MRF372D

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF372/D The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large–signal, common source amplifier applications in 32 volt transmitter equipment. • Typical Narrowband Two–Tone Performance @ f1 = 857 MHz, f2 = 863 MHz, 32 Volts Output Power — 180 Watts PEP Power Gain — 17 dB Efficiency — 36% IMD — –35 dBc • Typical Broadband Two–Tone Performance @ f1 = 857 MHz, f2 = 863 MHz, 32 Volts Output Power — 180 Watts PEP Power Gain — 14.5 dB Efficiency — 37% IMD — –31 dBc • Internally Matched, Controlled Q, for Ease of Use • Integrated ESD Protection • 100% Tested for Load Mismatch Stress at All Phase Angles with 3:1 VSWR @ 32 Vdc, f1 = 857 MHz, f2 = 863 MHz, 180 Watts PEP • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters MAXIMUM RATINGS (1) Rating Drain–Source Voltage Gate–Source Voltage Drain Current – Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS ID PD Tstg TJ MRF372 470 – 860 MHz, 180 W, 32 V LATERAL N–CHANNEL RF POWER MOSFET CASE 375G–04, STYLE 1 NI–860C3 Value 68 – 0.5, +15 17 350 2.0 – 65 to +150 200 Unit Vdc Vdc Adc W W/°C °C °C ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 1 (Minimum) M3 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) Each side of device measured separately. NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Symbol RθJC Max 0.5 Unit °C/W REV 5 MOTOROLA RF  Motorola, Inc. 2002 DEVICE DATA MRF372 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS (1) Drain–Source Breakdown Voltage (VGS = 0 Vdc, ID =10 µA) Zero Gate Voltage Drain Current (VDS = 32 Vdc, VGS = 0 Vdc) Gate–Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = 10 V, ID = 200 µA) Gate Quiescent Voltage (VDS = 32 V, ID = 100 mA) Drain–Source On–Voltage (VGS = 10 V, ID = 3 A) Forward Transconductance (VDS = 10 V, ID = 3 A) DYNAMIC CHARACTERISTICS (1) Input Capacitance (Includes Input Matching Capacitance) (VDS = 32 V, VGS = 0 V, f = 1 MHz) Output Capacitance (VDS = 32 V, VGS = 0 V, f = 1 MHz) Reverse Transfer Capacitance (VDS = 32 V, VGS = 0 V, f = 1 MHz) Ciss Coss Crss — — — 260 69 2.5 — — — pF pF pF VGS(th) VGS(Q) VDS(on) gfs 2 2.5 — — 3 3.5 0.28 2.6 4 4.5 0.45 — Vdc Vdc Vdc S V(BR)DSS IDSS IGSS 68 — — — — — — 10 1 Vdc µAdc µAdc Symbol Min Typ Max Unit FUNCTIONAL CHARACTERISTICS, NARROWBAND OPERATION (In Motorola MRF372 Narrowband Circuit, 50 ohm system) (2) Common Source Power Gain (VDD = 32 V, Pout = 180 W PEP, IDQ = 2 x 400 mA, f1 = 857 MHz, f2 = 863 MHz) Drain Efficiency (VDD = 32 V, Pout = 180 W PEP, IDQ = 2 x 400 mA, f1 = 857 MHz, f2 = 863 MHz) Intermodulation Distortion (VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 2 x 400 mA, f1 = 857 MHz, f2 = 863 MHz) Output Mismatch Stress (VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 2 x 400 mA, f1 = 857 MHz, f2 = 863 MHz, VSWR = 3:1 at all phase angles of test) Gps 16 17 — dB η 33 36 — % IMD — –35 –31 dBc ψ No Degradation in Output Power TYPICAL CHARACTERISTICS, BROADBAND OPERATION (In Motorola MRF372 Broadband Circuit, 50 ohm system) (2) Common Source Power Gain (VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 2 x 500 mA, f1 = 857 MHz, f2 = 863 MHz) Drain Efficiency (VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 2 x 500 mA, f1 = 857 MHz, f2 = 863 