MP2676
Li-Ion Charger Protection IC
With Integrated P-MOSFET
The Future of Analog IC Technology
DESCRIPTION
FEATURES
The MP2676 is a highly integrated circuit
designed to provide complete Li-ion battery
charger protection against input over voltage,
input over current and battery over voltage. The
IC continuously monitors the input voltage, the
input current and the battery voltage, when any
of the monitored parameters exceeds its
threshold, the IC immediately turns off the
internal N-channel MOSFET to remove the
power from the charge system before any
damage occurs. Moreover, all protections also
have blanking times against false triggering due
to voltage spikes or current transients. The IC
also features thermal shutdown protection, if
the temperature exceeds 140ºC, MP2676 will
turn off the internal MOSFET bridging ACIN and
CHRIN.
MP2676 integrates a P-channel MOSFET with
the body diode reverse protection to replace the
external P-channel MOSFET and blocking
diode for charge function of portable devices
with PMIC (Power Management IC). The above
features and small package make the MP2676
an ideal part for portable applications.
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No External Blocking Diode Requiring
Input Over Voltage Protection in 1µs
Input Over Current Protection
Battery Over Voltage Protection
Integrated Charging MOSFET
Temperature Monitoring and Protection
High Immunity of False Triggering under
Startup, Transients
APPLICATIONS
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Cell Phones
MP3 Players
Smart Phones
PDAs
Digital Cameras
Desktop Chargers
“MPS” and “The Future of Analog IC Technology” are Registered Trademarks of
Monolithic Power Systems, Inc.
TYPICAL APPLICATION
MP2676 Rev. 0.91
12/7/2010
www.MonolithicPower.com
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© 2010 MPS. All Rights Reserved.
1
MP2676 –LI-ION CHARGER PROTECTION IC WITH INTEGRATED P-MOSFET
ORDERING INFORMATION
Part Number*
Package
Top Marking
Free Air Temperature (TA)
MP2676EG
QFN8 (2mm x 2mm)
8Q
-20°C to +85°C
* For Tape & Reel, add suffix –Z (e.g. MP2676EG–Z)
For RoHS compliant packaging, add suffix –LF (e.g. MP2676EG–LF–Z)
PACKAGE REFERENCE
TOP VIEW
ACIN
1
8
OUT
ACIN
2
7
OUT
GND
3
6
CHRIN
VBAT
4
5
GATDRV
ABSOLUTE MAXIMUM RATINGS (1)
Thermal Resistance
ACIN to GND ................................... -0.3V to 30V
OUT, GATDRV and CHRIN to GND
.......................................................... -0.3V to 7V
VBAT ............................................. -0.3V to 5.5V
Continuous Power Dissipation (TA = +25°C)
QFN8 (2mm x 2mm) .............. 100 ......55... °C/W
(2)
QFN8 (2mm x 2mm) ................................ 1.25W
Junction Temperature ...............................150°C
Storage Temperature ............... -65°C to +150°C
Lead Temperature ...................................260°C
Recommended Operating Conditions (3)
Supply Voltage VIN .......................... 4.3V to 5.5V
Operating Junct. Temp (TJ)...... -20°C to +125°C
MP2676 Rev. 0.91
12/7/2010
(4)
θJA
θJC
Notes:
1) Exceeding these ratings may damage the device.
2) The maximum allowable power dissipation is a function of the
maximum junction temperature TJ(MAX), the junction-toambient thermal resistance θJA, and the ambient temperature
TA. The maximum allowable continuous power dissipation at
any ambient temperature is calculated by PD(MAX)=(TJ(MAX)TA)/θJA. Exceeding the maximum allowable power dissipation
will cause excessive die temperature, and the regulator will go
into thermal shutdown. Internal thermal shutdown circuitry
protects the device from permanent damage.
3) The device is not guaranteed to function outside of its
operating conditions.
4) Measured on JESD51-7, 4-layer PCB.
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© 2010 MPS. All Rights Reserved.
2
MP2676 –LI-ION CHARGER PROTECTION IC WITH INTEGRATED P-MOSFET
ELECTRICAL CHARACTERISTICS
Typical values at VIN = 5V, TA = +25°C, unless otherwise noted.
