MRF5S21100LSR3

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF5S21100L/D The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100LR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA a nd multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2 - carrier W - CDMA Performance for VDD = 28 Volts, IDQ = 1050 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 - 5 MHz and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW @ f1 - 10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Output Power — 23 Watts Avg. Power Gain — 13.5 dB Efficiency — 26% IM3 — - 37 dBc ACPR — - 40 dBc • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Qualified Up to a Maximum of 32 VDD Operation • Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal. • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MAXIMUM RATINGS Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 - 0.5, +15 250 1.43 - 65 to +150 200 Unit Vdc Vdc Watts W/°C °C °C N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100LSR3 2170 MHz, 23 W AVG., 2 x W - CDMA, 28 V LATERAL N - CHANNEL RF POWER MOSFETs Freescale Semiconductor, Inc... CASE 465 - 06, STYLE 1 NI - 780 MRF5S21100LR3 CASE 465A - 06, STYLE 1 NI - 780S MRF5S21100LSR3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 100 W CW Case Temperature 80°C, 23 W CW Symbol RθJC Value (1) 0.70 0.76 Unit °C/W (1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf . Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MOTOROLA RF  Motorola, Inc. 2004 DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF5S21100LR3 MRF5S21100LSR3 1 Freescale Semiconductor, Inc. ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Charge Device Model Class 2 (Minimum) M3 (Minimum) C7 (Minimum) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (DC) Gate Threshold Voltage (VDS = 10 Vdc, ID = 250 µAdc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1050 mAdc) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2.5 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2.5 Adc) DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2.14 — pF VGS(th) VGS(Q) VDS(on) gfs 2.5 — — — 2.8 3.8 0.24 6 3.5 — 0.3 — Vdc Vdc Vdc S IDSS IDSS IGSS — — — — — — 10 1 0.5 µAdc µAdc µAdc Symbol Min Typ Max Unit Freescale Semiconductor, Inc... FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and IM3 measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 23 W Avg., IDQ = 1050 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 23 W Avg., IDQ = 1050 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 23 W Avg., IDQ = 1050 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3 measured over 3.84 MHz BW at f1 - 10 MHz and f2 +10 MHz referenced to carrier channel power.) Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 23 W Avg., IDQ = 1050 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR measured over 3.84 MHz at f1 - 5 MHz and f2 +5 MHz.) Input Return Loss (VDD = 28 Vdc, Pout = 23 W Avg., IDQ = 1050 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) (1) Part is internally matched both on input and output. Gps 12.5 13.5 — dB η 24 26 — % IM3 — - 37 - 35 dBc ACPR — - 40 - 38 dBc IRL — - 16 -9 dB MRF5S21100LR3 MRF5S21100LSR3 MOTOROLA RF DEVICE DATA For More Information On This Product, 2 Go to: www.freescale.com Freescale Semiconductor, Inc. R4 + C12 VGG R1 R2 C4 R3 Z7 RF INPUT Z1 Z2 C13 Z3 C14 C1 DUT Z4 Z5 Z6 C3 Z8 Z9 Z10 Z11 Z12 Z13 Z14 C2 Z15 C15 Z16 Z17 RF OUTPUT C10 B1 C9 C5 C6 W1 C7 C8 + C11 VDD Freescale Semiconductor, Inc... Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 0.674″ 0.421″ 0.140″ 1.031″ 0.380″ 0.080″ 0.927″ 0.620″ 0.079″ x 0.080″ x 0.080″ x 0.080″ x 0.080″ x 0.643″ x 0.643″ x 0.048″ x 0.048″ x 1.136″ Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z10 Z11 Z12 Z13 Z14 Z15 Z16 Z17 PCB 0.368″ x 1.136″ Microstrip 0.151″ x 0.393″ Microstrip 0.280″ x 0.220″ Microstrip 0.481″ x 0.142″ Microstrip 0.138″ x 0.080″ Microstrip 0.344″ x 0.080″ Microstrip 0.147″ x 0.099″ Microstrip 0.859″ x 0.080″ Microstrip Arlon GX - 0300 - SS - 22, 30 mil, εr = 2.55 Figure 1. MRF5S21100L Test Circuit Schematic Table 1. MRF5S21100L Test Circuit Component Designations and Values Part B1 C1, C2 C3 C4 C5, C7 C6 C8 C9, C10 C11 C12 C13 C14 C15 R1 R2 R3, R4 W1 Short RF Bead 8.2 pF Chip Capacitors, B Case 5.6 pF Chip Capacitor, B Case 0.1 µF Chip Capacitor, B Case 7.5 pF Chip Capacitors, B Case 1.2 pF Chip Capacitor, B Case 1K pF Chip Capacitor, B Case 0.56 µF Chip Capacitors, B Case 470 µF, 63 V Electrolytic Capacitor 100 µF, 50 V Electrolytic Capacitor 0.6 - 4.5 pF Gigatrim Variable Capacitor 2.7 pF Chip Capacitor, B Case 0.4 - 2.5 pF Gigatrim Variable Capacitor 1 kW Chip Resistor 560 kW Chip Resistor 12 W Chip Resistors Wire Strap Description Value, P/N or DWG 95F786 100B8R2CP500X 100B5R6CP500X CDR33BX104AKWS 100B7R5JP500X 100B1R2BP500X 100B102JP500X 700A561MP150X 95F4579 51F2913 44F3358 100B2R7CP500X 44F3367 D5534M07B1K00R CR1206564JT RM73B2B120JT 14 Gauge Jumper Wire Manufacturer Newark ATC ATC Kemet ATC ATC ATC Kemet Newark Newark Newark ATC Newark Newark Newark Garrett Electronics MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF5S21100LR3 MRF5S21100LSR3 3 Freescale Semiconductor, Inc. C12 VGG C9 R1 B1 R2 R3 C4 C3 C10 C5 C6 R4 C11 VDD W1 C7 C8 C1 CUT OUT AREA C2 C13 C14 C15 Freescale Semiconductor, Inc... MRF5S21100L Rev 03 Figure 2. MRF5S21100L Test Circuit Component Layout MRF5S21100LR3 MRF5S21100LSR3 MOTOROLA RF DEVICE DATA For More Information On This Product, 4 Go to: www.freescale.com Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS 15 14 13 G ps , POWER GAIN (dB) 12 11 10 9 8 7 6 5 ACPR IM3 IRL η VDD = 28 Vdc, Pout = 23 W (Avg.), IDQ = 1050 mA 2−Carrier W−CDMA, 10 MHz Carrier Spacing 3.84 MHz Channel Bandwidth Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF) Gps 40 35 30 25 20 IM3 (dBc), ACPR (dBc) −20 −25 −30 −35 −40 0 −10 −20 −30 −40 −50 η, DRAIN EFFICIENCY (%) −45 2040 2060 2080 2100 2120 2140 2160 2180 2200 2220 2240 f, FREQUENCY (MHz) Freescale Semiconductor, Inc... Figure 3. 2 - Carrier W - DCMA Broadband Performance 16 IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc) −15 −20 −25 −30 −35 −40 −45 −50 650 mA −55 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 850 mA 1050 mA 1250 mA IDQ = 1400 mA VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two−Tone Measurement, 10 MHz Tone Spacing 15 G ps , POWER GAIN (dB) IDQ = 1400 mA 1250 mA 14 1050 mA 850 mA 13 650 mA 12 VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two−Tone Measurement, 10 MHz Tone Spacing 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 11 Figure 4. Two - Tone Power Gain versus Output Power Figure 5. Third Order Intermodulation Distortion versus Output Power IMD, INTERMODULATION DISTORTION (dBc) −20 −25 −30 −35 −40 5th Order −45 −50 −55 −60 0.1 VDD = 28 Vdc, Pout = 100 W (PEP), IDQ = 1050 mA Two−Tone Measurements, Center Frequency = 2140 MHz 1 TWO−TONE SPACING (MHz) 10 7th Order 3rd Order Pout , OUTPUT POWER (dBm) 56 55 P3dB = 51.88 dBm (154.17 W) 54 53 52 51 50 49 48 34 35 36 37 VDD = 28 Vdc, IDQ = 1050 mA Pulsed CW, 8µsec(on), 1msec(off) Center Frequency = 2140 MHz 38 39 40 41 42 P1dB = 51.18 dBm (131.22 W) Actual Ideal Pin, INPUT