MRF21180

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF21180/D The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. • Typical 2 - carrier W - CDMA Performance for VDD = 28 Volts, IDQ = 2 x 850 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 - 5 MHz and f2 + 5 MHz. Distortion Products Measured over a 3.84 MHz BW @ f1 - 10 MHz and f2 + 10 MHz, Each Carrier Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF. Output Power — 38 Watts (Avg.) Power Gain — 12.1 dB Efficiency — 22% IM3 — 37.5 dBc ACPR — - 41 dBc • Internally Input and Output Matched, for Ease of Use • High Gain, High Efficiency, and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 5:1 VSWR, @ 28 Vdc, 2110 MHz, 170 Watts (CW) Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. N - Channel Enhancement - Mode Lateral MOSFET MRF21180R6 2170 MHz, 170 W, 28 V LATERAL N - CHANNEL RF POWER MOSFET Freescale Semiconductor, Inc... CASE 375D - 04, STYLE 1 NI - 1230 MAXIMUM RATINGS Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 - 0.5, +15 380 2.17 - 65 to +150 200 Unit Vdc Vdc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value (1) 0.46 Unit °C/W ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 1 (Minimum) M3 (Minimum) (1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf. Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 4 MOTOROLA RF  Motorola, Inc. 2004 DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF21180R6 1 Freescale Semiconductor, Inc. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS (1) Drain- Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 µAdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 µAdc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 850 mAdc) VGS(th) VGS(Q) VDS(on) gfs 2 3 — — — 3.9 0.18 6 4 5 0.22 — Vdc Vdc Vdc S V(BR)DSS IDSS IGSS 65 — — — — — — 10 1 Vdc µAdc µAdc Symbol Min Typ Max Unit Freescale Semiconductor, Inc... Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Crss — 3.6 — pF FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) 2 - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. Each carrier has Peak/Avg. ratio = 8.3 dB @ 0.01% Probability on CCDF. Common- Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 850 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 850 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 850 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3 measured over 3.84 MHz BW @ f1 - 10 MHz and f2 +10 MHz) Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 850 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR measured over 3.84 MHz BW @ f1 - 5 MHz and f2 +5 MHz.) Input Return Loss (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 850 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Output Mismatch Stress (VDD = 28 Vdc, Pout = 170 W CW, IDQ = 2 x 850 mA, f = 2170 MHz VSWR = 5:1, All Phase Angles at Frequency of Tests) Gps 11 12.1 — dB η 19 22 — % IM3 — - 37.5 - 35 dBc ACPR — - 41 - 39 dBc IRL — - 12 -9 dB Ψ No Degradation In Output Power Before and After Test (1) Each side of device measured separately. Part is internally matched both on input and output. (2) Measurements made with device in push - pull configuration. (continued) MRF21180R6 2 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Characteristic Two - Tone Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 170 W, IDQ = 2 x 850 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Two - Tone Drain Efficiency (VDD = 28 Vdc, Pout = 170 W, IDQ = 2 x 850 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Two - Tone Intermodulation Distortion (VDD = 28 Vdc, Pout = 170 W, IDQ = 2 x 850 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Two - Tone Input Return Loss (VDD = 28 Vdc, Pout = 170 W, IDQ = 2 x 850 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Symbol