MP1917AGR-Z

MP1917A 100V, 4A, High-Frequency Half-Bridge Gate Driver DESCRIPTION FEATURES The MP1917A is a high-frequency, half-bridge, N-channel power MOSFET driver. Its low-side and high-side driver channels are controlled independently and matched with less than 5ns of time delay. Under-voltage lockout (UVLO) on both the high-side and low-side supplies forces the outputs low in the event that the supply is insufficient. The integrated bootstrap diode reduces the external component count.       The MP1917A is available in a QFN-10 (4mmx4mm) package.     Drives an N-Channel MOSFET Half-Bridge 115V Bootstrap Voltage Range On-Chip Bootstrap Diode Typical Propagation Delay of 20ns Gate Driver Matching of Less than 5ns Drives a 2.2nF Load with 15ns of Rise Time and 12ns of Fall Time at 12V VDD TTL-Compatible Input Quiescent Current of Less than 150µA UVLO for Both High-Side and Low-Side Gate Drivers QFN-10 (4mmx4mm) Package APPLICATIONS      Isolated Brick Power Telecom Half-Bridge Power Supplies Avionics DC/DC Converters Two-Switch Forward Converters Active Clamp Forward Converters All MPS parts are lead-free, halogen free, and adhere to the RoHS directive. For MPS green status, please visit the MPS website under Quality Assurance. “MPS”, the MPS logo, and “Simple, Easy Solutions” are registered trademarks of Monolithic Power Systems, Inc. or its subsidiaries. TYPICAL APPLICATION 12V VDC VDD INH VDD BST BST DRVH DRVH INH SW M SW INL INL DRVL DRVL MOTOR DRIVER VSS VSS MP1917A Rev. 1.0 MonolithicPower.com 7/25/2019 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2019 MPS. All Rights Reserved. 1 MP1917A – 100V, 4A, HIGH-FREQUENCY HALF-BRIDGE GATE DRIVER ORDERING INFORMATION Part Number MP1917AGR* Package QFN-10 (4mmx4mm) Top Marking See Below * For Tape & Reel, add suffix –Z (e.g. MP1917AGR–Z). TOP MARKING MPS: MPS prefix Y: Year code WW: Week code M1917A: First six digits of the part number LLL: Lot number PACKAGE REFERENCE TOP VIEW VDD 1 10 DRVL BST 2 9 DRVH 3 8 INL SW 4 7 INH NC 5 6 NC VSS EXPOSED PAD ON BACKSIDE QFN-10 (4mmx4mm) MP1917A Rev. 1.0 MonolithicPower.com 7/25/2019 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2019 MPS. All Rights Reserved. 2 MP1917A – 100V, 4A, HIGH-FREQUENCY HALF-BRIDGE GATE DRIVER ABSOLUTE MAXIMUM RATINGS (1) Supply voltage (VDD) ...................... -0.3V to 18V SW voltage (VSW) ................................................ .......................... -1V (-18V for < 100nS) to 105V BST voltage (VBST) ....................... -0.3V to 115V BST to SW ..................................... -0.3V to 18V DRVH to SW ........................................................ .... -0.3V (-2V for < 100nS) to (BST - SW) + 0.3V DRVL to VSS ....................................................... ............. -0.3V (-2V for < 100nS) to (VDD + 0.3V) All other pins ..................... -0.3V to (VDD + 0.3V) Continuous power dissipation (TA = 25°C) (2) QFN-10 (4mmx4mm) ................................ 2.66W Junction temperature ................................ 150°C Lead temperature..................................... 260°C Storage temperature ................... -65°C to 150°C Thermal Resistance (4) θJA θJC QFN-10 (4mmx4mm) .............. 47 ........ 7 .... °C/W NOTES: 1) Exceeding these ratings may damage the device. 2) The maximum allowable power dissipation is a function of the maximum junction temperature TJ (MAX), the junction-toambient thermal resistance θJA, and the ambient temperature TA. The maximum allowable continuous power dissipation at any ambient temperature is calculated by PD (MAX) = (TJ (MAX) - TA) / θJA. Exceeding the maximum allowable power dissipation produces an excessive die temperature, causing the regulator to go into thermal shutdown. Internal thermal shutdown circuitry protects the device from permanent damage. 3) The device is not guaranteed to function outside of its operating conditions. 4) Measured on JESD51-7, 4-layer PCB. Recommended Operating Conditions (3) Supply voltage (VDD) ..................... 8.0V to 15.0V SW voltage (VSW) ........................... -1.0V to 98V SW slew rate ..........................................