MRF21125SR3

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF21125/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2–carrier W–CDMA Performance for VDD = 28 Volts, IDQ = 1600 mA, f1 = 2.1125 GHz, f2 = 2.1225 GHz, Channel bandwidth = 3.84 MHz, adjacent channels at ± 5 MHz , ACPR and IM3 measured in 3.84 MHz bandwidth. Peak/Avg = 8.5 dB @ 0.01% probability on CCDF. Output Power — 20 Watts Efficiency — 18% Gain — 13 dB IM3 — –43 dBc ACPR — –45 dBc • 100% Tested under 2–carrier W–CDMA • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 125 Watts (CW) Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters • Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF21125 MRF21125S MRF21125SR3 2170 MHz, 125 W, 28 V LATERAL N–CHANNEL RF POWER MOSFETs CASE 465B–03, STYLE 1 (NI–880) (MRF21125) CASE 465C–02, STYLE 1 (NI–880S) (MRF21125S) MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 +15, –0.5 330 1.89 –65 to +150 200 Unit Vdc Vdc Watts W/°C °C °C ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 2 (Minimum) M3 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.53 Unit °C/W NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 5 MOTOROLA RF  Motorola, Inc. 2002 DEVICE DATA MRF21125 MRF21125S MRF21125SR3 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 µAdc) Gate–Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) ON CHARACTERISTICS Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) Gate Threshold Voltage (VDS = 10 V, ID = 300 µA) Gate Quiescent Voltage (VDS = 28 V, ID = 1300 mA) Drain–Source On–Voltage (VGS = 10 V, ID = 1 A) DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Crss — 5.4 — pF gfs VGS(th) VGS(Q) VDS(on) — 2 2.5 — 10.8 — 3.9 0.12 — 4 4.5 — S Vdc Vdc Vdc V(BR)DSS IGSS IDSS 65 — — — — — — 1 10 Vdc µAdc µAdc Symbol Min Typ Max Unit FUNCTIONAL TESTS (In Motorola Test Fixture) 2–carrier W–CDMA, 3.84 MHz Channel Bandwidth, IM3 measured in 3.84 MHz Bandwidth. Peak/Avg = 8.5 dB @ 0.01% probability on CCDF. Common–Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 20 W Avg, 2–carrier W–CDMA, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 20 W Avg, 2–carrier W–CDMA, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 20 W Avg, 2–carrier W–CDMA, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3 measured at f1 –15 MHz and f2 +15 MHz referenced to carrier channel power.) Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 20 W Avg, 2–carrier W–CDMA, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR measured at f1 –10 MHz and f2 +10 MHz referenced to carrier channel power.) Input Return Loss (VDD = 28 Vdc, Pout = 20 W Avg, 2–carrier W–CDMA, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Output Mismatch Stress (VDD = 28 Vdc, Pout = 125 W CW, IDQ = 1600 mA, f = 2170 MHz, VSWR = 5:1, All Phase Angles at Frequency of Test) (1) Part is internally matched both on input and output. Gps 12 13 — dB η 17 18 — % IM3 — –43 –40 dBc ACPR — –45 –40 dBc IRL — –12 –9.0 dB Ψ No Degradation In Output Power Before and After Test MRF21125 MRF21125S MRF21125SR3 2 MOTOROLA RF DEVICE DATA ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Characteristic TYPICAL TWO–TONE PERFORMANCE (In Motorola Test Fixture) Common–Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 125 W PEP, IDQ = 1600 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 125 W PEP, IDQ = 1600 