MRF19030

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19030/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. • CDMA Performance @ 1990 MHz, 26 Volts IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13 885 kHz — –47 dBc @ 30 kHz BW 1.25 MHz — –55 dBc @ 12.5 kHz BW 2.25 MHz — –55 dBc @ 1 MHz BW Output Power — 4.5 Watts Avg. Power Gain — 13.5 dB Efficiency — 17% • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 26 Vdc, 1.93 GHz, 30 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters • In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel. MRF19030R3 MRF19030SR3 2.0 GHz, 30 W, 26 V LATERAL N–CHANNEL RF POWER MOSFETs CASE 465E–03, STYLE 1 NI–400 MRF19030R3 CASE 465F–03, STYLE 1 NI–400S MRF19030SR3 MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 –0.5, +15 83.3 0.48 –65 to +200 200 Unit Vdc Vdc Watts W/°C °C °C ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 2 (Minimum) M3 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 2.1 Unit °C/W NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 7 MOTOROLA RF  Motorola, Inc. 2002 DEVICE DATA MRF19030R3 MRF19030SR3 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0 Vdc, ID = 20 µA) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate–Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 µAdc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 300 mA) Drain–Source On–Voltage (VGS = 10 Vdc, ID = 1 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 1 Adc) DYNAMIC CHARACTERISTICS Input Capacitance (Including Input Matching Capacitor in Package) (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Output Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) Two–Tone Common–Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1960.0 MHz, f2 = 1960.1 MHz) Two–Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1960.0 MHz, f2 = 1960.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1960.0 MHz, f2 = 1960.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1960.0 MHz, f2 = 1960.1 MHz) Two–Tone Common–Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz) Two–Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 300 mA, f = 1930 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) (1) Part is internally matched both on input and output. Gps — 13 — dB Ciss Coss Crss — — — 98.5 37 1.3 — — — pF pF pF VGS(th) VGS(Q) VDS(on) gfs 2 2 — — 3 3.3 0.29 2 4 4.5 0.4 — Vdc Vdc Vdc S V(BR)DSS IDSS IGSS 65 — — — — — — 1 1 Vdc µAdc µAdc Symbol Min Typ Max Unit η — 36 — % IMD — –31 — dBc IRL — –13 — dB Gps 12 13 — dB η 33 36 — % IMD — –31 –28 dBc IRL — –13 –9 dB Ψ No Degradation In Output Power Before and After Test MRF19030R3 MRF19030SR3 2 MOTOROLA RF DEVICE DATA VGG + C2 B1 B2 R3 B3 B4 B5 VDD + C8 R1 R2 C3 C4 R4 + C6 C9 R5 C5 R6 R7 L2 L3 RF OUTPUT Z6 RF INPUT Z5 DUT Z7 Z8 C7 C10 Z9 L4 Z10 Z1 L1 Z2 C1 Z3 Z4 B1 – B5 C1, C7 C2, C8 C3, C5 C4, C6 C9 C10 L1 – L4 R1 – R7 Z1 Z2 Short Ferrite Beads 10 pF Chip Capacitors, B Case 470 µF, 35 V Electrolytic Capacitors 0.1 µF Chip Capacitors, B Case 5.1 pF Chip Capacitors, B Case 22 µF Tantalum Chip Capacitor 0.4 – 2.5 pF Variable Capacitor, Johanson Gigatrim 12.5 nH Inductors 12 Ω Chip Resistors (0805) 0.080″ x 0.595″ Microstrip 0.080″ x 0.600″ Microstrip Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Substrate 0.080″ x 0.480″ Microstrip 0.325″ x 0.280″ Microstrip 0.510″ x 0.200″ Microstrip 0.510″ x 0.200″ Microstrip 0.325″ x 0.280″ Microstrip 0.080″ x 0.480″ Microstrip 0.080″ x 0.530″ Microstrip 0.080″ x 0.671″ Microstrip 0.030″ x 3.00″ x 5.00″ Glass Teflon, Arlon Figure 1. MRF19030 Test Circuit Schematic C2 C3 R1 B1 B2 R2 R3 R4 L2 C1 C4 B3 R5 C9 L3 C6 C7 L4 C5 C8 R6 B4 R7 B5 L1 C10 MRF19030 Rev. 0 Figure 2. MRF19030 Test Circuit Component Layout MOTOROLA RF DEVICE DATA MRF19030R3 MRF19030SR3 3 TYPICAL CHARACTERISTICS η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) 50 40 30 20 10 0 1900 IRL η VDD = 26 Vdc IDQ = 300 mA, Pout = 30 W (PEP) Two-Tone Measurement, 100 kHz Tone Spacing Gps IMD 1920 1960 1980 1940 