MRF9080

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9080/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large–signal, common– source amplifier applications in 26 volt base station equipment. • Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts Output Power @ P1db: 75 Watts Power Gain @ P1db: 18.5 dB Efficiency @ P1db: 55% • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 90 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters • Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal. MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 GSM 900 MHz FREQUENCY BAND, 75 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs CASE 465–06, STYLE 1 NI–780 MRF9080 CASE 465A–06, STYLE 1 NI–780S MRF9080SR3, MRF9080LSR3 MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 –0.5, +15 250 1.43 –65 to +200 200 Unit Vdc Vdc Watts W/°C °C °C ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 1 (Minimum) M1 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.7 Unit °C/W NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 2 MOTOROLA RF  Motorola, Inc. 2002 DEVICE DATA MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vds, VGS = 0) Gate–Source Leakage Current (VGS = 5 Vdc, VDS = 0 ) ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 µAdc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 700 mAdc) Drain–Source On–Voltage (VGS = 10 Vdc, ID = 2 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 6 Adc) DYNAMIC CHARACTERISTICS (1) Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) Power Output, 1 dB Compression Point (VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz) Common–Source Amplifier Power Gain @ 70 W (Min) (VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz) Drain Efficiency @ Pout = 70 W (VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz) Drain Efficiency @ P1dB (VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 70 W, IDQ = 600 mA, f = 921 and 960 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 600 mA, f = 921 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests) P1dB Gps η1 η2 IRL Ψ 68 17 47 — 9.5 75 18.5 52 55 12.5 — 20 — — — W dB % % dB Coss Crss — — 73 2.9 — — pF pF VGS(th) VGS(Q) VDS(on) gfs 2.0 — — — — 3.7 0.19 8.0 4.0 — 0.4 — Vdc Vdc Vdc S IDSS IDSS IGSS — — — — — — 10 1 1 µAdc µAdc µAdc Symbol Min Typ Max Unit No Degradation In Output Power Before and After Test (1) Part is internally input matched. (2) To meet application requirements, Motorola test fixtures are designed to cover full GSM 900 band ensuring batch to batch consistency MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 2 MOTOROLA RF DEVICE DATA VGG R3 + C7 R2 C6 R1 C1 C18 + VDD C17 C5 DUT C11 C12 C13 C15 C14 C16 RF OUTPUT RF INPUT C3 C2 C4 C8 C9 C10 Figure 1. Broadband GSM 900 Test Circuit Schematic Table 1. Broadband GSM 900 Test Circuit Component Designations and Values Part C1 C2 C3 C4, C5, C9, C10, C12, C13 C6, C16, C17 C7, C18 C8, C11 C14 C15 R1, R2, R3 WB1, WB2 Raw PCB Material PCB Description 4.7 pF Chip Capacitor, B Case 2.7 pF Chip Capacitor, B Case 1.5 pF Chip Capacitor, B Case 5.6 pF Chip Capacitors, B Case 22 pF Chip Capacitors, B Case 10 µF, 35 V Tantalum Chip Capacitors 10 pF Chip Capacitors, B Case 0.8 pF Chip Capacitor, B Case 8.2 pF Chip Capacitor, B Case 1.0 kΩ, ??? W Chip Resistors (0805) Beryllium Copper Wear Blocks 30 mil Glass Teflon, εr = 2.55 Etched Circuit Board 0.004″ x 0.210″ x 0.520″ TLX8–0300 C–GY–00–001–02 Taconic Cibel Value, P/N or DWG 100B4R7BW 100B2R7BW 100B1R5BW 100B5R6CW 100B220GW 293D106X9035D2T 100B100JW 100B0R8BW 100B8R2GW Manufacturer ATC ATC ATC ATC ATC Sprague–Vishay ATC ATC ATC MOTOROLA RF DEVICE DATA MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 3 C7 C18 R3 R2 C6 C17 VGG VDD RF INPUT C1 C2 C3 R1 C5 WB1 C4 C11 C12 C13 WB2 C15 C16 C14 RF OUTPUT CUT OUT AREA C8 C9 C10 MRF9080 Figure 2. Broadband GSM 900 Test Circuit Component Layout MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 4 MOTOROLA RF DEVICE DATA VGG + C6 U1 R1 C5 VDD + C9 R2 R3 P1 R4 T1 + C4 C3 C15 R5 R6 C7 DUT C10 C13 C14 RF OUTPUT RF INPUT C1 C2 C11 C8 C12 Figure 3. Broadband GSM 900 Optimized Demo Board Schematic Table 2. Broadband GSM 900 Optimized Demo Board Component Designations and Values Part C1 C2 C3, C15 C4, C6 C5 C7, C8 C9 C10, C11 C12, C13 C14 P1 R1 R2 R3 R4 R5, R6 T1 U1 Description 4.7 pF Chip Capacitor, ACCU–P (0805) 3.9 pF Chip Capacitor, ACCU–P (0805) 22 pF Chip Capacitors, ACCU–P (0805) 22 mF, 35 V Tantalum Chip Capacitors 1.0 mF Chip Capacitor, ACCU–P (0805) 5.6 pF Chip Capacitors, ACCU–P (0805) 220 mF, 63 V Electrolytic Capacitor 