MRF857

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF857/D The RF Line Designed for 24 Volt UHF large– signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800 – 960 MHz. Specified for VCE = 24 Vdc, IC = 0.3 Adc Characteristics Output Power = 2.1 Watts CW Minimum Power Gain = 12.5 dB Minimum ITO = + 43 dBm Typical Noise Figure = 5.25 dB Characterized with Small– Signal S–Parameters and Series Equivalent Large–Signal Parameters from 800 – 960 MHz Silicon Nitride Passivated 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ 24 Vdc, IC = 0.3 Adc and Rated Output Power Will Withstand RF Input Overdrive of 0.4 W CW Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. CLASS A 800 – 960 MHz 2.1 W (CW), 24 V NPN SILICON RF POWER TRANSISTOR CASE 305D–01, STYLE 1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Total Device Dissipation @ TC = 50 C Derate above 50 C Operating Junction Temperature Storage Temperature Range Symbol V CEO V CBO VEBO PD TJ Tstg Characteristic Thermal Resistance (TJ = 150 C, TC = 50 C) Symbol R JC Symbol Min Typ Value 30 55 4 17 0.114 200 – 65 to +150 Unit Vdc Vdc Vdc Watts W/ C C C THERMAL CHARACTERISTICS Max 8.4 Unit C/W ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 20 mA, IB = 0) Collector–Emitter Breakdown Voltage (IC = 20 mA, VBE = 0) Collector–Base Breakdown Voltage (IC = 20 mA, IE = 0) Emitter–Base Breakdown Voltage (IE = 1 mA, IC = 0) Collector Cutoff Current (VCB = 24 V, IE = 0) V (BR)CEO V(BR)CES V (BR)CBO V (BR)EBO ICES 28 55 55 4 — 35 85 85 5 — — — — — 1 Vdc Vdc Vdc Vdc mA (continued) Max Unit REV 3 MOTOROLA RF DEVICE DATA Motorola, Inc. 1997 MRF857S 1 ELECTRICAL CHARACTERISTICS — continued Characteristic ON CHARACTERISTICS DC Current Gain (IC = 0.1 A, V CE = 5 V) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 24 V, f = 1 MHz) FUNCTIONAL CHARACTERISTICS Common–Emitter Power Gain (VCE = 24 V, IC = 0.3 A, f = 840 – 900 MHz, Power Output = 2.1 W) Load Mismatch (Po = 2.1 W) (VCE = 24 V, IC = 0.3 A, f = 840 MHz, Load VSWR = 30:1, All Phase Angles) RF Input Overdrive (VCE = 24 V, IC = 0.3 A, f = 840 MHz) No degradation Third Order Intercept Point (VCE = 24 V, IC = 0.3 A) (f1 = 900 MHz, f2 = 900.1 MHz, Meas. @ IMD 3rd Order = – 40 dBc) Noise Figure (VCE = 24 V, IC = 0.3 A, f = 900 MHz) Input Return Loss (VCE = 24 V, IC = 0.3 A, f = 840 – 900 MHz, Power Output = 2.1 W) P in(over) — Pg 12.5 13.5 — dB Cob 2.4 3.3 4.4 pF hFE 30 60 120 — Symbol Min Typ Max Unit No Degradation in Output Power — 0.4 W ITO + 43 + 44.5 — dBm NF IRL — — 5.25 – 15 — –10 dB dB Table 1. MRF857S Common Emitter S–Parameters VCE (V) 24 IC (A) 0.3 f (MHz) 800 820 840 860 880 900 920 940 960 S 11 |S11| 0.915 0.915 0.915 0.913 0.914 0.914 0.913 0.915 0.916 165 165 165 164 164 163 163 162 162 |S21| 2.098 2.049 1.991 1.951 1.912 1.865 1.832 1.783 1.748 54 53 52 51 50 49 48 47 46 S21 |S12| 0.037 0.038 0.038 0.039 0.040 0.041 0.042 0.043 0.043 58 58 58 59 59 59 59 59 59 S12 |S22| 0.343 0.345 0.349 0.352 0.355 0.359 0.362 0.366 0.369 –157 –157 –157 –158 –158 –158 –158 –159 –159 S 22 Table 2. Zin and ZOL* versus Frequency f (MHz) 840 870 900 1.5 1.7 1.5 Zin (Ohms) 4.4 4.7 4.8 18.4 18.0 14.9 ZOL* (Ohms) – 26.3 – 26.1 – 26.2 V CE = 24 V, IC = 0.3 