MRF9100

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9100/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 26 volt base station equipment. • On–Die Integrated Input Match • Typical Performance @ Full GSM Band, 921 to 960 MHz, 26 Volts Output Power, P1dB — 110 Watts (Typ) Power Gain @ P1dB — 16.5 dB (Typ) Efficiency @ P1dB — 53% (Typ) • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 100 Watts (CW) Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters • Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF9100 MRF9100R3 MRF9100SR3 GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N–CHANNEL RF POWER MOSFETs CASE 465–06, STYLE 1 (NI–780) (MRF9100) CASE 465A–06, STYLE 1 (NI–780S) (MRF9100SR3) MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 +15, –0.5 175 1.0 –65 to +200 200 Unit Vdc Vdc Watts W/°C °C °C ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Charge Device Model Class 1 (Minimum) M3 (Minimum) C7 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 1.0 Unit °C/W NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MOTOROLA RF  Motorola, Inc. 2002 DEVICE DATA MRF9100 MRF9100R3 MRF9100SR3 1 ELECTRICAL CHARACTERISTICS (TC = 25°C, 50 ohm system unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate–Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IDSS IDSS IGSS — — — — — — 10 1 1 µAdc µAdc µAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 500 µAdc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 800 mAdc) Drain–Source On–Voltage (VGS = 10 Vdc, ID = 2 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) VGS(th) VGS(Q) VDS(on) gfs 2 3 — — — — 0.19 8 4 5 0.5 — Vdc Vdc Vdc S DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.0 — pF FUNCTIONAL TESTS (In Motorola Test Fixture) Output Power, 1 dB Compression Point, CW (VDD = 26 Vdc, IDQ = 800 mA, f = 960 MHz) Common–Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 100 W CW, IDQ = 800 mA, f = 960 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 100 W CW, IDQ = 800 mA, f = 960 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 100 W CW, IDQ = 800 mA, f1 = 921 MHz and 960 MHz, f2 = 940 MHz) Third Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 100 W PEP, IDQ = 800 mA, f = Full GSM Band 921–960 MHz, Tone Spacing = 100 kHz) Output Mismatch Stress (VDD = 26 Vdc, IDQ = 800 mA, Pout = 100 W CW, f = 921 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests) (1) Part is internally matched both on input and output. P1dB Gps 100 16 110 17 — — W dB η 47 51 — % IRL — — IMD — — –20 –30 –10 — — dB dBc Ψ No Degradation In Output Power Before and After Test MRF9100 MRF9100R3 MRF9100SR3 2 MOTOROLA RF DEVICE DATA C14 R1 R2 RF INPUT + C8 R3 Z1 C1 Z2 C2 Z3 C3 Z4 Z5 C5 Z6 C4 DUT C7 C10 Z7 C9 Z8 Z13 Z9 VDD RF OUTPUT VGG C15 C6 C11 Z10 Z11 C12 C13 Z12 Figure 1. MRF9100 Test Circuit Schematic Table 1. MRF9100 Test Circuit Component Designations and Values Designators C1, C13 C2, C12 C3 C4, C5 C6, C14 C7, C8, C9, C10 C11 C15 R1, R2 R3 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Substrate Description 22 pF, 100B Chip Capacitors, ATC #100B220GW 2.2 pF, 100B Chip Capacitors, ATC #100B2R2BW 6.8 pF, 