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Intermodulation Distortion (VDD = 28 Vdc, Pout = 125 W PEP, IDQ = 1600 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) TYPICAL CW PERFORMANCE Common–Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 125 W CW, IDQ = 1600 mA, f1 = 2170.0 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 125 W CW, IDQ = 1600 mA, f = 2170.0 MHz) Gps η — — 11.5 46 — — dB % Gps — 12 — dB Symbol Min Typ Max Unit η — 34 — % IMD — –30 — dBc MOTOROLA RF DEVICE DATA MRF21125 MRF21125S MRF21125SR3 3 B1 VGG + R4 W1 C5 Z6 Z7 RF OUTPUT C6 C7 C8 C9 C10 + C11 + C12 C13 VDD + C14 R1 R2 + C2 C3 + C4 R3 RF INPUT Z1 C1 Z2 Z3 Z4 Z5 DUT Z8 Z9 Z10 Z11 Z12 C15 Z13 C16 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 1.212″ x 0.082″ Microstrip 0.236″ x 0.082″ Microstrip 0.086″ x 0.254″ Microstrip 0.357″ x 0.082″ Microstrip 0.274″ x 1.030″ Microstrip 0.466″ x 0.050″ Microstrip 0.501″ x 0.050″ Microstrip 0.600″ x 1.056″ Microstrip Z9 Z10 Z11 Z12 Z13 Raw Board Material 0.179″ x 0.219″ Microstrip 0.100″ x 0.336″ Microstrip 0.534″ x 0.142″ Microstrip 0.089″ x 0.080″ Microstrip 0.620″ x 0.080″ Microstrip 0.030″ Glass Teflon, 2 oz Copper, 3″ x 5″ Dimensions, Arlon GX0300–55–22, εr = 2.55 Figure 1. MRF21125 Test Circuit Schematic Table 1. MRF21125 Test Circuit Component Designations and Values Designators B1 C1 C2, C4, C11, C12 C3, C7 C5, C14 C6 C8 C9 C10 C13 C15 C16 R1 R2 R3 R4 W1 Description Ferrite Bead (Square), Fair Rite #2743019447 9.1 pF Chip Capacitor, B Case, ATC #100B9R1CCA500X 22 µF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet #T491X226K035AS4394 20000 pF Chip Capacitors, B Case, ATC #100B203JCA50X 5.1 pF Chip Capacitors, B Case, ATC #100B5R1CCA500X 100000 pF Chip Capacitor, B Case, ATC #100B104JCA50X 10000 pF Chip Capacitor, B Case, ATC #100B103JCA50X 7.5 pF Chip Capacitor, B Case, ATC #100B7R5CCA500X 1.2 pF Chip Capacitor, B Case, ATC #100B1R2CCA500X 0.1 µF Chip Capacitor, Kemet #CDR33BX104AKWS 16 pF Chip Capacitor, B Case, ATC #100B160KP500X 0.6 – 4.5 pF Variable Capacitor, Johanson Gigatrim #27271SL 1.0 kΩ, 1/8 W Chip Resistor 560 kΩ, 1/8 W Chip Resistor 4.7 Ω, 1/8 W Chip Resistor 12 Ω, 1/8 W Chip Resistor Solid Copper Buss Wire, 16 AWG MRF21125 MRF21125S MRF21125SR3 4 MOTOROLA RF DEVICE DATA VGG C11 V DD C9 C10 B1 R2 C2 C3 C4 R1 R3 C5 C8 R4 C7 C6 C12 W1 C13 C14 C15 C1 C16 MRF21125 Rev 5 Figure 2. MRF21125 Test Circuit Component Layout MOTOROLA RF DEVICE DATA MRF21125 MRF21125S MRF21125SR3 5 TYPICAL CHARACTERISTICS η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) -20 -30 -40 -50 -60 (dB) -70 -80 -90 -100 -110 -120 f, FREQUENCY (MHz) -ACPR @ +ACPR @ 3.84 MHz BW 3.84 MHz BW -IM3 @ 3.84 MHz BW +IM3 @ 3.84 MHz BW 3.84 MHz Channel BW 30 VDD = 28 Vdc, IDQ = 1600 mA, f1 = 2.1125 GHz, f2 = 2.1225 GHz 25 Channel Spacing (Channel Bandwidth): 10 MHz @ 3.84 MHz BW Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF) 20 η Gps 15 10 5 0 -5 4 IM3 ACPR -20 -25 ± IM3 (dBc), ± ACPR (dBc) -30 -35 -40 -45 -50 -55 32 -60 -10 8 16 12 20 28 24 Pout, OUTPUT POWER (WATTS, AVG. (W-CDMA)) Figure 3. 2 Carrier (10 MHz spacing) W–CDMA Spectrum Figure 4. 