MRFG35010MT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRFG35010MT1/D The RF GaAs Line Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications. • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output Power — 900 mW Power Gain — 10 dB Efficiency — 28% MRFG35010MT1 3.5 GHz, 9 W, 12 V POWER FET GaAs PHEMT Freescale Semiconductor, Inc... • 9 Watts P1dB @ 3.55 GHz • Excellent Phase Linearity and Group Delay Characteristics • High Gain, High Efficiency and High Linearity • In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. CASE 466 - 02, STYLE 1 PLD - 1.5 PLASTIC MAXIMUM RATINGS Rating Drain - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Gate - Source Voltage RF Input Power Storage Temperature Range Channel Temperature(1) Symbol VDSS PD VGS Pin Tstg Tch TC Symbol RθJC Value 15 22.7(2) 0.15(2) -5 33 - 65 to +150 175 - 20 to +85 Unit Vdc Watts W/°C Vdc dBm °C °C °C Operating Case Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Max 6.6(2) Unit °C/W MOISTURE SENSITIVITY LEVEL Test Methodology Per JESD 22 - A113 (1) For reliable operation, the operating channel temperature should not exceed 150°C. (2) Simulated. Rating 1 REV 2 MOTOROLA RF  Motorola, Inc. 2003 DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRFG35010MT1 1 Freescale Semiconductor, Inc. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Saturated Drain Current (VDS = 3.5 Vdc, VGS = 0 Vdc) Off State Leakage Current (VGS = - 0.4 Vdc, VDS = 0 Vdc) Off State Drain Current (VDS = 12 Vdc, VGS = - 1.9 Vdc) Off State Current (VDS = 28.5 Vdc, VGS = - 2.5 Vdc) Gate - Source Cut - off Voltage (VDS = 3.5 Vdc, IDS = 15 mA) Quiescent Gate Voltage (VDS = 12 Vdc, IDQ = 180 mA) Symbol IDSS IGSS IDSO IDSX VGS(th) VGS(Q) Gps P1dB hD Min — — — — - 1.2 - 1.2 9.0 — 23 Typ 2.9 < 1.0 0.1 2.0 - 1.0 - 0.95 10 9 28 Max — 100 1.0 15 - 0.7 - 0.7 — — — Unit Adc µAdc mAdc mAdc Vdc Vdc dB W % Freescale Semiconductor, Inc... Power Gain (VDD = 12 Vdc, IDQ = 180 mA, f = 3.55 GHz) Output Power, 1 dB Compression Point (VDD = 12 Vdc, IDQ = 180 mA, f = 3.55 GHz) Drain Efficiency (VDD = 12 Vdc, IDQ = 180 mA, Pout = 900 mW Avg., f = 3.55 GHz) Adjacent Channel Power Ratio (VDD = 12 Vdc, Pout = 900 mW Avg., IDQ = 180 mA, f = 3.55 GHz, W - CDMA, 8.5 P/A @ 0.01% Probability, 64 CH, 3.84 MCPS) ACPR — - 43 - 40 dBc MRFG35010MT1 2 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. VGS VDD=12.0 C12 C11 C10 C9 C8 C7 C6 R1 C4 C5 C17 C18 C19 C20 C21 C22 C23 C15 C16 Z5 RF INPUT Z1 C1 Z2 Z10 RF OUTPUT Z14 C26 C2 Z3 C3 Z4 Z6 C13 Z7 Z8 C14 Z9 Z11 Z12 C25 Z13 Freescale Semiconductor, Inc... C32 C31 C30 C29 C27 Z1, Z14 Z2 Z3 Z4 Z5, Z10 Z6 Z7 0.044″ 0.044″ 0.340″ 0.380″ 0.015″ 0.027″ 0.538″ x 0.125″ Microstrip x 0.105″ Microstrip x 0.357″ Microstrip x 0.426″ Microstrip x 0.527″ Microstrip x 0.347″ Microstrip x 0.115″ Microstrip Z8 Z9 Z11 Z12 Z13 PCB 0.439″ x 0.136″ Microstrip 0.150″ x 0.280″ Microstrip 0.349″ x 0.302″ Microstrip 0.055″ x 0.130″ Microstrip 0.044″ x 0.502″ Microstrip Rogers 4350, 0.020″, εr = 3.50 Figure 1. 