After Test MRF183R1 MRF183LSR1 2 MOTOROLA RF DEVICE DATA Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 VGG R1 + C1 R3 R2 B1 C2 C3 C4 L1 L2 B2 C13 C14 C15 + VDD C16 RF INPUT Z1 C5 Z2 C6 Z3 Z4 C8 Z5 Z6 C7 DUT C9 Z7 C10 Z8 Z9 Z10 C11 C12 Z11 RF OUTPUT B1 B2 C1 C2, C14 C3 C4, C13 C5, C12 C6, C11 C7, C8 C9, C10 C15 C16 L1, L2 R1 R2 Short Ferrite Bead Long Ferrite Bead 10 µF, 50 V Electrolytic Capacitor 0.1 µF Chip Capacitor 1000 pF Chip Capacitor 47 pf Chip Capacitor 47 pF Chip Capacitor 0.8 - 8.0 pF Trim Capacitor 10 pF Chip Capacitor 10 pF Chip Capacitor 100 pF Chip Capacitor 250 µF, 50 V Electrolytic Capacitor 5 Turns, 24 AWG, ID 0.059″ 120 Ω, 1/4 W Carbon 18 kΩ, 1/4 W Carbon R3 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Board 4.7 MΩ, 1/4 W Carbon T - Line, 0.200″ x 0.080″ T - Line, 0.570″ x 0.120″ T - Line, 0.610″ x 0.320″ T - Line, 0.160″ x 0.320″ x 0.620″ Tapered Line T - Line, 0.650″ x 0.620″ T - Line, 0.020″ x 0.620″ T - Line, 0.270″ x 0.320″ T - Line, 0.130″ x 0.320″ T - Line, 0.370″ x 0.080″ T - Line, 1.050″ x 0.080″ T - Line, 0.290″ x 0.080″ 0.030″ Glass Teflon, εr = 2.55 ARLON - GX - 0300 - 55 - 22 ARCHIVED 2005 Figure 1. MRF183LSR1 Two Tone Test Circuit Schematic MOTOROLA RF DEVICE DATA MRF183R1 MRF183LSR1 3 Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) − 20 − 25 − 30 − 35 − 40 − 45 − 50 − 55 − 60 − 65 − 70 0 5 10 15 20 25 30 35 40 Pout, OUTPUT POWER (WATTS) PEP 45 50 7th 5th VDD = 28 Vdc IDQ = 250 mA f1 = 945 MHz f2 = 945.1 MHz 3rd ORDER −20 − 25 − 30 − 35 − 40 − 45 − 50 − 55 0.1 250 mA 450 mA VDD = 28 Vdc f1 = 945 MHz f2 = 945.1 MHz 100 150 mA IDQ = 75 mA 1 10 Pout, OUTPUT POWER (WATTS) PEP Figure 2. Intermodulation Distortion Products versus Output Power 16 Pout , OUTPUT POWER (WATTS) 15.5 Gpe , POWER GAIN (dB) 15 IDQ = 450 mA 285 mA VDD = 28 Vdc f = 945 MHz 60 50 Figure 3. Intermodulation Distortion versus Output Power 16 15 14 13 Pout 20 10 0 VDD = 28 Vdc IDQ = 75 mA f = 945 MHz 0 0.5 1 2 2.5 1.5 3 Pin, INPUT POWER (WATTS) 3.5 4 12 11 10 Gpe , POWER GAIN (dB) Gpe 40 30 ARCHIVED 2005 14.5 14 150 mA 13.5 13 75 mA 1 10 Pout, OUTPUT POWER (WATTS) 100 Figure 4. Power Gain versus Output Power Figure 5. Output Power versus Input Power 90 P out , OUTPUT POWER (WATTS) P out , OUTPUT POWER (WATTS) 80 70 60 50 40 30 20 10 0 15 17 19 21 23 25 27 29 VDS, DRAIN VOLTAGE (VOLTS) VDD = 28 Vdc IDQ = 75 mA f1 = 945 MHz 31 33 35 1.0 W 2.0 W Pin = 4.0 W 50 45 40 35 30 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE BIAS (VOLTS) VDD = 28 Vdc Pin = 1.5 W f1 = 945 MHz 4 4.5 5 TYPICAL DEVICE SHOWN VGS(th) TYPICAL = 3.13 V Figure 6. Output Power versus Drain Bias Supply Voltage Figure 7. Output Power versus Gate Bias Supply Voltage MRF183R1 MRF183LSR1 4 MOTOROLA RF