MP6973
CCM/DCM Flyback Ideal Diode
with Integrated 100V/14mΩ MOSFET
with Slew Rate Detection
DESCRIPTION
FEATURES
The MP6973 is a fast turn-off, intelligent rectifier
for flyback converters that integrates a
100V/14mΩ MOSFET. It can replace a diode
rectifier for higher efficiency and power density.
The chip regulates the forward voltage drop of
the internal power switch to VFWD (40mV) and
turns off before the drain-source voltage
reverses.
Integrated 100V/14mΩ MOSFET
Optimized Efficiency for Low-Side
Rectification
Ringing Detection Prevents False Turn-On
during DCM Operations
Compatible with Energy Star
110µA Quiescent Current
Supports DCM, CCM, and Quasi-Resonant
Operations
Wide Output Range Down to 0V
Available in an SOIC-8 Package
The MP6973 is optimized for low-side
rectification. The internal ringing detection
circuitry prevents the MP6973 from falsely
turning on during discontinuous conduction
mode (DCM) or quasi-resonant operations.
APPLICATIONS
The MP6973 is available in an SOIC-8 package.
Laptop Adapters
QC and USB PD Chargers
High-Efficiency Flyback Converters
All MPS parts are lead-free, halogen free, and adhere to the RoHS directive. For
MPS green status, please visit the MPS website under Quality Assurance. “MPS”,
the MPS logo, and “Simple, Easy Solutions” are registered trademarks of
Monolithic Power Systems, Inc. or its subsidiaries.
TYPICAL APPLICATION
VOUT+
HVC
SENSE
VDD
VOUT-
VD
VS
MP6973
MP6973 Rev. 1.0
6/17/2020
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1
MP6973 – FAST TURN-OFF INTELLIGENT RECTIFIER
ORDERING INFORMATION
Part Number
MP6973GS*
Package
SOIC-8
Top Marking
See Below
MSL Rating
2
* For Tape & Reel, add suffix –Z (e.g. MP6973GS–Z).
TOP MARKING
MP6973: Part number
LLLLLLLL: Lot number
MPS: MPS prefix
Y: Year code
WW: Week code
PACKAGE REFERENCE
TOP VIEW
VS
1
8
VD
HVC
2
7
VD
SENSE
3
6
VD
4
5
VDD
VS
SOIC-8
MP6973 Rev. 1.0
6/17/2020
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2
MP6973 – FAST TURN-OFF INTELLIGENT RECTIFIER
PIN FUNCTIONS
Pin #
1, 4
2
3
5
6, 7, 8
Name
VS
HVC
SENSE
VDD
VD
Description
MOSFET source. VS is also used as a reference for VDD.
HV linear regulator input.
MOSFET drain voltage sensing.
Linear regulator output. VDD is the power supply of IC.
MOSFET drain.
θJA
θJC
ABSOLUTE MAXIMUM RATINGS (1)
Thermal Resistance (5)
VDD to VS ....................................-0.3V to +14V
VD to VS .....................................-1.5V to +100V
SENSE, HVC to VS .......................-1V to +180V
Continuous drain current (TC = 25°C) ....... 14.1A
Continuous drain current (TC = 100°C) ....... 8.9A
Pulsed drain current (2) ................................. 50A
Maximum power dissipation (3) ................... 1.8W
Junction temperature ................................150°C
Lead temperature (solder) ........................260°C
Storage temperature ............... -55°C to +150°C
SOIC-8 .................................... 67 ...... 30... °C/W
Notes:
1)
2)
3)
ESD Rating
Charged device model (CDM) ............... ±2000V
4)
Recommended Operation Conditions
5)
(4)
Exceeding these ratings may damage the device.
Repetitive rating: Pulse width = 100µs, duty cycle limited by
maximum junction temperature.
TA = 25°C. The maximum allowable power dissipation is a
function of the maximum junction temperature TJ (MAX), the
junction-to-ambient thermal resistance θJA, and the ambient
temperature TA. The maximum allowable continuous power
dissipation at any ambient temperature is calculated by PD
(MAX) = (TJ (MAX) - TA) / θJA. Exceeding the maximum
allowable power dissipation produces an excessive die
temperature, causing the regulator to go into thermal
shutdown. Internal thermal shutdown circuitry protects the
device from permanent damage.
The device is not guaranteed to function outside of its
operating conditions.
Measured on JESD51-7, 4-layer PCB.