Parameter
Rising VIN Threshold
POR Hysteresis
Input Power On Blanking time
Operating Current
Symbol Condition
UVLO
Min
2.5
TREC(vout) VACIN Rising to VOUT Rising
IIN
No Load on OUT and CHRIN pin
ACIN Float,
GATDRV = OUT = 7V
Reverse Current
Input Over Voltage Protection
VOVP
(OVP)
Input OVP Hysteresis
Input OVP Falling Threshold
Input OVP Propagation Delay
IOVP Recovery Time
TREC(IOVP)
Over Current Protection
IOCP
OCP Blanking Time
Battery Over Voltage Protection
Threshold
BOVP Hysteresis
BOVP Falling Threshold
Battery OVP Blanking Time
5.8
Typ
2.65
130
10
Max
2.8
Units
V
mV
ms
500
600
µA
1
10
µA
6.0
6.25
V
35
5.75
1
mV
V
µs
ms
A
µs
1.3
10
1.6
180
2
4.25
4.35
4.475
V
4
240
4.12
200
4.2
mV
V
µs
OTP Rising Threshold
140
°C
OTP Hysteresis
20
°C
mΩ
ACIN to OUT On Resistance
MP2676 Rev. 0.91
12/7/2010
RON
IIN=500mA, 4.3V < ACIN < 5.5V
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MPS Proprietary Information. Unauthorized Photocopy and Duplication Prohibited.
© 2010 MPS. All Rights Reserved.
450
3
MP2676 –LI-ION CHARGER PROTECTION IC WITH INTEGRATED P-MOSFET
PIN FUNCTIONS
Pin #
Name
Description
1, 2
3
ACIN
GND
4
VBAT
5
6
7, 8
GATDRV
CHRIN
OUT
Input Power Source, ACIN can withstand 30V input surge.
System Ground
Battery Voltage Monitoring Input. Connect this pin to the battery pack positive terminal
via an isolation resistor
External control pin for controlling the P-channel MOSFET by charge controller
Voltage is equal to ACIN if ACIN is in power good range.
Output Pin. Connect this pin to the battery pack positive terminal via a sense resistor.
MP2676 Rev. 0.91
12/7/2010
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© 2010 MPS. All Rights Reserved.
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MP2676 –LI-ION CHARGER PROTECTION IC WITH INTEGRATED P-MOSFET
TYPICAL PERFORMANCE CHARACTERISTICS
VIN=5V, RVB=200kΩ, GATDRV connected to GND, TA=25ºC, unless otherwise noted.
Supply Current vs. VIN
Breakdown Voltage
600
1200
500
1000
400
800
300
600
200
400
100
200
Output Reverse Current
vs. VOUT
2.0
No Input,VBAT=GND, VOUT=1V to 4.2V
1.5
1.0
0.5
0
0
1
2
3
4
5
0
5
6
INPUT VOLTAGE(V)
530
10
15
20
25
30
35
40
0.0
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
INPUT VOLTAGE(V)
ACIN to OUT On Resistance
vs. VIN
OUTPUT VOLTAGE(V)
Power On through VIN
Power Down through VIN
No load at OUT and CHRIN
No load at OUT and CHRIN
520
510
700mA
500
490
480
470
460
500mA
450
440
4.3
4.5
4.7
4.9
5.1
5.3
VIN
2V/div.
VIN
2V/div.
CHRIN
2V/div.
VOUT
2V/div.
IOUT
500mA/div.
CHRIN
2V/div.
VOUT
2V/div.
IOUT
500mA/div.
5.5
INPUT VOLTAGE(V)
Input OVP
VIN Steps from 5V to 7V Slowly,
GATDRV=CHRIN
VIN
2V/div.
CHRIN
2V/div.
VOUT
2V/div.
VIN
2V/div.
CHRIN
2V/div.
VOUT
2V/div.
IOUT
500mA/div.
IOUT
500mA/div.
MP2676 Rev. 0.91
12/7/2010
VIN
2V/div.
CHRIN
2V/div.
VOUT
2V/div.
IOUT
200mA/div.
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© 2010 MPS. All Rights Reserved.
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MP2676 –LI-ION CHARGER PROTECTION IC WITH INTEGRATED P-MOSFET
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
VIN=5V, RVB=200kΩ, GATDRV connected to GND, TA=25ºC, unless otherwise noted.
Input OVP
Input OVP Recovery
Input OVP Start Up
VIN Steps from 5V to 20V Quickly,
GATDRV=CHRIN
VIN Drops from 7V to 5V Slowly,
GATDRV=CHRIN
VIN
2V/div.
CHRIN
2V/div.
VOUT
1V/div.
IOUT
200mA/div.
VIN
5V/div.
CHRIN
2V/div.
4ms/div.
10ms/div.
Battery OVP Blanking Time
Battery OVP Recovery
VBAT Steps from 3.5V to 4.5V
VBAT Drops from 4.5V to 3.5V
VIN
2V/div.
VIN
2V/div.
VBAT
1V/div.
CHRIN
2V/div.
VIN=7V, GATDRV=CHRIN
VIN
2V/div.
CHRIN
2V/div.
VOUT
2V/div.
IOUT
200mA/div.
VIN
2V/div.
CHRIN
2V/div.
VBAT
1V/div.
VBAT
1V/div.
CHRIN
2V/div.
2ms/div.
IOUT
200mA/div.
VIN
2V/div.
