MRF374A

MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Order this document by MRF374A/D The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large–signal, common source amplifier applications in 28/32 volt transmitter equipment. • Typical Two–Tone Performance @ 860 MHz, 32 Volts, Narrowband Fixture Output Power — 130 Watts PEP Power Gain — 17.3 dB Efficiency — 41% IMD — –32.5 dBc • 100% Tested for Load Mismatch Stress at All Phase Angles with 10:1 VSWR @ 32 Vdc, 860 MHz, 130 Watts, f1 = 857 MHz, f2 = 863 MHz • Integrated ESD Protection • Excellent Thermal Stability • Characterized with Differential Large–Signal Impedance Parameters MRF374A 470 – 860 MHz, 130 W, 32 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Freescale Semiconductor, Inc... CASE 375F–04, STYLE 1 NI–650 MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 70 – 0.5, +15 302 1.72 – 65 to +150 200 Unit Vdc Vdc Watts W/°C °C °C ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 1 (Minimum) M2 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.58 Unit °C/W NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 3 MOTOROLA RF  Motorola, Inc. 2003 DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF374A 1 Freescale Semiconductor, Inc. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS (1) Drain–Source Breakdown Voltage (VGS = 0 Vdc, ID =10 µA) Zero Gate Voltage Drain Current (VDS = 32 Vdc, VGS = 0 Vdc) Gate–Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = 10 V, ID = 200 µA) Gate Quiescent Voltage (VDS = 32 V, ID = 100 mA) VGS(th) VGS(Q) VDS(on) 2 2.5 — 2.9 3.3 0.41 4 4.5 0.45 Vdc Vdc Vdc V(BR)DSS IDSS IGSS 70 — — — — — — 1 1 Vdc µAdc µAdc Symbol Min Typ Max Unit Freescale Semiconductor, Inc... Drain–Source On–Voltage (VGS = 10 V, ID = 3 A) DYNAMIC CHARACTERISTICS (1) Input Capacitance (VDS = 32 V, VGS = 0 V, f = 1 MHz) Output Capacitance (VDS = 32 V, VGS = 0 V, f = 1 MHz) Reverse Transfer Capacitance (VDS = 32 V, VGS = 0 V, f = 1 MHz) Ciss Coss Crss — — — 97.3 49 1.91 — — — pF pF pF FUNCTIONAL CHARACTERISTICS, NARROWBAND OPERATION (In Motorola MRF374A Narrowband Circuit, 50 ohm system) (2) Common Source Power Gain (VDD = 32 Vdc, Pout = 130 W PEP, IDQ = 2 x 200 mA, f1 = 857 MHz, f2 = 863 MHz) Drain Efficiency (VDD = 32 Vdc, Pout = 130 W PEP, IDQ = 2 x 200 mA, f1 = 857 MHz, f2 = 863 MHz) Intermodulation Distortion (VDD = 32 Vdc, Pout = 130 W PEP, IDQ = 2 x 200 mA, f1 = 857 MHz, f2 = 863 MHz) Load Mismatch (VDD = 32 Vdc, Pout = 130 W Two–Tone, IDQ = 2 x 200 mA, f1 = 857 MHz, f2 = 863 MHz, VSWR 10:1 at All Phase Angles of Test) Gps 16 17.3 — dB η 36 41.2 — % IMD — –32.5 –28 dB No Degradation in Output Power TYPICAL CHARACTERISTICS, BROADBAND OPERATION (In Motorola MRF374 Broadband Circuit, 50 ohm system) Common Source Power Gain (VDD = 32 Vdc, Pout = 100 W PEP, IDQ = 750 mA, f1 = 857 MHz, f2 = 863 MHz) Drain Efficiency (VDD = 32 Vdc, Pout = 100 W PEP, IDQ = 750 mA, f1 = 857 MHz, f2 = 863 MHz) Intermodulation Distortion (VDD = 32 Vdc, Pout = 100 W PEP, IDQ = 750 mA, f1 = 857 MHz, f2 = 863 MHz) (1) Each side of device measured separately. (2) Measured in push–pull configuration. Gps — 15.8 — dB η — 35 — % IMD — 34.5 — dB MRF374A 2 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. MRF374 Rev 3a C7A L3A R2 L4 C4A R1A L2A C13A C14A C12A C11 L1B C12B C14B VGS R3A VDD R4A C9A C6 R1B C10 C9B R4B L3B L2B C7B L1A RF INPUT C1 C2 C3 C4B C5 RF OUTPUT C13B VGS R3B VDD Freescale Semiconductor, Inc... Vertical Balun Mounting Detail Output 2 (12.5 ohm microstrip) Output 1 (12.5 ohm microstrip) Motorola Vertical 860 MHz Balun Rogers RO3010 (50 mil thick) PCB Substrate (30 mil thick) Note: Trim Balun PCB so that a 35 mil "tab" fits into the main PCB slot" resulting in Balun solder pads being level with the PCB substrate solder pads when fully inserted. Input (50 ohm microstrip) Ground 55 mil slot cut out to accept Balun Figure 1. MRF374A Narrowband Test Circuit Component Layout MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF374A 3 Freescale Semiconductor, Inc. Table 1. MRF374A Narrowband Test Circuit Component Layout Designations and Values Designation C1 C2 C3 C4A, B, C12A, B C5 C6 C7A, B, C14A, B C9A, B C10 C11 C13A, B L1A, B L2A, B L3A, B L4 R1A, B R2 R3A, B R4A, B PCB Balun B1A, B Description 0.8 pF Chip Capacitor, B Case, ATC 2.2 pF Chip Capacitor, B Case, ATC 0.5 – 5.0 pF Variable Capacitor, Johanson Gigatrim 47 pF Chip Capacitors, B Case, ATC 1.0 pF Chip Capacitor, B Case, ATC 10 pF Chip Capacitor, B Case, ATC 100,000 pF Chip Capacitors, B Case, ATC 15 pF Chip Capacitors, B Case, ATC 3.9 pF Chip Capacitor, B Case, ATC 5.1 pF Chip Capacitor, B Case, ATC 2.2 mF, 100 V Chip Capacitors, Vishay #VJ3640Y225KXBAT 5.0 nH, Coilcraft #A02T 8.0 nH, Coilcraft #A03T 130.0 nH, Coilcraft #132–11SMJ 8.8 nH, Coilcraft #1606–8 51 W, 1/4 W Chip Resistors, Vishay Dale (1210) 10 W, 1/2 W Chip Resistor, Vishay Dale (2010) 3.3 kW, 1/8 W Chip Resistors, Vishay Dale (1206) 180 W, 1/4 W Chip Resistors, Vishay Dale (1210) MRF374 Printed Circuit Board Rev 03, Rogers RO4350, Height 30 mils, εr = 3.48 Vertical 860 MHz Narrowband Balun, Printed Circuit Board Rev 01, Rogers RO3010, Height 50 mils, εr = 10.2 Freescale Semiconductor, Inc... MRF374A 4 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. C19 VGS R6 R7A C18A R4 R3 R5T R2A MRF374 C15A C17A C16A VDD L3A C3A C4 C5 R1A L5 C2 C6 L4 R1B C7 C8A C9A C10 L2 L1A C12 C11 C13 C14A RF INPUT C1 RF OUTPUT C14B L6 R7B C3B C8B C9B L1B L3B C17B C15B R2B C16B VGS C18B VDD Freescale Semiconductor, Inc... Vertical Balun Mounting Detail Output 2 (12.5 ohm microstrip) Output 1 (12.5 ohm microstrip) Motorola Vertical 660 MHz Balun Rogers RO3010 (50 mil thick) PCB Substrate (30 mil thick) Note: Trim Balun PCB so that a 35 mil tab" fits into the main PCB slot" resulting in Balun solder