VDD to VS ....................................... 4.5V to 13V
Operating junction temp (TJ) .... -40°C to +125°C
MP6973 Rev. 1.0
6/17/2020
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MP6973 – FAST TURN-OFF INTELLIGENT RECTIFIER
ELECTRICAL CHARACTERISTICS
VDD = VDD_HVC, TJ = -40°C to +125°C, unless otherwise noted.
Parameter
Symbol
Conditions
Min
Typ
Max
Units
VDD_SEN
SENSE = 30V, HVC = 0V
4.6
5
5.4
V
VDD_HVC
SENSE = 0V, HVC = 12V
6.3
6.7
7
V
4.0
0.1
4.2
0.24
4.4
0.38
V
V
20
38
55
mA
20
38
62
mA
35
64
95
mA
1.6
2.4
110
4
135
mA
µA
25
40
55
mV
-115
-80
-57
mV
VDD regulation voltage
VDD UVLO rising
VDD UVLO hysteresis
IVDD_SEN
VDD charging current
IVDD_HVC
Operating current
Quiescent current
Control Circuitry Section
Forward regulation voltage
(VS-VD) (6)
Turn-on threshold (VDS)
ICC
IQ(VDD)
VDD = VDD_SEN - 0.1V,
SENSE = 30V, HVC = 0V,
CDD = 1µF
VDD = VDD_HVC - 0.1V,
SENSE = 0V, HVC = 12V,
CDD = 1µF
VDD = VDD_HVC - 0.1V,
SENSE = 0V, HVC = 30V,
CDD = 1µF
fSW = 100kHz
VDD = 7V
VFWD
Turn-off threshold (VS-VD) (6)
Turn-on delay (7)
Turn-off delay (6)
Turn-on blanking time
Turn-off blanking threshold
(VDS)
Turn-off threshold during
minimum on time (VDS)
Turn-on slew rate detection
time (7)
Power Switch Section (8)
Drain source breakdown
voltage (6)
Single-pulse avalanche energy
(6)
Drain-source on resistance
Input capacitance (7)
Output capacitance (7)
Reverse transfer capacitance (7)
MP6973 Rev. 1.0
6/17/2020
-6
3
+12
mV
tD_ON
tD_OFF
tB-ON
0.8
20
25
1.2
1.55
ns
ns
µs
VB-OFF
2
2.5
3
V
1.2
1.8
2.5
V
30
V(BR)DSS
EAS
RDS(ON)
CISS
COSS
CRSS
ns
100
VPS = 50V, VGS = 0V,
L = 1.0mH
ID = 2A, VGS = 6.7V
VDS = 40V, VGS = 0V,
f = 1MHz
V
100
14
1925
307
20
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mJ
17.5
mΩ
pF
pF
pF
4
MP6973 – FAST TURN-OFF INTELLIGENT RECTIFIER
ELECTRICAL CHARACTERISTICS (continued)
VDD = VDD_HVC, TJ = -40°C to +125°C, unless otherwise noted.
Parameter
Symbol
Source-Drain Diode Characteristics
Source-drain diode forward
VSD
voltage
Reverse recovery time (7)
tRR
Diode reverse change (7)
QRR
Conditions
Min
Typ
Max
Units
IS = 8A, VGS = 0V
0.8
1.2
V
IF = 10A, dl/dt = 100A/μs
78
105
ns
nC
Notes:
6) Guaranteed by characterization.
7) Guaranteed by design.
8) TJ = 25°C.
MP6973 Rev. 1.0
6/17/2020
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5
MP6973 – FAST TURN-OFF INTELLIGENT RECTIFIER
TYPICAL CHARACTERISTICS
VDD Rising vs. Temperature
117
4.30
116
115
VDD_RISING (V)
BREAKDOWN VOLTAGE (V)
VD-VS Breakdown Voltage vs.
Temperature
114
113
112
111
4.25
4.20
4.15
110
109
4.10
-50
0
50
100
TEMPERATURE (℃)
150
-50
6.70
5.00
6.68
4.98
6.66
6.64
4.96
4.94
4.92
6.62
6.60
4.90
-50
0
50
100
TEMPERATURE (℃)
-50
150
Operation Current vs. Temperature
(VDD = 6.7V)
2.50
45
2.45
40
2.40
2.35
2.30
2.25
0
50
100
TEMPERATURE (℃)
150
VDD Charging Current vs.
Temperature (SENSE = 30V)
IVDD_SENSE (mA)
OPERATION CURRENT (mA)
150
VDD Regulation Voltage vs.
Temperature (SENSE = 30V)
VDD_SENSE (V)
VDD_HVC (V)
VDD Regulation Voltage vs.
Temperature (HVC = 12V)
0
50
100
TEMPERATURE (℃)
35
30
25
20
15
10
2.20
-50
MP6973 Rev. 1.0
6/17/2020
0
50
100
TEMPERATURE (℃)
150
-50
0
50
100
TEMPERATURE (℃)
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150
6
MP6973 – FAST TURN-OFF INTELLIGENT RECTIFIER
TYPICAL CHARACTERISTICS (continued)
VDD Charging Current vs.
Temperature (HVC = 12V)
Quiescent Current vs. Temperature
(VDD = 7V)
110
50
108
40
35
IQ (μA)
IVDD_HVC (mA)
45
30
25
20
106
104
102
15
100
10
-50
0
50
100
TEMPERATURE (℃)
150
-50
0
50
100
TEMPERATURE (℃)
150
RDS(ON), NORMALIZED
DRAIN-SOURCE ON RESISTANCE
RDS(ON) vs. Temperature
1.60
1.40
1.20
1.00
0.80
0.60
0.40
0.20
-50
MP6973 Rev. 1.0
6/17/2020
0
50
100
TEMPERATURE (℃)
150
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MP6973 – FAST TURN-OFF INTELLIGENT RECTIFIER
TYPICAL PERFORMANCE CHARACTERISTICS
Operation in 36W Flyback
Application
Operation in 36W Flyback
Application
VIN = 90VAC, IOUT = 3.0A
VIN = 265VAC, IOUT = 3.0A
CH1: VDS
CH1: VDS
CH4: ISD
CH4: ISD
MP6973 Rev. 1.0
6/17/2020
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MP6973 – FAST TURN-OFF INTELLIGENT RECTIFIER
FUNCTIONAL BLOCK DIAGRAM
VD
VDD
Power
Management
IC On/Off
HVC
VDD
SENSE
Gate On/Off
Gate Regulation
Control Circuit
Driver
VS
Figure 1: Functional Block Diagram
MP6973 Rev. 1.0
6/17/2020
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MP6973 – FAST TURN-OFF INTELLIGENT RECTIFIER
OPERATION
The
MP6973
supports
operation
in
discontinuous conduction mode (DCM) and
continuous conduction mode (CCM), as well as
quasi-resonant (QR) flyback converters. The
control circuitry controls the gate in forward
mode and turns the gate off when the
synchronous rectification (SR) MOSFET current
drops to zero.
VDD Generation
The external capacitor at VDD supplies power
for the IC. First, SENSE charges the capacitor
via a current source with IVDD_SEN. When UVLO <
VDD < VDD_SENSE (5V), both HVC and SENSE are
allowed to charge VDD. But when VDD exceeds
VDD_SENSE, HVC charges VDD alone via a current
source with IVDD_HVC.
If VHVC < 5.7V, then VDD is regulated at VDD_SENSE
(5V). When 5.7V < VHVC < 6.7V, VDD is regulated
at VHVC - 0.7V (internal current-dependent
forward-diode voltage drop). When VHVC > 6.7V,
VDD is clamped at VDD_HVC (6.7V).
Start-Up and Under-Voltage Lockout (UVLO)
When VDD exceeds the VDD UVLO rising
threshold (4.2V), the MP6973 exits undervoltage lockout (UVLO) and is enabled. Once
VDD drops below ~4.0V, the MP6973 enters
sleep mode and VGS is kept low.
Turn-On Phase
When VDS drops to ~2V, a turn-on timer begins.
If VDS reaches the turn-on threshold (-80mV)
from 2V within the turn-on slew rate detection
time (30ns), the MOSFET turns on after a turnon delay (tD_ON), typically 20ns (see Figure 2). If
VDS crosses the turn-on threshold after the timer
ends, the gate voltage remains off. This turn-on
timer prevents the MP6973 from falsely turning
on due to the ringing in DCM and quasi-resonant
operations.
Turn-On Blanking
The control circuitry contains a blanking function.
When the MOSFET turns on, the control circuit
ensures that the on state lasts for a specific
period of time. The turn-on blanking time (tB-ON)
is ~1.2µs to prevent an accidental turn-off due to
ringing. However, if VDS reaches 1.8V within the
turn-on blanking time, VGS is pulled low
immediately.
