MRF9120R3

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF9120/D The RF MOSFET Line RF Power Field Effect Transistors Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common source amplifier applications in 26 volt base station equipment. • Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 2 x 500 mA IS - 97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power — 26 Watts Power Gain — 16 dB Efficiency — 26% Adjacent Channel Power — 750 kHz: - 45 dBc @ 30 kHz BW 1.98 MHz: - 60 dBc @ 30 kHz BW • Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 120 Watts (CW) Output Power • Characterized with Series Equivalent Large - Signal Impedance Parameters • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal. • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MAXIMUM RATINGS Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature N - Channel Enhancement - Mode Lateral MOSFETs MRF9120R3 MRF9120LR3 880 MHz, 120 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETs Freescale Semiconductor, Inc. CASE 375B - 04, STYLE 1 NI - 860 Symbol VDSS VGS PD Tstg TJ Value - 0.5, +65 - 0.5, +15 250 1.43 - 65 to +150 200 Unit Vdc Vdc W W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value (1) 0.45 Unit °C/W ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 1 (Minimum) M1 (Minimum) (1) MTTF calculator available at http://www.motorola.com/semiconductors/rf . Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Rev. 7 MOTOROLA RF  Motorola, Inc. 2004 DEVICE DATA For More Information On This Product, For More Information On This Product, Go to: www.freescale.com Go to: www.freescale.com MRF9120R3 MRF9120LR3 1 Freescale Semiconductor, Inc. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS (1) Symbol IDSS IDSS IGSS Min — — — Typ — — — Max 10 1 1 Unit µAdc µAdc µAdc Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 µAdc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 450 mAdc) VGS(th) VGS(Q) VDS(on) gfs 2 — — — 3 3.8 0.17 5.3 4 — 0.4 — Vdc Vdc Vdc S Freescale Semiconductor, Inc. Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1.3 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 4 Adc) DYNAMIC CHARACTERISTICS (1) Output Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) (1) Each side of device measured separately. Coss Crss — — 50 2 — — pF pF (continued) MRF9120R3 MRF9120LR3 2 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Characteristic FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) Gps 15 16.5 — dB Symbol Min Typ Max Unit η 36 39 — % IMD — - 31 - 28 dBc IRL — - 16 -9 dB Freescale Semiconductor, Inc. Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA, f1 = 895.0 MHz, f2 = 895.1 MHz) Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA, f1 = 895.0 MHz, f2 = 895.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA, f1 = 895.0 MHz, f2 = 895.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA, f1 = 895.0 MHz, f2 = 895.1 MHz) Power Output, 1 dB Compression Point (VDD = 26 Vdc, Pout = 120 W CW, IDQ = 2 x 500 mA, f1 = 880.0 MHz) Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 120 W CW, IDQ = 2 x 500 mA, f1 = 880.0 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 120 W CW, IDQ = 2 x 500 mA, f1 = 880.0 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 120 W CW, IDQ = 2 x 500 mA, f = 880.