3.5 GHz Test Circuit Schematic Table 1. 3.5 GHz Test Circuit Component Designations and Values Designation C1, C26 C2, C14 C3, C13, C30 C4, C5, C15, C16 C6, C17 C7, C18 C8, C19 C9, C20 C10, C21 C11, C22 C12, C23 C25, C27 C29 R1 Description 7.5 pF Chip Capacitors, B Case, ATC 0.4 pF Chip Capacitors (0805), AVX 0.2 pF Chip Capacitors (0805), AVX 3.9 pF Chip Capacitors, AVX 10 pF Chip Capacitors, A Case, ATC 100 pF Chip Capacitors, A Case, ATC 100 pF Chip Capacitors, B Case, ATC 1000 pF Chip Capacitors, B Case, ATC 0.1 µF Chip Capacitors, B Case, ATC 3.9 µF Chip Capacitors, B Case, ATC 22 µF, 35 V Tantalum Surface Mount Capacitors, Newark 1.0 pF Chip Capacitors (0805), AVX 0.7 pF Chip Capacitor (0805), AVX 50 W Chip Resistor, Newark MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRFG35010MT1 3 Freescale Semiconductor, Inc. C8 C7 + C12 R1 C5 C11 C10 C9 C6 C18 C17 C15 C16 C20 C21 C22 C23 C19 + C4 C13 C14 C25 Freescale Semiconductor, Inc... C2 C1 C3 C26 C32 C31 C30 C29 C27 MRFG35010M Rev 1 Figure 2. 3.5 GHz Test Circuit Component Layout MRFG35010MT1 4 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS 0 IRL, INPUT RETURN LOSS (dB) −10 −20 −30 −40 −50 −60 0.1 1 Pout, OUTPUT POWER (WATTS) 10 ACPR IRL VDS = 12 Vdc, IDQ = 180 mA f = 3.55 GHz, 8.66 P/A 3GPP W−CDMA ΓS = 0.898é−134.03 _, ΓL = 0.828é−140.67 _ 0 −10 −20 −30 −40 −50 −60 Freescale Semiconductor, Inc... Figure 3. W - CDMA ACPR and Input Return Loss versus Output Power 12.5 G T , TRANSDUCER GAIN (dB) 12 VDS = 12 Vdc, IDQ = 180 mA f = 3.55 GHz, 8.5 P/A 3GPP W−CDMA ΓS = 0.898é−134.03 _, ΓL = 0.828é−140.67 _ PAE 11 GT 60 50 40 30 20 10 0 10 PAE, POWER ADDED EFFICIENCY (%) 11.5 10.5 10 9.5 0.1 1 Pout, OUTPUT POWER (WATTS) Figure 4. Transducer Gain and Power Added Efficiency versus Output Power NOTE: All data is referenced to package lead interface. ΓS and ΓL are the impedances presented to the DUT. All data is generated from load pull, not from the test circuit shown. MOTOROLA RF DEVICE DATA ACPR (dBc) For More Information On This Product, Go to: www.freescale.com MRFG35010MT1 5 Freescale Semiconductor, Inc. Table 2. Class AB Common Source S - Parameters at VDS = 12 Vdc, IDQ = 180 mA f GHz 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1 1.15 1.2 1.25 1.3 1.35 1.4 1.45 1.5 1.55 1.6 1.65 1.7 1.75 1.8 1.85 1.9 1.95 2 2.05 2.1 2.15 2.2 2.25 2.3 2.35 2.4 2.45 2.5 2.55 2.6 2.65 2.7 2.75 S11 |S11| 0.946 0.945 0.944 0.945 0.945 0.944 0.945 0.945 0.944 0.945 0.945 0.944 0.944 0.944 0.944 0.943 0.944 0.940 0.946 0.943 0.944 0.943 0.942 0.945 0.946 0.945 0.945 0.947 0.946 0.945 0.948 0.947 0.947 0.948 0.948 0.948 0.949 0.949 0.948 0.948 0.948 0.946 0.946 0.946 0.945 0.943 ∠φ - 177.11 - 178.28 - 179.44 179.50 178.60 177.66 176.74 175.95 175.17 174.36 173.63 172.90 172.09 171.29 170.57 169.71 168.85 168.20 167.07 166.35 163.30 162.54 161.81 161.17 160.55 160.01 