MHz) Intermodulation Distortion (VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 2 x 500 mA, f1 = 857 MHz, f2 = 863 MHz) (1) Each side of device measured separately. (2) Measured in push–pull configuration. Gps — 14.5 — dB η — 37 — % IMD — –31 — dBc MRF372 2 MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS 200 C oss , C iss , Capacitance (pF) Ciss C rss , Capacitance (pF) 150 15 20 100 Coss 50 Crss 10 5 0 0 10 20 30 40 50 0 60 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) Note: Ciss does not include input matching capacitance. Figure 1. Capacitance versus Voltage MOTOROLA RF DEVICE DATA MRF372 3 GATE DRAIN L1 VGG + C3 R2 R1 L2 L3 R3 L4 R4 R5 VDD C5 C8 C7 C12 C10 Figure 2. 860 MHz Narrowband DC Bias Networks Table 1. 860 MHz Narrowband DC Bias Networks Component Designations and Values MRF372 4 ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ C1 C2 2.2 pF Chip Capacitor, B Case, ATC 0.5 — 5.0 pF Variable Capacitor, B Case, Johansen Gigatrim 47.0 pF Chip Capacitors, B Case, ATC 100 pF Chip Capacitors, B Case, ATC 10.0 pF Chip Capacitor, B Case, ATC 2.7 pF Chip Capacitors, A Case, ATC 10.0 pF Chip Capacitor, B Case, ATC 5.1 pF Chip Capacitor, B Case, ATC C3A, B C5A, B C6 C7A, B C8A, B C9 22 mF, 22 V Tantalum Chip Capacitors, Kemet #T491D226K22AS C4A, B, C14A, B 1.0 mF, 100 V Chip Capacitors, Vitramon #VJ3640Y105KXBAT 2.2 mF, 100 V Chip Capacitors, Vitramon #VJ3640Y225KXBAT 0.01 mF, 100 V Chip Capacitors, Kemet #VJ1210Y103KXBAT 3.9 pF Chip Capacitor, B Case, ATC 1.2 pF Chip Capacitor, B Case, ATC 130 nH, Coilcraft #132–11SM 3.85 nH, Coilcraft #0906–4 5.0 nH, Coilcraft #A02T C10A, B C11 C12A, B C13 C15 L1A, B L3A, B L4A, B L2A, B #24 AWG, 3 Turns Loose, Fair Rite #2643706001 R1A, B, R2A, B R4A, B, R5A, B R3A, B PCB 180 Ω, 1/4 W Chip Resistors, Vishay Dale (1210) 12 Ω, 1/8 W Chip Resistors, Vishay Dale (1206) MRF372 Printed Circuit Board Rev 1a, Rogers RO4350, Height 30 mils, εr = 3.48 Balun A, B Vertical 860 MHz Broadband Balun, Printed Circuit Board Rev 01, Rogers RO3010, Height 50 mils, εr = 10.2 Designation Description MOTOROLA RF DEVICE DATA R2A R1A C3A L1A C5A L2A C4A C1 C8A L3A R3A C6 C2 C4B R3B C3B R1B R2B L1B L2B C5B L3B C8B C7B C9 R4B L4B C11 R5B C12B C10B MRF372 Rev 1a C13 C7A C10A C12A R4A R5A L4A C14A C15 C14B Vertical Balun Mounting Detail Output 2 (12.5 ohm microstrip) Output 1 (12.5 ohm microstrip) Motorola Vertical 860 MHz Balun Rogers RO3010 (50 mil thick) PCB Substrate (30 mil thick) Note: Trim Balun PCB so that a 35 mil "tab" fits into the main PCB slot" resulting in Balun solder pads being level with the PCB substrate solder pads when fully inserted. Input (50 ohm microstrip) Ground 55 mil slot cut out to accept Balun Figure 3. 860 MHz Narrowband Component Layout MOTOROLA RF DEVICE DATA MRF372 5 TYPICAL TWO–TONE NARROWBAND CHARACTERISTICS 35 30 h, DRAIN EFFICIENCY (%) G ps , POWER GAIN (dB) 25 20 15 10 5 0 10 Pout, OUTPUT POWER (WATTS) AVG. Note: IMR measured using Delta Marker Method. IMR VDD = 32 Vdc IDQ = 1.6 A 2 K Mode 64 QAM 10 dB Peak/Avg. Ratio Gps -15 IMR, INTERMODULATION RATIO (dB) -20 h -25 -30 -35 -40 -45 -50 100 Figure 4. COFDM Performance (860 MHz) 40 35 h, DRAIN EFFICIENCY (%) G ps , POWER GAIN (dB) 30 25 20 15 10 5 10 Pout, OUTPUT POWER (WATTS) AVG. Note: IMR measured using Delta Marker Method. 