MRF373R1

ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF373/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 28 volt transmitter equipment. • Guaranteed CW Performance at 860 MHz, 28 Volts, Narrowband Fixture Output Power – 60 Watts Power Gain – 13 dB Efficiency – 50% • Typical Performance at 860 MHz, 28 Volts, Broadband Push–Pull Fixture Output Power – 100 Watts (PEP) Power Gain – 11.2 dB Efficiency – 40% IMD – –30 dBc D MRF373R1 MRF373SR1 470 – 860 MHz, 60 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS • Excellent Thermal Stability • 100% Tested for Load Mismatch Stress at All Phase Angles with 5:1 VSWR @ 28 Vdc, 860 MHz, 60 Watts CW • In Tape and Reel. R1 = 500 units per 32 mm, 13 inch Reel. CASE 360B–05, STYLE 1 NI–360 MRF373R1 ARCHIVED 2005 G CASE 360C–05, STYLE 1 NI–360S MRF373SR1 S MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Drain Current – Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature MRF373SR1 Symbol VDSS VGS ID PD Tstg TJ Value 65 ±20 7 173 1.33 – 65 to +150 200 Unit Vdc Vdc Adc W W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case MRF373SR1 MRF373R1 Symbol RθJC RθJC Max 0.75 1 Unit °C/W °C/W NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 6 MOTOROLA RF  Motorola, Inc. 2002 DEVICE DATA MRF373R1 MRF373SR1 1 Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0 Vdc, ID =1 µA) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate–Source Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 V, ID = 200 µA) Gate Quiescent Voltage (VDS = 28 V, ID = 100 mA) Drain–Source On–Voltage (VGS = 10 V, ID = 3 A) Forward Transconductance (VDS = 10 V, ID = 3 A) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) Output Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) Ciss Coss Crss – – – 79 46 4 – – – pF pF pF VGS(th) VGS(Q) VDS(on) gfs 2 3 – 2.2 3 4 0.6 2.9 4 5 0.8 – Vdc Vdc Vdc S V(BR)DSS IDSS IGSS 65 – – – – – – 1 1 Vdc µAdc µAdc Symbol Min Typ Max Unit ARCHIVED 2005 Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) FUNCTIONAL CHARACTERISTICS, CW Operation Common Source Power Gain (VDD = 28 V, Pout = 60 W, IDQ = 200 mA, f = 860 MHz) Drain Efficiency (VDD = 28 V, Pout = 60 W, IDQ = 200 mA, f = 860 MHz) Load Mismatch (VDD = 28 V, Pout = 60 W, IDQ = 200 mA, f = 860 MHz, Load VSWR at 5:1 at All Phase Angles) Gps η ψ 13 50 14.7 54 – – dB % No Degradation in Output Power TYPICAL CHARACTERISTICS, 2 Tone Operation, Push Pull Configuration (MRF373SR1), Broadband Fixture Common Source Power Gain (VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 400 mA, f1 = 860.0 MHz, f2 = 866 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 400 mA, f1 = 860.0 MHz, f2 = 866 MHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 400 mA, f1 = 860.0 MHz, f2 = 866 MHz) Gps – 11.2 – dB η – 40 – % IMD – –30 – dBc MRF373R1 MRF373SR1 2 MOTOROLA RF DEVICE DATA Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 VGG R2 C15 C14 C13 R1 C10 C4 C1 Z7 RF INPUT Z1 C8 C6 C5 Z2 Z3 Z4 Z5 Z6 Z8 Z9 L1 C11 C12 VDD Z10 Z11 C7 Z12 RF OUTPUT C2 C3 C9 ARCHIVED 2005 C1 C2 C3 C4, C5, C6 C7, C8 C9 C10, C13 C11 C12 C14 C15 L1 R1 R2 4.7 pF, B Case Chip Capacitor, ATC 15 pF, B Case Chip Capacitor, ATC 