159.48 159.00 158.52 158.06 157.71 157.30 156.92 156.58 156.32 156.04 155.73 155.33 154.99 154.57 154.13 153.68 153.15 152.54 151.98 151.22 |S21| 4.710 4.303 3.963 3.674 3.427 3.211 3.023 2.853 2.705 2.570 2.447 2.337 2.234 2.139 2.052 1.971 1.894 1.823 1.754 1.691 1.626 1.573 1.523 1.474 1.429 1.387 1.348 1.310 1.274 1.240 1.209 1.179 1.152 1.127 1.102 1.079 1.058 1.037 1.019 1.002 0.986 0.971 0.957 0.943 0.930 0.918 S21 ∠φ 82.28 80.79 79.23 77.69 76.28 74.83 73.24 71.74 70.36 68.88 67.47 66.06 64.52 63.11 61.73 60.26 58.81 57.49 56.13 54.75 53.36 52.16 50.87 49.56 48.35 47.14 45.88 44.70 43.55 42.30 41.23 40.16 39.09 37.97 36.90 35.82 34.70 33.62 32.54 31.44 30.35 29.28 28.12 26.91 25.73 24.52 |S12| 0.016 0.016 0.016 0.016 0.016 0.016 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.018 0.017 0.017 0.017 0.018 0.017 0.018 0.018 0.018 0.018 0.018 0.018 0.018 0.018 0.018 0.019 0.019 0.019 0.019 0.019 0.019 0.019 0.019 0.020 0.020 0.020 0.021 S12 ∠φ 8.19 7.57 7.60 7.44 7.44 7.21 7.65 7.16 7.34 7.31 7.08 7.29 7.56 7.46 7.43 7.47 7.28 7.56 7.92 7.59 7.06 7.24 7.48 7.46 7.46 7.84 7.89 7.97 7.87 7.89 7.61 7.78 7.65 7.40 7.22 6.98 7.24 7.52 7.60 7.49 7.69 8.05 8.01 8.01 7.82 7.27 |S22| 0.759 0.758 0.758 0.758 0.757 0.757 0.756 0.756 0.756 0.755 0.755 0.756 0.756 0.756 0.757 0.757 0.757 0.755 0.762 0.759 0.762 0.763 0.764 0.765 0.766 0.767 0.767 0.768 0.770 0.769 0.771 0.772 0.773 0.773 0.773 0.775 0.775 0.775 0.776 0.777 0.776 0.777 0.777 0.776 0.777 0.778 S22 ∠φ - 179.39 - 179.99 179.39 178.74 177.98 177.28 176.57 175.75 174.99 174.18 173.33 172.51 171.82 171.01 170.22 169.52 168.83 168.39 167.55 167.32 169.20 168.75 168.22 167.71 167.18 166.73 166.15 165.58 165.10 164.54 164.05 163.59 163.12 162.56 162.01 161.53 161.05 160.43 159.99 159.53 158.91 158.40 157.88 157.34 156.80 156.36 Freescale Semiconductor, Inc... MRFG35010MT1 6 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. Table 2. Class AB Common Source S - Parameters at VDS = 12 Vdc, IDQ = 180 mA (continued) f GHz 2.8 2.85 2.9 2.95 3 3.05 3.1 3.15 3.2 3.25 3.3 3.35 3.4 3.45 3.5 3.55 3.6 3.65 3.7 3.75 3.8 3.85 3.9 3.95 4 4.05 4.1 4.15 4.2 4.25 4.3 4.35 4.4 4.45 4.5 4.55 4.6 4.65 4.7 4.75 4.8 4.85 4.9 4.95 5 S11 |S11| 0.943 0.943 0.942 0.942 0.943 0.942 0.940 0.940 0.941 0.938 0.939 0.939 0.938 0.938 0.939 0.938 0.938 0.939 0.938 0.937 0.937 0.938 0.938 0.939 0.939 0.939 0.941 0.941 0.940 0.939 0.940 0.940 0.939 0.939 0.939 0.937 0.937 0.937 0.936 0.935 0.935 0.934 0.932 0.931 0.929 ∠φ 150.66 149.88 149.16 148.32 147.41 146.51 145.45 144.41 143.33 142.25 141.15 140.02 138.89 137.88 136.68 135.63 134.63 133.60 132.68 131.84 130.92 130.07 129.29 128.60 127.88 127.23 126.66 126.23 125.73 125.28 124.85 124.45 124.01 123.63 123.27 122.84 122.32 121.88 121.36 120.72 120.04 119.35 118.49 117.69 116.74 |S21| 0.906 0.894 0.883 0.872 0.862 0.853 0.842 0.833 0.823 0.814 0.804 0.795 0.785 0.776 0.767 0.757 0.748 0.739 0.729 0.720 0.711 0.702 