MRF377R5

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF377/D The RF MOSFET Line RF Power Field-Effect Transistor Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large–signal, common source amplifier applications in 32 volt digital television transmitter equipment. • Typical Broadband DVBT OFDM Performance @ 470–860 MHz, 32 Volts, IDQ = 2.0 A, 8K Mode, 64 QAM Output Power — 45 Watts Avg. Power Gain ≥ 16.7 dB Efficiency ≥ 21% ACPR ≤ –58 dBc • Typical Broadband ATSC 8VSB Performance @ 470–860 MHz, 32 Volts, IDQ = 2.0 A Output Power — 80 Watts Avg. Power Gain ≥ 16.5 dB Efficiency ≥ 27.5% IMD ≤ –31.3 dBc • Internally Input and Output Matched for Ease of Use • Integrated ESD Protection • Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 45 Watts DVBT OFDM Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters • Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel. MAXIMUM RATINGS (1) Rating Drain–Source Voltage Gate–Source Voltage Drain Current – Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature N–Channel Enhancement–Mode Lateral MOSFET MRF377 MRF377R3 MRF377R5 470 – 860 MHz, 240 W, 32 V LATERAL N–CHANNEL RF POWER MOSFET Freescale Semiconductor, Inc... CASE 375G–04, STYLE 1 NI–860C3 Symbol VDSS VGS ID PD Tstg TJ Value 65 – 0.5, +15 17 486 2.78 – 65 to +150 200 Unit Vdc Vdc Adc W W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.36 Unit °C/W ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Charge Device Model (1) Each side of device measured separately. NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Class 1 (Minimum) M3 (Minimum) 7 (Minimum) REV 0 MOTOROLA RF  Motorola, Inc. 2003 DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF377 MRF377R3 MRF377R5 1 Freescale Semiconductor, Inc. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS (1) Drain–Source Breakdown Voltage (VGS = 0 Vdc, ID =10 µA) Zero Gate Voltage Drain Current (VDS = 32 Vdc, VGS = 0 Vdc) Gate–Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) V(BR)DSS IDSS IGSS 65 — — — — — — 1 1 Vdc µAdc µAdc Symbol Min Typ Max Unit ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 µA) Gate Quiescent Voltage (VDS = 32 Vdc, ID = 225 mA) VGS(th) VGS(Q) VDS(on) — — — 2.8 3.5 0.27 — — — Vdc Vdc Vdc Freescale Semiconductor, Inc... Drain–Source On–Voltage (VGS = 10 Vdc, ID = 3 A) DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Crss — 3.2 — pF FUNCTIONAL CHARACTERISTICS (In DVBT OFDM Single–Channel, Narrowband Fixture, 50 ohm system)(2) Common Source Power Gain (VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2 x 1000 mA, f = 860 MHz) Drain Efficiency (VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2 x 1000 mA, f = 860 MHz) Adjacent Channel Power Ratio (VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2 x 1000 mA, f = 860 MHz) Gps 16.5 18.2 — dB η 21 22.9 — % ACPR — –59.2 –57 dBc TYPICAL CHARACTERISTICS (In DVBT OFDM Single–Channel, Broadband Fixture, 50 ohm system)(2) Common Source Power Gain (VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2 x 1000 mA) f = 470 MHz f = 560 MHz f = 660 MHz f = 760 MHz f = 860 MHz Drain Efficiency (VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2 x 1000 mA) f = 470 MHz f = 560 MHz