LN60A01ES-LF

LN60A01 600V, Triple N-Channel MOSFET with Common Gate Control The Future of Analog IC Technology DESCRIPTION FEATURES The LN60A01 is a three channel, 600V NChannel, enhancement mode power FET manufactured in MPS's proprietary, highvoltage DMOS technology. • • • • • • This advanced technology has been especially tailored to minimize the on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. This device is well suited for high efficiency switched mode power supplies and active power factor correction. The LN60A01 is available in PDIP8 and SOIC8 package. 600V Breakdown Voltage Three N-Channel MOSFETs One Gate control to All Three FETs Rds(on)=200Ω at Vgs=10V Switching Current>0.1A Fast Switching APPLICATIONS • • • High Efficiency AC/DC Adaptor Offline Switching Power Supply Active Power Factor Correction “MPS” and “The Future of Analog IC Technology” are Registered Trademarks of Monolithic Power Systems, Inc. TYPICAL APPLICATION 400V 400V 400V A B C R1 470k R2 470k R3 470k Gate VCC1 LN60A01EP Rev. 0.91 1/15/2010 VCC2 VCC3 www.MonolithicPower.com MPS Proprietary Information. Unauthorized Photocopy and Duplication Prohibited. © 2010 MPS. All Rights Reserved. 1 LN60A01 – 600V, N-CHANNEL MOSFET ORDERING INFORMATION Part Number* LN60A01EP Part Number** LN60A01ES Package PDIP-8 Package SOIC-8 Free Air Temperature (TA) -20ºC to 85ºC Free Air Temperature (TA) -20ºC to 85ºC Top Marking LN60A01E Top Marking LN60A01E *For RoHS compliant packaging, add suffix –LF (e.g. LN60A01EP–LF) ** For Tape & Reel, add suffix –Z (e.g. LN60A01ES–Z). For RoHS compliant packaging, add suffix –LF (e.g. LN60A01ES–LF–Z) PACKAGE REFERENCE TOP VIEW TOP VIEW S1 1 8 D1 S1 1 8 D1 S2 2 7 D2 S2 2 7 D2 Gate 3 6 D3 Gate 3 6 D3 S3 4 5 GND S3 4 5 GND PDIP-8 ABSOLUTE MAXIMUM RATINGS (1) Drain-Source Voltage VDS .......................... 600V Gate-Source Voltage VGS……………………..15V Continuous Drain Current (1) ID .................. 0.08A Pulsed Drain Current (2) IDM ......................... 0.4A Power Dissipation (1) (2) PD .......................... 1.3W Storage Temperature.............. –55°C to +150°C LN60A01EP Rev. 0.91 1/15/2010 SOIC-8 Recommended Operating Conditions Operating Junct. Temp (TJ)..... –20°C to +125°C Thermal Resistance (3) θJA θJC SOIC8 ........................................90 ... 45... °C/W PDIP8 ....................................105... . 45. .°C/W Notes: 1) Surface Mounted on 1”×1” FR4 Board.. 2) Pulse width limited by maximum junction temperature. 3) Measured on JESD51-7, 4-layer PCB www.MonolithicPower.com MPS Proprietary Information. Unauthorized Photocopy and Duplication Prohibited. © 2010 MPS. All Rights Reserved. 