6.8 pF, B Case Chip Capacitor, ATC 10 pF, B Case Chip Capacitor, ATC 47 pF, B Case Chip Capacitor, ATC 0.2 pF, B Case Chip Capacitor, ATC 300 pF, B Case Chip Capacitor, ATC, Side Mounted 2) 2.2 mF, 50 V, Kemet P/N C1825C225 22 mF, 50 V, Kemet P/N T491D226K50AS 2) 1.0 mF, 50 V, Kemet P/N C1825C105 10 mF, 35 V, Kemet P/N T491D106K35AS 22 nH, Coilcraft P/N B07T 1.2 kΩ, Vishay Dale Chip Resistor (1206) 12 kΩ, Vishay Dale Chip Resistor (1206) Connectors N–Type (female), M/A Com P/N 3052–1648–10 PCB MRF373 Printed Circuit Board Rev 01, CuClad 250 (GX–0300–55), height 30 mils, εr = 2.55 Heatsink Motorola P/N 95–11LDMOSKPS–1 LDMOS m250 3″ x 5″ Bedstead Insert Motorola P/N 95–11LDMOSKPS–2 Insert for LDMOS m250 3″ x 5″ Bedstead End Plates 2) Motorola P/N 93–3MB–9, End Plate for Type–N Connector Banana Jack and Nut 2) Johnson P/N 108–0904–001 Brass Banana Jack 2) H.H. Smith P/N SM–101 Figure 1. Single–Ended Narrowband Test Circuit Schematic (MRF373R1) TO GATE BIAS SUPPLY R2 C14 C15 R1 C13 C4 C1 C2 C6 C5 C11 C10 L1 C3 C7 C12 TO DRAIN BIAS SUPPLY C8 C9 MRF373 Figure 2. Single–Ended Narrowband Test Circuit Layout (Suitable for Use with MRF373R1) MOTOROLA RF DEVICE DATA MRF373R1 MRF373SR1 3 Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Figure 3. MRF373R1 Narrowband Test Fixture Photo VDD R2 C20 C7 Z10 RF INPUT Z1 C10 C11 C9 C8 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z11 C1 Z12 L1 RF OUTPUT C21 C22 VGG C25 C24 C23 R1 ARCHIVED 2005 Z13 Z14 Z15 C5 Z16 C2 C3 C4 C6 C1, C2 C3 C4, C11 C5, C10 C6 C7 C8 C9 C20, C23 C21 C24 C22 C25 L1 R1 R2 18 pF, B Case Chip Capacitor, ATC 12 pF, B Case Chip Capacitor, ATC 0.8 pF, B Case Chip Capacitor, ATC 68 pF, B Case Chip Capacitor, ATC 0.3 pF, B Case Chip Capacitor, ATC 15 pF, B Case Chip Capacitor, ATC 10 pF, B Case Chip Capacitor, ATC 1.8 pF, B Case Chip Capacitor, ATC 300 pF, B Case Chip Capacitor, ATC, Side Mounted 2) 2.2 mF, 100 V, Vishay P/N VJ3640Y225KXBAT 2) 1.0 mF, 50 V, Kemet P/N C1825C105 22 mF, 35 V, Kemet P/N T491D226K35AS 10 mF, 35 V, Kemet P/N T491D106K35AS 22 nH, Coilcraft P/N B07T 1.2 kΩ, Vishay Dale Chip Resistor (1206) 12 kΩ, Vishay Dale Chip Resistor (1206) Connectors N–Type (female), M/A Com P/N 3052–1648–10 PCB MRF373 Printed Circuit Board Rev 01, CuClad 250 (GX–0300–55), height 30 mils, εr = 2.55 (new PCB’s available from CMR) Heatsink Motorola P/N 95–11LDMOSKPS–1 LDMOS m250 3″ x 5″ Bedstead Insert Motorola P/N 95–11LDMOSKPS–2S Insert for LDMOS m250S 3″ x 5″ Bedstead End Plates 2) Motorola P/N 93–3MB–9, End Plate for Type–N Connector Banana Jack and Nut 2) Johnson P/N 108–0904–001 Brass Banana Jack 2) H.H. Smith P/N SM–101 Figure 4. Single–Ended Narrowband Test Circuit Schematic (MRF373SR1) MRF373R1 MRF373SR1 4 MOTOROLA RF DEVICE DATA Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 TO GATE BIAS SUPPLY R2 C24 C25 R1 C23 C7 C1 C9 C8 C2 C21 C20 L1 C3 C4 C5 C22 TO DRAIN BIAS SUPPLY C11 C10 C6 MRF373S Figure 5. Single–Ended Narrowband Test Circuit Layout (Suitable for Use with MRF373SR1) ARCHIVED 2005 Figure 6. MRF373SR1 Narrowband Test Circuit Photo MOTOROLA RF DEVICE DATA MRF373R1 MRF373SR1 5 Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 TYPICAL