DEVICE DATA Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 TYPICAL CHARACTERISTICS 60 P out , OUTPUT POWER (WATTS) 50 40 30 20 10 0 800 VDD = 28 Vdc IDQ = 75 mA SINGLE TONE 820 840 860 880 900 920 940 f, FREQUENCY (MHz) 960 0.5 W 0.1 W 980 1000 Pin = 2.0 W 4000 3500 I D, DRAIN CURRENT (mA) 3000 2500 2000 TYPICAL DEVICE SHOWN 1.0 W 1500 1000 500 0 0 1 VDS = 28 Vdc 2 4 3 VGS, GATE VOLTAGE (VOLTS) 5 6 Figure 8. Output Power versus Frequency Figure 9. Drain Current versus Gate Voltage 120 100 C, CAPACITANCE (pF) 80 60 40 20 0 Coss Ciss 4.5 4 I D, DRAIN CURRENT (AMPS) 3.5 3 2.5 2 1.5 1 0.5 50 0 0 TJ = 175°C 5 15 25 10 20 30 VDS, DRAIN VOLTAGE (VOLTS) 35 40 TCASE = 100°C TCASE = 70°C ID = 3.67 A ARCHIVED 2005 VGS = 0 Vdc f = 1.0 MHz Crss 0 5 10 20 30 15 25 35 40 VDS, DRAIN−SOURCE VOLTAGE (VOLTS) 45 Figure 10. Capacitance versus Voltage Figure 11. Class A Safe Operating Region 60 50 P out , OUTPUT POWER (dBm) 40 30 20 10 0 3rd ORDER VDS = 26 Vdc ID = 1.8 A f1 = 945 MHz f2 = 945.1 MHz 15 20 25 30 Pin, INPUT POWER (dBm) 35 40 FUNDAMENTAL −10 − 20 − 30 − 40 10 Figure 12. Class A Third Order Intercept Point MOTOROLA RF DEVICE DATA MRF183R1 MRF183LSR1 5 Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 TYPICAL CHARACTERISTICS η, EFFICIENCY (%) INTERMODULATION DISTORTION (dBc) 3.00 1.00 INPUT VSWR 2.00 C14 C15 TO DRAIN BIAS FEEDTHRU 14 13 12 G T, GAIN (dB) 11 10 9 IMD 8 7 6 925 930 935 VSWR 940 945 950 f, FREQUENCY (MHz) 955 960 −32 −33 −34 965 GAIN 40 η 35 −30 −31 45 Figure 13. Broadband Power Performance of MRF183LSR1 C1 ARCHIVED 2005 TO GATE BIAS FEEDTHRU R2 R1 C2 B1 C3 C4 IND1 C8 C9 B2 C13 IND2 C10 C7 C16 C5 C6 C12 C11 MRF183S Figure 14. MRF183LSR1 Two Tone Test Circuit Component Parts Layout MRF183R1 MRF183LSR1 6 MOTOROLA RF DEVICE DATA Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Z 0 = 10 Ω f = 930 MHz Zin f = 960 MHz f = 930 MHz ZOL* f = 960 MHz ARCHIVED 2005 VDD = 28 V, IDQ = 250 mA, Pout = 45 W PEP f MHz 930 945 960 Zin Ohms 1.10 + j0.93 1.10 + j0.78 1.10 + j0.60 ZOL* Ohms 2.60 − j0.13 2.70 − j0.28 2.80 − j0.42 Zin = Conjugate of source impedance. Conjugate of the load impedance at a given output power, voltage, and current conditions. ZOL* = Note: ZOL* was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion. Figure 15. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA MRF183R1 MRF183LSR1 7 Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Table 1. Typical Common Source S - Parameters (VDS = 13.5 V) ID = 1.5 A f MHz 20 30 40 50 60 70 80 90 100 150 200 250 300 350 400 450 500 550 600 650 S11 |S11| 0.954 0.941 0.922 0.907 0.903 0.899 0.898 0.896 0.897 0.895 0.898 0.902 0.908 0.905 0.913 0.920 0.924 0.922 0.931 0.935 0.935 0.937 0.940 0.943 0.945 0.947 0.947 0.947 