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MP6907GS-Z

MP6907GS-Z

  • 厂商:

    MPS(美国芯源)

  • 封装:

    SOIC8_150MIL

  • 描述:

    FAST TURN-OFF, INTELLIGENT RECTI

  • 数据手册
  • 价格&库存
MP6907GS-Z 数据手册
MP6907 Fast Turn-off Flyback Synchronous Rectifier that Supports CCM, DCM and QR Operation Modes DESCRIPTION FEATURES The MP6907 is a low-drop diode emulator controller IC that, when combined with an external MOSFET, can replace Schottky diodes in high-efficiency flyback converters. The MP6907 regulates the forward drop of an external switch to about 70mV, which switches off once the voltage becomes negative.      The MP6907 provides a SYNC interface to receive an external signal to shut down the gate driver for reliable continuous conduction mode (CCM) operation. A programmable light-load sleep mode can reduce the IC’s quiescent current to ~150μA.     The MP6907 is available in compact SOIC8 and TSOT23-6 packages.  Works with 12V Standard and 5V Logic Level MOSFETS Compatible with Energy Star 1W Standby Requirements Fast Turn-Off Total Delay of 25ns 4.2V~35V Wide VDD Operating Range ~150μA Quiescent Current in Light-Load Mode(1) Supports CCM, DCM, and Quasi-Resonant Operation SYNC Interface for CCM Operation Supports High-Side and Low-Side Rectification Power Savings of up to 1.5W in a Typical Notebook Adapter Available in SOIC8 and TSOT23-6 Packages APPLICATIONS     Industrial Power Systems Distributed Power Systems Battery Powered Systems Flyback Converters All MPS parts are lead-free, halogen-free, and adhere to the RoHS directive. For MPS green status, please visit the MPS website under Quality Assurance. “MPS” and “The Future of Analog IC Technology” are registered trademarks of Monolithic Power Systems, Inc. NOTE: 1) Related issued patent: US Patent US8,067,973; US8,400,790. CN Patent ZL201010504140.4; ZL200910059751.X. Other patents pending. TYPICAL APPLICATION C1 4 2 VDD VD SYNC LL 3 VSS 5 R2 R1 8 MP6907 Rev. 1.02 2/7/2017 VG C2 PGND 1 EN MP6907 7 6 C3 www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2017 MPS. All Rights Reserved. 1 MP6907 – FAST TURN-OFF FLYBACK SYNCHRONOUS RECTIFIER ORDERING INFORMATION Part Number* MP6907GS MP6907GJ Package SOIC8 TSOT23-6 Top Marking See Below See Below * For Tape & Reel, add suffix –Z (e.g. MP6907GS–Z) * For Tape & Reel, add suffix –Z (e.g. MP6907GJ–Z) TOP MARKING (MP6907GS) MP6907: Part number LLLLLLLL: Lot number MPS: MPS prefix Y: Year code WW: Week code TOP MARKING (MP6907GJ) ATP: Product code of MP6907GJ Y: Year code MP6907 Rev. 1.02 2/7/2017 www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2017 MPS. All Rights Reserved. 2 MP6907 – FAST TURN-OFF FLYBACK SYNCHRONOUS RECTIFIER PACKAGE REFERENCE TOP VIEW PGND 1 EN 2 MP6907 TOP VIEW 8 VG 7 SYNC PGND LL 3 VD 4 6 VDD 5 VSS SOIC8 ABSOLUTE MAXIMUM RATINGS (1) VDD to VSS ........................... -0.3V to +38V PGND to VSS ....................... -0.3V to +0.3V VG to VSS ............................. -0.3V to +20V VD to VSS .............................. -1V to +180V SYNC, LL, EN to VSS........... -0.3V to +6.5V Continuous power dissipation (TA = +25°C) (2) SOIC8 .................................................. 1.4W Junction temperature ......................... 150°C Lead temperature (solder) ................. 260°C Storage temperature .......... -55°C to +150°C Recommended Operation Conditions (3) VDD to VSS ...............................4.2V to 35V Maximum junction temp. (TJ) ........... +125°C MP6907 Rev. 1.02 2/7/2017 6 VG 5 VSS 4 VDD MP6907 LL SOIC8 1 2 TSOT23-6 VD 3 TSOT23-6 Thermal Resistance (4) θJA θJC SOIC8............................... 90 ...... 45 ... °C/W TSOT23-6........................ 220 .... 110 .. °C/W NOTES: 1) Exceeding these ratings may damage the device. 