Gps Min — Typ 12 Max — Unit dB FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) (continued) η — 33 — % IMD — - 30 — dBc IRL — - 12 — dB Freescale Semiconductor, Inc... Pout, 1 dB Compression Point (VDD = 28 Vdc, IDQ = 2 x 850 mA, f = 2170 MHz) (2) Measurements made with device in push - pull configuration. P1dB — 180 — W MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF21180R6 3 Freescale Semiconductor, Inc. VGG R1 + C23 C15 C11 C5 Z9 Z11 Z15 C4 Z17 R3 + B1 Z13 C8 C9 C14 C18 + C19 + C21 VDD RF INPUT Z1 Z2 Z3 C1 Z5 Z7 R5 DUT Z19 Z20 RF OUTPUT Z4 C2 Z6 Z8 VGG R4 B2 Z10 Z12 Z16 C3 Z18 Freescale Semiconductor, Inc... R2 + C24 C16 Z14 VDD + C7 C10 C13 C17 + C20 + C22 C12 C6 Figure 1. MRF21180 Test Circuit Schematic Table 1. MRF21180 Test Circuit Component Designations and Values Part B1, B2 C1, C2, C3, C4 C5, C6, C7, C8 C9, C10 C11, C12, C13, C14 C15, C16, C17, C18 C19, C20 C21, C22, C23, C24 N1, N2 R1, R2, R3, R4 R5 Z1, Z20 Z2, Z19 Z3, Z18 Z4, Z17 Z5, Z6 Z7, Z8 Z9, Z10 Z11, Z12 Z13, Z14 Z15, Z16 WB1, WB2, WB3, WB4 Board PCB Description Short Ferrite Beads 30 pF Chip Capacitors 5.6 pF Chip Capacitors 10 µF Tantalum Capacitors 1000 pF Chip Capacitors 0.1 µF Chip Capacitors 1.0 µF Tantalum Capacitors 22 µF Tantalum Capacitors Type N Flange Mounts 10 Ω, 1/8 W Chip Resistors 1.0 kΩ, 1/8 W Chip Resistor Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Wear Blocks 0.030″ Glass Teflon Etched Circuit Boards RF-35, εr = 3.50 MRF21180 Rev. 4 Taconic CMR 0.790″ x 0.065″ 0.830″ x 0.112″ 0.145″ x 0.065″ 1.700″ x 0.065″ 0.340″ x 0.065″ 0.455″ x 0.600″ 0.980″ x 0.035″ 0.510″ x 0.645″ 0.770″ x 0.058″ 0.280″ x 0.065″ Value, P/N or DWG 2743019447 100B300JCA500X 100B5R6JCA500X T495X106K035AS4394 100B102JCA500X CDR33BX104AKWS T491C105M050 T491X226K035AS4394 3052-1648-10 Manufacturer Fair Rite ATC ATC Kemet ATC Kemet Kemet Kemet Omni Spectra MRF21180R6 4 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. C19 C14 R4 C15C11 B1 R3 C5 C8 C10 C22 C18 C21 C1 R5 WB4 WB3 C4 C2 C3 WB1 WB2 Freescale Semiconductor, Inc... C23 C6 B1 R1 C20 C16 C12 R2 C17 C13 C7 C9 MRF21180 Rev. 4 C24 Figure 2. MRF21180 Test Circuit Component Layout MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF21180R6 5 Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 30 25 20 15 Gps 10 IM3 5 0 1 ACPR η 10 Pout, OUTPUT POWER (WATTS Avg.) W−CDMA 50 −55 −60 −50 VDD = 28 Vdc, IDQ = 1700 mA f1 = 2135 MHz, f2 = 2145 MHz 3.84 MHz Channel Bandwidth Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF) −30 IMD, INTERMODULATION DISTORTION (dBc) −35 −40 −45 IM3 (dBc), ACPR (dBc) −25 −30 −35 −40 −45 −50 −55 −60 −65 10 η 7th Order VDD = 28 Vdc, IDQ = 1700 mA f1 = 2135 MHz, f2 = 2145 MHz 100 Pout, OUTPUT POWER (WATTS) PEP 3rd Order 5th Order 15 10 5 220 45 40 η, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) IM3 (dBc), ACPR (dBc), IRL, INPUT RETURN LOSS (dB) 35 30 25 20 Freescale Semiconductor, Inc... Figure 3. 2-Carrier W-CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) −25 24 22 20 18 16 14 Figure 4. Intermodulation Distortion Products versus Output Power −9 η −14 −19 −24 −29 −34 IM3 12 10 2090 Gps ACPR 2110 2130 2150 2170 −39 −44 2190 IRL −30 −35 IDQ = 1300 mA −40 1500 mA 2100 mA 1900 mA −50 10 1700 mA VDD = 28 Vdc f1 = 2135 MHz f2 = 2145 MHz 100 Pout, OUTPUT POWER (WATTS) PEP 220 VDD = 28 Vdc, Pout = 38 W (Avg.) IDQ = 1700 mA f1 = f − 5 MHz, f2 = f + 5 MHz 2−Carrier W−CDMA, 10 MHz Carrier Spacing 3.84 MHz Channel Bandwidth Each Carrier Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF) −45 f, FREQUENCY (MHz) Figure 5. Intermodulation Distortion versus Output Power 12.5 12 G ps , POWER GAIN (dB) 11.5 11 Gps 48 40 η, DRAIN EFFICIENCY (%) η, DRAIN EFFICIENCY (%) 32 24 16 VDD = 28 Vdc IDQ = 1700 mA f = 2140 MHz 10 Pout, OUTPUT POWER (WATTS) 100 8 0 220 38 η 37 36 35 34 33 32 31 24 IMD Figure 6. 