MRF184R1

ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF184/D The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 28 volt base station equipment. D • Guaranteed Performance @ 945 MHz, 28 Volts Output Power = 60 Watts Power Gain = 11.5 dB Efficiency = 53% • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters G • S–Parameter Characterization at High Bias Levels • 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR @ 28 Vdc, 945 MHz, 60 Watts CW • In Tape and Reel. 500 Units per 32 mm, 13 inch Reel. S MRF184R1 MRF184SR1 1.0 GHz, 60 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs CASE 360B–05, STYLE 1 NI–360 MRF184R1 CASE 360C–05, STYLE 1 NI–360S MRF184SR1 ARCHIVED 2005 MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 70°C Derate above 70°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS ID PD Tstg TJ Value 65 ±20 7 118 0.9 – 65 to +150 200 Unit Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 1.1 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0 Vdc, ID = 1 mAdc) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate–Source Leakage Current (VGS = 20 Vd, VDS = 0 Vdc) V(BR)DSS IDSS IGSS 65 – – – – – – 1 1 Vdc µAdc µAdc NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 10 MOTOROLA RF  Motorola, Inc. 2002 DEVICE DATA MRF184R1 MRF184SR1 1 Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 ELECTRICAL CHARACTERISTICS – continued (TC = 25°C unless otherwise noted) Characteristic ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 V, ID = 200 µA) Gate Quiescent Voltage (VDS = 28 V, ID = 100 mA) Drain–Source On–Voltage (VGS = 10 V, ID = 3 A) Forward Transconductance (VDS = 10 V, ID = 3 A) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 28 V, VGS = 0 V, f = 1 MHz) Output Capacitance (VDS = 28 V, VGS = 0 V, f = 1 MHz) Reverse Transfer Capacitance (VDS = 28 V, VGS = 0 V, f = 1 MHz) FUNCTIONAL CHARACTERISTICS Common Source Power Gain (VDD = 28 V, Pout = 60 W, f = 945 MHz, IDQ = 100 mA) Drain Efficiency (VDD = 28 V, Pout = 60 W, f = 945 MHz, IDQ = 100 mA) Gps η ψ No Degradation in Output Power 11.5 53 13.5 60 – – dB % Ciss Coss Crss – – – 83 44 4.3 – – – pF pF pF VGS(th) VGS(Q) VDS(on) gfs 2 3 – 2.2 3 4 0.65 2.6 4 5 0.8 – Vdc Vdc Vdc s Symbol Min Typ Max Unit ARCHIVED 2005 Load Mismatch (VDD = 28 V, Pout = 60 W, IDQ = 100 mA, f = 945 MHz, Load VSWR 5:1 at all Phase Angles) VGG R1 R2 C5 R3 C6 C7 C8 R4 C11 C9 C2 L1 B1 C10 C13 C12 VDD RF INPUT TL1 DUT C1 TL2 TL3 C4 TL4 RF OUTPUT C3 5 Turns, 20 AWG, IDIA 0.126″ 10 kΩ, 1/4 W Resistor 13 kΩ, 1/4 W Resistor 1.0 kΩ, 1/4 W Chip Resistor 4 x 39 Ω, 1/8 W Chip Resistor Microstrip Line See Photomaster 1/32″ Glass Teflon, εr = 2.55 ARLON–GX–0300–55–22 B1 C1 C2, C3, C6, C9 C4 C5, C12 C7, C10 C8, C11 C13 Short RF Bead Fair Rite–2743019447 18 pF Chip Capacitor 43 pF Chip Capacitor 100 pF Chip Capacitor 10 µF, 50 Vdc Electrolytic Capacitor 1000 pF Chip Capacitor 0.1 µF, 50 Vdc Chip Capacitor 250 µF, 50 Vdc Electrolytic Capacitor L1 R1 R2 R3 R4 TL1–TL4 Ckt Board Figure 1. MRF184 Test Circuit Schematic MRF184R1 MRF184SR1 2 MOTOROLA RF DEVICE DATA Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) - 