NH1302A

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ3281A/D Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor The MJ3281A and MJ1302A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency • Gain Complementary: — Gain Linearity from 100 mA to 7 A — High Gain — 60 to 175 — hFE = 45 (Min) @ IC = 8 A • Low Harmonic Distortion • High Safe Operation Area — 1 A/100 V @ 1 sec • High fT — 30 MHz Typical ™ Data Sheet MJ3281A* PNP MJ1302A* *Motorola Preferred Device NPN 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS CASE 1–07 TO–204AA (TO–3) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector–Emitter Voltage — 1.5 V Collector Current — Continuous Collector Current — Peak (1) Base Current — Continuous Total Power Dissipation @ TC = 25°C Derate Above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO VCEX IC IB PD TJ, Tstg Value 200 200 7 200 15 25 1.5 250 1.43 – 65 to + 200 Unit Vdc Vdc Vdc Vdc Adc Adc Watts W/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle