MP1907AGQ-P

MP1907 100V, 2.5A, High Frequency Half-bridge Gate Driver The Future of Analog IC Technology DESCRIPTION FEATURES The MP1907 is a high frequency, 100V half bridge N-channel power MOSFET driver. Its low side and high side driver channels are independently controlled and matched with less than 5ns in time delay. Under-voltage lock-out both high side and low side supplies force their outputs low in case of insufficient supply. Both outputs will remain low until a rising edge on either input is detected. The integrated bootstrap diode reduces external component count. • • • • • • • Drives N-channel MOSFET half bridge 100V VBST voltage range Input signal overlap protection On-chip bootstrap diode Typical 20ns propagation delay time Less than 5ns gate drive mismatch Drive 1nF load with 12ns/9ns rise/fall times with 12V VDD TTL compatible input Less than 150μA quiescent current Less than 5μA shutdown current UVLO for both high side and low side In 3×3mm QFN10 Packages • • • • • APPLICATIONS • • • • Battery Powered Hand Tool Telecom half bridge power supplies Avionics DC-DC converters Active-clamp Forward Converters All MPS parts are lead-free and adhere to the RoHS directive. For MPS green status, please visit MPS website under Products, Quality Assurance page. “MPS” and “The Future of Analog IC Technology” are registered trademarks of Monolithic Power Systems, Inc. TYPICAL APPLICATION 3.3V BATT VDD Micro Controller INH 7 INL 8 EN 6 CONTROL 1 Floating Driver Low -side Driver 3 BST 4 DRVH 5 SW 10 DRVL M MP1907 9 VSS MP1907 Rev. 1.2 4/16/2014 www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2014 MPS. All Rights Reserved. 1 MP1907―100V, 2.5A, HIGH FREQUENCY HALF-BRIDGE GATE DRIVER ORDERING INFORMATION Part Number* MP1907GQ Package QFN10 (3 x 3 mm) Top Marking ADE * For Tape & Reel, add suffix –Z (e.g. MP1907GQ–Z); PACKAGE REFERENCE ABSOLUTE MAXIMUM RATINGS (1) Thermal Resistance Supply Voltage (VDD).....................-0.3V to +20V SW Voltage (VSW) .........................-5.0V to 105V BST Voltage (VBST) .......................-0.3V to 110V BST to SW ....................................-0.3V to +18V DRVH to SW .............. -0.3V to (BST-SW) +0.3V DRVL to VSS ...................... -0.3V to (VDD+0.3V) All Other Pins ..................................-0.3V to 20V (2) Continuous Power Dissipation (TA =+25°C) QFN10 (3x3) .............................................. 2.5W Junction Temperature ...............................150°C Lead Temperature ....................................260°C Storage Temperature............... -65°C to +150°C QFN10 (3x3)........................... 50 ...... 12... °C/W Recommended Operating Conditions (3) (4) Supply Voltage (VDD)................. +4.5V to 18V SW Voltage (VSW) .........................-1.0V to 100V SW slew rate......................................