pads being level with the PCB substrate solder pads when fully inserted. Input (50 ohm microstrip) Ground 55 mil slot cut out to accept Balun Figure 2. MRF374 Broadband Test Circuit Component Layout MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF374A 5 Freescale Semiconductor, Inc. Table 2. MRF374 Broadband Test Circuit Component Designations and Values Designation C1 C2 C3A, B, C14A, B C4 C5 C6 C7 C8A, B C9A, B C10 C11 C12 C13 C15A, B C16A, B C17A, B C18A, B C19 L1A, B, L3A, B, L4, L5 L2, L6 R1A, B R2A, B, R7A, B R3 R4 R5T R6 PCB Balun B1, B2 Description 0.8 pF Chip Capacitor, B Case, ATC 8.2 pF Chip Capacitor, B Case, ATC 100 pF Chip Capacitors, B Case, ATC 7.5 pF Chip Capacitor, B Case, ATC 3.0 pF Chip Capacitor, B Case, ATC 9.1 pF Chip Capacitor, B Case, ATC 15 pF Chip Capacitor, B Case, ATC 12 pF Chip Capacitors, B Case, ATC 4.7 pF Chip Capacitors, B Case, ATC 10 pF Chip Capacitor, B Case, ATC 3.6 pF Chip Capacitor, B Case, ATC 3.0 pF Chip Capacitor, B Case, ATC 2.7 pF Chip Capacitor, B Case, ATC 3.3 mF, 100 V Chip Capacitors, Vitramon #VJ3640Y335KXBAT 22 mF, 35 V Chip Capacitors, Kemet #491D226K035AS 3.9 pF Chip Capacitors, B Case, ATC 2.2 mF, 50 V Chip Capacitors, Vitramon #VJ2225Y225KXAAT 10 mF, 35 V Chip Capacitor, Kemet #T491D106K035AS 8.0 nH, Coilcraft #A03T 12.5 nH, Coilcraft #A04T 22 Ω, 1/8 W Chip Resistor, Vishay Dale (1206) 10 Ω, 1/8 W Chip Resistor, Vishay Dale (1206) 390 Ω, 1/8 W Chip Resistor, Vishay Dale (1206) 2.4 kΩ, 1/8 W Chip Resistor, Vishay Dale (1206) 470 Ω Thermistor, KOA SPEER MOT #0680149M01 6.8 kΩ, 1/2 W Resistor (Axial Lead), Vishay Dale (2010) MRF374 Printed Circuit Board Rev 03, Rogers RO4350, Height 30 mils, εr = 3.48 Vertical 660 MHz Broadband Balun, Printed Circuit Board Rev 01, Rogers RO3010, Height 50 mils, εr = 10.2 Freescale Semiconductor, Inc... MRF374A 6 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. MRF374A TYPICAL CHARACTERISTICS 18 17.5 G ps , POWER GAIN (dB) 17 16.5 16 15.5 15 400 Pout = 100 W (PEP) IDQ = 750 mA nFrequency = 6 MHz 500 600 700 800 900 VDD = 32 Vdc -15 -20 -25 -30 -35 -40 -45 -50 400 32 Vdc VDD = 28 Vdc Pout = 100 W (PEP) IDQ = 750 mA nFrequency = 6 MHz 28 Vdc IMD, INTERMODULATION DISTORTION (dBc) 500 600 700 800 900 Freescale Semiconductor, Inc... f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 3. Gain versus Frequency in Broadband Circuit 45 IRL, INPUT RETURN LOSS (dB) 40 η, DRAIN EFFICIENCY (%) 35 30 25 20 VDD = 28 Vdc 32 Vdc Pout = 100 W (PEP) IDQ = 750 mA nFrequency = 6 MHz 20 Gps G ps , POWER GAIN (dB) 15 Figure 4. Intermodulation Distortion versus Frequency in Broadband Circuit 40 35 VDD = 32 Vdc Pout = 100 W (PEP) IDQ = 750 mA nFrequency = 6 MHz η D 10 30 5 25 IRL 0 400 20 900 400 500 600 700 800 900 500 600 700 800 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 5. Drain Efficiency versus Frequency in Broadband Circuit η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 