2) The maximum allowable power dissipation is a function of the maximum junction temperature TJ(MAX), the junction-toambient thermal resistance θJA, and the ambient temperature TA. The maximum allowable continuous power dissipation at any ambient temperature is calculated by PD(MAX)=(TJ(MAX)-TA)/θJA. Exceeding the maximum allowable power dissipation produces an excessive die temperature, causing the regulator to go into thermal shutdown. Internal thermal shutdown circuitry protects the device from permanent damage. 3) The device is not guaranteed to function outside of its operating conditions. 4) Measured on JESD51-7, 4-layer PCB. www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2017 MPS. All Rights Reserved. 3 MP6907 – FAST TURN-OFF FLYBACK SYNCHRONOUS RECTIFIER ELECTRICAL CHARACTERISTICS VDD = 12V, -40°C ≤ TJ ≤ +125°C, unless otherwise noted. Parameter VDD voltage range VDD UVLO rising VDD UVLO hysteresis Symbol Conditions Operating current ICC Quiescent current IQ Shutdown current Light-load mode current Thermal shutdown (5) Thermal shutdown hysteresis (5) Enable UVLO rising Enable UVLO hysteresis Internal pull-up current on EN Control Circuitry Section VSS - VD forward voltage Turn-off threshold (VSS - VD) CLOAD = 4.7nF, FSW = 100kHz VSS - VD = 0.5V VDD = 4V, EN = 0V VDD = 20V, EN = 0V VDD = 4V, LL = 0V VDD = 20V, LL = 0V Typ 3.97 0.185 Max 35 4.2 0.24 Units V V V 8.5 10 mA 2.5 105 120 3.2 150 200 400 450 210 mA 155 150 10 1.74 0.27 12 VEN-R 1.4 0.1 Vfwd 48 5 65 15 60 85 0.85 1.55 160 1.7 2.12 TDon TDon Turn-on delay Input bias current on VD Turn-on blanking time Turn-off blanking time (5) Turn-off blanking VDS threshold Turn-off threshold on SYNC Internal pull-down current on SYNC Light-load enter SYNC duration Light-load enter pulse width Light-load enter pulse width hysteresis Gate disable threshold on LL Turn-on threshold (VDS) Gate Driver Section VG (low) Min 4.2 3.7 0.13 TB_ON TB_OFF VB_OFF VSYN CLOAD = 4.7nF, VGS = 2V CLOAD = 10nF, VGS = 2V VD = 180V CLOAD = 4.7nF CLOAD = 4.7nF 1.2 1.8 VSYNC = 5V TSYN TLL RLL = 100kΩ TLL-H RLL = 100kΩ VLL_DIS VLL-DS VDD = 12V VG (high) VG-L VG-H SYNC turn-off propagation delay Turn-off propagation delay TDoff TDoff VD = VSS VD = VSS, CLOAD = 4.7nF, RGATE = 0Ω, VGS = 2V VD = VSS, CLOAD = 10nF, RGATE = 0Ω, VGS = 2V 82 28 105 150 1 2.35 µA °C °C V V µA 2.2 2.5 mV mV ns ns µA µs ns V V 10 15 µA 95 1.95 125 2.5 µs µs 0.25 0.1 -320 0.2 -220 10 11.7 VDD 45 Turn-off total delay Maximum source current (5) Pull-down impedance ILOAD = 1mA VDD > 10V VDD ≤ 10V 70 1.4 2.1 0.45 21 µA µs 0.3 -120 V mV 0.1 13 V V 90 ns 15 ns 40 80 ns 50 100 ns 0.5 0.8 1.6 A Ω NOTE: 5) Guaranteed by characterization or design. MP6907 Rev. 1.02 2/7/2017 www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2017 MPS. All Rights Reserved. 4 MP6907 – FAST TURN-OFF FLYBACK SYNCHRONOUS RECTIFIER PIN FUNCTIONS Pin # Pin # (SOIC8) (TSOT23-6) Name Description Power ground. PGND is the return for the driver switch. Enable. Active high. 1 2 1 - PGND EN 3 2 LL 4 5 3 5 VD VSS 6 4 VDD 7 - SYNC 8 6 VG MP6907 Rev. 1.02 2/7/2017 Light-load timing setting. Connect a resistor to LL to set the light load timing. If LL is not left open, the IC will not enter light-load mode. Pull LL low to disable the gate driver. FET drain voltage sense. Ground. VSS is also used as a reference for VD. Supply voltage. Interface for external signal control. Pull SYNC high to shut down the gate driver immediately. Gate driver output. www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2017 MPS. All Rights Reserved. 5 MP6907 – FAST TURN-OFF FLYBACK SYNCHRONOUS RECTIFIER TYPICAL PERFORMANCE CHARACTERISTICS VDD = 12V, unless otherwise noted. MP6907 Rev. 1.02 2/7/2017 www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2017 MPS. All Rights Reserved. 