MP6919
CCM/DCM Flyback Ideal Diode
with Integrated 100V/13mΩ MOSFET
and No Need for Auxiliary Winding
DESCRIPTION
FEATURES
The MP6919 is a fast turn-off, intelligent rectifier
for flyback converters that integrates a 100V
MOSFET. It offers higher efficiency and power
density than a diode rectifier. The chip
regulates the forward voltage drop of the
internal power switch to 40mV (1), and turns off
before the drain-source voltage reverses.
The device generates its own supply voltage
without requiring auxiliary winding. This feature
makes it suitable for charger applications with a
low output voltage requirement, or any other
adapter applications with high-side set-up. The
internal ringing detection circuitry prevents the
MP6919 from falsely turning on during
discontinuous conduction mode (DCM) or
quasi-resonant operations.
The MP6919 is available in an SOIC-8 package.
Integrated 100V/13mΩ MOSFET
Wide Output Range Down to 0V
Does not Require Auxiliary Winding for
High-Side or Low-Side Rectification
Ringing Detection Prevents False Turn-On
during DCM Operations
Compatible with Energy Star
110µA Quiescent Current
Supports DCM, CCM, and Quasi-Resonant
Operations
Available in an SOIC-8 Package
APPLICATIONS
Laptop Adapters
QC and USB PD Chargers
High-Efficiency Flyback Converters
All MPS parts are lead-free, halogen-free, and adhere to the RoHS directive. For
MPS green status, please visit the MPS website under Quality
Assurance. “MPS”, the MPS logo, and “Simple, Easy Solutions” are registered
trademarks of Monolithic Power Systems, Inc. or its subsidiaries.
Note:
1) Related issued patent: US Patent US8, 067,973; CN Patent
ZL201010504140.4. Other patents pending.
TYPICAL APPLICATION
MP6919 Rev. 1.0
1/10/2020
www.MonolithicPower.com
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© 2020 MPS. All Rights Reserved.
1
MP6919 – FAST TURN-OFF INTELLIGENT RECTIFIER
ORDERING INFORMATION
Part Number
MP6919GS*
Package
SOIC-8
Top Marking
See Below
MSL Rating
3
* For Tape & Reel, add suffix –Z (e.g. MP6919GS–Z).
TOP MARKING
MP6919: Part number
LLLLLLLL: Lot number
MPS: MPS prefix
Y: Year code
WW: Week code
PACKAGE REFERENCE
TOP VIEW
SOIC-8
PIN FUNCTIONS
Pin #
Name
1, 6, 7, 8
VD
MOSFET drain.
2, 3
VS
MOSFET source. VS is also used as a reference for VDD.
4
VDD
5
SENSE
MP6919 Rev. 1.0
1/10/2020
Description
Linear regulator output. VDD is the supply of the MP6919.
MOSFET drain voltage sensing. SENSE is also used as the linear regulator
input.
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2
MP6919 – FAST TURN-OFF INTELLIGENT RECTIFIER
ABSOLUTE MAXIMUM RATINGS (2)
VDD to VS ..................................... -0.3V to +14V
VD to VS ..................................... -1.5V to +100V
SENSE to VS ................................. -1V to +180V
Continuous drain current (TC = 25°C)........ 14.1A
Continuous drain current (TC = 100°C)........ 8.9A
Pulsed drain current (3) .................................. 50A
Maximum power dissipation (4) ................... 1.7W
Junction temperature ................................ 150°C
Lead temperature (solder) ........................ 260°C
Storage temperature ................-55°C to +150°C
ESD Rating
Human-body model (HBM) ............... ±1200V
Charged-device model (CDM)...........±2000V
Recommended Operation Conditions (5)
Thermal Resistance (6)
θJA
θJC
SOIC-8……………………...70…....32..°C/W
Notes:
2)
3)
4)
5)
6)
Exceeding these ratings may damage the device.
Repetitive rating: Pulse width = 100µs, duty cycle limited by
maximum junction temperature.
TA = 25°C. The maximum allowable power dissipation is a
function of the maximum junction temperature TJ (MAX), the
junction-to-ambient thermal resistance θJA, and the ambient
temperature TA. The maximum allowable continuous power
dissipation at any ambient temperature is calculated by PD
(MAX) = (TJ (MAX) - TA) / θJA. Exceeding the maximum
allowable power dissipation produces an excessive die
temperature, causing the regulator to go into thermal
shutdown. Internal thermal shutdown circuitry protects the
device from permanent damage.
The device is not guaranteed to function outside of its
operating conditions.
Measured on JESD51-7, 4-layer PCB.
VDD to VS ........................................ 4.5V to 13V
Operating junction temp (TJ) .....-40°C to +125°C
MP6919 Rev. 1.0
1/10/2020
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© 2020 MPS. All Rights Reserved.