POWER (dBm) Figure 6. Intermodulation Distortion Products versus Tone Spacing Figure 7. Pulse CW Output Power versus Input Power MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF5S21100LR3 MRF5S21100LSR3 5 IRL, INPUT RETURN LOSS (dB) Freescale Semiconductor, Inc. η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 40 35 30 25 20 15 10 ACPR 5 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. W−CDMA −50 −55 Gps VDD = 28 Vdc, IDQ = 1050 mA f1 = 2135 MHz, f2 = 2145 MHz 2x W−CDMA, 10 MHz @ 3.84 MHz Channel Bandwidth Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF) η IM3 −30 −35 −40 −45 −15 −20 IM3 (dBc), ACPR (dBc) −25 −20 −30 −40 −50 −60 (dB) −70 −80 −90 −100 −110 −120 −25 −ACPR @ +ACPR @ 3.84 MHz BW 3.84 MHz BW −IM3 @ 3.84 MHz BW −20 −15 −10 −5 0 5 10 +IM3 @ 3.84 MHz BW 15 20 25 3.84 MHz Channel BW f, FREQUENCY (MHz) Freescale Semiconductor, Inc... Figure 8. 2 - Carrier W - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power Figure 9. 2-Carrier W-CDMA Spectrum 100 10 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK−TO−AVERAGE (dB) MTBF FACTOR (HOURS x AMPS2 ) 109 108 107 106 100 120 140 160 180 200 220 TJ, JUNCTION TEMPERATURE (_C) This above graph displays calculated MTBF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTBF factor by ID2 for MTBF in a particular application. Figure 10. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single Carrier Test Signal Figure 11. MTBF Factor versus Junction Temperature MRF5S21100LR3 MRF5S21100LSR3 MOTOROLA RF DEVICE DATA For More Information On This Product, 6 Go to: www.freescale.com Freescale Semiconductor, Inc. Z o = 10 Ω Zload* f = 2200 MHz f = 2100 MHz Freescale Semiconductor, Inc... Zsource f = 2100 MHz f = 2200 MHz VDD = 28 Vdc, IDQ = 1050 mA, Pout = 23 W Avg. f MHz 2100 2120 2160 2200 Zsource Ω 3.4 - j7.2 3.4 - j6.5 4.9 - j7.0 3.4 - j8.6 Zload Ω 1.2 - j2.1 1.4 - j2.3 2.2 - j3.0 1.7 - j2.1 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 12. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA MRF5S21100LR3 MRF5S21100LSR3 7 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. NOTES Freescale Semiconductor, Inc... MRF5S21100LR3 MRF5S21100LSR3 MOTOROLA RF DEVICE DATA For More Information On This Product, 8 Go to: www.freescale.com Freescale Semiconductor, Inc. NOTES Freescale Semiconductor, Inc... MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF5S21100LR3 MRF5S21100LSR3 9 Freescale Semiconductor, Inc. NOTES Freescale Semiconductor, Inc... MRF5S21100LR3 MRF5S21100LSR3 MOTOROLA RF DEVICE DATA For More Information On This Product, 10 Go to: www.freescale.com Freescale Semiconductor, Inc. PACKAGE DIMENSIONS B G 1 2X Q bbb M TA M B M 3 (FLANGE) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF B 2 K D bbb M TA M B M M (INSULATOR) R M (LID) bbb N (LID) M TA B M ccc M TA M B M S M (INSULATOR) Freescale Semiconductor, Inc... H ccc C TA M B M aaa M TA M B M F E A (FLANGE) A T SEATING PLANE CASE 465 - 06 ISSUE F NI - 780 MRF5S21100LR3 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE 4X U (FLANGE) B 1 4X Z (LID) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF (FLANGE) B 2 2X K D bbb M TA M B M N (LID) R M (LID) ccc M H 3 TA M B M ccc aaa M TA TA M B B M (INSULATOR) S M (INSULATOR) M bbb C M TA B M M M F T SEATING PLANE STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE E A (FLANGE) A CASE 465A - 06 ISSUE F NI - 780S MRF5S21100LSR3 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF5S21100LR3 MRF5S21100LSR3 11 Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... 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