MP6973 Rev. 1.0
6/17/2020
Conduction Phase
Once VDS exceeds the forward voltage drop,
which is -VFWD (-40mV), according to the
decrease of the switching current, the MP6973
lowers the gate voltage level to enlarge the on
resistance of the synchronous MOSFET.
VDS
2V
-3mV
-40mV
-80mV
Driver Begins
to be Pulled
Down
VGS
Driver Turns
Off
2V
Turn-On
Delay
Turn-On
Blanking
Turn-Off Turn-Off
Delay Blanking
Figure 2: Turn-On/Turn-Off Timing Diagram
With this control scheme, VDS is adjusted to be
approximately equal to VFWD, even when the
current through the MOSFET is fairly low. This
function keeps the driver voltage at a very low
level when the synchronous MOSFET is turned
off, which boosts the turn-off speed and is
especially important for CCM operation.
Turn-Off Phase
When VDS rises to trigger the turn-off threshold (3mV), the gate voltage is pulled to zero after a
short turn-off delay (tD_OFF), typically 25ns (see
Figure 2).
Turn-Off Blanking
After the gate driver (VGS) is pulled to zero by VDS
reaching the turn-off threshold (-3mV), a turn-off
blanking time is applied, during which the gate
driver signal is latched off. The turn-off blanking
is removed when VDS exceeds VB-OFF (2V) (see
Figure 2).
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MP6973 – FAST TURN-OFF INTELLIGENT RECTIFIER
APPLICATION INFORMATION
Slew Rate Detection
During DCM operation, the demagnetizing
ringing may bring VDS below 0V. If VDS reaches
the turn-on threshold during the ringing period,
SR controllers without slew rate detection may
turn on the MOSFET by mistake. This not only
increases power loss, but may also lead to
shoot-through if the primary-side MOSFET is
turned on within the minimum on time of the SR
controller.
The falling slew rate of the ringing is always
much less than when the primary MOSFET is
turned off; this false turn-on situation can be
prevented by the slew rate detection function.
When the slew rate is less than the threshold, the
IC does not turn on the gate even when VDS
reaches the turn-on threshold. For more details,
see the Turn-On Phase section on page 10.
External Resistor on SENSE and HVC
Over-voltage conditions may lead to the device
malfunctioning or even being damaged, so the
application design must be careful to guarantee
safe operation, especially on the high-voltage
pin.
One common over-voltage condition occurs
when the body diode of the SR MOSFET is
turned on, as the forward voltage drop may
exceed the negative rating on the SENSE pin. In
this case, it is recommended to place an external
resistor between SENSE and the MOSFET
drain. The resistance is typically recommended
to be between 100Ω and 300Ω.
On the other hand, this resistor also cannot be
too large, because it may slow down the slew
rate on VDS detection. In general, it is not
recommended to use a resistor greater than
300Ω, but this should be checked for each case
based on the condition of the slew rate.
In the applications where HVC may also suffer
from negative voltage bias (e.g. in the high side
setup without auxiliary winding), there should be
also the same resistance be placed on HVC
externally.
Typical System Implementations
Figure 3 shows the typical system IC
implementation in low-side rectification. The
MP6973 is directly supplied by the output.
MP6973 Rev. 1.0
6/17/2020
VOUT+
HVC
VDD
SENSE
VOUTVS
VD
MP6973
Figure 3: Low-Side Rectification
Maximum Output Current
The allowed temperature rise of the MP6973
limits the maximum output current the device can
handle. The temperature rise is determined by its
own power loss. Generally, the MP6973’s
recommended rated output current for a
universal input adapter is 3A. For certain designs,
the power loss of the MP6973 can be calculated,
so the maximum output current can be deduced.
The MP6973’s power loss can be separated into
several parts, including controller consumption
and integrated MOSFET conduction loss. If the
MP6973 works in continuous conduction mode
(CCM), reverse-recovery loss of the integrated
MOSFET must also be considered. Each part of
the loss can be calculated based on Equation (1),
Equation (2), and Equation (3), respectively:
PLOSS_CONTROLLER VHVC IDD
(1)
tS_ON
PLOSS _ SR _ CONDUCTION fSW
VSR _ SD (t) ISR _ SD (t)dt (2)
0
PLOSS _ SR _ RR
1
VDS IRR tRR fSW
2
(3)
Where IDD is the current of the MP6973, VHVC is
the voltage on HVC pin, tS_ON is the SR on period,
VSR_SD is the voltage drop from the SR, ISR_SD is
the current flowing through the SR, IRR is the
peak reverse current, and tRR is the reverserecovery time.