2 - Carrier W - CDMA Broadband Performance −25 −26 −27 −28 −29 −30 Pout = 170 W (PEP) IDQ = 1700 mA f1 = 2135 MHz, f2 = 2145 MHz 25 26 27 28 29 −31 −32 VDD, DRAIN SUPPLY (V) 10.5 10 9.5 1 η Figure 7. CW Performance Figure 8. Two - Tone Intermodulation Distortion and Drain Efficiency versus Drain Supply MRF21180R6 6 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS 12.5 G ps , POWER GAIN (dB) 12.25 12 11.75 11.5 11.25 11 10 IDQ = 2100 mA 1900 mA 1700 mA 1500 mA 1300 mA VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz 100 Pout, OUTPUT POWER (WATTS) PEP 220 Freescale Semiconductor, Inc... Figure 9. Two-Tone Power Gain versus Output Power G ps , POWER GAIN (dB),η, DRAIN EFFICIENCY (%) 35 η 30 IRL 25 VDD = 28 Vdc Pout = 170 W (PEP) IDQ (ICQ) = 1700 mA f1 = f − 5 MHz, f2 = f + 5 MHz −18 −13 −8 20 −23 15 IMD Gps 10 2090 −28 2110 2130 2150 2170 −33 2190 f, FREQUENCY (MHz) Figure 10. Two-Tone Broadband Performance IMD, INTERMODULATION DISTORTION (dBc) −25 −30 −35 −40 −45 −50 −55 0.1 1 Df, TONE SEPARATION (MHz) 10 20 3rd Order VDD = 28 Vdc Pout = 170 W (PEP) IDQ = 1700 mA f1 = 2140 MHz − Df/2, f2 = 2140 MHz + Df/2 5th Order 0 −10 −20 −30 (dB) −40 −50 7th Order −60 −70 −20 −IM3 @ 3.84 MHz BW −15 −10 −5 0 5 10 +IM3 @ 3.84 MHz BW 15 20 −ACPR @ 3.84 MHz BW +ACPR @ 3.84 MHz BW f1 3.84 MHz BW f2 3.84 MHz BW f, FREQUENCY (MHz) Figure 11. Intermodulation Distortion Products versus Two - Tone Spacing Figure 12. 2-Carrier W-CDMA Spectrum MOTOROLA RF DEVICE DATA IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) For More Information On This Product, Go to: www.freescale.com MRF21180R6 7 Freescale Semiconductor, Inc. f = 2170 MHz Zsource f = 2110 MHz f = 2170 MHz Zo = 5 Ω f = 2110 MHz Freescale Semiconductor, Inc... Zload VDD = 28 Vdc, IDQ = 2 X 850 mA, Pout = 38 W Avg. f MHz 2110 2140 2170 Zsource Ω 2.45 + j2.08 2.39 + j2.51 2.16 + j3.14 Zload Ω 2.65 + j1.52 2.71 + j1.80 2.64 + j2.04 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test − Output Matching Network − Z source Z + load Figure 13. Series Equivalent Input and Output Impedance MRF21180R6 8 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. NOTES Freescale Semiconductor, Inc... MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF21180R6 9 Freescale Semiconductor, Inc. NOTES Freescale Semiconductor, Inc... MRF21180R6 10 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. NOTES Freescale Semiconductor, Inc... MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF21180R6 11 Freescale Semiconductor, Inc. PACKAGE DIMENSIONS 2X Q bbb M A A G4 L 1 2 TA M B M B NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.52 (38.61) BASED ON M3 SCREW. DIM A B C D E F G H K L M N Q R S aaa bbb ccc INCHES MIN MAX 1.615 1.625 0.395 0.405 0.150 0.200 0.455 0.465 0.062 0.066 0.004 0.007 1.400 BSC 0.079 0.089 0.117 0.137 0.540 BSC 1.219 1.241 1.218 1.242 0.120 0.130 0.355 0.365 0.365 0.375 0.013 REF 0.010 REF 0.020 REF DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 41.02 41.28 10.03 10.29 3.81 5.08 11.56 11.81 1.57 1.68 0.10 0.18 35.56 BSC 2.01 2.26 2.97 3.48 13.72 BSC 30.96 31.52 30.94 31.55 3.05 3.30 9.01 9.27 9.27 9.53 0.33 REF 0.25 REF 0.51 REF 3 4X 4 K aaa M 4X (FLANGE) B D TA M B M ccc ccc M M TA (LID) M B M R TA N (LID) M B M Freescale Semiconductor, Inc... H C F E PIN 5 M (INSULATOR) bbb M (INSULATOR) S T SEATING PLANE bbb M TA M B M TA M B M CASE 375D - 04 ISSUE C NI - 1230 STYLE 1: PIN 1. 2. 3. 4. 5. Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2004 HOW TO REACH US: USA / EUROPE / LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3- 3440-3569 ASIA / PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MRF21180R6 12 ◊ For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE MRF21180/D DATA