6 MP6907 – FAST TURN-OFF FLYBACK SYNCHRONOUS RECTIFIER TYPICAL PERFORMANCE CHARACTERISTICS (continued) VDD = 12V, unless otherwise noted. MP6907 Rev. 1.02 2/7/2017 www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2017 MPS. All Rights Reserved. 7 MP6907 – FAST TURN-OFF FLYBACK SYNCHRONOUS RECTIFIER TYPICAL PERFORMANCE CHARACTERISTICS (continued) VDD = 12V, unless otherwise noted. NOTE: 6) See Figure 20 for the test circuit. MP6907 Rev. 1.02 2/7/2017 www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2017 MPS. All Rights Reserved. 8 MP6907 – FAST TURN-OFF FLYBACK SYNCHRONOUS RECTIFIER BLOCK DIAGRAM LL VDD Power Management Logic EN VD VDD Protection Switcher Control Circuitry Driver VG VSS SYNC PGND Figure 1: Functional Block Diagram MP6907 Rev. 1.02 2/7/2017 www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2017 MPS. All Rights Reserved. 9 MP6907 – FAST TURN-OFF FLYBACK SYNCHRONOUS RECTIFIER OPERATION The MP6907 supports flyback converter operation in continuous conduction mode (CCM), discontinuous conduction mode (DCM), and quasi-resonant mode. The control circuitry controls the gate in forward mode and turns the gate off when the MOSFET current is fairly low. VD Clamp Because VD can rise as high as 180V, a highvoltage JFET is used at the input. To avoid excessive currents when VG drops below -0.7V, a 1kΩ resistor is recommended between VD and the drain of the external MOSFET. Under-Voltage Lockout (UVLO) When VDD is below the 4.2V UVLO threshold, the MP6907 enters sleep mode, and VG remains at a low level. Enable (EN) If EN is pulled low, the MP6907 is in shutdown mode, which consumes ~150μA of shutdown current. If EN is pulled high during the rectification cycle, the gate driver will not start until the next rectification cycle begins (see Figure 2). Turn-On Blanking The control circuitry contains a blanking function. When the MOSFET turns on, the control circuit ensures that the on state lasts for a specific period of time. The turn on blanking time is ~1.6μs, during which the turn-off threshold is blanked (see Figure 3). Conduction Phase When VDS rises above the forward voltage drop (-70mV) according to the decrease of the switching current, the MP6907 pulls down the gate voltage level to make the on resistance of the synchronous MOSFET larger to ease the rise of VDS. VDS 2V -15mV -70mV Driver begin to be pulled down VGS Driver turn off 2V ~1.6μs VDS Turn On Delay Turn On Blanking Turn Off Turn Off Delay Blanking Figure 3: Turn On/Off Timing Diagram VGS Will not start gate driver until next cycle EN Figure 2: EN Control Scheme Thermal Shutdown If the junction temperature of the chip exceeds 150°C, VG is pulled low, and the MP6907 stops switching. The MP6907 resumes normal operation after the junction temperature drops to 140°C. Turn-On Phase When the switch current flows through the body diode of the MOSFET, there is negative VDS (VD-VSS) across the MOSFET. The VDS is much lower than the forward voltage drop of the control circuitry (-70mV), which then turns on the MOSFET after a turn-on delay (see Figure 3). MP6907 Rev. 1.02 2/7/2017 With this control scheme, VDS is adjusted to be around -70mV, even when the current through the MOSFET is fairly low. The function keeps the driver voltage at a very low level when the synchronous MOSFET is turned off, which boosts the turn-off speed. Turn-Off Phase When VDS rises to trigger the turn off threshold (-15mV), the gate voltage is pulled to zero after a very short turn-off delay (see Figure 3). SYNC Turn-Off for CCM Operation An external turn-off signal can be applied on SYNC to turn off the gate driver signal, which can provide a more reliable operation in CCM. A rising edge that exceeds 2V applied on SYNC turns off the gate driver signal immediately (see Figure 4). www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2017 MPS. All Rights Reserved. 