20 - 30 - 40 - 50 - 60 -70 - 80 3rd ORDER -15 - 25 IDQ = 100 mA - 35 250 mA 600 mA - 45 400 mA - 55 0.1 VDD = 28 Vdc f1 = 945 MHz f2 = 945.1 MHz 100 5th 7th VDD = 28 Vdc f1 = 945 MHz f2 = 945.1 MHz IDQ = 400 mA 0 10 20 30 40 50 Pout, OUTPUT POWER (WATTS) PEP 60 70 1 10 Pout, OUTPUT POWER (WATTS) PEP Figure 2. Intermodulation Distortion Products versus Output Power 18 Pout , OUTPUT POWER (WATTS) 80 70 60 50 40 30 20 10 100 0 0 Figure 3. Intermodulation Distortion versus Output Power 16 Gps Gps , POWER GAIN (dB) Gps , POWER GAIN (dB) 16 IDQ = 600 mA 400 mA 250 mA ARCHIVED 2005 15 Pout VDS = 28 Vdc IDQ = 400 mA f = 945 MHz 0.5 1 2 1.5 Pin, INPUT POWER (WATTS) 2.5 14 100 mA VDD = 28 Vdc f = 945 MHz 1 10 Pout, OUTPUT POWER (WATTS) 12 14 3 Figure 4. Power Gain versus Output Power Figure 5. Output Power versus Input Power 100 90 P out , OUTPUT POWER (WATTS) 80 70 60 50 40 30 20 10 0 12 14 16 20 24 18 22 26 VDD, SUPPLY VOLTAGE (VOLTS) Pin = 4.0 W P out , OUTPUT POWER (WATTS) 80 70 60 50 40 30 20 10 32 0 0 0.5 VDS = 28 Vdc Pin = 2.0 W f = 945 MHz 1 2 3.5 1.5 2.5 3 4 VGS, GATE-SOURCE VOLTAGE (VOLTS) 4.5 5 TYPICAL DEVICE SHOWN 2.0 W 1.0 W IDQ = 400 mA f = 945 MHz 28 30 Figure 6. Output Power versus Supply Voltage Figure 7. Output Power versus Gate Voltage MOTOROLA RF DEVICE DATA MRF184R1 MRF184SR1 3 Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 TYPICAL CHARACTERISTICS 90 P out , OUTPUT POWER (WATTS) 80 I D, DRAIN CURRENT (A) 70 60 Pin = 2.5 W 4 3.5 3 2.5 2 1.5 1 0.5 820 840 860 880 900 920 940 f, FREQUENCY (MHz) 960 980 1000 0 0 1 VDS = 28 Vdc TYPICAL DEVICE SHOWN 50 VDD = 28 Vdc IDQ = 400 mA SINGLE TONE 1.0 W 0.5 W 40 30 20 10 0 800 3 2 4 VGS, GATE VOLTAGE (VOLTS) 5 6 Figure 8. Output Power versus Frequency 140 120 C, CAPACITANCE (pF) 100 80 60 40 20 0 0 VGS = 0 Vdc f = 1.0 MHz Coss Ciss I D, DRAIN CURRENT (AMPS) 6 5.5 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 Figure 9. Drain Current versus Gate Voltage ARCHIVED 2005 Crss 5 15 25 35 40 10 20 30 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 45 50 TJ = 150°C TF = 70°C 0 5 15 25 10 20 VDS, DRAIN VOLTAGE (Vdc) 30 35 Figure 10. Capacitance versus Voltage Figure 11. DC Safe Operating Area 7 6.5 6 5.5 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 I D, DRAIN CURRENT (AMPS) 15.5 Gps , POWER GAIN (dB) 15 14.5 14 13.5 15 25 10 20 VDS, DRAIN VOLTAGE (Vdc) 30 13 880 VDD = 28 Vdc IDQ = 400 mA Pout = 60 W (CW) 900 η 60 55 Gps 50 45 40 35 980 0 5 35 920 940 f, FREQUENCY (MHz) 960 Figure 12. DC Safe Operating Area Figure 13. Performance in Broadband Circuit MRF184R1 MRF184SR1 4 MOTOROLA RF DEVICE DATA Archived 2005 1.0 TJ = 175°C TF = 70°C VSWR 1.5 2.0 INPUT VSWR 2.5 η , EFFICIENCY (%) 16 65 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 60 50 P out , OUTPUT POWER (dBm) 40 30 20 10 0 3rd ORDER VDS = 26 Vdc ID = 2.1 A f1 = 945 MHz f2 = 945.1 MHz 15 25 20 30 Pin, INPUT POWER (dBm) 35 40 FUNDAMENTAL -10 - 20 - 30 - 40 10 Figure 14. Class A Third Order Intercept Point R1 C5 R2 C8 C7 C6 R3 C2 B1 C9 R4 L1 C11 C12 C10 C13 ARCHIVED 2005 C1 TL2 TL1 TL3 C4 TL4 C3 MRF184 Figure 