MW4IC2230GMBR1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MW4IC2230/D The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W - CDMA base station applications. It uses Motorola’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband On - Chip design makes it usable from 1600 to 2400 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, CDMA and W - CDMA. Final Application Typical Single - carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 60 mA, IDQ2 = 350 mA, Pout = 5 Watts Avg., f = 2140 MHz, Channel Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 31 dB Drain Efficiency — 15% ACPR @ 5 MHz = - 45 dBc @ 3.84 MHz Bandwidth Driver Application Typical Single - carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 60 mA, IDQ2 = 350 mA, Pout = 0.4 Watts Avg., f = 2140 MHz, Channel Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 31.5 dB ACPR @ 5 MHz = - 53.5 dBc @ 3.84 MHz Bandwidth • Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 5 Watts CW Output Power • Characterized with Series Equivalent Large - Signal Impedance Parameters • On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output) • Integrated Temperature Compensation with Enable/Disable Function • On - Chip Current Mirror gm Reference FET for Self Biasing Application (1) • Integrated ESD Protection • Also Available in Gull Wing for Surface Mount • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel MW4IC2230MBR1 MW4IC2230GMBR1 2110 - 2170 MHz, 30 W, 28 V SINGLE W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS Freescale Semiconductor, Inc... CASE 1329 - 09 TO - 272 WB - 16 PLASTIC MW4IC2230MBR1 CASE 1329A - 03 TO - 272 WB - 16 GULL PLASTIC MW4IC2230GMBR1 VRD1 VRG1 VDS2 VDS1 PIN CONNECTIONS GND VDS2 VRD1 VRG1 VDS1 RFin VDS3/RFout VGS1 VGS2 VGS3 GND 1 2 3 4 5 6 7 8 9 10 11 16 15 GND 3 Stages IC 14 RFin VDS3/ RFout VGS1 VGS2 VGS3 Quiescent Current Temperature Compensation 13 12 GND Functional Block Diagram (Top View) NOTE: Exposed backside flag is source terminal for transistors. (1) Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.motorola.com/semiconductors/rf . Select Documentation/Application Notes - AN1987. REV 2 MOTOROLA RF  Motorola, Inc. 2004 DEVICE DATA For More Information On This Product, Go to: www.freescale.com MW4IC2230MBR1 MW4IC2230GMBR1 1 Freescale Semiconductor, Inc. MAXIMUM RATINGS Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Operating Channel Temperature Input Power Symbol VDSS VGS Tstg TJ Pin Value 65 - 0.5, +8 - 65 to +175 175 20 Unit Vdc Vdc °C °C dBm THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Stage 1 Stage 2 Stage 3 Symbol RθJC Value (1) 10.5 5.1 2.3 Unit °C/W ESD PROTECTION CHARACTERISTICS Freescale Semiconductor, Inc... Test Conditions Human Body Model Machine Model Charge Device Model Class 2 (Minimum) M3 (Minimum) C5 (Minimum) MOISTURE SENSITIVITY LEVEL Test Methodology Per JESD 22 - A113 Rating 3 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA, Pout = 0.4 W Avg., f = 2110 MHz, f = 2170 MHz, Single - carrier W - CDMA. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Peak/Avg. Ratio = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Input Return Loss Adjacent Channel Power Ratio Pout = 0.4 W Avg. Pout = 1.26 W Avg. Stability (10 mW