CHARACTERISTICS FOR MRF373R1 IN SINGLE–ENDED FIXTURE 18 G p, POWER GAIN (dB) IRL, INPUT RETURN LOSS (dB) 17 G p, POWER GAIN (dB) IDQ = 500 mA 400 mA 300 mA 200 mA 100 mA 16 VDD = 28 V f = 860 MHz 22 20 18 16 14 12 10 8 13 30 35 40 45 Pout, OUTPUT POWER (dBm) 50 6 800 820 860 840 880 f, FREQUENCY (MHz) 900 920 VDD = 28 V IDQ = 200 mA Pout = 60 W (CW) Gp IRL η 58 57 56 55 54 53 52 51 50 η , DRAIN EFFICIENCY (%) 15 14 Figure 7. Power Gain versus Output Power Figure 8. Performance in Narrowband Circuit 120 100 C, CAPACITANCE (pF) 80 60 Coss 40 20 Crss 0 0 10 20 30 40 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 50 Ciss ARCHIVED 2005 Figure 9. Capacitance versus Voltage Table 1. Common Source S–Parameters (VDS = 28 V, ID = 2.0 A) f MHz 400 450 500 550 600 650 700 750 800 850 900 S11 |S11| 0.921 0.922 0.924 0.926 0.929 0.932 0.936 0.940 0.945 0.951 0.957 ∠φ 182 181 180 179 178 177 176 176 175 174 173 |S21| 2.23 1.95 1.70 1.49 1.31 1.16 1.03 0.93 0.84 0.78 0.72 S21 ∠φ 52 49 46 42 38 35 31 28 26 24 24 |S12| 0.009 0.009 0.010 0.011 0.013 0.015 0.017 0.019 0.021 0.023 0.025 S12 ∠φ 39 53 64 72 78 81 82 82 82 80 78 |S22| 0.824 0.832 0.841 0.851 0.860 0.870 0.881 0.892 0.904 0.917 0.929 S22 ∠φ 184 184 184 183 183 182 182 181 180 180 179 MRF373R1 MRF373SR1 6 MOTOROLA RF DEVICE DATA Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 C19A R3 R4 R2A R5T C17A C16A C18A L1A C6 L4 R1B C7 C8 C9 C10 L2 C11 L1B C18B C16B C12 C13 C14B C14A C15 R6 R7A L5 C2 C1 L6 L3A R1A C5 C3A C4 C3B R7B L3B R2B C17B MRF373S C19B Vertical Balun Mounting Detail ARCHIVED 2005 Output 2 (12.5 ohm microstrip) Output 1 (12.5 ohm microstrip) Motorola Vertical 660 MHz Balun Rogers RO3010 (50 mil thick) PCB Substrate (30 mil thick) Note: Trim Balun PCB so that a 35 mil tab" fits into the main PCB slot" resulting in Balun solder pads being level with the PCB substrate solder pads when fully inserted. Input (50 ohm microstrip) Ground 55 mil slot cut out to accept Balun Figure 10. MRF373SR1 Broadband Push–Pull Component Layout MOTOROLA RF DEVICE DATA MRF373R1 MRF373SR1 7 Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Table 2. MRF373SR1 Broadband Push–Pull Application Parts List Designation C1 C2, C4, C10 C3A, B C5, C6, C9 C7, C8 C11 C12 C13, C18A, B C14A, B C15 C16A, B C17A, B, C19A, B L1A, B, L3A, B, L4, L5 L2, L6 R1A, B R2A, B R3 R4 R5T PCB Balun A, B 10 pF, AVX, P12101J100GBT 120 pF, 300 V, AVX, AQ149M121JAJBE 12 pF, AVX, P12101J120GBT 18 pF, AVX, P12101J180GBT 6.8 pF, AVX, P12101J6R8BBT 4.7 pF, AVX, P12101J4R7BBT 3.3 pF, AVX, P12101J3R3BBT 100 pF, 500 V, AVX, AQ147M101JAJBE 2.7 pF, AVX, P12101J2R7BBT 3.3 mF, 100 V, Vitramon P/N VJ3640Y335KXBAT 22 mF, 35 V, Kemet P/N T491D226K35AS 8.0 nH, Coilcraft P/N A03T 12.5 nH, Coilcraft P/N A04T 22 Ω, Vishay Dale Chip Resistor, 1/4 W (1206) 10 Ω, Vishay Dale Chip Resistor, 1/4 W (1206) 390 Ω, Vishay Dale Chip Resistor (1206) 2.4 kΩ, Vishay Dale Chip Resistor (1206) 470 Ω Thermistor, KOA SPEER MOT P/N 0680149M01 MRF373 PP Printed Circuit Board Rev 2C, Rogers RO4350, Height 30 mils, εr = 3.48 Vertical 660 MHz Broadband Balun, Printed Circuit Board Rev 01, Rogers RO3010, Height 50 mils, εr = 10.2 Description 1.0 