10 MP6907 – FAST TURN-OFF FLYBACK SYNCHRONOUS RECTIFIER The gate driver of the MP6907 remains low for as long as the SYNC voltage is high. VDS 0mV The light-load enter time (TLL) is programmable by connecting a resistor (RLL) to LL. By monitoring the LL current, TLL is set. The LL voltage remains at ~2V internally. Calculate TLL with Equation (1): -70mV TLL  RLL (k )  ISD VGS Driver turn off by SYNC signal SYNC Figure 4: SYNC Turn-Off for CCM Turn-Off Blanking After the gate driver is pulled to zero by VDS reaching the turn-off threshold (-15mV), a turnoff blanking time is applied, during which the gate driver signal is latched off. The turn-off blanking is removed when VDS rises above 2V (see Figure 3) Light-Load Latch-Off Function The gate driver of the MP6907 is latched off to save driver loss and improve efficiency during light-load condition. When the synchronous MOSFET conducting period stays lower than TLL for longer than the light-load enter delay (TLL-Delay), the MP6907 enters light-load mode and latches off the gate driver (see Figure 5). The synchronous MOSFET conducting period lasts from the time the gate driver turns on to when VGS drops below 1V (VLL-GS). Normal Mode 1.95s 100k  (1) During light-load mode, the MP6907 monitors the synchronous MOSFET body diode conducting period by sensing the time duration when VDS is below -250mV (VLL_DS). If it is longer than TLL + TLL-H (the light-load enter pulse-width hysteresis), light-load mode ends, and the gate driver is unlatched to restart synchronous rectification (see Figure 6). Light Load Mode tLL+tLL-H tLL+tLL-H tLL+tLL-H tLL+tLL-H Secondary Side Current Figure 6: MP6907 Exiting Light-Load Mode The MP6907 also enters light-load mode when the SYNC voltage is pulled high (>2V) for more than 100μs. Light-load mode ends once the SYNC voltage is pulled low (see Figure 7). Normal Mode Light Load Mode Normal Mode 100us Light Load Mode SYNC TLL-dELAY tLL tLL tLL Figure 7: Light-Load Mode Controlled by SYNC Secondary Side Current Figure 5: MP6907 Entering Light-Load Mode MP6907 Rev. 1.02 2/7/2017 If light-load mode ends during the rectification cycle, the gate driver signal will not appear until the next rectification cycle begins (see Figure 8) www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2017 MPS. All Rights Reserved. 11 MP6907 – FAST TURN-OFF FLYBACK SYNCHRONOUS RECTIFIER VDS R4 6 4 VDD VD D1 2 EN VGS C1 MP6907 PGND LL 7 3 C3 R3 SYNC R1 Will not start gate driver until next cycle C2 1 8 5 VG VSS R2 Light Load Mode Normal Mode Figure 8: Gate Driver Starts after Exiting LightLoad Mode Typical System Implementations Figure 9 shows the typical system implementation for the IC power supply directly derived from the output voltage, which is available in low-side rectification. Figure 10: IC Power Derived from the Auxiliary Winding in Low-Side Rectification C1 R1 R2 8 C3 3 R3 VG VD MP6907 LL 5 VSS D1 1 R4 EN SYNC PGND 4 2 7 VDD 6 C2 C1 4 2 7 VDD VD EN C2 PGND 1 MP6907 SYNC LL 3 R3 R1 8 Figure 11: IC Power Derived from the Auxiliary Winding in High-Side Rectification 6 VG C3 VSS 5 R2 Figure 9: IC Power Derived from Output Voltage The IC benefits from a wide VDD operating range (4.2V to 35V). The MP6907 supports most application fields with low-side rectification by deriving the supply power from the system output directly. If the output voltage is out of the VDD operating range or high-side rectification is used, an auxiliary winding solution for the IC’s power supply is recommended (see Figure 10 and Figure 11). The