100 Gps IMR h VDD = 32 Vdc IDQ = 1.6 A 6 dB Peak/Avg. Ratio -15 -20 -25 -30 -35 -40 -45 -50 IMR, INTERMODULATION RATIO (dB) 20 18 G ps, POWER GAIN (dB) 16 14 12 10 IDQ = 1.6 A 1.2 A 800 mA 400 mA VDD = 32 Vdc f1 = 857 MHz f2 = 863 MHz 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 5. 8–VSB Performance (860 MHz) Figure 6. Power Gain versus Output Power IMD, INTERMODULATION DISTORTION (dBc) -10 -15 -20 -25 -30 -35 -40 -45 -50 10 VDD = 32 Vdc f1 = 857 MHz f2 = 863 MHz IDQ = 400 mA 800 mA 1.2 A 1.6 A 100 Pout, OUTPUT POWER (WATTS) PEP 45 40 η , DRAIN EFFICIENCY (%) D 35 30 25 20 15 10 5 VDD = 32 Vdc IDQ = 800 mA f1 = 857 MHz f2 = 863 MHz 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 7. Intermodulation Distortion versus Output Power MRF372 6 Figure 8. Drain Efficiency versus Output Power MOTOROLA RF DEVICE DATA Zo = 10 Ω Zsource f = 875 MHz f = 845 MHz f = 875 MHz f = 845 MHz Zload VDD = 32 V, IDQ = 800 mA, Pout = 180 W PEP f MHz 845 860 875 Harmonics f GHz 1.69 1.72 1.75 Zsource Ω 2.85 – j14.30 3.27 – j14.32 3.35 – j14.36 Zload Ω 1.23 – j9.37 1.54 – j9.60 1.73 – j9.62 Zsource Ω 3.99 + j2.50 3.56 + j1.98 3.18 + j1.46 Zload Ω 5.63 – j0.38 5.28 – j0.43 4.94 – j0.56 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test - Output Matching Network Z source Z + load Figure 9. Narrowband Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA MRF372 7 GATE DRAIN VGG R6 + C9 C8 R7 R2 L2 R5 L3 R9A R9B VDD + C7 C18 C17 C16 R3 R4T Figure 10. 470–860 MHz Broadband DC Bias Networks Table 2. 470–860 MHz Broadband DC Bias Networks Component Designations and Values Designation C1 C2, C13 C4 C5 C6 Description 0.7 pF Chip Capacitor, B Case, ATC 0.8 — 8.0 pF Variable Capacitors, Johansen Gigatrim 100 pF Chip Capacitors, B Case, ATC 4.7 pF,Chip Capacitor, B Case, ATC 7.5 pF Chip Capacitor, B Case, ATC MRF372 8 ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ C3A, B, C14A, B, C, D 10.0 pF Chip Capacitor, B Case, ATC 6.2 pF Chip Capacitors, A Case, ATC C7A, B C8A, B C9A, B C10 C11 C12 22 mF, 22 V Tantalum Chip Capacitors, Kemet #T491D226K22AS 0.1 mF, 100 V Chip Capacitors, Vitramon #VJ3640Y104KXBAT 13 pF Chip Capacitor, B Case, ATC 6.8 pF Chip Capacitor, B Case, ATC 3.9 pF Chip Capacitor, B Case, ATC C15A, B 3.3 pF Chip Capacitors, B Case, ATC C16A, B C17A, B C18A, B L1A, B L2A, B R1A, B R2A, B 10 mF, 35 V Tantalum Chip Capacitors, Kemet #T491D106K35AS 3.3 mF, 100 V Chip Capacitors, Vitramon #VJ3640Y335KXBAT 0.01 mF Chip Capacitors, B Case, ATC 12.55 nH, Coilcraft #1606–10 5.45 nH, Coilcraft #0906–5 12.5 nH, Coilcraft #A04T L3A, B, C 10 Ω, 1/4 W Chip Resistors, Vishay Dale (1210) 2.2 kΩ, 1/4 W Chip Resistors, Vishay Dale (1210) 390 Ω, 1/8 W Chip Resistors, Vishay Dale (1206) 6.2 Ω, 1/4 W Chip Resistors, Vishay Dale (1210) 100 kΩ Potentiometer, Bourns R3A, B, R10A, B R4TA, B R5A, B R6A, B R7 R8 520 Ω, Thermistor, Vishay #NTHS—1206J14520R5% 6.8 kΩ, 1/4 W Chip Resistors, Vishay Dale (1210) 47.3 kΩ, 1/8 W Chip Resistor, Vishay Dale (1206) 180 Ω, 1/4 W Chip Resistors, Vishay Dale (1210) R9A, B, C, D PCB MRF372 Printed Circuit Board Rev 1a, Rogers RO4350, Height 30 mils, εr = 3.48 Balun A, B Vertical 660 MHz Broadband Balun, Printed Circuit Board Rev 01, Rogers RO3010, Height 