CHRIN
2V/div.
VOUT
2V/div.
VOUT
2V/div.
VOUT
2V/div.
IOUT
1A/div.
IOUT
1A/div.
IOUT
1A/div.
MP2676 Rev. 0.91
12/7/2010
100ms/div.
VIN
2V/div.
CHRIN
2V/div.
VIN
2V/div.
CHRIN
2V/div.
200ms/div.
4ms/div.
20ms/div.
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MPS Proprietary Information. Unauthorized Photocopy and Duplication Prohibited.
© 2010 MPS. All Rights Reserved.
6
MP2676 –LI-ION CHARGER PROTECTION IC WITH INTEGRATED P-MOSFET
BLOCK DIAGRAM
ACIN
OUT
POR
CP3
GND
CP1
CHRIN
Control
Logic
CP2
GATDRV
VBAT
Thermal
Shutdown
Figure 1—Function Block Diagram
MP2676 Rev. 0.91
12/7/2010
www.MonolithicPower.com
MPS Proprietary Information. Unauthorized Photocopy and Duplication Prohibited.
© 2010 MPS. All Rights Reserved.
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MP2676 –LI-ION CHARGER PROTECTION IC WITH INTEGRATED P-MOSFET
OPERATION
The MP2676 is a highly integrated circuit
designed to provide complete Li-ion battery
charger protection against input over voltage,
input over current and battery over voltage. The
IC continuously monitors the input voltage, the
input current and the battery voltage, when any
of the monitored parameters exceeds its
threshold, the IC immediately turns off the
internal N-channel MOSFET to remove the
power from the charge system before any
damage occurs. Moreover, all protections also
have blanking times against false triggering due
to voltage spikes or current transients. The IC
also features thermal shutdown protection, if
the temperature exceeds 140ºC, MP2676 will
turn off the internal MOSFET bridging ACIN and
CHRIN.
MP2676 integrates a P-channel MOSFET with
the body diode reverse protection to replace the
external P-channel MOSFET and block diode
for charge function of portable devices with
PMIC (Power Management IC).
Power Up
The MP2676 has a power-on reset (POR)
threshold of 2.65V with a built-in hysteresis of
130mV. When the input voltage is below the
POR threshold, the internal N-channel
MOSFET is off. The IC resets itself and waits
for about 10ms after the input voltage exceeds
the POR threshold, then, if the input voltage
and battery voltage are safe, the IC begins to
soft-start the internal N-channel MOSFET. The
10ms delay allows any transient at the input
during a hot insertion of the power supply to
settle down before the IC starts to operate. The
soft-start slowly turns on the N-channel
MOSFET to reduce the inrush current as well
as the input voltage drop during the transition.
Input Over-voltage Protection (OVP)
The input voltage is continuously monitored by
the internal comparator CP1 in the block
diagram (Figure 1), the OVP threshold is set by
an internal resistive divider and an accurate
reference generated by the IC itself. The
protection threshold is set to 6V. When the
input voltage exceeds the threshold, the CP1
outputs a logic signal to turn off the N-channel
MP2676 Rev. 0.91
12/7/2010
MOSFET within 1µs to prevent the high input
voltage from damaging the electronics in the
handheld system. The hysteresis of the input
OVP threshold is given in the Electrical
Characteristic. When the input over-voltage
condition is removed, the N-channel MOSFET
is turned on again by running through the softstart. Because of the 10ms delay before the
soft-start, the output is never enabled if the
input rises above the OVP threshold within
10ms.
Battery Over-voltage Protection (BOVP)
The battery voltage OVP threshold is internally
set to 4.35V, and the threshold has 240mV
built-in hysteresis. When the battery voltage
exceeds the battery OVP threshold, the internal
comparator CP2 has a built-in 200µs blanking
time to prevent any transient voltages from
triggering the BOVP. If the BOVP situation still
exists after the blanking time, the N-channel
MOSFET is turned off. There is an internal 4-bit
binary counter monitoring the occurrences of
the BOVP event. If the BOVP event occurs 16
times, the N-channel MOSFET is turned off
permanently. Recycling the input power will
reset the counter and restart the MP2676.
Over-current Protection (OCP)
The current through the N-channel MOSFET is
limited to prevent charging the battery with an
excessive current. The current limit threshold is
preset to 1.6A. The OCP comparator CP3 has a
built-in 180µs delay to prevent false triggering
by transient signals. When OCP happened,
VOUT shuts down and takes 60ms delay to soft
start as the OCP condition is removed. The
OCP function also has a 4-bit binary counter
that accumulates the occurrences of OCP
event. When the total count reaches 16, the Nchannel MOSFET is turned off permanently
unless the input power is recycled.