auxiliary winding turn count (Nau) can be set using Equation (2): Nau  VDD  Ns VOUT (2) Where Ns is the secondary winding turn count. MP6907 Rev. 1.02 2/7/2017 A simple non-auxiliary winding solution for the IC’s power supply is shown in Figure 12 and Figure 13. The IC power is derived from the secondary transformer winding through a diode. When using this power solution, ensure that the winding voltage is lower than the higher limit of the VDD operating range (35V). R4 C1 D1 4 2 7 R1 8 VDD VD EN MP6907 PGND LL 6 3 R3 SYNC VG C2 1 VSS C3 5 R2 Figure 12: IC Power Derived from the Secondary Winding in Low-Side Rectification In Figure 12, the winding voltage is VS = VOUT + VIN_MAX/n, where VOUT is the output voltage, VIN_MAX is the maximum input voltage, and n is the transformer turn ratio. www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2017 MPS. All Rights Reserved. 12 MP6907 – FAST TURN-OFF FLYBACK SYNCHRONOUS RECTIFIER C1 R1 R2 8 C3 VG 3 R3 MP6907 LL 5 VSS D1 1 2 EN 7 SYNC PGND R4 4 VD VDD 6 C2 Figure 13: IC Power Derived from the Secondary Winding in High-Side Rectification including driver loss. Because VDS is adjusted at about -70mV during the driving period when the switching current is fairly small, a MOSFET with an RDS(ON) that is too low is not recommended because the gate driver will be pulled low when VDS = -ISDxRDS(ON) becomes larger than -70mV. The RDS(ON) of the MOSFET does not contribute to conduction loss. The conduction loss is PCON = -VDSxISD ≈ ISDx70mV. In Figure 13, VS = VIN_MAX/n. Figure 16 shows the typical waveform of a QR flyback, assuming a 50% duty cycle and where IOUT is the output current. If the secondary winding voltage exceeds the higher limit of the VDD operating range (35V), then an external LDO circuit with a Zener diode is needed for the non-auxiliary winding solution (see Figure 14 and Figure 15). To achieve a fairly high use of the MOSFET’s RDS(ON), the MOSFET should be turned on completely for at least 50% of the SR conduction period. Calculate VDS with Equation (3): Vds  Ic  Ron  2  IOUT  Ron  Vfwd R4 C1 D2 D1 Where VDS is the drain-source voltage of the MOSFET, and Vfwd is the forward voltage threshold (~70mV). R5 4 2 7 R1 8 EN 6 VDD VD MP6907 SYNC VG PGND 1 LL 3 C2 R3 C3 5 VSS (3) R2 Figure 14: IC Power Derived from the Secondary Winding through an External LDO in Low-Side Rectification The MOSFET’s RDS(ON) is recommended to be no lower than ~35/IOUT (mΩ). For example, for a 5A application, the RDS(ON) of the MOSFET is recommended to be no lower than 7mΩ. Id 50% SR Conduction Period Ipeak Ic Ipeak≈4·IOUT Ic≈2·IOUT C1 R1 R2 D1 8 C3 R5 R4 3 R3 5 1 D2 VG LL VSS PGND MP6907 VD EN SYNC VDD Vg 4 2 7 6 C2 SR Conduction Period Figure 16: Synchronous Rectification Typical Waveforms in QR Flyback Figure 15: IC Power Derived from the Secondary Winding through an External LDO in High-Side Rectification SR MOSFET Selection Power MOSFET selection is a trade-off between RDS(ON) and QG. To achieve higher efficiency, a MOSFET with a smaller RDS(ON) is preferred. Typically, QG is larger when the RDS(ON) is smaller, which makes the turn-on/-off speed lower and leads to larger power loss, MP6907 Rev. 1.02 2/7/2017 www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2017 MPS. All Rights Reserved. 13 MP6907 – FAST TURN-OFF FLYBACK SYNCHRONOUS RECTIFIER PCB Layout Guidelines Efficient PCB layout is critical for stable operation. For best results, refer to Figure 17, Figure 18, and Figure 19, and follow the guidelines below. Layout Example Figure 18 shows a layout example of a single layer with a through-hole transformer and a TO220 package SR FET. RSN and CSN are the RC snubber network for the SR FET. Sensing for VD/VSS The sensing loop (VD and VSS to the SR FET) is minimized and kept separate from the power loop. The VDD decoupling capacitor (C4) is placed beside VDD. 1) Make the sensing connection (VD/VSS) as close as possible to the MOSFET (drain/source). 