f = 660 MHz f = 760 MHz f = 860 MHz Adjacent Channel Power Ratio (VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2 x 1000 mA) f = 470 MHz f = 560 MHz f = 660 MHz f = 760 MHz f = 860 MHz (1) Each side of device measured separately. (2) Measured in push–pull configuration. Gps — — — — — η — — — — — ACPR — — — — — –59.3 –59.3 –58.7 –58.7 –58.1 — — — — — 23.5 25.8 23.0 22.7 21.3 — — — — — dBc 17.6 17.6 17.4 17.4 16.8 — — — — — % dB MRF377 MRF377R3 MRF377R5 2 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS (In ATSC 8VSB Single–Channel, Broadband Fixture, 50 ohm system)(2) Characteristic Common Source Power Gain (VDD = 32 Vdc, Pout = 80 W Avg., IDQ = 2 x 1000 mA) f = 470 MHz f = 560 MHz f = 660 MHz f = 760 MHz f = 860 MHz Drain Efficiency (VDD = 32 Vdc, Pout = 80 W Avg., IDQ = 2 x 1000 mA) f = 470 MHz f = 560 MHz f = 660 MHz f = 760 MHz f = 860 MHz Intermodulation Distortion (VDD = 32 Vdc, Pout = 80 W Avg., IDQ = 2 x 1000 mA) f = 470 MHz f = 560 MHz f = 660 MHz f = 760 MHz f = 860 MHz (2) Measured in push–pull configuration. Symbol Gps — — — — — η — — — — — IMD — — — — — 31.7 32.7 32.9 34.2 35.4 — — — — — 31.0 34.3 30.1 29.6 27.8 — — — — — dBc 17.5 17.5 17.2 17.2 16.6 — — — — — % Min Typ Max Unit dB Freescale Semiconductor, Inc... MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF377 MRF377R3 MRF377R5 3 Freescale Semiconductor, Inc. Table 1. 845–875 MHz Narrowband Test Circuit Component Designations and Values Part B1, B2 Balun 1, Balun 2 C1 C2 C3 C4, C5 C6 C7, C8, C9, C10 C11, C12 C13, C14, C15, C16 C17, C18 C19, C20 C21, C22, C23, C24 Description Ferrite Beads, Surface Mount, 11 Ω (0805) 0.8–1GHz Xinger Balun 33 pF Chip Capacitor (0805) 2.7 pF Chip Capacitor (0603) 12 pF Chip Capacitor (0805) 6.8 pF Chip Capacitors (0805) 2.7 pF Chip Capacitor (0805) 3.3 pF Chip Capacitors (0805) 2.2 µF, 50 V Chip Capacitors 0.01 µF, 100 V Chip Capacitors 0.56 µF, 50 V Chip Capacitors 10 µF, 50 V Tantalum Chip Capacitors 47 µF, 16 V Tantalum Chip Capacitors 470 µF, 63 V Electrolytic Capacitors 12 nH Inductor (0603) 7.15 nH Inductor 10 nH Inductor (0603) 24 Ω, 1/8 W, 5% Chip Resistors (1206) Brass Wear Shims Arlon 30 mil, εr = 2.56 DS1152 DS Electronics Value, P/N or DWG 2508051107Y0 3A412 08055J330JBT 06035J2R7BBT 08051J120GBT 08051J6R8BBT 0805J2R7BBT 08051J3R3BBT C1825C225J5RAC3810 C1825C103J1GAC C1825C564J5RAC 522Z050/100MTRE TPSD476K016R0150 NACZF471M63V (18x22) 0603HC–12NXJB 1606–7 0603HC–10NXJB Manufacturer Fair–Rite Anaran AVX / Kyocera AVX / Kyocera AVX / Kyocera AVX / Kyocera AVX / Kyocera AVX / Kyocera Kemet Kemet Kemet Tecate AVX / Kyocera Nippon CoilCraft CoilCraft CoilCraft Freescale Semiconductor, Inc... C25, C26 L1 L2 L3, L4 R1, R2 WB1, WB2, WB3, WB4 PCB MRF377 Gate C19 VGG C22 Balun 1 C11 C9 C14 R1 WB1 L3 B1 C15 WB3 C18 MRF377 Drain VDD C26 Balun 2 C21 L2 C5 C6 WB2 WB4 C1 C2 L1 C3 C4 C7 C8 R2 C13 C24 VGG C23 C12 L4 C10 B2 C16 C17 C25 VDD C20 DS1152-A Rev 0 DS1152-B Rev 0 Figure 1. 