3
MP6919 – FAST TURN-OFF INTELLIGENT RECTIFIER
ELECTRICAL CHARACTERISTICS
VDD = VDD_REG, TJ = -40 to +125°C, unless otherwise noted.
Parameter
Drain-source breakdown
voltage
Symbol
Conditions
Min
V(BR)DSS
TJ = 25°C
100
VDD regulation voltage
VDD_REG
SENSE = 12V,
CDD = 1µF
6.3
6.7
7
V
4.0
0.1
4.2
0.24
4.4
0.38
V
V
VDD UVLO rising
VDD UVLO hysteresis
VDD maximum charging
current
Operating current
Quiescent current
Control Circuitry Section
Forward regulation voltage
(VS-VD) (7)
IVDD
ICC
IQ(VDD)
VDD = 5.5V,
SENSE = 30V
fSW = 100kHz
VDD = 7V
Vfwd
Turn-on threshold (VDS)
Turn-off threshold (VS-VD) (7)
Turn-on delay
tDON
Turn-off delay (7)
tDOFF
Turn-on blanking time
tB-ON
Turn-off blanking threshold
VB-OFF
(VDS)
Turn-off threshold during
minimum on time (VDS)
Turn-on slew rate detection
time (8)
Power Switch Section
Single pulse avalanche
EAS
energy
Drain-source on state
RDS(ON)
resistance
Input capacitance
CISS
Output capacitance
COSS
Reverse transfer capacitance
CRSS
Source-Drain Diode Characteristics
Source-drain diode forward
VSD
voltage
Reverse recovery time
trr
Diode reverse change
Qrr
Typ
Max
Units
V
63
mA
2.4
110
4
135
mA
µA
25
40
55
mV
-115
-80
-57
mV
-6
3
+12
mV
0.8
20
25
1.2
1.55
ns
ns
µs
3
V
(8)
2
1.8
V
30
ns
VPS = 50V, VGS = 6.7V,
L = 1.0mH, TJ = 25°C
100
mJ
ID = 2A,TJ = 25°C
13
VDS = 40V, VGS = 0V,
f = 1MHz
16.3
1925
307
20
IS = 20A, VGS = 0V
0.8
IF = 10A, dl/dt = 100A/μs
79
106
mΩ
pF
pF
pF
1.2
V
ns
nC
Notes:
7) Guaranteed by characterization.
8) Guaranteed by design.
MP6919 Rev. 1.0
1/10/2020
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4
MP6919 – FAST TURN-OFF INTELLIGENT RECTIFIER
TYPICAL PERFORMANCE CHARACTERISTICS
VDD = VDD_REG, unless otherwise noted.
VD-VS Breakdown Voltage vs.
Temperature
VDD Rising vs. Temperature
4.40
4.35
120
VDD_RISING (V)
BREAKDOWN VOLTAGE (V)
125
115
110
105
4.30
4.25
4.20
4.15
4.10
4.05
100
-50
-25
4.00
0
25 50 75 100 125 150
TEMPERATURE (℃)
-50
0
25 50 75 100 125 150
TEMPERATURE (℃)
IVDD Maximum Charging Current vs.
Temperature
Operation Current vs. Temperature
VDD = 5.5V, SENSE = 30V
2.50
100
2.45
90
80
2.40
IVDD (mA)
OPERATION CURRENT (mA)
-25
2.35
2.30
2.25
70
60
50
40
2.20
-50
-25
0
25 50 75 100 125 150
TEMPERATURE (℃)
30
-50
-25
0
25 50 75 100 125 150
TEMPERATURE (℃)
RDS(ON) vs. Temperature
Normalized, drain-source on resistance
RDS (ON), (NORMALIZED)
DRAIN-SOURCE ON
RESISTANCE
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-50 -25
MP6919 Rev. 1.0
1/10/2020
0
25 50 75 100 125 150
TEMPERATURE (℃)
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5
MP6919 – FAST TURN-OFF INTELLIGENT RECTIFIER
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
VDD = VDD_REG, unless otherwise noted.
Operation in 36W Flyback
Application
Operation in 36W Flyback
Application
VIN = 90VAC, IOUT = 3.0A
VIN = 265VAC, IOUT = 3.0A
CH1: VDS
CH1: VDS
CH4: ISD
CH4: ISD
MP6919 Rev. 1.0
1/10/2020
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6
MP6919 – FAST TURN-OFF INTELLIGENT RECTIFIER
FUNCTIONAL BLOCK DIAGRAM
VD
VDD
Power
Management
VDD
D
VDD Charge
SENSE
G
Control Circuit
Driver
S
VS
Figure 1: Functional Block Diagram
MP6919 Rev. 1.0
1/10/2020
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MP6919 – FAST TURN-OFF INTELLIGENT RECTIFIER
OPERATION
The
MP6919
supports
operation
in
discontinuous
conduction
mode
(DCM),
continuous conduction mode (CCM), and quasiresonant flyback converters. The control
circuitry controls the gate in forward mode, and
turns the gate off when the synchronous
rectification (SR) MOSFET current drops to
zero.