15. Component Parts Layout MOTOROLA RF DEVICE DATA MRF184R1 MRF184SR1 5 Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Zin 900 800 f = 1000 MHz 950 850 f = 1000 MHz 950 850 900 800 ZOL* Z0 = 10 Ω ARCHIVED 2005 VDD = 28 Vdc, IDQ = 100 mA, Pout = 60 W f MHz 800 850 900 950 1000 Zin Zin Ohms 0.40 + j0.90 0.45 + j1.10 0.52 + j1.20 0.60 + j1.30 0.70 + j1.38 ZOL* Ohms 1.85 - j1.00 1.75 - j0.90 1.70 - j0.75 1.60 - j0.50 1.57 - j0.40 = Conjugate of source impedance. Zout = Conjugate of the load impedance at a given output power, voltage, frequency and efficiency. Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency and device stability. Figure 16. Series Equivalent Input and Output Impedance MRF184R1 MRF184SR1 6 MOTOROLA RF DEVICE DATA Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Table 1. Common Source S–Parameters (VDS = 13.5 V) ID = 2.0 A f MHz 20 30 40 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 S11 |S11| 0.916 0.917 0.918 0.919 0.919 0.920 0.921 0.922 0.928 0.938 0.941 0.942 0.943 0.945 0.947 0.948 0.955 0.959 0.962 0.963 0.964 0.968 0.970 0.971 0.972 0.973 0.974 0.976 0.975 0.972 0.969 0.965 0.959 ∠φ 179 178 177 176 175 174 173 173 172 172 171 171 171 171 171 171 170 170 169 169 169 169 169 168 168 168 167 167 167 166 166 165 164 |S21| 10.88 9.26 8.10 7.16 4.57 3.34 2.60 2.11 1.77 1.50 1.28 1.12 1.00 0.91 0.80 0.71 0.65 0.60 0.55 0.50 0.45 0.43 0.39 0.36 0.34 0.32 0.29 0.28 0.26 0.25 0.24 0.22 0.21 S21 ∠φ 80 79 78 77 75 67 62 59 55 50 47 44 41 38 35 33 30 28 25 23 21 19 18 17 14 13 12 10 9 8 7 6 5 |S12| 0.014 0.014 0.015 0.015 0.015 0.015 0.014 0.014 0.014 0.013 0.013 0.012 0.012 0.010 0.010 0.009 0.008 0.008 0.007 0.007 0.007 0.006 0.006 0.005 0.005 0.005 0.006 0.007 0.008 0.009 0.011 0.012 0.013 S12 ∠φ –22 –25 –29 –33 –35 –38 –41 –45 –49 –55 –59 –62 –68 –75 –79 –85 –88 –95 –102 –111 –118 –125 –129 –134 –142 –149 –156 –162 –173 –178 175 172 169 |S22| 0.843 0.847 0.852 0.853 0.855 0.865 0.867 0.877 0.881 0.887 0.895 0.896 0.898 0.899 0.903 0.905 0.909 0.919 0.922 0.923 0.926 0.929 0.933 0.935 0.936 0.938 0.940 0.943 0.945 0.946 0.947 0.948 0.950 S22 ∠φ 175 174 174 174 173 173 173 173 173 173 173 173 172 172 172 172 172 172 172 171 171 171 171 171 170 170 169 169 168 167 167 167 167 ARCHIVED 2005 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 MOTOROLA RF DEVICE DATA MRF184R1 MRF184SR1 7 Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Table 2. Common Source S–Parameters (VDS = 28 V) ID = 2.0 A f MHz 20 30 40 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 S11 |S11| 0.912 0.917 0.918 0.919 0.922 0.930 0.931 0.933 0.941 0.943 0.945 0.948 0.950 0.955 0.960 0.965 0.967 0.970 0.973 0.974 0.975 0.976 0.978 0.979 0.980 0.980 0.979 0.978 0.974 0.971 0.970 0.969 0.965 ∠φ –170 –173 –174 –176 –178 177 176 175 174 173 172 172 172 172 172 171 171 171 170 169 169 169 168 168 168 167 167 167 167 166 165 165 164 |S21| 16.01 13.73 12.02 10.62 6.76 4.92 3.82 3.07 2.53 2.14 1.83 1.58 1.39 1.24 1.10 0.96 0.89 0.80 0.73 0.66 0.61 0.57 0.52 0.47 0.43 0.41 0.38 0.36 0.34 0.32 0.31 0.30 0.27 S21 ∠φ 84 82 80 78 71 65 60 55 51 45 41 38 35 32 