MRF187R3

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF187/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 26 volt base station equipment. • Guaranteed Performance @ 880 MHz, 26 Volts Output Power — 85 Watts PEP Power Gain — 12 dB Efficiency — 30% Intermodulation Distortion — –28 dBc • 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR @ 26 Vdc, 880 MHz, 85 Watts CW • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters • Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel. 1.0 GHz, 85 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs LIFETIME BUY CASE 465–06, STYLE 1 NI–780 MRF187 CASE 465A–06, STYLE 1 NI–780S MRF187SR3 MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1 MΩ) Gate–Source Voltage Drain Current — Continuous Total Device Dissipation @ TC ≥ 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ Value 65 65 ±20 15 250 1.43 –65 to +200 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.70 Unit °C/W NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 4 MOTOROLA RF  Motorola, Inc. 2002 DEVICE DATA MRF187 MRF187R3 MRF187SR3 1 LAST ORDER 31JUL04 LAST SHIP 31JAN05 RF Power Field Effect Transistors MRF187 MRF187R3 MRF187SR3 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0 Vdc, ID = 50 µAdc) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate–Source Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Quiescent Voltage (VDS = 26 Vdc, ID = 550 mAdc) Drain–Source On–Voltage (VGS = 10 Vdc, ID = 3 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 5 Adc) VGS(Q) VDS(on) gfs 3 — — — 0.40 2 5 0.55 — Vdc Vdc S V(BR)DSS IDSS IGSS 65 — — — — — — 1 1 Vdc µAdc µAdc Symbol Min Typ Max Unit LIFETIME BUY DYNAMIC CHARACTERISTICS Input Capacitance (Includes Internal Input MOScap) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Ciss Coss Crss — — — 295 85 10 — — — pF pF pF FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) Two–Tone Common–Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 85 W PEP, IDQ = 550 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) Two–Tone Drain Efficiency (VDD = 26 Vdc, Pout = 85 W PEP, IDQ = 550 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 85 W PEP, IDQ = 550 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 85 W PEP, IDQ = 550 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) Two–Tone Common–Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 85 W PEP, IDQ = 550 mA, f1 = 865.0 MHz, f2 = 865.1 MHz and f1 = 895.0 MHz, f2 = 895.1 MHz) Two–Tone Drain Efficiency (VDD = 26 Vdc, Pout = 85 W PEP, IDQ = 550 mA, f1 = 865.0 MHz, f2 = 865.1 MHz and f1 = 895.0 MHz, f2 = 895.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 85 W PEP, IDQ = 550 mA, f1 = 865.0 MHz, f2 = 865.1 MHz and f1 = 895.0 MHz, f2 = 895.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 85 W PEP, IDQ = 550 mA, f1 = 865.0 MHz, f2 = 865.1 MHz and f1 = 895.0 MHz, f2 = 895.1 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 85 W CW, IDQ = 550 mA, f = 880 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests) Gps 12 13 — dB ηD 30 33 — % IMD — –31 –28 dBc IRL 9 15 — dB Gps — 13 — dB ηD — 33 — % IMD — –31 — dBc IRL — 12 — dB Ψ No Degradation In Output Power Before and After Test MRF187 MRF187R3 MRF187SR3 2 MOTOROLA RF DEVICE DATA LAST ORDER 31JUL04 LAST SHIP 31JAN05 VGG + R1 + C1 C2 R2 R3 B1 B2 + + VDD + C16 C17 C18 C19 L1 L2 RF INPUT Z7 C8 Z1 C5 C6 C7 C9 Z2 Z3 Z4 Z5 Z6 DUT C11 Z8 Z9 Z4 Z10 C20 Z11 RF OUTPUT C10 C14 C15 LIFETIME BUY Figure 1. MRF187 Schematic MOTOROLA RF DEVICE DATA MRF187 MRF187R3 MRF187SR3 3 LAST ORDER 31JUL04 B1 – B2 C1 C2, C16 C3 C4, C13 C5, C20 C6, C15 C7 C8, C9 C10, C11 C12 C14 C17, C18, C19 Ferrite Bead, Fair Rite, 2743019447 10 µF, 50 V, Electrolytic Capacitor, ECEV1HV100R Panasonic 0.10 µF, B Case Chip Capacitors, CDR33BX104AKWS, Kemet 20000 pF, B Case Chip Capacitor, 200B203MCA50X, ATC 100 pF, B Case Chip Capacitors, 100B101JCA500X, ATC 47 pF, B Case Chip Capacitors, 100B470JCA500X, ATC 0.8 – 8.0 pF, Variable Capacitors, Johanson Gigatrim 4.7 pF, B Case Chip Capacitor, 100B4R7JCA500X, ATC 10 pF, B Case Chip Capacitors, 100B100JCA500X, ATC 16 pF, B Case Chip Capacitors, 100B160JCA500X, ATC 43 pF, B