845–875 MHz Narrowband Test Circuit Component Layout MRF377 MRF377R3 MRF377R5 4 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. TYPICAL NARROWBAND CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dBc) 19 18.5 G ps , POWER GAIN (dB) 18 -20 -30 -40 1600 mA -50 -60 -70 1800 mA 2000 mA IDQ = 1400 mA Gps 17.5 17 VDD = 32 Vdc IDQ = 2000 mA f1 = 859.95 MHz, f2 = 860.05 MHz 10 100 Pout, OUTPUT POWER (WATTS) PEP 2200 mA 16.5 16 VDD = 32 Vdc f1 = 859.95 MHz, f2 = 860.05 MHz 10 100 Pout, OUTPUT POWER (WATTS) PEP Freescale Semiconductor, Inc... Figure 2. Two–Tone Power Gain versus Output Power Figure 3. Third Order Intermodulation Distortion versus Output Power -20 IMD, INTERMODULATION DISTORTION (dBc) -30 η, DRAIN EFFICIENCY (%) -40 -50 -60 -70 -80 45 40 35 30 25 20 15 10 5 10 VDD = 32 Vdc IDQ = 2000 mA f1 = 859.95 MHz, f2 = 860.05 MHz η 3rd Order 5th Order 7th Order VDD = 32 Vdc IDQ = 2000 mA f1 = 859.95 MHz, f2 = 860.05 MHz 10 100 Pout, OUTPUT POWER (WATTS) PEP 100 Pout, OUTPUT POWER (WATTS) PEP Figure 4. Intermodulation Distortion Products versus Output Power Figure 5. Two–Tone Drain Efficiency versus Output Power 18 G ps , POWER GAIN (dB) 17 16 15 14 13 12 10 Gps 40 20 η VDD = 32 Vdc IDQ = 2000 mA f1 = 859.95 MHz, f2 = 860.05 MHz IMD 0 -20 -40 -60 100 Pout, OUTPUT POWER (WATTS) PEP -80 Figure 6. Power Gain, Efficiency and IMD versus Output Power MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com η, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) 19 60 MRF377 MRF377R3 MRF377R5 5 Freescale Semiconductor, Inc. f = 845 MHz Zload Zsource f = 845 MHz f = 875 MHz f = 875 MHz Freescale Semiconductor, Inc... Zo = 10 Ω VDD = 32 V, IDQ = 2 x 1000 mA, Pout = 45 W Avg., DVBT OFDM f MHz 845 860 875 Zsource Ω 4.66 – j5.90 4.38 – j5.64 3.93 – j5.33 Zload Ω 8.59 – j4.22 9.36 – j4.95 9.39 – j6.06 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Device Under Test Output Matching Network Input Matching Network + - Z source Z + load Figure 7. 845–875 MHz Narrowband Series Equivalent Input and Output Impedance MRF377 MRF377R3 MRF377R5 6 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. Table 2. 470—860 MHz Broadband Test Circuit Component Designations and Values Part B1, B2 Balun 1, Balun 2 C1 C2, C5 C3 C4, C7, C12, C15, C17 C6 C8 C9, C10 C11, C14 C13 C16 C18 Description Ferrite Beads, Surface Mount, 30 Ω (0603) Rogers 3.006, εr = 6.06, 1 oz Cu 12 pF Chip Capacitor (0603) 12 pF Chip Capacitors (0805) 3.9 pF Chip Capacitor (0805) 8.2 pF Chip Capacitors (0805) 3.3 pF Chip Capacitor (0805) 0.4–2.5 pF Variable Capacitor 3.3 pF Chip Capacitors (0603) 10 pF Chip Capacitor (0805) 4.7 pF Chip Capacitor (0805) 2.2 pF Chip Capacitor (0603) 2.2 pF Chip Capacitor (0805) 47 µF, 16 V Tantalum Chip Capacitors 2.2 µF, 50 V Ceramic Chip Capacitors 0.01 µF, 100 V Ceramic Chip Capacitors 0.56 µF, 50 V Ceramic Chip Capacitors 10 µF, 50 V Chip Capacitors 470 µF, 63 V Electrolytic Capacitors 15 nH Inductors (0603) 12 nH Inductors (0603) 8 nH Coil Inductors 22 nH Coil Inductor 18.5 nH Coil Inductor 12.1 Ω, 1/16 W, 1% Chip Resistors (0603) PCB Motherboard w/Integrated Daughterboard, Rogers 3003, εr = 3.03, 0.5 oz Cu DS1047 DS Electronics Value, P/N or DWG 2506033007Y0 DS1046 06035J120GBT 08051J120GBT 08051J3R9BBT 08051J8R2BBT 08051J3R3BBT 27283PC 06035J3R3BBT 08051J100GBT 08051J4R7BBT 06035J2R2BBT 08051J2R2BBT TPSD476K016R0150 C1825C225J5RAC3810 C1825C103J1GAC C1825C564J5GAC 522Z–050/100MTRE SME63VB471M12X25LL