pF, AVX, P12101J1R0BBT ARCHIVED 2005 MRF373R1 MRF373SR1 8 MOTOROLA RF DEVICE DATA Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 TYPICAL TWO–TONE BROADBAND CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dBc) -10 -15 -20 -25 -30 -35 -40 -45 -50 1 660 MHz 860 MHz 10 100 Pout, OUTPUT POWER (WATTS) PEP 1000 470 MHz VDD = 28 Vdc DFREQUENCY = 6 MHz IDQ = 250 mA per side 15 14 Gps, POWER GAIN (dB) 13 12 11 10 9 8 1 10 100 Pout, OUTPUT POWER (WATTS) PEP 1000 660 MHz 470 MHz VDD = 28 Vdc DFREQUENCY = 6 MHz IDQ = 250 mA per side 860 MHz Figure 11. Intermodulation Distortion versus Output Power (MRF373S Broadband Push–Pull Fixture) Figure 12. Broadband Power Gain versus Output Power (MRF373S Broadband Push–Pull Fixture) 50 40 30 470 MHz 20 10 0 VDD = 28 Vdc DFREQUENCY = 6 MHz IDQ = 250 mA per side 860 MHz 660 MHz ARCHIVED 2005 η , DRAIN EFFICIENCY (%) D 1 10 100 Pout, OUTPUT POWER (WATTS) PEP 1000 Figure 13. Efficiency versus Output Power (MRF373S Broadband Push–Pull Fixture) MOTOROLA RF DEVICE DATA MRF373R1 MRF373SR1 9 Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 NOTES ARCHIVED 2005 MRF373R1 MRF373SR1 10 MOTOROLA RF DEVICE DATA Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 PACKAGE DIMENSIONS 2X B G 1 Q aaa M TA M B M 3 NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. INCHES MIN MAX 0.795 0.805 0.225 0.235 0.125 0.175 0.210 0.220 0.055 0.065 0.004 0.006 0.562 BSC 0.077 0.087 0.220 0.250 0.355 0.365 0.357 0.363 0.125 0.135 0.227 0.233 0.225 0.235 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.19 20.45 5.72 5.97 3.18 4.45 5.33 5.59 1.40 1.65 0.10 0.15 14.28 BSC 1.96 2.21 5.59 6.35 9.02 9.27 9.07 9.22 3.18 3.43 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF B (FLANGE) 2X 2 D bbb M T A 2X M K ccc H M R (LID) B M TA M B M F N (LID) ccc M TA C M B M E S (INSULATOR) aaa SEATING PLANE M TA M B M DIM A B C D E F G H K M N Q R S aaa bbb ccc T M (INSULATOR) bbb M TA M B M A A CASE 360B–05 ISSUE F NI–360 MRF373R1 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE ARCHIVED 2005 A B A (FLANGE) NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX 0.375 0.385 0.225 0.235 0.105 0.155 0.210 0.220 0.035 0.045 0.004 0.006 0.057 0.067 0.085 0.115 0.355 0.365 0.357 0.363 0.227 0.23 0.225 0.235 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 9.53 9.78 5.72 5.97 2.67 3.94 5.33 5.59 0.89 1.14 0.10 0.15 1.45 1.70 2.16 2.92 9.02 9.27 9.07 9.22 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF 1 B (FLANGE) 2X 2 2X K M D M bbb TA M B R (LID) ccc H N (LID) M TA M B F M ccc E M TA M B M S (INSULATOR) C PIN 3 bbb M SEATING PLANE M aaa M TA M B M STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE M (INSULATOR) T M TA B CASE 360C–05 ISSUE D NI–360S MRF373SR1 MOTOROLA RF DEVICE DATA MRF373R1 MRF373SR1 11 Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 ARCHIVED 2005 Motorola reserves the right to make changes without further notice to any products herein. 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All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T. Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF373R1 MRF373SR1 12 ◊ MOTOROLA RF DEVICE DATA MRF373/D Archived 2005