100B Chip Capacitor, ATC #100B6R8CW 10 pF, 100B Chip Capacitors, ATC #100B100GW 33 pF, 100B Chip Capacitors, ATC #100B330JW 4.7 pF, 100B Chip Capacitors, ATC #100B4R7BW 2.7 pF, 100B Chip Capacitor, ATC #100B2R7BW 10 µF, 35 V Tantalum Chip Capacitor, Vishay–Sprague #293D106X9035D 10 kW, 1/8 W Chip Resistors (0805) 1 kW, 1/8 W Chip Resistor (0805) 0.495″ x 0.087″ Microstrip 0.657″ x 0.087″ Microstrip 0.324″ x 0.087″ Microstrip 0.429″ x 0.087″ Microstrip 0.250″ x 0.790″ Microstrip 0.535″ x 0.790″ Microstrip 0.312″ x 0.790″ Microstrip 0.409″ x 0.790″ Microstrip 0.432″ x 0.087″ Microstrip 0.220″ x 0.087″ Microstrip 0.828″ x 0.087″ Microstrip 0.485″ x 0.087″ Microstrip 1.602″ x 0.087″ Microstrip Taconic TLX8, Thickness 0.8 mm MOTOROLA RF DEVICE DATA MRF9100 MRF9100R3 MRF9100SR3 3 R1 R2 C7 C6 C1 C2 C3 R3 C4 WP C5 C8 C9 WP C10 C14 C15 C11 C12 C13 MRF9100 Figure 2. MRF9100 Test Circuit Component Layout MRF9100 MRF9100R3 MRF9100SR3 4 MOTOROLA RF DEVICE DATA + C3 R1 C1 + C13 VGG U1 1 R2 P1 R3 T1 R4 R5 C5 + C14 + C4 VDD R6 C2 Z6 C9 RF INPUT Z7 Z1 C6 Z2 C7 Z4 Z3 C8 Z5 C10 Z8 Z9 Z10 C11 Z11 Z12 C12 Z13 RF OUTPUT Figure 3. MRF9100 Demo Board Schematic MOTOROLA RF DEVICE DATA MRF9100 MRF9100R3 MRF9100SR3 5 Table 2. GSM 900 Optimized Demo Board Component Designations and Values Designators C1 C2, C5 C3, C13, C14 C4 C6 C7 C8 C9, C10 C11 C12 P1 R1 R2 R3 R4 R5 R6 T1 U1 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Substrate Description 1.0 µF Chip Capacitor, AVX #08053G105ZATEA (0805) 33 pF Chip Capacitors, AVX #08051J330GBT, ACCU–P (0805) 22 µF, 35 V Tantalum Chip Capacitors, Kemet #T491x226K035AS4394 220 µF, 63 V Electrolytic Capacitor Radial, Philips #13668221 5.6 pF Chip Capacitor, AVX #08051J5R6CBT, ACCU–P (0805) 4.7 pF Chip Capacitor, AVX #08051J4R7CBT, ACCU–P (0805) 22 pF Chip Capacitor, AVX #08051J220GBT, ACCU–P (0805) 3.9 pF Chip Capacitors, AVX #08051J3R9BBT, ACCU–P (0805) 2.2 pF Chip Capacitor, AVX #08051J2R2BBT, ACCU–P (0805) 33 pF, 100B Chip Capacitor, ATC #100B330JW 5.0 kW Potentiometer CMS Cermet multi–turn, Bourns #3224W 10 W, 1/8 W Chip Resistor (0805) 1.0 kW, 1/8 W Chip Resistor (0805) 1.2 kW, 1/8 W Chip Resistor (0805) 2.2 kW, 1/8 W Chip Resistor (0805) 100 W, 1/8 W Chip Resistor (0805) 1.0 W, 1/8 W Chip Resistor (0805) NPN Bipolar Transistor, SOT–23, Motorola #BC847 Voltage Regulator, Micro–8, Motorola #LP2951 0.916″ x 0.042″ Microstrip 0.169″ x 0.042″ Microstrip 0.212″ x 0.042″ Microstrip 0.090″ x 0.465″ Microstrip 0.465″ x 0.842″ Microstrip 1.776″ x 0.059″ Microstrip 1.802″ x 0.059″ Microstrip 1.094″ x 0.592″ Microstrip 0.085″ x 0.042″ Microstrip 0.198″ x 0.042″ Microstrip 0.253″ x 0.191″ + 0.292″ x 0.061″ Microstrip 0.181″ x 0.042″ Microstrip 0.282″ x 0.042″ Microstrip Taconic RF35, Thickness 0.5 mm, εr = 3.5 MRF9100 MRF9100R3 MRF9100SR3 6 MOTOROLA RF DEVICE DATA Vbias Ground Vdrain C1 R1 U1 R2 R4 T1 R3 C2 P1 R5 R6 C9 Strap C8 C6 Strap C10 C11 C12 C3 C4 C5 C14 C13 C7 MRF9100 Figure 4. MRF9100 Demo Board Component Layout MOTOROLA RF DEVICE DATA MRF9100 MRF9100R3 MRF9100SR3 7 TYPICAL CHARACTERISTICS 19 IDQ = 1200 mA G ps , POWER GAIN (dB) 18 IDQ = 1000 mA IDQ = 800 mA IDQ = 600 mA 16 VDD = 26 