L0603150GGW003 0603HC–12NHJBU A03T–5 B07T–5 A05T–5 Manufacturer Fair–Rite DS Electronics AVX / Kyocera AVX / Kyocera AVX / Kyocera AVX / Kyocera AVX / Kyocera Gigatronics AVX / Kyocera AVX / Kyocera AVX / Kyocera AVX / Kyocera AVX / Kyocera AVX Kemet Kemet Kemet Tecate United Chemi–Con AVX CoilCraft CoilCraft CoilCraft CoilCraft Freescale Semiconductor, Inc... C19, C20, C21, C22 C23, C26 C24, C25, C27, C29 C28, C30 C31, C32 C33, C34 L1, L2 L3, L4 L5, L6 L7 L8 R1, R2 PCB Gate, PCB Drain MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF377 MRF377R3 MRF377R5 7 Freescale Semiconductor, Inc. C34 VGG C20 C19 C32 L3 R1 C9 C23 C24 B1 C8 L8 C7 C6 C5 C4 C3 C2 B2 C11 C13 C12 C14 C16 C15 L1 L5 C27 C28 C17 C1 L7 C18 VDD Freescale Semiconductor, Inc... C26 C25 L4 R2 C10 Balun 1 VGG C22 C21 L2 L6 C29 C30 C31 Balun 2 VDD C33 DS1047 Rev 4 DS1047 Rev 4 Multilayer Balun Mounting Detail Topside View Upside Down View Figure 8. 470–860 MHz Broadband Test Circuit Component Layout MRF377 MRF377R3 MRF377R5 8 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. TYPICAL DVBT OFDM BROADBAND CHARACTERISTICS ACPR, ADJACENT CHANNEL POWER RATIO η, DRAIN EFFICIENCY (%) 19 18 17 G ps , POWER GAIN (dB) 16 15 14 13 12 11 ACPR 9 480 420 10 η VDD = 32 Vdc, Pout = 45 W (Avg.), IDQ = 2000 mA 8K Mode DVBT OFDM 64 QAM Data Carrier Modulation 5 Symbols Gps 40 35 30 25 20 -40 -45 -50 -55 -60 540 600 660 720 780 840 -65 900 f, FREQUENCY (MHz) Freescale Semiconductor, Inc... Figure 9. Single–Channel DVBT OFDM Broadband Performance 19 18.5 G ps , POWER GAIN (dBc) 18 30 25 η, DRAIN EFFICIENCY (%) 20 15 10 5 0 760 MHz VDD = 32 Vdc IDQ = 2000 mA 8K Mode OFDM 64 QAM Data Carrier Modulation 5 Symbols 560 MHz 470 MHz 560 MHz 660 MHz 860 MHz 760 MHz VDD = 32 Vdc, IDQ = 2000 mA 8K Mode OFDM 64 QAM Data Carrier Modulation 5 Symbols 470 MHz 660 MHz 860 MHz 17.5 17 16.5 16 2 4 6 8 10 30 50 10 Pout, OUTPUT POWER (WATTS) AVG. 100 Pout, OUTPUT POWER (WATTS) AVG. Figure 10. Single–Channel DVBT OFDM Broadband Performance Power Gain versus Output Power Figure 11. Single–Channel DVBT OFDM Broadband Performance Drain Efficiency versus Output Power ACPR, ADJACENT CHANNEL POWER RATIO (dBc) -56 -58 -60 -62 -64 -66 -68 -20 470 MHz 660 MHz 860 MHz VDD = 32 Vdc IDQ = 2000 mA 8K Mode DVBT OFDM 64 QAM Data Carrier Modulation 5 Symbols 10 Pout, OUTPUT POWER (WATTS) AVG. 760 MHz (dB) -30 -40 -50 -60 -70 -80 560 MHz -90 -100 -110 100 -5 -4 -3 -2 -1 4 kHz BW 7.61 MHz 4 kHz BW 0 1 2 3 4 5 f, FREQUENCY (MHz) Figure 12. Single–Channel DVBT OFDM Broadband Performance Adjacent Channel Power Ratio versus Output Power Figure 13. 8K Mode DVBT OFDM Spectrum MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF377 MRF377R3 MRF377R5 9 Freescale Semiconductor, Inc. TYPICAL ATSC 8VSB BROADBAND CHARACTERISTICS 18 17 16 G ps , POWER GAIN (dB) 15 14 13 12 11 10 9 ACPR 8 420 480 540 600 660 720 780 840 η VDD = 32 Vdc Pout = 80 W (Avg.) IDQ = 2000 mA ATSC 8VSB Gps 45 40 35 30 25 -15 -20 -25 -30 -35 -45 900 ACPR, ADJACENT CHANNEL POWER RATIO η, DRAIN EFFICIENCY (%) f, FREQUENCY (MHz) Freescale Semiconductor, Inc... Figure 14. Single–Channel ATSC 8VSB Broadband Performance 19 18.5 G ps , POWER GAIN (dBc) 18 560 MHz 660 MHz 