Case Chip Capacitor, 100B430JCA500X, ATC 7.5 pF, B Case Chip Capacitor, 100B7R5JCA500X, ATC 10 µF, 35 V, Electrolytic Capacitors, SMT, Kemet L1, L2 R1 R2 R3 Z1, Z11 Z2, Z10 Z3 Z4 Z5 Z6 Z7 Z8 5 Turns, #24 AWG, 0.059″ OD 12 Ω, 1/4 Watt Carbon 4.7 MΩ, 1/4 Watt Carbon 16 kΩ, 1/4 Watt Carbon 0.150″ x 0.220″ Microstrip 0.410″ x 0.220″ Microstrip 0.160″ x 0.630″ Microstrip 0.160″ x 0.630″ Microstrip 0.098″ x 0.630″ Microstrip 0.098″ x 0.630″ Microstrip 0.210″ x 0.220″ Microstrip 0.050″ x 0.220″ Microstrip LAST SHIP 31JAN05 C3 C4 C12 C13 TYPICAL CHARACTERISTICS ηD , DRAIN EFFICIENCY (%), Gps , POWER GAIN (dB) IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) 40 35 30 25 20 15 10 5 0 865 870 IRL VDD = 26 V IDQ = 550 mA, Pout = 85 WATTS (PEP) TWO-TONE MEASUREMENT, 100 kHz TONE SPACING Gps IMD 875 880 885 f, FREQUENCY (MHz) 890 ηD 0 -5 -10 -15 -20 -25 -30 -35 -40 895 -10 -20 -30 -40 -50 -60 -70 0.1 3rd Order 7th Order 5th Order 10 1.0 Pout, OUTPUT POWER (WATTS) PEP 100 LIFETIME BUY Figure 2. Class AB Broadband Circuit Performance Figure 3. Intermodulation Distortion Products versus Output Power Pout, OUTPUT POWER (WATTS) PEP, ηD , DRAIN EFFICIENCY (%) 160 140 120 Gps Pout 16 14 G ps , POWER GAIN (dB) G ps , POWER GAIN (dB) 12 17 16 15 14 13 12 11 10 0.1 250 mA 1100 mA 900 mA 700 mA 550 mA 400 mA 1300 mA 100 80 60 40 20 0 0 0.5 1.0 ηD 4 2 4.5 5.0 0 5.5 VDD = 26 V f = 880 MHz TWO-TONE MEASUREMENT, 100 kHz TONE SPACING 1.0 10 Pout, OUTPUT POWER (WATTS) PEP 100 1.5 2.0 2.5 3.0 3.5 4.0 Pin, INPUT POWER (WATTS) Figure 4. Class AB Parameters versus Input Power - 10 - 20 - 30 - 40 400 mA - 50 - 60 0.1 900 mA 1300 mA 550 mA 1.0 10 VDD = 26 V f = 880 MHz TWO-TONE MEASUREMENT, 100 kHz TONE SPACING 250 mA Figure 5. Power Gain versus Output Power 1100 mA 700 mA 100 Pout, OUTPUT POWER (WATTS) PEP Figure 6. Intermodulation Distortion versus Output Power MRF187 MRF187R3 MRF187SR3 4 MOTOROLA RF DEVICE DATA LAST ORDER 31JUL04 VDD = 26 V IDQ = 550 mA f = 880 MHz TWO-TONE MEASUREMENT, 100 kHz TONE SPACING 10 8 6 IMD, INTERMODULATION DISTORTION (dBc) LAST SHIP 31JAN05 VDD = 26 V IDQ = 550 mA f = 880 MHz TWO-TONE MEASUREMENT, 100 kHz TONE SPACING f = 865 MHz 895 MHz Zin Zo = 10 Ω LIFETIME BUY f = 865 MHz ZOL* 895 MHz VCC = 26 V, IDQ = 550 mA, Pout = 85 W PEP f MHz 865 880 895 Zin Zin Ω 1.04 + j1.51 1.03 + j1.39 1.03 + j1.29 ZOL* Ω 1.13 – j0.091 1.20 – j0.176 1.28 – j0.242 = Complex conjugate of source impedance. Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. ZOL* was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion. ZOL* = Note: Figure 7. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA MRF187 MRF187R3 MRF187SR3 5 LAST ORDER 31JUL04 LAST SHIP 31JAN05 C1 TO GATE BIAS FEEDTHRU R1 C2 R3 C3 B1 C4 L1 Z2 Z3 C8 C11 Z5 C13 C12 C16 B2 TO DRAIN BIAS FEEDTHRU C17 C18 C19 Z7 C14 Z8 C15 C20 R2 L2 C5 Z1 C7 Z4 C9 Z6 C10 C6 LIFETIME BUY REV 1 Figure 8. MRF187 Populated PC Board Layout Diagram MRF187 MRF187R3 MRF187SR3 6 MOTOROLA RF DEVICE DATA LAST ORDER 31JUL04 LAST SHIP 31JAN05 PACKAGE DIMENSIONS B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF G 1 2X Q bbb M TA M B M 3 B (FLANGE) 2 K D bbb M TA M B M M (INSULATOR) R M (LID) bbb N H C (LID) M TA TA B B M ccc aaa M TA TA M B B M S M M M M M (INSULATOR) M ccc F E A A (FLANGE) T SEATING PLANE CASE 465–06 ISSUE F NI–780 MRF187 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE 4X U (FLANGE) B 1 4X Z (LID) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 --0.040 --0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --1.02 --0.76 0.127 REF 0.254 REF 0.381 REF B (FLANGE) 2 2X K D bbb M TA M B M N (LID) R M (LID) ccc M H 3 TA M B M ccc aaa M TA TA M B B M (INSULATOR) S M (INSULATOR) M bbb C M TA B M M M F T SEATING PLANE E A A (FLANGE) CASE 465A–06 ISSUE F NI–780S MRF187SR3 STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MOTOROLA RF DEVICE DATA MRF187 MRF187R3 MRF187SR3 7 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. 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All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T. Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF187 MRF187R3 MRF187SR3 8 ◊ MOTOROLA RF DEVICE DATA MRF187/D