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) (2) Device measured in push - pull configuration. Gps — 16.5 — dB η — 40.5 — % IMD — - 30 — dBc IRL — - 13 — dB P1dB — 120 — W Gps — 16 — dB η — 51 — % Ψ No Degradation In Output Power MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF9120R3 MRF9120LR3 3 Freescale Semiconductor, Inc. B6 B3 VGG + C30 C11 Balun 1 R1 C8 Z16 Z18 Z20 Z22 C19 Z24 RF INPUT Z2 Z1 C2 C1 Z3 Z5 C3 Z7 C4 Z9 C5 Z11 C6 Z13 C7 R2 C9 B1 VGG + C29 B2 C22 B5 + C23 + C24 + C28 VDD Z15 Z25 Z17 Z19 C12 L2 Z21 Z23 C18 Balun 2 DUT C13 C14 C15 C16 C17 C20 Z4 Z6 Z8 Z10 Z12 Z14 Z26 Z27 RF OUTPUT C10 L1 B4 C21 + C25 + C26 + C27 VDD Freescale Semiconductor, Inc. Z1 Z2, Z3 Z4, Z5 Z6, Z7 Z8, Z9 Z10, Z11 Z12, Z13 0.420″ 0.090″ 0.125″ 0.095″ 0.600″ 0.200″ 0.500″ x 0.080″ x 0.420″ x 0.220″ x 0.220″ x 0.220″ x 0.630″ x 0.630″ Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z14, Z15 Z16, Z17 Z18, Z19 Z20, Z21 Z22, Z23 Z24, Z25 Z26 Z27 0.040″ x 0.630″ Microstrip 0.040″ x 0.630″ Microstrip 0.330″ x 0.630″ Microstrip 0.450″ x 0.630″ Microstrip 0.750″ x 0.220″ Microstrip 0.115″ x 0.420″ Microstrip 0.130″ x 0.080″ Microstrip 0.350″ x 0.080″ Microstrip Figure 1. 880 MHz Broadband Test Circuit Schematic MRF9120R3 MRF9120LR3 4 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Table 1. 880 MHz Broadband Test Circuit Component Designations and Values Part B1, B3, B5, B6 B2, B4 C1, C2 C3, C6 C4 C5 C7, C8 C9, C10, C21, C22 C11, C12 C13 C14 C15 C16 C17 C18, C19 C20 C29, C30 C23, C24, C25, C26 C27, C28 Balun 1, Balun 2 L1, L2 R1, R2 WB1, WB2, WB3, WB4 Board Material PCB Description Long Ferrite Beads, Surface Mount Short Ferrite Beads, Surface Mount 68 pF Chip Capacitors, B Case 0.8 - 8.0 pF Variable Capacitors 7.5 pF Chip Capacitor, B Case 3.3 pF Chip Capacitor, B Case 11 pF Chip Capacitors, B Case 51 pF Chip Capacitors, B Case 6.2 pF Chip Capacitors, B Case 4.7 pF Chip Capacitor, B Case 5.1 pF Chip Capacitor, B Case 3.0 pF Chip Capacitor, B Case 2.7 pF Chip Capacitor, B Case 0.6 - 4.5 pF Variable Capacitor 47 pF Chip Capacitors, B Case 0.4 - 2.5 pF Variable Capacitor 10 µF, 35 V Tantalum Chip Capacitors 22 µF, 35 V Tantalum Chip Capacitors 220 µF, 50 V Electrolytic Capacitors Xinger Surface Mount Balun Transformers 12.5 nH Mini Spring Inductors 510 Ω, 1/4 W Chip Resistors 10 mil Brass Wear Blocks 30 mil Glass Teflon, εr = 2.55 Copper Clad, 2 oz Cu Etched Circuit Board 900 MHz Push - Pull Rev 01B 900 MHz Push - Pull Rev 01B CMR CMR Value, P/N or DWG 95F787 95F786 100B680JP500X 44F3360 100B7R5JP150X 100B3R3CP150X 100B110BCA500X 100B510JP500X 100B6R2BCA150X 100B4R7BCA150X 100B5R1BCA150X 100B2R7BCA150X 100B3R0BCA150X 44F3358 100B470JP500X 44F3367 93F2975 92F1853 14F185 3A412 A04T - 5 Manufacturer Newark Newark ATC Newark ATC ATC ATC ATC ATC ATC ATC ATC ATC Newark ATC Newark Newark Newark Newark Anaren Coilcraft Garret Freescale Semiconductor, Inc. VGG C30 B3 B4 MRF9120 900 MHz PUSH PULL Rev 01B B6 C27 VDD C10 Balun1 C2 INPUT C1 C3 C4 WB2 C6 R2 C9 C8 WB1 CUTOUT AREA C11 WB3 C25 C26 C21 L1 C19 C17 C13−C15 C16 C18 L2 C20 OUTPUT Balun2 R1 C5 C7 C12 WB4 C22 C23 C24 VGG C29 B1 B2 B5 C28 VDD Figure 2. 865 - 895 MHz Broadband Test Circuit Component Layout MOTOROLA RF DEVICE DATA MRF9120R3 MRF9120LR3 5 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS h , DRAIN EFFICIENCY (%) 18 17 G ps , POWER GAIN (dB) 16 15 14 13 12 11 10 IMD IRL Gps η VDD = 26 Vdc Pout = 120 W (PEP) IDQ = 2 x 500 mA Tone Spacing = 100 kHz 50 45 40 35 −30 −32 −34 −36 −38 860 865 870 875 880 885 890 895 900 f, FREQUENCY (MHz) −10 −12 −14 −16 −18 Freescale Semiconductor, Inc. Figure 3. Class AB Broadband Circuit Performance 18 17.5 G ps , POWER GAIN (dB) 17 16.5 16 15.5 15 1 10 1000 mA 800 mA VDD = 26 Vdc f1 = 880.0 MHz f2 = 880.1 MHz 100 1500 mA 1200 mA −10 VDD = 26 Vdc f1 = 880.0 MHz f2 = 880.1 MHz IMD, INTERMODULATION DISTORTION (dBc) −20 −30 800 mA −40 1000 mA −50 1500 mA −60 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 1200 mA Pout, OUTPUT POWER (WATTS) PEP Figure 4. Power Gain versus Output Power Figure 5. Intermodulation