860 MHz 760 MHz η, DRAIN EFFICIENCY (%) 470 MHz VDD = 32 Vdc IDQ = 2000 mA ATSC 8VSB 40 35 30 25 20 15 10 5 VDD = 32 Vdc IDQ = 2000 mA ATSC 8VSB 470 MHz 560 MHz 660 MHz 760 MHz 860 MHz 17.5 17 16.5 16 10 Pout, OUTPUT POWER (WATTS) AVG. 100 0 10 Pout, OUTPUT POWER (WATTS) AVG. 100 Figure 15. Single–Channel ATSC 8VSB Broadband Performance Power Gain versus Output Power Figure 16. Single–Channel ATSC 8VSB Broadband Performance Drain Efficiency versus Output Power ACPR, ADJACENT CHANNEL POWER RATIO (dBc) -25 -30 860 MHz -35 -40 -45 -50 470 MHz (dB) 660 MHz 760 MHz 560 MHz VDD = 32 Vdc IDQ = 2000 mA ATSC 8VSB 10 Pout, OUTPUT POWER (WATTS) AVG. 100 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -4.0 -3.2 3.25 MHz Offset -2.4 -1.6 -0.8 0 IMRL Reference Point IMRU 3.25 MHz Offset 0.8 1.6 2.4 3.2 4.0 f, FREQUENCY (MHz) Figure 17. Single–Channel ATSC 8VSB Broadband Performance Adjacent Channel Power Ratio versus Output Power Figure 18. ATSC 8VSB Spectrum MRF377 MRF377R3 MRF377R5 10 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. f = 470 MHz f = 470 MHz Zload Zsource Zo = 10 Ω f = 860 MHz Zo = 10 Ω f = 860 MHz Freescale Semiconductor, Inc... Optimized for VDD = 32 V, IDQ = 2 x 1000 mA, Pout = 45 W Avg., DVBT OFDM f MHz 470 560 660 760 860 Zsource Ω 5.79 – j2.40 6.63 – j2.63 6.57 – j4.03 6.67 – j4.55 5.34 – j6.28 Zload Ω 6.21 – j1.69 5.66 – j1.12 6.76 – j1.00 6.57 – j1.91 7.37 – j5.45 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test - Output Matching Network Z source Z + load Figure 19. 470—860 MHz Broadband Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF377 MRF377R3 MRF377R5 11 Freescale Semiconductor, Inc. PACKAGE DIMENSIONS G L ccc R M 4 2X TA M B M J 1 2 Q bbb M TA M B M (LID) NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DIMENSION H TO BE MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.140 (28.96) BASED ON 3M SCREW. DIM A B C D E F G H J K L M N Q R S bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.180 0.224 0.325 0.335 0.060 0.070 0.004 0.006 1.100 BSC 0.097 0.107 0.2125 BSC 0.135 0.165 0.425 BSC 0.852 0.868 0.851 0.869 0.118 0.138 0.395 0.405 0.394 0.406 0.010 REF 0.015 REF DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 4.57 5.69 8.26 8.51 1.52 1.78 0.10 0.15 27.94 BSC 2.46 2.72 5.397 BSC 3.43 4.19 10.8 BSC 21.64 22.05 21.62 22.07 3.00 3.30 10.03 10.29 10.01 10.31 0.25 REF 0.38 REF B 5 4X (FLANGE) K 4X 3 4 S (INSULATOR) M D bbb M B TA M bbb TA M B M B M Freescale Semiconductor, Inc... ccc M TA (LID) M B M N F E H bbb A (INSULATOR) M M C B M TA A T M SEATING PLANE STYLE 1: PIN 1. 2. 3. 4. 5. CASE 375G–04 ISSUE E NI–860C3 Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. 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MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2003 HOW TO REACH US: USA/EUROPE/LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1–800–521–6274 or 480–768–2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu, Minato–ku, Tokyo 106–8573, Japan 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852–26668334 HOME PAGE: http://motorola.com/semiconductors MRF377 MRF377R3 MRF377R5 12 F ◊ or More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA MRF377/D