A, P o = 2.1 W ZOL* = Conjugate of optimum load impedance into which the device operates at a given output power, voltage and frequency. MRF857S 2 MOTOROLA RF DEVICE DATA R1 R2 Q1 R8 VCE F1 C1 + V_SUPPLY Q2 R9 R3 R4 R5 R7 + R6 C5 L1 TL6 C6 TL2 TL1 INPUT C10 TL5 TL10 TL3 TL9 TL8 C11 TL12 TL13 TL15 TL7 L2 DUT C12 TL16 OUTPUT TL11 TL14 C7 C8 C2 C3 B1 B2 C4 B3 R10 B4 + C9 TL4 B1, B4 B2, B3 C1 C2, C8 C3, C9 C4, C7 C5, C6 C10, C12 C11 F1 L1, L2 Q1 Q2 Long Ferrite Bead, Fair Rite (2743021447) Short Ferrite Bead, Fair Rite (2743019447) 250 F, 50 Vdc Electrolytic Capacitor 10 F, 50 Vdc Electrolytic Capacitor 0.1 F, Chip Capacitor 1000 pF, Chip Capacitor 100 pF, Chip Capacitor 43 pF, 100 Mil Chip Capacitor 0.8–8 pF, Johansen Gigatrim 1 A Micro–Fuse 5 Turns, 20 AWG, 0.126 ID, 46.2 nH MMBT2222ALT1, NPN Transistor BD136, PNP Transistor R1 R2 R3 R4 R5 R6 R7 R8 R9, R10 TL1 – TL16 V_Supply V CE Board 330 , 1/4 W 500 P otentiometer, 1/4 W 4.7K , 1/4 W 2 x 4.7K , 1/4 W 47 , 2 W 75 , 1/4 W 4.7 , 1/4 W 10 , 3 W 4 x 39 , 1/8 W Chip Resistors in Parallel Microstrip Transmission Line + 27 Vdc 0.5 V Due to Resistor Tolerance + 24 Vdc @ 0.3 A 0.030 Glass–Teflon 2 oz. Cu, r = 2.55 Figure 1. MRF857S Class A RF Test Fixture Schematic MOTOROLA RF DEVICE DATA MRF857S 3 TYPICAL CHARACTERISTICS 15 Gpe 14.5 14 13.5 13 12.5 VSWR 12 830 840 850 860 870 880 f, FREQUENCY (MHz) 890 900 1 910 VCC = 24 Vdc IC = 300 mA Pout = 2.1 W (CW) 3.5 3 2.5 2 1.5 4 Figure 2. Performance of MRF857S in Broadband Circuit 4 3.5 Pout 3 2.5 2 1.5 1 0.5 0 0 0.05 0.1 0.15 0.2 0.25 0.3 Pin, INPUT POWER (WATTS) 0.35 Gpe VCC = 24 Vdc IC = 300 mA f = 870 MHz 16 15 14 13 12 11 10 9 8 0.4 1500 Tj = 150 C Tf = 50 C 1000 500 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 VCE (Vdc) Figure 3. MRF857S Output Power & Power Gain versus Input Power Figure 4. MRF857S DC SOA 850 800 750 700 Tj = 175 C Tf = 50 C 1.00E+08 9.80E+06 1.00E+07 2.01E+06 1.00E+06 1.00E+05 4.82E+05 1.32E+05 4.03E+04 1.37E+04 5.05E+03 2.02E+03 8.67E+02 2 4 6 8 10 12 14 16 18 20 22 24 26 28 VCE (Vdc) 1.00E+02 100 120 140 160 180 200 220 TJ, JUNCTION TEMPERATURE ( C) 240 260 650 1.00E+04 600 550 50 00 1.00E+03 Figure 5. MRF857S DC SOA (This device is MTBF limited for VCE 20 Vdc.) Figure 6. MRF857S MTBF Factor versus Junction Temperature MRF857S 4 MOTOROLA RF DEVICE DATA R3 R2 R1 Q1 R6 R5 + R4 C4 B2 C5 L1 R10 C7 B3 C6 C9 + C8 C12 C11 Q2 B4 R8 C1 C3 + C2 R7 B1 R9 C10 L2 MRF857S Figure 7. MRF857S Test Fixture Component Layout MOTOROLA RF DEVICE DATA MRF857S 5 M K 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.200 0.220 0.095 0.130 0.055 0.065 0.040 0.050 0.025 0.035 0.003 0.007 0.235 0.265 45 NOM MILLIMETERS MIN MAX 5.08 5.59 2.41 3.30 1.40 1.65 1.02 1.27 0.64 0.89 0.08 0.18 5.97 6.73 45 NOM D 1 2 3 DIM A C D E F J K M F J C E A STYLE 1: PIN 1. 2. 3. 4. EMITTER BASE EMITTER COLLECTOR CASE 305D–01 ISSUE O Motorola reserves the right to make changes without further notice to any products herein. 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Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 Mfax : RMFAX0@email.sps.mot.com – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET: http://motorola.com/sps MRF857S 6 MRF857/D MOTOROLA RF DEVICE DATA