29 26 24 20 18 17 13 12 11 9 7 6 5 2 1 0 –1 –2 –3 |S12| 0.016 0.015 0.014 0.013 0.012 0.011 0.010 0.009 0.009 0.008 0.008 0.007 0.007 0.007 0.006 0.006 0.006 0.005 0.005 0.004 0.004 0.004 0.004 0.005 0.005 0.006 0.006 0.006 0.007 0.007 0.007 0.008 0.008 S12 ∠φ –12 –15 –17 –20 –22 –25 –27 –29 –31 –35 –45 –52 –57 –61 –64 –68 –71 –73 –78 –83 –91 –94 –96 –102 –115 –119 –125 –139 –148 –156 –165 –171 –178 |S22| 0.746 0.755 0.759 0.766 0.775 0.791 0.791 0.793 0.826 0.834 0.853 0.858 0.865 0.876 0.882 0.888 0.894 0.904 0.906 0.908 0.909 0.915 0.916 0.919 0.924 0.931 0.934 0.935 0.936 0.937 0.938 0.939 0.946 S22 ∠φ 178 177 177 176 176 176 176 176 176 176 176 176 176 176 176 175 175 175 175 174 173 173 173 172 172 171 170 170 170 169 169 169 169 ARCHIVED 2005 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 MRF184R1 MRF184SR1 8 MOTOROLA RF DEVICE DATA Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 NOTES ARCHIVED 2005 MOTOROLA RF DEVICE DATA MRF184R1 MRF184SR1 9 Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 NOTES ARCHIVED 2005 MRF184R1 MRF184SR1 10 MOTOROLA RF DEVICE DATA Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 PACKAGE DIMENSIONS Q aaa 2X B G 1 M TA M B M NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. INCHES MIN MAX 0.795 0.805 0.225 0.235 0.125 0.175 0.210 0.220 0.055 0.065 0.004 0.006 0.562 BSC 0.077 0.087 0.220 0.250 0.355 0.365 0.357 0.363 0.125 0.135 0.227 0.233 0.225 0.235 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.19 20.45 5.72 5.97 3.18 4.45 5.33 5.59 1.40 1.65 0.10 0.15 14.28 BSC 1.96 2.21 5.59 6.35 9.02 9.27 9.07 9.22 3.18 3.43 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF 3 B (FLANGE) 2X 2 R (LID) 2X M D bbb M T A K ccc H M TA M B M B M F N (LID) ccc M TA C M B M E S (INSULATOR) aaa T M (INSULATOR) SEATING PLANE M TA M B M DIM A B C D E F G H K M N Q R S aaa bbb ccc bbb M TA M B M A A A B A (FLANGE) CASE 360B–05 ISSUE F NI–360 MRF184R1 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE ARCHIVED 2005 1 NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX 0.375 0.385 0.225 0.235 0.105 0.155 0.210 0.220 0.035 0.045 0.004 0.006 0.057 0.067 0.085 0.115 0.355 0.365 0.357 0.363 0.227 0.23 0.225 0.235 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 9.53 9.78 5.72 5.97 2.67 3.94 5.33 5.59 0.89 1.14 0.10 0.15 1.45 1.70 2.16 2.92 9.02 9.27 9.07 9.22 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF B (FLANGE) 2X 2 2X K M D M R (LID) bbb TA M B ccc H M TA M B F M N (LID) ccc E M TA M B M S (INSULATOR) C PIN 3 bbb M SEATING PLANE M aaa M TA M B M STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE M (INSULATOR) T M TA B CASE 360C–05 ISSUE D NI–360S MRF184SR1 MOTOROLA RF DEVICE DATA MRF184R1 MRF184SR1 11 Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 ARCHIVED 2005 Motorola reserves the right to make changes without further notice to any products herein. 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All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T. Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF184R1 MRF184SR1 12 ◊ MOTOROLA RF DEVICE DATA MRF184/D Archived 2005