50 mils, εr = 10.2 MOTOROLA RF DEVICE DATA C8A R6A R4TA R2A L2A R5A C5 C6 C16A R8 C9A L1A C3A C4 R3A C7A C17A C18A R9A R9B R1A C1 C2 R1B L3A C15A C14A R10A C10 C11 C12 L3B C14B C13 C14C C15B R10B C3B R5B L2B R2B C7B R3B R9C C18B L3C R9D C14D L1B R6B C9B C8B C17B MRF372 Rev. 1a R7 R4TB C16B Vertical Balun Mounting Detail Output 2 (12.5 ohm microstrip) Output 1 (12.5 ohm microstrip) Motorola Vertical 660 MHz Balun Rogers RO3010 (50 mil thick) PCB Substrate (30 mil thick) Note: Trim Balun PCB so that a 35 mil tab" fits into the main PCB slot" resulting in Balun solder pads being level with the PCB substrate solder pads when fully inserted. Input (50 ohm microstrip) Ground 55 mil slot cut out to accept Balun Figure 11. 470–860 MHz Broadband Component Layout MOTOROLA RF DEVICE DATA MRF372 9 TYPICAL TWO–TONE BROADBAND CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dBc) 20 18 16 Gps = 660 MHz 14 12 10 860 MHz 470 MHz VDD = 32 Vdc IDQ = 1.0 A f1 - f2 = 6 MHz -10 -15 -20 -25 -30 -35 -40 -45 -50 10 IMD = 470 MHz 860 MHz VDD = 32 Vdc IDQ = 1.0 A f1 - f2 = 6 MHz G ps, POWER GAIN (dB) 660 MHz 10 100 Pout, OUTPUT POWER (WATTS) PEP 100 Pout, OUTPUT POWER (WATTS) PEP Figure 12. Power Gain versus Output Power Figure 13. Intermodulation Distortion versus Output Power 45 40 hD , DRAIN EFFICIENCY (%) 35 30 25 20 15 10 5 10 100 Pout, OUTPUT POWER (WATTS) PEP VDD = 32 Vdc IDQ = 1.0 A f1 - f2 = 6 MHz hD = 860 MHz 660 MHz 470 MHz Figure 14. Drain Efficiency versus Output Power MRF372 10 MOTOROLA RF DEVICE DATA Zo = 10 Ω Zo = 10 Ω f = 470 MHz f = 470 MHz Zload f = 860 MHz f = 860 MHz Zsource VDD = 32 V, IDQ = 1.0 A, Pout = 180 W PEP f MHz 470 560 660 760 860 Zsource Ω 4.46 + j2.57 6.40 – j1.06 7.84 – j0.14 6.67 – j0.46 6.25 – j0.31 Zload Ω 4.88 + j3.50 5.45 + j0.07 8.13 – j0.73 8.27 + j1.00 7.52 – j0.02 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test - Output Matching Network Z source Z + load Figure 15. Broadband Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA MRF372 11 PACKAGE DIMENSIONS G L ccc R M 4 2X TA M B M J 1 2 Q bbb M TA M B M (LID) NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DIMENSION H TO BE MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.140 (28.96) BASED ON 3M SCREW. DIM A B C D E F G H J K L M N Q R S bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.180 0.224 0.325 0.335 0.060 0.070 0.004 0.006 1.100 BSC 0.097 0.107 0.2125 BSC 0.135 0.165 0.425 BSC 0.852 0.868 0.851 0.869 0.118 0.138 0.395 0.405 0.394 0.406 0.010 REF 0.015 REF DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 4.57 5.69 8.26 8.51 1.52 1.78 0.10 0.15 27.94 BSC 2.46 2.72 5.397 BSC 3.43 4.19 10.8 BSC 21.64 22.05 21.62 22.07 3.00 3.30 10.03 10.29 10.01 10.31 0.25 REF 0.38 REF B 5 4X (FLANGE) K 4X 3 4 S (INSULATOR) M B D bbb M M bbb TA B M TA M B M ccc M TA N (LID) M B M F E H bbb A M M (INSULATOR) C B M TA A T M SEATING PLANE STYLE 1: PIN 1. 2. 3. 4. 5. CASE 375G–04 ISSUE E NI–860C3 Motorola reserves the right to make changes without further notice to any products herein. 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MOTOROLA and the logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF372 12 ◊ MRF372/D MOTOROLA RF DEVICE DATA This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.