200 C oss , C iss , Capacitance (pF) 20 Figure 6. Performance in Broadband Circuit 40 35 30 25 20 15 10 5 0 0.1 1 η 10 VDD = 32 Vdc IDQ = 1.1 A f = 860 MHz 2 K Mode COFDM 64 QAM 10.5 Peak/Avg. Ratio Gps IMR η , DRAIN EFFICIENCY (%) D -20 -25 -30 -35 -40 -45 -50 -55 -60 100 IMR, INTERMODULATION (dBc) 100 Ciss 10 50 Coss Crss 5 0 0 10 20 30 40 50 0 60 C rss , Capacitance (pF) 150 15 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) Pout, OUTPUT POWER (WATTS) AVG. Figure 7. Capacitance versus Voltage Figure 8. COFDM Intermodulation, Gain and Efficiency versus Output Power in Broadband Circuit MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF374A 7 Freescale Semiconductor, Inc. MRF374A TYPICAL CHARACTERISTICS η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 40 35 30 25 20 15 10 5 0 0.1 η 1 10 Gps IMR VDD = 32 Vdc IDQ = 1.1 A f = 860 MHz -20 -25 IMR, INTERMODULATION (dBc) G ps , POWER GAIN (dB) -30 -35 -40 -45 -50 -55 -60 100 19 18 17 16 15 14 13 1 10 100 Pout, OUTPUT POWER (WATTS) PEP IDQ = 1.0 A 800 mA 600 mA 400 mA 200 mA VDD = 32 Vdc f = 857 MHz nFrequency = 6 MHz Freescale Semiconductor, Inc... Pout, OUTPUT POWER (WATTS) AVG. Figure 9. 8–VSB Intermodulation, Gain and Efficiency versus Output Power in Broadband Circuit Figure 10. Power Gain versus Peak Output Power in Narrowband Circuit IMD, INTERMODULATION DISTORTION (dBc) -20 -25 -30 -35 -40 -45 -50 -55 1 800 mA 1.0 A VDD = 32 Vdc f = 857 MHz nFrequency = 6 MHz 100 600 mA IDQ = 200 mA η , DRAIN EFFICIENCY (%) D 50 40 30 20 10 0 VDD = 32 Vdc IDQ = 800 mA f = 857 MHz nFrequency = 6 MHz 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 400 mA 10 Pout, OUTPUT POWER (WATTS) PEP Figure 11. Intermodulation Distortion versus Peak Output Power in Narrowband Circuit Figure 12. Drain Efficiency versus Peak Output Power in Narrowband Circuit MRF374A 8 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. MRF374A TYPICAL CHARACTERISTICS VDD = 28 Vdc 18 17.5 G ps , POWER GAIN (dB) 17 16.5 16 15.5 15 560 MHz 760 MHz 660 MHz 860 MHz VDD = 28 Vdc IDQ = 750 mA Tone Spacing = 6 MHz 18 17.5 G ps , POWER GAIN (dB) 17 560 MHz 16.5 16 15.5 15 1 10 100 Pout, OUTPUT POWER (WATTS) PEP 1 10 100 Pout, OUTPUT POWER (WATTS) PEP 760 MHz 660 MHz 860 MHz VDD = 32 Vdc IDQ = 750 mA Tone Spacing = 6 MHz 470 MHz VDD = 32 Vdc 470 MHz Freescale Semiconductor, Inc... Figure 13. Power Gain versus Peak Output Power in Broadband Circuit 45 VDD = 28 Vdc IDQ = 750 mA Tone Spacing = 6 MHz 860 MHz η, DRAIN EFFICIENCY (%) 560 MHz 660 MHz 470 MHz Figure 14. Power Gain versus Peak Output Power in Broadband Circuit 40 η, DRAIN EFFICIENCY (%) 35 VDD = 32 Vdc IDQ = 750 mA Tone Spacing = 6 MHz 860 MHZ 560 MHz 660 MHz 470 MHz 30 25 20 15 10 5 0 1 10 100 Pout, OUTPUT POWER (WATTS) PEP 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 15. Drain Efficiency versus Peak Output Power in Broadband Circuit -25 -30 -35 -40 -45 -50 VDD = 28 Vdc IDQ = 750 mA Tone Spacing = 6 MHz 660 MHZ 560 MHZ 860 MHZ Figure 16. Drain Efficiency versus Peak Output Power in Broadband Circuit -25 -30 -35 -40 760 MHZ -45 -50 1 10 100 Pout, OUTPUT POWER (WATTS) PEP 470 MHZ VDD = 32 Vdc IDQ = 750 mA Tone Spacing = 6 MHz 660 MHZ 560 MHZ 860 MHZ IMD, INTERMODULATION DISTORTION (dBc) 760 MHZ 470 MHZ 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 17. Intermodulation Distortion versus Peak Output Power in Broadband Circuit IMD, INTERMODULATION DISTORTION (dBc) Figure 18. Intermodulation Distortion versus Peak Output Power in Broadband Circuit MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF374A 9 Freescale Semiconductor, Inc. f = 470 MHz Zsource f = 470 MHz Zo = 4 Ω Zload f = 860 MHz f = 860 MHz Zo = 4 Ω f = 845 MHz f = 845 MHz Zsource f = 875 MHz Zload f = 875 MHz Freescale Semiconductor, Inc... MRF374 VDD = 28 V, IDQ = 400 mA, Pout = 100 W PEP f MHz 470 660 860 Zsource Ω 5.79 + j0.97 4.52 – j0.50 3.16 – j3.73 Zload Ω 4.54 – j2.82 4.21 – j3.04 3.86 – j3.44 MRF374A VDD = 32 V, IDQ = 400 mA, Pout = 130 W PEP f MHz 845 860 875 Zsource Ω 3.33 – j2.42 3.03 – j2.39 2.73 – j3.10 Zload Ω 4.56 – j2.86 4.22 – j3.16 3.87 – j3.52 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test - Output Matching Network Z source Z + load Figure 19. Series Equivalent Input and Output Impedance MRF374A 10 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. NOTES Freescale Semiconductor, Inc... MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF374A 11 Freescale Semiconductor, Inc. PACKAGE DIMENSIONS bbb M TA M B M G D 2X bbb M TA M B M L B 1 2 Q bbb M TA M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K L M N Q R S bbb ccc INCHES MIN MAX 1.135 1.145 0.225 0.235 0.135 0.178 0.210 0.220 0.055 0.065 0.004 0.006 0.900 BSC 0.077 0.087 0.220 0.250 0.260 BSC 0.643 0.657 0.638 0.650 .125 .135 0.227 0.233 0.225 0.235 0.010 BSC 0.015 BSC DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 28.80 29.10 5.72 5.97 3.43 4.52 5.33 5.59 1.40 1.65 0.11 0.15 22.86 BSC 1.96 2.21 5.59 6.35 6.60 BSC 16.33 16.69 16.20 16.50 3.175 3.43 5.77 5.92 5.715 5.97 0.254 BSC 0.381 BSC S (INSULATOR) (FLANGE) K 4 PL 3 4 R (LID) ccc M B M TA B M Freescale Semiconductor, Inc... N (LID) ccc M (INSULATOR) bbb M M TA M B M TA M B M F C 5 E H A A (FLANGE) T SEATING PLANE STYLE 1: PIN 1. 2. 3. 4. 5. CASE 375F–04 ISSUE D NI–650 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. 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Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Motorola and the Stylized M Logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. E Motorola, Inc. 2003. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T. Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors MRF374A 12 MRF374A/D ◊For More Information On This Product,MOTOROLA RF DEVICE DATA Go to: www.freescale.com