0.952 0.949 0.946 0.954 0.952 0.949 0.948 0.948 0.940 ∠φ - 157 - 164 - 168 - 171 - 172 - 173 - 174 - 175 - 175 - 177 - 178 - 178 - 179 - 179 - 180 180 179 179 178 178 177 177 176 176 175 174 174 173 172 172 171 170 170 169 168 168 167 |S21| 29.58 19.73 14.84 11.94 9.75 8.34 7.29 6.49 5.83 3.82 2.84 2.24 1.84 1.55 1.32 1.15 1.01 0.89 0.80 0.72 0.64 0.59 0.54 0.50 0.46 0.43 0.40 0.37 0.35 0.32 0.30 0.28 0.27 0.26 0.23 0.22 0.21 S21 ∠φ 100 96 93 91 89 88 86 85 84 79 74 70 66 62 58 54 51 47 44 41 38 37 33 30 28 26 24 21 19 17 14 12 9 9 8 6 4 |S12| 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.016 0.016 0.015 0.015 0.014 0.014 0.013 0.013 0.012 0.011 0.011 0.012 0.012 0.012 0.010 0.009 0.008 0.007 0.007 0.007 0.006 0.006 0.006 0.006 0.005 0.004 0.004 S12 ∠φ 11 8 4 3 2 0 -1 -2 -2 -6 -9 - 11 - 14 - 16 - 18 - 18 - 20 - 21 - 21 - 20 - 17 - 18 - 20 - 29 - 33 - 34 - 29 - 24 - 19 - 17 - 16 - 13 - 12 - 10 -7 4 19 |S22| 0.778 0.796 0.804 0.808 0.812 0.814 0.816 0.816 0.817 0.822 0.828 0.835 0.842 0.850 0.861 0.865 0.874 0.881 0.889 0.895 0.901 0.905 0.913 0.919 0.924 0.930 0.935 0.939 0.944 0.948 0.948 0.953 0.950 0.951 0.953 0.948 0.944 S22 ∠φ - 161 - 168 - 170 - 172 - 173 - 174 - 175 - 175 - 175 - 176 - 176 - 176 - 176 - 176 - 176 - 176 - 177 - 177 - 177 - 177 - 178 - 178 - 178 - 179 - 179 - 180 180 179 179 178 177 177 176 176 175 174 174 ARCHIVED 2005 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 MRF183R1 MRF183LSR1 8 MOTOROLA RF DEVICE DATA Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Table 2. Typical Common Source S - Parameters (VDS = 28 V) ID = 1.5 A f MHz 20 30 40 50 60 70 80 90 100 150 200 250 300 350 400 450 500 550 600 650 S11 |S11| 0.968 0.953 0.921 0.904 0.898 0.890 0.886 0.886 0.887 0.886 0.890 0.898 0.906 0.908 0.915 0.924 0.930 0.928 0.937 0.944 0.943 0.946 0.949 0.954 0.953 0.957 0.957 0.957 0.962 0.959 0.955 0.962 0.959 0.956 0.954 0.955 0.948 ∠φ - 132 - 145 - 154 - 159 - 163 - 165 - 167 - 168 - 169 - 172 - 174 - 175 - 176 - 177 - 178 - 178 - 179 - 180 180 179 178 178 177 177 175 175 174 174 173 172 171 170 170 169 168 168 167 |S21| 45.79 31.75 24.33 19.68 16.11 13.79 12.06 10.71 9.61 6.26 4.59 3.57 2.88 2.37 2.00 1.71 1.48 1.28 1.13 1.00 0.88 0.81 0.73 0.67 0.61 0.56 0.51 0.48 0.45 0.41 0.39 0.36 0.33 0.31 0.29 0.28 0.26 S21 ∠φ 113 106 99 95 92 90 87 86 84 76 69 64 59 54 49 45 41 37 33 30 27 25 22 20 18 15 13 10 8 7 4 2 0 -1 -4 -6 -7 |S12| 0.014 0.015 0.015 0.015 0.015 0.015 0.015 0.015 0.015 0.015 0.014 0.014 0.013 0.012 0.011 0.010 0.010 0.009 0.008 0.007 0.008 0.008 0.009 0.009 0.007 0.005 0.004 0.004 0.004 0.004 0.004 0.004 0.004 0.004 0.004 0.004 0.004 S12 ∠φ 24 17 12 7 5 2 1 -1 -3 -9 - 13 - 17 - 19 - 23 - 24 - 25 - 26 - 26 - 25 - 22 - 14 - 15 - 17 - 28 - 