3.3 pF Chip Capacitors, ACCU–P (0805) 2.2 pF Chip Capacitors, ACCU–P (0805) 4.7 pF Chip Capacitor 5.0 kΩ Potentiometer CMS Cermet Multi–turn 10 Ω, 1/8 W Chip Resistor (0805) 1.0 kΩ, 1/8 W Chip Resistor (0805) 1.2 kΩ, 1/8 W Chip Resistor (0805) 2.2 kΩ, 1/8 W Chip Resistor (0805) 1.0 kΩ, 1/8 W Chip Resistors (0805) Bipolar NPN Transistor, SOT–23 Voltage Regulator, Micro–8 RF Connectors, Type SMA Substrate = Taconic RF35, Thickness 0.5 mm #BC847ALT1 #LP2951ACDM–5.0R2 #R125510001 ON Semiconductor ON Semiconductor Radial #08051J8R2CBT #08051J2R2CBT #100B #3224W AVX AVX ATC Bourns Value, P/N or DWG #08051J3R9CBT #08051J3R9CBT #08051J221 #T491X226K035AS4394 #08053G105ZATEA #08051J5R18CBT Manufacturer AVX AVX AVX Kemet AVX AVX MOTOROLA RF DEVICE DATA MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 5 VBIAS Ground VSUPPLY C5 R1 R2 R4 T1 R3 U1 P1 C6 C9 C15 C4 R5 C3 C1 C2 C11 C8 C12 C14 R6 C7 C10 C13 MRF9080 Figure 4. Broadband GSM 900 Optimized Demo Board Component Layout MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 6 MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS (IN MOTOROLA BROADBAND GSM 900 OPTIMIZED DEMO BOARD) 21 IDQ = 1000 mA G ps , POWER GAIN (dB) G ps , POWER GAIN (dB) 20 800 mA 600 mA 19 400 mA 18 VDD = 26 Vdc f = 940 MHz T = 25°C 1 10 Pout, OUTPUT POWER (WATTS) 100 26 Vdc 19 VDD = 22 Vdc 20 30 Vdc 18 IDQ = 600 mA f = 940 MHz T = 25°C 17 1 10 Pout, OUTPUT POWER (WATTS) 100 17 Figure 5. Power Gain versus Output Power Figure 6. Power Gain versus Output Power 21 20 G ps , POWER GAIN (dB) 19 18 17 16 15 850 VDD = 26 Vdc IDQ = 600 mA T = 25°C 870 890 910 Gps Pout = 20 W 70 W IRL Pout = 20 W 0 -5 -10 -15 -20 -25 -30 930 950 970 990 1010 1030 1050 f, FREQUENCY (MHz) 120 110 IRL, INPUT RETURN LOSS (dB) P out , OUTPUT POWER (WATTS) 100 90 80 70 60 50 40 30 20 10 0 0 0.2 0.4 Pout VDD = 26 Vdc IDQ = 600 mA f = 940 MHz T = 25°C 1 1.2 0.6 0.8 1.4 Pin, INPUT POWER (WATTS) 1.6 h 60 50 40 30 20 10 0 1.8 h, DRAIN EFFICIENCY (%) 70 W Figure 7. Power Gain and Input Return Loss versus Frequency Figure 8. Output Power and Efficiency versus Input Power 20 25°C G ps , POWER GAIN (dB) 19 50°C 85°C 18 110 P out , OUTPUT POWER (WATTS) 100 90 80 70 60 50 40 30 20 10 100 0 0 0.2 0.4 0.6 0.8 1 1.2 Pout VDD = 26 Vdc IDQ = 600 mA f = 940 MHz 1.4 1.6 Pin, INPUT POWER (WATTS) h 25°C 85°C 25°C 85°C 55 50 45 40 35 30 25 20 15 10 5 0 1.8 h, DRAIN EFFICIENCY (%) 17 VDD = 26 Vdc IDQ = 600 mA f = 940 MHz 1 10 Pout, OUTPUT POWER (WATTS) 16 Figure 9. Power Gain versus Output Power Figure 10. Output Power and Efficiency versus Input Power MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 7 MOTOROLA RF DEVICE DATA Zin f = 1000 MHz f = 880 MHz ZOL* f = 880 MHz f = 1000 MHz Zo = 10 Ω VDD = 26 V, IDQ = 600 mA, Pout = 90 W CW f MHz 880 920 960 1000 Zin Zin Ω 0.91 + j2.11 0.88 + j2.65 1.6 + j2.61 2.45 + j3.38 ZOL* Ω 1.22 + j0.12 1.00 + j0.16 1.22 + j0.22 1.14 + j0.41 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, bias current and frequency. Note: ZOL* was chosen based on tradeoffs between gain, output power and drain efficiency. Input Matching Network Device Under Test Output Matching Network Z in Z * OL Figure 11. Series Equivalent Input and Output Impedance MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 8 MOTOROLA RF DEVICE DATA NOTES MOTOROLA RF DEVICE DATA MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 9 NOTES MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 10 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS B G 1 2X Q bbb M TA M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF 3 B (FLANGE) 2 K D bbb M TA M B M M (INSULATOR) R M (LID) bbb N H C (LID) M TA TA B B M ccc aaa M TA TA M B B M S M M M M M (INSULATOR) M ccc F E A A (FLANGE) T SEATING PLANE STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465–06 ISSUE F NI–780 MRF9080 4X U (FLANGE) B 1 4X Z (LID) B (FLANGE) 2 2X K D bbb M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 --0.040 --0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --1.02 --0.76 0.127 REF 0.254 REF 0.381 REF TA M B M N (LID) R M (LID) ccc M H 3 TA M B M ccc aaa M TA TA M B B M (INSULATOR) S M (INSULATOR) M bbb C M TA B M M M F E A A (FLANGE) T SEATING PLANE CASE 465A–06 ISSUE F NI–780S MRF9080SR3, MRF9080LSR3 STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MOTOROLA RF DEVICE DATA MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 11 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. MOTOROLA and the logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF9080 MRF9080R3 MRF9080SR3◊MRF9080LSR3 12 MRF9080/D MOTOROLA RF DEVICE DATA