Thermal Protection
The MP2676 monitors its own die temperature
to prevent thermal failures. When the internal
temperature reaches 140°C, the internal Nchannel MOSFET is turned off. The IC does not
resume operation until the internal temperature
drops below 120°C
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© 2010 MPS. All Rights Reserved.
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MP2676 –LI-ION CHARGER PROTECTION IC WITH INTEGRATED P-MOSFET
APPLICATION INFORMATION
For safe and effective charging, some strict
requirements have to be satisfied during
charging Li-ion batteries such as high precise
power source for charging (4.2V±50mV), the
accuracy should be higher than 1%. For highly
used capacity, the voltage of the battery should
be charged to the value (4.2V) as possible as
could. Otherwise, the performance and the life
of the battery suffers overcharge. Additionally,
the pre-charge for depleted batteries, charge
voltage, charge current, as well as the
temperature detection and protection, are
required for linear battery chargers. MP2676
provides full protection to guarantee the safety
of the charge system with its perfect four
protection functions: OVP, BOVP, OCP and
OTP.
An internal P-channel MOSFET is integrated to
the MP2676, which can be controlled by the
external control signal from PMIC to achieve
charging function including CC, CV charge
mode and so on. Particularly, connecting
GATDRV to GND can turn on the P-channel
MOSFET while connecting GATDRV to CHRIN
can fully turn off the P-channel MOSFET.
CIN and COUT Selection
The input capacitor (CIN) is for decoupling and
serves an important role. Higher value of CIN
reduces the voltage undershoot or overshoot
during transients. The AC adapter is inserted
live (hot insertion) and sudden step down of the
current in the power MOSFET will cause the
input voltage overshoot.
The output of the MP2676 and the input of the
charge circuit typically share one decoupling
capacitor.
RVB Selection
It is strongly recommended that the battery not
be tied directly to the VBAT pin of the device,
as under some failure modes of the IC, the
voltage at the ACIN pin may appear on the
VBAT pin. RVB limits the current from the VBAT
pin to the battery terminal in case the MP2676
fails. The recommended value is between
200kΩ to 1MΩ. With 200kΩ resistance, during
the failure operation, assuming the VBAT pin
voltage is 30V and the battery voltage is 4.2V.
The worst case the current flowing from the
VBAT pin to the charger output is,
(30V − 4.2V)/200kΩ = 130µA,
Such small current can be easily absorbed by
the bias current of other components.
Increasing the RVB value reduces the worst
case current, but at the same time increases
the error for the 4.35V battery OVP threshold.
As the typical VBAT pin leakage current is
20nA, the error of the battery OVP threshold
can be calculated as 4.35V+20nA×RVB. With
the 200kΩ resistor, the worst-case additional
error is 4mV and with a 1MΩ resistor, the worstcase additional error is 20mV.
During an input OVP, the N-channel MOSFET
is turned off in less than 1µs and can lead to
significant overshoot. Higher capacitance of CIN
reduces this type of overshoot. However, the
overshoot caused by a hot insertion is not very
dependent on the decoupling capacitance
value. Usually, the input decoupling capacitor is
recommended to use a dielectric ceramic
capacitor with a value between 1µF to 4.7µF.
MP2676 Rev. 0.91
12/7/2010
www.MonolithicPower.com
MPS Proprietary Information. Unauthorized Photocopy and Duplication Prohibited.
© 2010 MPS. All Rights Reserved.
9
MP2676 –LI-ION CHARGER PROTECTION IC WITH INTEGRATED P-MOSFET
PACKAGE INFORMATION
QFN8 (2mmx2mm)
1.90
2.10
PIN 1 ID
MARKING
0.20
0.30
1.90
2.10
PIN 1 ID
INDEX AREA
0.35
0.45
0.30
0.40
PIN 1 ID
0.10X45º TYP.
8
1
5
4
0.50
BSC
TOP VIEW
BOTTOM VIEW
0.80
1.00
0.20 REF
0.00
0.05
SIDE VIEW
NOTE:
1.90
0.70
0.25
0.75
0.25
1) ALL DIMENSIONS ARE IN MILLIMETERS.
2) EXPOSED PADDLE SIZE DOES NOT INCLUDE MOLD FLASH.
3) LEAD COPLANARITY SHALL BE 0.10 MILLIMETER MAX.
4) JEDEC REFERENCE IS MO-220, VARIATION VCCD.
5) DRAWING IS NOT TO SCALE.
0.50
RECOMMENDED LAND PATTERN
NOTICE: The information in this document is subject to change without notice. Please contact MPS for current specifications.
Users should warrant and guarantee that third party Intellectual Property rights are not infringed upon when integrating MPS
products into any application. MPS will not assume any legal responsibility for any said applications.
MP2676 Rev. 0.91
12/7/2010
www.MonolithicPower.com
MPS Proprietary Information. Unauthorized Photocopy and Duplication Prohibited.
© 2010 MPS. All Rights Reserved.
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