Vdc f = 920 MHz TC = 25_C 1 10 100 1000 Pout, OUTPUT POWER (WATTS) 160 Pout , OUTPUT POWER (WATTS) 140 120 100 80 60 40 20 0 0 1 2 3 4 VDD = 26 Vdc IDQ = 800 mA TC = 25_C 5 6 Pin, INPUT POWER (WATTS) 865 MHz η 960 MHz 960 MHz 865 MHz 56 49 42 Pout 35 28 21 14 7 0 η, DRAIN EFFICIENCY (%) 17 15 Figure 5. Power Gain versus Output Power Figure 6. Output Power and Efficiency versus Input Power 20 18 Pout = 30 W Gps 100 W 0 -5 -10 IRL Pout = 30 W -15 -20 100 W 875 900 925 950 975 -25 1000 IRL, INPUT RETURN LOSS (dB) 19 18 G ps , POWER GAIN (dB) 17 16 15 14 13 12 1 10 100 VDD = 26 Vdc IDQ = 800 mA f = 920 MHz 1000 Pout, OUTPUT POWER (WATTS) TC = -20_C 25_C 85_C G ps , POWER GAIN (dB) 16 14 12 10 800 VDD = 26 Vdc IDQ = 800 mA TC = 25_C 825 850 f, FREQUENCY (MHz) Figure 7. Power Gain and Input Return Loss versus Frequency Figure 8. Power Gain versus Output Power 10 8 6 η 4 2 0 EVM VDD = 28 Vdc IDQ = 800 mA f = 945 MHz 50 SPECTRAL REGROWTH (dBc) 40 30 20 10 0 -50 -55 -60 -65 -70 -75 -80 @ 600 kHz VDD = 28 Vdc IDQ = 800 mA f = 945 MHz @ 400 kHz h, DRAIN EFFICIENCY (%) EVM (%) 1 10 Pout, OUTPUT POWER (WATTS) AVG. 100 -85 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. 100 Figure 9. EVM and Efficiency versus Output Power Figure 10. Spectral Regrowth versus Output Power MRF9100 MRF9100R3 MRF9100SR3 8 MOTOROLA RF DEVICE DATA f = 840 MHz Zin Zo = 5 Ω f = 1000 MHz f = 1000 MHz f = 840 MHz ZOL* VDD = 26 V, IDQ = 800 mA, Pout = 110 W (CW) f MHz 840 880 920 960 1000 Zin Zin Ω 2.04 + j0.57 2.20 + j0.16 2.00 – j0.44 2.16 – j0.25 2.62 – j0.25 ZOL* Ω 1.62 – j1.65 1.88 – j2.45 1.79 – j2.40 1.47 – j1.82 1.58 – j1.52 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. Note: ZOL* was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion. Input Matching Network Device Under Test Output Matching Network Z in Z * OL Figure 11. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA MRF9100 MRF9100R3 MRF9100SR3 9 NOTES MRF9100 MRF9100R3 MRF9100SR3 10 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS B G 1 2X Q bbb M TA M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF 3 B (FLANGE) 2 K D bbb M TA M B M M (INSULATOR) R M (LID) bbb N H C (LID) M TA TA B B M ccc aaa M TA TA M B B M S M M M M M (INSULATOR) M ccc F E A A (FLANGE) T SEATING PLANE STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465–06 ISSUE F (NI–780) (MRF9100) 4X U (FLANGE) B 1 4X Z (LID) B (FLANGE) 2 2X K D bbb M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 --0.040 --0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --1.02 --0.76 0.127 REF 0.254 REF 0.381 REF TA M B M N (LID) R M (LID) ccc M H 3 TA M B M ccc aaa M TA TA M B B M (INSULATOR) S M (INSULATOR) M bbb C M TA B M M M F E A A (FLANGE) T SEATING PLANE CASE 465A–06 ISSUE F (NI–780S) (MRF9100SR3) STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MOTOROLA RF DEVICE DATA MRF9100 MRF9100R3 MRF9100SR3 11 Motorola reserves the right to make changes without further notice to any products herein. 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MOTOROLA and the logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF9100 MRF9100R3 MRF9100SR3◊ 12 MRF9100/D MOTOROLA RF DEVICE DATA