MW5IC2030MBR1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MW5IC2030M/D The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifiers The MW5IC2030 wideband integrated circuit is designed for base station applications. It uses Motorola’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband On - Chip design makes it usable from 1930 to 1990 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, PHS, CDMA and W - CDMA. Final Application Typical CDMA Performance: VDD = 27 Volts, IDQ1 = 160 mA, IDQ2 = 230 mA, Pout = 5 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Power Gain — 23 dB Drain Efficiency — 20% ACPR @ 885 kHz Offset — - 49 dBc @ 30 kHz Channel Bandwidth Driver Application Typical CDMA Performance: VDD = 27 Volts, IDQ1 = 200 mA, IDQ2 = 550 mA, Pout = 1 Watt Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Power Gain — 24 dB ACPR @ 885 kHz Offset — - 64 dBc @ 30 kHz Channel Bandwidth • On - Chip Matching (50 Ohm Input, >4 Ohm Output) • Integrated Temperature Compensation Capability with Enable/Disable Function • On - Chip Current Mirror gm Reference FET for Self Biasing Application (1) • Integrated ESD Protection • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • Also Available in Gull Wing for Surface Mount • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel VDS1 VRD2 VRG2 RFin VRD1 VDS2/RFout MW5IC2030MBR1 MW5IC2030GMBR1 1930 - 1990 MHz, 30 W, 26 V GSM/GSM EDGE, W - CDMA, PHS RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS Freescale Semiconductor, Inc... CASE 1329 - 09 TO - 272 WB - 16 PLASTIC MW5IC2030MBR1 CASE 1329A - 03 TO - 272 WB - 16 GULL PLASTIC MW5IC2030GMBR1 PIN CONNECTIONS GND VDS1 VRD2 VRG2 GND RFin VRD1 VRG1/VGS1 VGS2 NC GND Quiescent Current Temperature Compensation 1 2 3 4 5 6 7 8 9 10 11 16 15 GND NC 14 VDS2/ RFout VRG1/VGS1 VGS2 13 12 NC GND (Top View) NOTE: Exposed backside flag is source terminal for transistors. Functional Block Diagram (1) Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.motorola.com/semiconductors/rf . Select Documentation/Application Notes - AN1987. REV 2 MOTOROLA RF  Motorola, Inc. 2004 DEVICE DATA For More Information On This Product, Go to: www.freescale.com MW5IC2030MBR1 MW5IC2030GMBR1 1 Freescale Semiconductor, Inc. MAXIMUM RATINGS Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Operating Junction Temperature Input Power Symbol VDSS VGS Tstg TJ Pin Value 65 - 0.5, +15 - 65 to +175 200 20 Unit Vdc Vdc °C °C dBm THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case CDMA Application (Pout = 5 W CW) PHS Application (Pout = 12.6 W CW) Stage 1, 27 Vdc, IDQ = 160 mA Stage 2, 27 Vdc, IDQ = 230 mA Stage 1, 26 Vdc, IDQ = 300 mA Stage 2, 26 Vdc, IDQ = 1300 mA Symbol RθJC 4.89 1.75 4.85 1.61 Value (1) Unit °C/W Freescale Semiconductor, Inc... ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Charge Device Model Class 1B (Minimum) A (Minimum) 3 (Minimum) MOISTURE SENSITIVITY LEVEL Test Methodology Per JESD 22 - A113 Rating 3 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit CDMA FUNCTIONAL TESTS (In Motorola 1.9 GHz Test Fixture, 50 οhm system) VDD = 27 Vdc, IDQ1 = 160 mA, IDQ2 = 230 mA, Pout = 5 W Avg., 1960 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ± 885 kHz Offset. Peak/Avg. = 9.8 dB @ 0.01 Probability on CCDF. Power Gain Drain Efficiency Input Return Loss Adjacent Channel Power Ratio Stability (0 dBm