0.694 0.686 0.678 0.671 0.664 0.658 0.651 0.645 0.640 0.635 0.630 0.627 0.623 0.620 0.619 0.618 0.617 0.615 0.614 0.613 0.613 0.614 0.614 S21 ∠φ 23.27 22.02 20.80 19.56 18.28 16.96 15.64 14.29 13.00 11.67 10.32 8.97 7.61 6.26 4.96 3.67 2.34 1.04 - 0.25 - 1.47 - 2.69 - 3.89 - 5.07 - 6.23 - 7.34 - 8.46 - 9.57 - 10.65 - 11.72 - 12.82 - 13.86 - 14.92 - 16.00 - 17.01 - 18.03 - 19.03 - 20.17 - 21.26 - 22.45 - 23.68 - 24.90 - 26.12 - 27.41 - 28.72 - 30.05 |S12| 0.021 0.022 0.021 0.021 0.021 0.022 0.022 0.022 0.022 0.022 0.022 0.022 0.022 0.023 0.023 0.023 0.024 0.024 0.024 0.024 0.024 0.024 0.024 0.024 0.025 0.025 0.025 0.025 0.026 0.026 0.026 0.027 0.027 0.028 0.028 0.029 0.029 0.030 0.030 0.031 0.031 0.031 0.031 0.032 0.033 S12 ∠φ 6.42 5.21 4.17 4.03 3.53 3.11 2.65 2.43 2.48 2.48 2.08 1.99 2.11 2.05 1.79 1.56 1.02 0.44 - 0.54 - 1.30 - 1.98 - 2.38 - 2.22 - 2.00 - 1.80 - 2.04 - 2.17 - 2.15 - 2.48 - 2.81 - 2.79 - 2.73 - 3.22 - 3.26 - 3.64 - 3.74 - 4.57 - 5.02 - 6.01 - 7.22 - 7.64 - 8.05 - 8.39 - 8.32 - 8.48 |S22| 0.776 0.777 0.778 0.778 0.778 0.780 0.780 0.779 0.782 0.781 0.781 0.782 0.783 0.782 0.783 0.785 0.783 0.783 0.785 0.785 0.785 0.786 0.787 0.787 0.788 0.789 0.789 0.788 0.789 0.789 0.788 0.789 0.789 0.788 0.788 0.789 0.788 0.788 0.788 0.787 0.786 0.786 0.786 0.785 0.786 S22 ∠φ 155.80 155.28 154.81 154.25 153.67 153.18 152.64 152.04 151.43 150.92 150.33 149.74 149.19 148.72 147.97 147.40 146.88 146.20 145.61 145.17 144.52 143.87 143.24 142.61 141.94 141.34 140.69 140.01 139.31 138.65 137.91 137.16 136.45 135.67 134.88 134.16 133.36 132.50 131.67 130.83 129.91 129.03 128.20 127.24 126.32 Freescale Semiconductor, Inc... MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRFG35010MT1 7 Freescale Semiconductor, Inc. PACKAGE DIMENSIONS L R 2 C P 10_DRAFT ZONE X U S ZONE V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W, AND X. INCHES MIN MAX 0.255 0.265 0.225 0.235 0.065 0.072 0.130 0.150 0.021 0.026 0.026 0.044 0.050 0.070 0.045 0.063 0.160 0.180 0.273 0.285 0.245 0.255 0.230 0.240 0.000 0.008 0.055 0.063 0.200 0.210 0.006 0.012 0.006 0.012 0.000 0.021 0.000 0.010 0.000 0.010 MILLIMETERS MIN MAX 6.48 6.73 5.72 5.97 1.65 1.83 3.30 3.81 0.53 0.66 0.66 1.12 1.27 1.78 1.14 1.60 4.06 4.57 6.93 7.24 6.22 6.48 5.84 6.10 0.00 0.20 1.40 1.60 5.08 5.33 0.15 0.31 0.15 0.31 0.00 0.53 0.00 0.25 0.00 0.25 AF 3 4 NK 1 D B E 0.89 (0.035) X 45 _ "5 _ Freescale Semiconductor, Inc... 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Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3- 3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MRFG35010MT1 8 F ◊ or More Information On This Product, Go to: www.freescale.com É ÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ H G J STYLE 1: PIN 1. 2. 3. 4. ZONE W RESIN BLEED/FLASH ALLOWABLE DRAIN GATE SOURCE SOURCE DIM A B C D E F G H J K L N P Q R S U ZONE V ZONE W ZONE X CASE 466 - 02 ISSUE B PLD- 1.5 PLASTIC MOTOROLA RF DEVICE DATA MRFG35010MT1/D