MRF19090S

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19090/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class AB PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM, and multicarrier amplifier applications. • Typical CDMA Performance: 1990 MHz, 26 Volts IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power — 9 Watts Power Gain — 10 dB Adjacent Channel Power — 885 kHz: –47 dBc @ 30 kHz BW 1.25 MHz: –55 dBc @ 12.5 kHz BW 2.25 MHz: –55 dBc @ 1 MHz BW • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 26 Vdc, 1.93 GHz, 90 Watts (CW) Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters • Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF19090 MRF19090S MRF19090SR3 1990 MHz, 90 W, 26 V LATERAL N–CHANNEL RF POWER MOSFETs CASE 465B–03, STYLE 1 (NI–880) (MRF19090) CASE 465C–02, STYLE 1 (NI–880S) (MRF19090S) MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Total Device Dissipation @ TC > = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 +15, –0.5 270 1.54 –65 to +150 200 Unit Vdc Vdc Watts W/°C °C °C ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 1 (Minimum) M3 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.65 Unit °C/W NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 3 MOTOROLA RF  Motorola, Inc. 2002 DEVICE DATA MRF19090 MRF19090S MRF19090SR3 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 µA) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate–Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 µAdc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 750 mAdc) Drain–Source On–Voltage (VGS = 10 Vdc, ID = 1 Adc) DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture) Two–Tone Common–Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) Two–Tone Drain Efficiency (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) Input Return Loss (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) Pout, 1 dB Compression Point (VDD = 26 Vdc, Pout = 90 W CW, f = 1990 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 750 mA, f = 1930 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) (1) Part is internally matched both on input and output. Gps 10 11.5 — dB Crss — 4.2 — pF gfs VGS(th) VGS(Q) VDS(on) — 2.0 2.5 — 7.2 — 3.8 0.10 — 4.0 4.5 — S Vdc Vdc Vdc V(BR)DSS IDSS IGSS 65 — — — — — — 10 1 Vdc µAdc µAdc Symbol Min Typ Max Unit η 33 35 — % IMD — –30 –28 dBc IRL — –12 — dB P1dB Ψ — 90 — W No Degradation In Output Power Before and After Test MRF19090 MRF19090S MRF19090SR3 2 MOTOROLA RF DEVICE DATA VGG + B1 + C13 + C14 + C19 C9 B3 B4 + + C16 + C17 B2 VDD + C10 C8 C7 C5 C6 C11 C12 C15 L1 R1 L2 RF INPUT Z1 Z2 C2 C1 Z3 Z4 R2 Z5 DUT Z6 Z7 C3 C4 Z8 Z9 RF OUTPUT C18 B1, B2 B3, B34 C1, C18 C2, C5, C8 C3 C4 C6, C7 C9, C12 C10, C11 C13, C17 C14, C16 C15, C19 2 Ferrite Beads, Round, Ferroxcube #56–590–65–3B Ferrite Beads, Surface Mount, Ferroxcube 0.4 – 2.5 pF Variable Capacitors, Johanson Gigatrim #27285 10 pF Chip Capacitors, B Case, ATC #100B100CCA500X 12 pF Chip Capacitor, B Case, ATC #100B120CCA500X 0.3 pF Chip Capacitor, B Case, ATC #100B0R3CCA500X 120 pF Chip Capacitors, B Case, ATC #100B12R1CCA500X 0.1 µF Chip Capacitors, Kemet #CDR33BX104AKWS 1000 pF Chip Capacitors, B Case, ATC #100B102JCA50X 22 µF, 35 V Tantalum Chip Capacitors, Kemet #T491X226K035AS4394 10 µF, 35 V Tantalum Chip Capacitors, Kemet #T495X106K035AS4394 1 µF, 35 V Tantalum Chip Capacitors, Kemet #T495X105K035AS4394 L1, L2 8 Turns, #26 AWG, 0.085″ OD, 0.330″ Long, Copper Wire R1, R2 270 Ω, 1/4 W Chip Resistors, Garrett Instruments #RM73B2B271JT Z1 ZO = 50 Ohms Z2 ZO = 50 Ohms, Lambda = 0.123 Z3 ZO = 15.24 Ohms, Lambda = 0.0762 Z4 ZO = 10.11 Ohms, Lambda = 0.0392 Z5 ZO = 6.34 Ohms, Lambda = 0.0711 Z6 ZO = 5.02 Ohms, Lambda = 0.0476 Z7 ZO = 5.54 Ohms, Lambda = 0.0972 Z8 ZO = 50.0 Ohms, Lambda = 0.194 Z9 ZO = 50.0 Ohms Raw PCB Material 0.030″ Glass Teflon, εr = 2.55, 2 oz Copper, 3″ x 5″ Dimensions Figure 1. MRF19090 Test Circuit Schematic MOTOROLA RF DEVICE DATA MRF19090 MRF19090S MRF19090SR3 3 C9 RFB1 C19 C13 C14 C10 RFB2 RFB3 C11 C12 RFB4 C6 C5 C7 C8 