The total loss of the MP6973 (PLOSS) is the sum
of the above losses. If an RC snubber is used,
the power loss caused by this snubber must also
be taken into consideration.
The junction and case temperature rises can be
calculated with the junction-to-ambient thermal
resistance (θJA) and junction-to-case thermal
resistance (θJC). The junction temperature must
be within ABS (typically 150°C). Calculate ∆TJA
and ∆TJC with Equation (4) and Equation (5):
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MP6973 – FAST TURN-OFF INTELLIGENT RECTIFIER
TJA PLOSS JA
(4)
TJC PLOSS JC
(5)
The thermal resistance can be reduced by laying
a thicker copper layer, placing more thermal
dissipation vias, and adopting a heatsink. The
real maximum output current can be set by
combining the real tested data.
Design Example
Figure 4 shows a layout example for a low-side
application of a flyback power supply, specifically
a single layer with a through-hole transformer.
RSN and CSN are the RC snubber network for
the internal MOSFET. The sensing loop (SENSE
to the MOSFET drain) is optimized and kept
separate from the power loop. The VDD
decoupling capacitor (C2) is placed beside VDD.
PCB Layout Guidelines
Efficient PCB layout is critical for stable
operation. For best results, refer to Figure 4 and
Figure 5, and follow the guidelines below:
Sensing for VD/SENSE
1. Connect the SENSE pin to a different
position for an adjustable turn-off time during
the fast transients in CCM. The further the
junction point is from the VD, the earlier the
SR turns off (see Figure 5).
2. Keep the IC out of the power loop to prevent
the sensing loop and power loop from
interrupting each other.
VD
Sense Position
SENSE
VS
VDD
Decoupling
Capacitor
Figure 5: Voltage Sensing for VD/SENSE
3.
Place a decoupling ceramic capacitor from VDD to VS, close
to the IC, for adequate filtering.
Figure 4: Layout Example in Flyback Low-Side
Application
MP6973 Rev. 1.0
6/17/2020
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MP6973 – FAST TURN-OFF INTELLIGENT RECTIFIER
PACKAGE INFORMATION
SOIC-8
0.189(4.80)
0.197(5.00)
8
0.050(1.27)
0.024(0.61)
5
0.063(1.60)
0.150(3.80)
0.157(4.00)
PIN 1 ID
1
0.228(5.80)
0.244(6.20)
0.213(5.40)
4
TOP VIEW
RECOMMENDED LAND PATTERN
0.053(1.35)
0.069(1.75)
SEATING PLANE
0.004(0.10)
0.010(0.25)
0.013(0.33)
0.020(0.51)
SEE DETAIL "A"
0.050(1.27)
BSC
SIDE VIEW
FRONT VIEW
0.010(0.25)
x 45o
0.020(0.50)
GAUGE PLANE
0.010(0.25) BSC
0o-8o
DETAIL "A"
MP6973 Rev. 1.0
6/17/2020
NOTE:
1) CONTROL DIMENSION IS IN INCHES. DIMENSION IN
BRACKET IS IN MILLIMETERS.
2) PACKAGE LENGTH DOES NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
3) PACKAGE WIDTH DOES NOT INCLUDE INTERLEAD FLASH
OR PROTRUSIONS.
4) LEAD COPLANARITY (BOTTOM OF LEADS AFTER FORMING)
SHALL BE 0.004" INCHES MAX.
5) DRAWING CONFORMS TO JEDEC MS-012, VARIATION AA.
6) DRAWING IS NOT TO SCALE.
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13
MP6973 – FAST TURN-OFF INTELLIGENT RECTIFIER
CARRIER INFORMATION
Part Number
Package
Description
Quantity/
Reel
Quantity/Tube
Quantity/Tray
Reel
Diameter
MP6973GS–Z
SOIC-8
2500
100
N/A
13in
MP6973 Rev. 1.0
6/17/2020
Carrier
Tape
Width
12mm
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Carrier
Tape
Pitch
8mm
14
MP6973 – FAST TURN-OFF INTELLIGENT RECTIFIER
Revision History
Revision #
1.0
Revision
Date
6/17/2020
Description
Initial Release
Pages
Updated
-
Notice: The information in this document is subject to change without notice. Please contact MPS for current specifications.
Users should warrant and guarantee that third-party Intellectual Property rights are not infringed upon when integrating MPS
products into any application. MPS will not assume any legal responsibility for any said applications.
MP6973 Rev. 1.0
6/17/2020
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15