Distortion versus Output Power 18 60 Gps 50 40 30 20 η 8 6 VDD = 26 Vdc IDQ = 2 x 500 mA f = 880 MHz 10 Pout, OUTPUT POWER (WATTS) AVG. 100 10 0 1 h, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) −10 −20 −30 −40 3rd Order −50 −60 −70 1 10 100 1000 Pout, OUTPUT POWER (WATTS) PEP 5th Order 7th Order VDD = 26 Vdc IDQ = 2 x 500 mA f1 = 880.0 MHz f2 = 880.1 MHz 16 Gps, POWER GAIN (dB) 14 12 10 Figure 6. Intermodulation Distortion Products versus Output Power Figure 7. Power Gain and Efficiency versus Output Power MRF9120R3 MRF9120LR3 6 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS 18 Gps 16 G ps , POWER GAIN (dB) 14 η 12 10 8 IMD 6 −60 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 VDD = 26 Vdc IDQ = 2 x 500 mA f1 = 880.0 MHz f2 = 880.1 MHz 0 −20 −40 40 20 60 h, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) h, DRAIN EFFICIENCY (%) ACPR, ADJACENT CHANNEL POWER RATIO (dB) Freescale Semiconductor, Inc. Figure 8. Power Gain, Efficiency and IMD versus Output Power 18 Gps 16 G ps , POWER GAIN (dB) η 14 12 10 750 kHz 8 1.98 MHz 6 0.1 1 10 100 VDD = 26 Vdc IDQ = 2 x 500 mA f = 880 MHz IS−97, Pilot, Sync, Paging Traffic Codes 8 through 13 40 20 0 −20 −40 −60 −80 Pout, OUTPUT POWER (WATTS) AVG. Figure 9. Power Gain, Efficiency and ACPR versus Output Power MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF9120R3 MRF9120LR3 7 Freescale Semiconductor, Inc. Zo = 5 Ω f = 895 MHz Zload f = 865 MHz Zsource f = 895 MHz f = 865 MHz Freescale Semiconductor, Inc. VDD = 26 V, IDQ = 2 × 500 mA, Pout = 120 W PEP f MHz 865 880 895 Zsource Ω 4.89 - j0.2 4.54 + j0.07 3.29 - j1.3 Zload Ω 4.9 - j0.5 4.6 - j0.32 4.2 - j0.04 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test − Output Matching Network − Z source Z + load Figure 10. Series Equivalent Input and Output Impedance MRF9120R3 MRF9120LR3 8 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. NOTES Freescale Semiconductor, Inc. MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF9120R3 MRF9120LR3 9 Freescale Semiconductor, Inc. NOTES Freescale Semiconductor, Inc. MRF9120R3 MRF9120LR3 10 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. NOTES Freescale Semiconductor, Inc. MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF9120R3 MRF9120LR3 11 Freescale Semiconductor, Inc. PACKAGE DIMENSIONS 2X A G A 4 L 1 2 Q bbb M TA M B M NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.140 (28.96) BASED ON M3 SCREW. DIM A B C D E F G H K L M N Q R S bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.180 0.224 0.325 0.335 0.060 0.070 0.004 0.006 1.100 BSC 0.097 0.107 0.085 0.115 0.425 BSC 0.852 0.868 0.851 0.869 0.118 0.138 0.395 0.405 0.394 0.406 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 4.57 5.69 8.26 8.51 1.52 1.78 0.10 0.15 27.94 BSC 2.46 2.72 2.16 2.92 10.80 BSC 21.64 22.05 21.62 22.07 3.00 3.51 10.03 10.29 10.01 10.31 0.25 REF 0.38 REF B B (FLANGE) 5 3 4X 4 K 4X D bbb M TA M B M Freescale Semiconductor, Inc. ccc ccc E M M TA (LID) M B M TA (LID) M B M R N C H F (INSULATOR) S PIN 5 (INSULATOR) M bbb T B M SEATING PLANE M TA M B M bbb M TA M STYLE 1: PIN 1. 2. 3. 4. 5. DRAIN DRAIN GATE GATE SOURCE CASE 375B - 04 ISSUE E NI - 860 Information in this document is provided solely to enable system and software implementers to use Motorola products. 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MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2004 HOW TO REACH US: USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://www.freescale.com MRF9120R3 MRF9120LR3 12 For For Moreto: www.freescale.com More Go Information This Product, Information On On This Product, Go to: www.freescale.com MRF9120/D MOTOROLA RF DEVICE DATA