2 LN60A01 – 600V, N-CHANNEL MOSFET ELECTRICAL CHARACTERISTICS TA = +25°C, unless otherwise noted. Parameters Symbol Condition V(BR)DSS VGS=0V, ID=30uA Min Typ Max Units Static Parameter Drain-Source Voltage Breakdown Gate Threshold Voltage Zero Gate Current Voltage Drain Drain-Source On-Resistance 600 VGS(th) VDS=VGS, ID=250uA IDSS VDS=400V, VGS=0V 15 VGS=10V, ID=10mA 190 VGS=5V, ID=10mA 200 rDS(on) 0.8 1.0 V 1.2 V µA Ω Switching Parameter Turn-On Delay Time t(on) Turn-Off Delay Time t(off) VDS=350V, IDS=10mA 50 3000 ns PIN FUNCTIONS Pin Number Pin Name 1 S1 Source 1 2 3 4 5 6 7 8 S2 Gate S3 GND D3 D2 D1 Source 2 Gate Source 3 Ground Drain 3 Drain 2 Drain 1 LN60A01EP Rev. 0.91 1/15/2010 Description www.MonolithicPower.com MPS Proprietary Information. Unauthorized Photocopy and Duplication Prohibited. © 2010 MPS. All Rights Reserved. 3 LN60A01 – 600V, N-CHANNEL MOSFET DEVICE CIRCUIT D1 D2 D3 GND 8 7 6 5 Q1 LN60A01EP Rev. 0.91 1/15/2010 Q2 Q3 1 2 3 4 S1 S2 GATE S3 www.MonolithicPower.com MPS Proprietary Information. Unauthorized Photocopy and Duplication Prohibited. © 2010 MPS. All Rights Reserved. 4 LN60A01 – 600V, N-CHANNEL MOSFET TYPICAL PERFORMANCE CHARACTERISTICS TA =25ºC, unless otherwise noted. RDS_ON vs. VGS 250 VGS_th vs. Temperature IDS=5mA 1.4 VGS_th Voltage (V) 230 210 190 170 150 0 2 4 6 VGS (V) 8 10 IDS=250uA 380 1.2 330 1.0 280 0.8 230 0.6 180 0.4 130 0.2 -50 -20 10 40 70 100 130 Switching ON Switching OFF VDS=300V, IDS=4mA, VGS=5V VDS=300V, IDS=4mA, VGS=5V VGS 5V/div VGS 5V/div VDS 100V/div VDS 100V/div 40ns/div LN60A01EP Rev. 0.91 1/15/2010 RDS_ON vs. Temperature VGS=10V, IDS=10mA 80 -50 -20 10 40 70 100 130 2us/div www.MonolithicPower.com MPS Proprietary Information. Unauthorized Photocopy and Duplication Prohibited. © 2010 MPS. All Rights Reserved. 5 LN60A01 – 600V, N-CHANNEL MOSFET PACKAGE INFORMATION PDIP-8 0.367(9.32) 0.387(9.83) 8 5 0.240(6.10) 0.260(6.60) PIN 1 ID 4 1 TOP VIEW 0.320( 8.13) 0.400(10.16) 0.300(7.62) 0.325(8.26) 0.100(2.54) BSC 0.125(3.18) 0.145(3.68) 0.015(0.38) 0.035(0.89) 0.120(3.05) 0.140(3.56) 0.050(1.27) 0.065(1.65) 0.015(0.38) 0.021(0.53) FRONT VIEW 0.008(0.20) 0.014(0.36) SIDE VIEW NOTE: 1) CONTROL DIMENSION IS IN INCHES. DIMENSION IN BRACKET IS IN MILLIMETERS. 2) PACKAGE LENGTH AND WIDTH DO NOT INCLUDE MOLD FLASH, OR PROTRUSIONS. 3) DRAWING CONFORMS TO JEDEC MS-001, VARIATION BA. 4) DRAWING IS NOT TO SCALE. LN60A01EP Rev. 0.91 1/15/2010 www.MonolithicPower.com MPS Proprietary Information. Unauthorized Photocopy and Duplication Prohibited. © 2010 MPS. All Rights Reserved. 6 LN60A01 – 600V, N-CHANNEL MOSFET PACKAGE INFORMATION SOIC8 NOTICE: The information in this document is subject to change without notice. Please contact MPS for current specifications. Users should warrant and guarantee that third party Intellectual Property rights are not infringed upon when integrating MPS products into any application. MPS will not assume any legal responsibility for any said applications. LN60A01EP Rev. 0.91 1/15/2010 www.MonolithicPower.com MPS Proprietary Information. Unauthorized Photocopy and Duplication Prohibited. © 2010 MPS. All Rights Reserved. 7