2 Carrier W–CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 50 40 35 30 25 20 15 10 5 0 2080 2100 2120 2160 2140 f, FREQUENCY (MHz) 2180 η 0 -5 -10 -15 -20 Gps -25 -30 -35 -40 2200 160 Pout , OUTPUT POWER (WATTS) 144 128 112 96 80 64 48 32 16 0 VDD = 28 Vdc IDQ = 1600 mA f = 2120 MHz Pout η P3dB = 156 W 46 42 38 34 30 26 22 18 P1dB = 135 W VDD = 28 Vdc Pout = 125 W (PEP) IDQ = 1600 mA Two-Tone Measurement, 10 MHz Tone Spacing IRL Gps 14 10 6 16 IMD 0 2 4 6 8 10 12 Pin, INPUT POWER (WATTS) 14 Figure 5. CW Performance Figure 6. Broadband Linearity Performance IMD, INTERMODULATION DISTORTION (dBc) -25 -30 -35 -40 -45 -50 -55 -60 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 1600 mA 1300 mA 2000 mA 1000 mA VDD = 28 Vdc f1 = 2.1125 GHz, f2 = 2.1225 GHz Two-Tone Measurement, 10 MHz Tone Spacing G ps , POWER GAIN (dB) 14 2000 mA 1600 mA 1300 mA 1000 mA 13 12 11 VDD = 28 Vdc f1 = 2.1125 GHz, f2 = 2.1225 GHz Two-Tone Measurement, 10 MHz Tone Spacing 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 10 Figure 7. Intermodulation Distortion versus Output Power Figure 8. Power Gain versus Output Power MRF21125 MRF21125S MRF21125SR3 6 MOTOROLA RF DEVICE DATA IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) 176 f = 2110 MHz Zin 2170 MHz VDD = 28 V, IDQ = 1600 mA, Pout = 20 W (Avg.), 2-Carrier W-CDMA f MHz Zo = 10 Ω 2110 2140 2170 f = 2110 MHz ZOL* 2170 MHz Zin Zin Ω 3.81 + j6.86 4.33 + j7.90 4.84 + j8.46 ZOL* Ω 1.56 – j1.58 1.53 – j1.90 1.48 – j2.26 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. Note 1: ZOL* was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion. Note 2: Measurements were taken on the MRF21125 test circuit with SMA Launchers. Input Matching Network Device Under Test Output Matching Network Z in Z * OL Figure 9. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA MRF21125 MRF21125S MRF21125SR3 7 NOTES MRF21125 MRF21125S MRF21125SR3 8 MOTOROLA RF DEVICE DATA NOTES MOTOROLA RF DEVICE DATA MRF21125 MRF21125S MRF21125SR3 9 NOTES MRF21125 MRF21125S MRF21125SR3 10 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS B G 4 1 2X Q bbb M TA M B M B (FLANGE) 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.16 (29.57) BASED ON M3 SCREW. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.175 0.205 0.872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 13.6 13.8 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.44 5.21 22.15 22.55 19.30 22.60 3.00 3.51 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF K D TA 2 bbb M M B M M bbb ccc H M (INSULATOR) R ccc M (LID) M (INSULATOR) M TA TA M B B M TA TA M B S B N M M M (LID) aaa M M C F E A A (FLANGE) T SEATING PLANE CASE 465B–03 ISSUE C (NI–880) (MRF21125) STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE B 1 B (FLANGE) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX 0.905 0.915 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 22.99 23.24 13.60 13.80 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF K D TA 2 bbb M M B M M (INSULATOR) R ccc M (LID) M (INSULATOR) M bbb ccc H M TA TA M B B M TA TA M B S B N M M M (LID) aaa M M C F E A A (FLANGE) STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE T SEATING PLANE CASE 465C–02 ISSUE A (NI–880S) (MRF21125S) MOTOROLA RF DEVICE DATA MRF21125 MRF21125S MRF21125SR3 11 Motorola reserves the right to make changes without further notice to any products herein. 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MOTOROLA and the logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF21125 MRF21125S MRF21125SR3 ◊ 12 MOTOROLA RF DEVICE MRF21125/D DATA