L2 C15 C16 C17 L1 R1 C2 C1 R2 CUTOUT C3 C4 C18 0.14λ 0.212λ MRF19090 Figure 2. MRF19090 Test Circuit Component Layout MRF19090 MRF19090S MRF19090SR3 4 MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 40 η 35 30 25 20 IMD 15 Gps 10 1900 1920 1960 1980 1940 f, FREQUENCY (MHz) 2000 -35 2020 VDD = 26 Vdc Pout = 90 W (PEP) IDQ = 750 mA 100 kHz Tone Spacing IRL -15 -20 -25 -30 -10 IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) ADJACENT CHANNEL POWER RATIO (dB) IMD, INTERMODULATION DISTORTION (dBc) 35 30 25 20 1.25 MHz 15 10 η -30 VDD = 26 Vdc, IDQ = 1.1 A, f = 1960 MHz, Channel Spacing (Channel Bandwidth): 885 kHz (30 kHz), 1.25 MHz (12.5 kHz), 2.25 MHz (1 MHz) 885 kHz 2.25 MHz 9 Channel Forward Pilot:0, Paging:1, Traffic:8-13, Sync:32 Gps 0 5 15 10 20 25 Pout, OUTPUT POWER (WATTS (Avg.)) 30 -80 35 -60 -70 -40 -50 Figure 3. Class AB Performance versus Frequency Figure 4. CDMA Performance ACPR, Gain and Drain Efficiency versus Output Power -20 IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) -25 -30 -35 -40 -45 -50 -55 1 950 mA 750 mA VDD = 26 Vdc f = 1960 MHz 100 kHz Tone Spacing 550 mA -20 -30 -40 VDD = 26 Vdc IDQ = 750 mA f = 1960 MHz 100 kHz Tone Spacing 3rd Order -50 -60 -70 5th Order 7th Order 10 Pout, OUTPUT POWER (WATTS) PEP 100 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 Figure 5. Third Order Intermodulation Distortion versus Output Power 13 12.5 G ps , POWER GAIN (dB) 12 750 mA 550 mA VDD = 26 Vdc f = 1960 MHz 100 kHz Tone Spacing 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 G ps , POWER GAIN (dB) 950 mA 12 12.5 Figure 6. Intermodulation Products versus Output Power -22 -24 -26 -28 -30 IMD 11 -32 -34 -36 10.5 22 24 26 28 30 -38 32 Pout = 90 W (PEP) IDQ = 750 mA, f = 1960 MHz 100 kHz Tone Spacing Gps 11.5 11 11.5 10.5 10 VDD, DRAIN VOLTAGE (VOLTS) Figure 7. Power Gain versus Output Power Figure 8. Third Order Intermodulation Distortion and Gain versus Supply Voltage MOTOROLA RF DEVICE DATA MRF19090 MRF19090S MRF19090SR3 5 ZOL* f = 1930 MHz 1990 MHz 1990 MHz Zin f = 1930 MHz Zo = 10 Ω VDD = 26 V, IDQ = 750 mA, Pout = 90 Watts (PEP) f MHz 1930 1960 1990 Zin Ω 4.5 + j6.1 4.4 + j6.0 4.3 + j6.1 ZOL* Ω 1.1 + j4.5 1.1 + j4.4 1.1 + j4.3 Zin = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. Note: ZOL* was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion. Input Matching Network Device Under Test Output Matching Network Z in Z * OL Figure 9. Series Equivalent Input and Output Impedance MRF19090 MRF19090S MRF19090SR3 6 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS B G 4 1 2X Q bbb M TA M B M B (FLANGE) 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.16 (29.57) BASED ON M3 SCREW. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.175 0.205 0.872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 13.6 13.8 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.44 5.21 22.15 22.55 19.30 22.60 3.00 3.51 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF K D TA 2 bbb M M B M M bbb ccc H M (INSULATOR) R ccc M (LID) M (INSULATOR) M TA TA M B B M TA TA M B S B N M M M (LID) aaa C M M F E A A (FLANGE) T SEATING PLANE STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465B–03 ISSUE C (NI–880) (MRF19090) B 1 B (FLANGE) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX 0.905 0.915 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 22.99 23.24 13.60 13.80 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF K D TA 2 bbb M M B M (INSULATOR) M bbb ccc H C M R ccc M (LID) M (INSULATOR) M TA TA M B B M TA TA M B S B N M M M (LID) aaa M M F E A A (FLANGE) STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE T SEATING PLANE CASE 465C–02 ISSUE A (NI–880S) (MRF19090S) MOTOROLA RF DEVICE DATA MRF19090 MRF19090S MRF19090SR3 7 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer ’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. 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MOTOROLA and the logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF19090 MRF19090S MRF19090SR3 ◊ 8 MOTOROLA RF DEVICE MRF19090/D DATA