f, FREQUENCY (MHz) 2000 -30 -35 2020 -20 -25 -10 -15 45 40 ADJACENT CHANNEL POWER RATION (dB) IMD, INTERMODULATION DISTORTION (dBc) VDD = 26 Vdc IDQ = 350 mA, f = 1960 MHz, Channel Spacing (Channel Bandwidth): 885 kHz (30 kHz), 1.25 MHz (12.5 kHz), 2.25 MHz (1 MHz) -20 -30 -40 -50 η -60 -70 Gps CDMA 9 Channels Forward PILOT:0, PAGING:1, TRAFFIC:8-13, SYNC:32 0 8 10 2 6 4 Pout, OUTPUT POWER (WATTS Avg.) CDMA -80 -90 35 30 2.25 MHz 25 885 kHz 15 10 5 20 1.25 MHz -100 12 Figure 3. Class AB Broadband Circuit Performance Figure 4. CDMA ACPR, Power Gain and Drain Efficiency versus Output Power -25 IMD, INTERMODULATION DISTORTION (dBc) -30 -35 -40 -45 -50 IMD, INTERMODULATION DISTORTION (dBc) VDD = 26 Vdc, f = 1960 MHz Two-Tone Measurement, 100 kHz Tone Spacing 200 mA 300 mA 400 mA 350 mA 300 mA -20 -30 -40 -50 -60 -70 -80 1.0 VDD = 26 Vdc, IDQ = 300 mA, f = 1960 MHz Two-Tone Measurement, 100 kHz Tone Spacing 3rd Order 5th Order 7th Order -55 1.0 10 Pout, OUTPUT POWER (WATTS) PEP 100 10 Pout, OUTPUT POWER (WATTS) PEP 100 Figure 5. Intermodulation Distortion versus Output Power 15 14 Figure 6. Intermodulation Distortion Products versus Output Power -22 -24 -26 -28 -30 -32 -34 -36 100 12 20 22 24 26 28 30 32 -38 34 G ps , POWER GAIN (dB) G ps , POWER GAIN (dB) 14 400 mA 350 mA 300 mA 300 mA 13.5 f = 1960 MHz IDQ = 300 mA, Pout = 30 W (PEP) Two-Tone Measurement, 100 kHz Tone Spacing Gps 13 13 IMD 12 200 mA VDD = 26 Vdc, f = 1960 MHz Two-Tone Measurement, 100 kHz Tone Spacing 12.5 11 1.0 10 Pout, OUTPUT POWER (WATTS) PEP VDD, DRAIN VOLTAGE (VOLTS) Figure 7. Power Gain versus Output Power Figure 8. Power Gain and Intermodulation Distortion versus Supply Voltage MRF19030R3 MRF19030SR3 4 MOTOROLA RF DEVICE DATA Zo = 25 Ω ZOL* f = 1930 MHz f = 1990 MHz Zin f = 1930 MHz f = 1990 MHz VDD = 26 V, IDQ = 300 mA, Pout = 30 W PEP f MHz 1930 1960 1990 Zin Zin Ω 10.57 + j7.69 10.54 + j7.43 10.47 + j7.21 ZOL* Ω 5.81 + j5.01 5.84 + j4.67 5.84 + j4.35 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. Note: ZOL* was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion. Input Matching Network Device Under Test Output Matching Network Z in Z * OL Figure 9. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA MRF19030R3 MRF19030SR3 5 NOTES MRF19030R3 MRF19030SR3 6 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS 2X G B 1 2X K 2 2X D bbb N (LID) ccc M M Q M bbb TB M A M NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX .795 .805 .380 .390 .125 .163 .275 .285 .035 .045 .003 .006 .600 BSC .057 .067 .092 .122 .395 .405 .395 .405 .110 .130 .395 .405 .395 .405 .005 BSC .010 BSC .015 BSC MILLIMETERS MIN MAX 20.19 20.44 9.65 9.9 3.17 4.14 6.98 7.24 0.89 1.14 0.07 0.15 15.24 BSC 1.45 1.7 2.33 3.1 10 10.3 10 10.3 2.79 3.3 10 10.3 10 10.3 0.127 BSC 0.254 BSC 0.381 BSC 3 B TA M B M TA M B E M ccc C M TA M B M R (LID) F aaa M TA M B M M (INSULATOR) A T SEATING PLANE S (INSULATOR) aaa M H B M TA M STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE A CASE 465E–03 ISSUE D NI–400 MRF19030R3 2X D bbb M T A 1 M B M NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX .395 .405 .395 .405 .125 .163 .275 .285 .035 .045 .003 .006 .057 .067 .092 .122 .395 .405 .395 .405 .395 .405 .395 .405 .005 REF .010 REF .015 REF MILLIMETERS MIN MAX 10.03 10.29 10.03 10.29 3.18 4.14 6.98 7.24 0.89 1.14 0.08 0.15 1.45 1.70 2.34 3.10 10.03 10.29 10.03 10.29 10.03 10.29 10.03 10.29 0.127 REF 0.254 REF 0.38 REF 2 2X K R C 3 (LID) ccc E M TA M B M ccc M TA M B M N (LID) F A A (FLANGE) T M SEATING PLANE H S (INSULATOR) aaa B (FLANGE) M TA M B M (INSULATOR) STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE B aaa M TA M B M CASE 465F–03 ISSUE B NI–400S MRF19030SR3 MOTOROLA RF DEVICE DATA MRF19030R3 MRF19030SR3 7 Motorola reserves the right to make changes without further notice to any products herein. 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MOTOROLA and the logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF19030R3 MRF19030SR3 8 ◊ MOTOROLA RF DEVICE MRF19030/D DATA