VDD Generation
SENSE is the input for the linear regulator, the
output of which is VDD. VDD supplies the
MP6919, and is regulated at VDD_REG (about
6.7V).
When SENSE is below 4.7V, a 40mA current
source from SENSE charges up VDD. When
SENSE is above 4.7V, the linear regulator’s
maximum charging current is limited at IVDD to
charge the external capacitor at VDD.
Start-Up and Under-Voltage Lockout (UVLO)
When VDD rises above 4.2V, the MP6919 exits
under-voltage lockout (UVLO) and is enabled.
Once VDD drops below 4.0V, the MP6919
enters sleep mode and VGS is maintained low.
Turn-On Phase
When VDS drops to about 2V, a turn-on timer
begins. If VDS reaches the -80mV turn-on
threshold from 2V within the slew rate detection
time (about 30ns), the MOSFET turns on after a
turn-on delay, tDON (about 20ns).
If VDS crosses -80mV after the timer ends, the
gate voltage remains off (see Figure 2). This
turn-on timer prevents the device from falsely
turning on due to ringing from DCM and quasiresonant operations.
Turn-On Blanking
The control circuitry contains a blanking
function. When the MOSFET turns on, the
control circuit ensures that the on state lasts for
a specific period of time. The turn-on blanking
time is tB-ON (about 1.2µs), and it prevents an
accidental turn-off due to ringing. If VDS reaches
1.8V within the turn-on blanking time, VGS pulls
low immediately.
When VDS rises above the forward voltage drop,
-VFWD (-40mV), according to the decrease of the
switching current, the MP6919 lowers the gate
voltage level to enlarge the on resistance of the
synchronous MOSFET.
VDS
2V
-3mV
-40mV
-80mV
Driver begins
pulling down
VGS
Driver turns
off
2V
Turn-On
Delay
Turn-On
Blanking
Turn-Off Turn-Off
Delay Blanking
Figure 2: Turn-On/Turn-Off Timing Diagram
With this control scheme, VDS adjusts to be
about -VFWD even when the current through the
MOSFET is fairly low. This function maintains
the driver voltage at a very low level when the
synchronous MOSFET turns off. It also boosts
the turn-off speed, and is used for CCM
operation.
Turn-Off Phase
When VDS rises to trigger the turn-off threshold
(about -3mV), the gate voltage pulls to zero
after a short turn-off delay of tDOFF (about 25ns)
(see Figure 2).
Turn-Off Blanking
After the gate driver (VGS) pulls to zero when
VDS reaches the turn-off threshold (-3mV), a
turn-off blanking time is applied (see Figure 2).
During this process, the gate driver signal
latches off. Turn-off blanking is removed when
VDS exceeds VB-OFF (about 2V).
Conduction Phase
MP6919 Rev. 1.0
1/10/2020
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8
MP6919 – FAST TURN-OFF INTELLIGENT RECTIFIER
APPLICATION INFORMATION
Slew Rate Detection Function
In DCM operations, the demagnetizing ringing
may force VDS below 0V. If VDS reaches the turnon threshold during the ringing, SR controllers
without slew rate detection may turn on the
MOSFET by mistake. This increases power
loss, and may also lead to shoot-through if the
primary-side MOSFET turns on within the
minimum on time.
The slew rate during ringing is always lower
than when the primary MOSFET is completely
turned off. This false turn-on situation is
prevented by the slew rate detection function.
When the slew rate is below the threshold, the
IC does not turn on the gate, even when VDS
reaches the turn-on threshold. See the Turn-On
Phase section on page 8 for more details.
External Resistor on SENSE
Over-voltage conditions can
damage the
MP6919, and appropriate application design
guarantees safe operation, especially on the
high voltage pin.
One common over-voltage condition is when
the body diode of the SR MOSFET turns on
because the forward voltage drop exceeds the
negative rating on the SENSE pin. If this occurs,
it is recommended to place an external resistor
between SENSE and the MOSFET drain. The
recommended resistance is about 100Ω to
300Ω.
Do not use a resistor that is too large, because
it may compromise the VDD supply and slow
down the slew rate on the VDS detection. It is
not recommended to use a resistor greater than
300Ω. The resistor should be chosen based on
the VDD supply and the slew rate.
Typical System Implementations
Figure 3 and Figure 4 show the typical system
IC implementation in low-side rectification and
high-side rectification, respectively.
Figure 4: High-Side Rectification
Maximum Output Current
The allowed temperature rise of the MP6919
limits the maximum output current the device
can handle. The temperature rise is determined
by the device’s power loss. For a universal
input adapter, the recommended rated output
current for the MP6919 is 3A. For certain
designs, the power loss can be calculated to
determine the maximum output current.
The MP6919 loses power due to controller
consumption or integrated MOSFET conduction
loss. If the MP6919 works in continuous
conduction mode (CCM), reverse-recovery
power loss of the integrated MOSFET must
also be considered.
The power loss from controller consumption
can be calculated with Equation (1):
PLOSS_Controller VSENSE_P IDD
(1)
Where IDD is the MP6919’s current, and
VSENSE_P is the corresponding plateau voltage
on the SENSE pin when the primary side
MOSFET turns on.
The power loss from integrated MOSFET
conduction loss can be estimated with Equation
(2):
PLOSS _ SR _ Conduction
1
t s _ on
t s _ on
VSR _ SD (t) ISR _ SD (t)dt
(2)
0
Where ts_on is the SR on period, VSR_SD is the
voltage drop from the SR, and ISR_SD is the
current flowing through the SR.
The power loss during reverse-recovery can be
calculated with Equation (3):
1
PLOSS _ SR _ RR VDS Irr trr fsw
2
(3)
Where Irr is the peak reverse current, and trr is
reverse-recovery time.
Figure 3: Low-Side Rectification
MP6919 Rev. 1.0
1/10/2020
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9
MP6919 – FAST TURN-OFF INTELLIGENT RECTIFIER
The total loss of the MP6919 (PLOSS) is the sum
of the above losses. When using an RC
snubber, be sure to also consider the power
loss caused by the snubber.
The junction and case temperature rises can be
calculated with the junction-to-ambient (θJA)
thermal resistance and junction-to-case (θJC)
thermal resistance. The junction temperature
must be within ABS (typically 150°C). ∆TJA can
be calculated with Equation (4):
TJA PLOSS JA
(4)
∆TJC can be estimated with Equation (5):
TJC P LOSS JC
(5)
Reduce thermal resistance by adding a thicker
copper layer, placing more thermal dissipation
vias, and adopting a heatsink. The maximum
output current can be set by combining the real
tested data.
MP6919 Rev. 1.0
1/10/2020
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10
MP6919 – FAST TURN-OFF INTELLIGENT RECTIFIER
PACKAGE INFORMATION
SOIC-8
0.189(4.80)
0.197(5.00)
8
0.050(1.27)
0.024(0.61)
5
0.063(1.60)
0.150(3.80)
0.157(4.00)
PIN 1 ID
1
0.228(5.80)
0.244(6.20)
0.213(5.40)
4
TOP VIEW
RECOMMENDED LAND PATTERN
0.053(1.35)
0.069(1.75)
SEATING PLANE
0.004(0.10)
0.010(0.25)
0.013(0.33)
0.020(0.51)
SEE DETAIL "A"
0.050(1.27)
BSC
SIDE VIEW
FRONT VIEW
0.010(0.25)
x 45o
0.020(0.50)
GAUGE PLANE
0.010(0.25) BSC
0o-8o
DETAIL "A"
MP6919 Rev. 1.0
1/10/2020
NOTE:
1) CONTROL DIMENSION IS IN INCHES. DIMENSION IN
BRACKET IS IN MILLIMETERS.
2) PACKAGE LENGTH DOES NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
3) PACKAGE WIDTH DOES NOT INCLUDE INTERLEAD FLASH
OR PROTRUSIONS.
4) LEAD COPLANARITY (BOTTOM OF LEADS AFTER FORMING)
SHALL BE 0.004" INCHES MAX.
5) DRAWING CONFORMS TO JEDEC MS-012, VARIATION AA.
6) DRAWING IS NOT TO SCALE.
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11
MP6919 – FAST TURN-OFF INTELLIGENT RECTIFIER
CARRIER INFORMATION
Part
Number
Package
Description
Quantity
/Reel
Quantity
/Tube
Quantity
/Tray
Reel
Diameter
MP6919GS*
SOIC-8
2500
100
N/A
13 in.
ABCD
ABCD
Pin 1
Carrier
Tape
Width
12 mm
Carrier
Tape
Pitch
8 mm
Notice: The information in this document is subject to change without notice. Users should warrant and guarantee that thirdparty Intellectual Property rights are not infringed upon when integrating MPS products into any application. MPS will not
assume any legal responsibility for any said applications.
MP6919 Rev. 1.0
1/10/2020
www.MonolithicPower.com
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.
© 2020 MPS. All Rights Reserved.
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