34 - 32 - 22 - 11 -2 3 9 13 17 25 32 46 56 |S22| 0.579 0.623 0.648 0.661 0.670 0.677 0.681 0.684 0.688 0.706 0.724 0.744 0.764 0.785 0.807 0.821 0.838 0.851 0.865 0.878 0.888 0.895 0.906 0.912 0.919 0.927 0.934 0.939 0.945 0.950 0.950 0.955 0.953 0.954 0.957 0.952 0.948 S22 ∠φ - 145 - 157 - 161 - 164 - 166 - 167 - 168 - 169 - 169 - 170 - 170 - 169 - 169 - 169 - 170 - 170 - 171 - 171 - 172 - 172 - 173 - 173 - 174 - 175 - 175 - 176 - 177 - 178 - 178 - 179 - 180 180 179 178 177 177 176 ARCHIVED 2005 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 MOTOROLA RF DEVICE DATA MRF183R1 MRF183LSR1 9 Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 NOTES ARCHIVED 2005 MRF183R1 MRF183LSR1 10 MOTOROLA RF DEVICE DATA Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 PACKAGE DIMENSIONS 2X B G 1 Q aaa M TA M B M NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. INCHES MIN MAX 0.795 0.805 0.225 0.235 0.125 0.175 0.210 0.220 0.055 0.065 0.004 0.006 0.562 BSC 0.077 0.087 0.220 0.250 0.355 0.365 0.357 0.363 0.125 0.135 0.227 0.233 0.225 0.235 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.19 20.45 5.72 5.97 3.18 4.45 5.33 5.59 1.40 1.65 0.10 0.15 14.28 BSC 1.96 2.21 5.59 6.35 9.02 9.27 9.07 9.22 3.18 3.43 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF 3 (FLANGE) 2X B 2 D bbb M T A N 2X M K H (LID) R ccc M TA M B M B M F (LID) ccc M TA C M B M E (INSULATOR) S aaa T (INSULATOR) SEATING PLANE M TA M B M DIM A B C D E F G H K M N Q R S aaa bbb ccc M bbb M TA M B M A A CASE 360B - 05 ISSUE F NI - 360 MRF183R1 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE A B (FLANGE) A ARCHIVED 2005 1 NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX 0.375 0.385 0.225 0.235 0.105 0.155 0.210 0.220 0.035 0.045 0.004 0.006 0.067 0.057 0.085 0.115 0.355 0.365 0.357 0.363 0.227 0.23 0.225 0.235 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 9.53 9.78 5.72 5.97 2.67 3.94 5.33 5.59 0.89 1.14 0.10 0.15 1.70 1.45 2.16 2.92 9.02 9.27 9.07 9.22 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF (FLANGE) B 2 2X D M 2X K M (LID) R bbb TA M B ccc H M TA M B F M (LID) N ccc E M TA M B M (INSULATOR) S C PIN 3 bbb M aaa M TA M B M (INSULATOR) M T M SEATING PLANE M STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE TA B CASE 360C - 05 ISSUE D NI - 360S MRF183LSR1 MOTOROLA RF DEVICE DATA MRF183R1 MRF183LSR1 11 Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 ARCHIVED 2005 Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. 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MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2003 HOW TO REACH US: USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MRF183R1 MRF183LSR1 12 ◊ MOTOROLA RF DEVICE DATA MRF183/D Archived 2005