2) Make the sensing loop as small as possible C3 R3 R2 Q1 G 3) Place the VD resistor close to VD. D 4) Keep the IC out of the power loop to prevent the sensing loop and power loop from interrupting each other (see Figure 17). R1 S CSN 0 C2 RSN C1 MP6907 0 R4 RD VD Sensing loop as small as possible G D D1 LAYOUT TRACE VSS COMPONENTS PAD JUMP WIRE S Sensing loops separated from power loop Figure 17: Voltage Sensing for VD/VSS on MP6907 5) Place a decoupling ceramic capacitor no smaller than 1µF from VDD to PGND close to the IC for adequate filtering. Gate Driver Loop 1) Make the gate driver loop as small as possible to minimize parasitic inductance. 2) Keep the driver signal far away from the VD sensing trace on the layout. Figure 18: Layout Example with TO220 Package SR FET Figure 19 shows another layout example of a single layer with a PowerPAK/SO8 package SR FET, which also has a minimized sensing loop and power loop to prevent the loops from interfering with one another. R3 C3 R4 D1 R1 C2 0 Q1 C1 R2 LAYOUT TRACE COMPONENTS PAD JUMP WIRE Figure 19: Layout Example with PowerPAK/SO8 Package SR FET MP6907 Rev. 1.02 2/7/2017 www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2017 MPS. All Rights Reserved. 14 MP6907 – FAST TURN-OFF FLYBACK SYNCHRONOUS RECTIFIER TYPICAL APPLICATION CIRCUIT VIN F1 1A CY1 4.7nF/250VAC CY2 4.7nF/250VAC R1 1MΩ CX1 0.22µF/250VAC R2 1MΩ LX1 24mH GBU4J 1 BD1 2 C1 100µF R11 R13 10kΩ R12 1KΩ R10 150KΩ 150KΩ R9 10 Ω R7 20KΩ PGND R5 DRV NC HV C11 8 6 7 5 PGND CY3 2.2nF/250VAC T1 AGND TL431 U2 U3 PC817B 1KΩ R24 45:9:7:7 EE28_L R22 20Ω C12 0.1µF/25V 22µF/25V PGND CS VCC R16 51KΩ GND FSET HF0300 C10 4.7nF/1kV 4 3 2 1 D2 US1K-F C13 22pF C5 10nF COMP D5 RT1 5Ω Q1 R4 C15 390p PGND AGND Vaux 0Ω 100nF C16 Vs R25 R26 2KΩ R27 66.5KΩ VG Q2 R28 10KΩ VS C3 1nF VOUT R8 100K D1 AGND 220µF C6 VD AGND R14 10Ω D3 U1 MP6907GS VD EN VG SYNC LL VSS PGND VDD C4 1µF R15 10Ω R17 VG 1KΩ D4 VD 3 4 15 www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2017 MPS. All Rights Reserved. MP6907 Rev. 1.02 2/7/2017 1Ω PGND 1.5Ω AP2761I R3 1Ω 4 2 Vaux Figure 20: MP6907 for a Secondary Synchronous Controller in a 90W Flyback Application MP6907 – FAST TURN-OFF FLYBACK SYNCHRONOUS RECTIFIER PACKAGE INFORMATION SOIC8 MP6907 Rev. 1.02 2/7/2017 www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2017 MPS. All Rights Reserved. 16 MP6907 – FAST TURN-OFF FLYBACK SYNCHRONOUS RECTIFIER PACKAGE INFORMATION (continued) TSOT23-6 See note 7 EXAMPLE TOP MARK PIN 1 ID IAAAA RECOMMENDED LAND PATTERN TOP VIEW SEATING PLANE SEE DETAIL ''A'' FRONT VIEW SIDE VIEW NOTE: DETAIL "A" 1) ALL DIMENSIONS ARE IN MILLIMETERS. 2) PACKAGE LENGTH DOES NOT INCLUDE MOLD FLASH, PROTRUSION OR GATE BURR. 3) PACKAGE WIDTH DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. 4) LEAD COPLANARITY (BOTTOM OF LEADS AFTER FORMING) SHALL BE 0.10 MILLIMETERS MAX. 5) DRAWING CONFORMS TO JEDEC MO-193, VARIATION AB. 6) DRAWING IS NOT TO SCALE. 7) PIN 1 IS LOWER LEFT PIN WHEN READING TOP MARK FROM LEFT TO RIGHT, (SEE EXAMPLE TOP MARK) NOTICE: The information in this document is subject to change without notice. Users should warrant and guarantee that third party Intellectual Property rights are not infringed upon when integrating MPS products into any application. MPS will not assume any legal responsibility for any said applications. MP6907 Rev. 1.02 2/7/2017 www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2017 MPS. All Rights Reserved. 17
MP6907GS-Z 价格&库存

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