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MP86885GQWT-Z

MP86885GQWT-Z

  • 厂商:

    MPS(美国芯源)

  • 封装:

    FCTQFN29

  • 描述:

    ICREGCTRLR14V40ATQFN

  • 数据手册
  • 价格&库存
MP86885GQWT-Z 数据手册
MP86885 Intelli-Phase Solution (Integrated HS/LS FETs and Driver) in 4x6mm TQFN NOT RECOMMENDED FOR NEW DESIGNS. REFER TO MP86905 DESCRIPTION FEATURES The MP86885 is a monolithic half-bridge with built-in internal power MOSFETs and gate drivers. It achieves 40A of continuous output current over a wide input supply range. • • • • • • • • • • • Integration of the driver and MOSFETS results in high efficiency due to optimal dead time control and parasitic inductance reduction. The MP86885 is a Monolithic IC approach to drive up to 40A per phase. This very small 4mm x 6mm FC-TQFN device can operate from 100kHz to 1MHz. This device works with tri-state output controllers. It also comes with a generalpurpose current sense and temperature sense. • The MP86885 is ideal for server applications where efficiency and small size are a premium. • • • Wide 4.5V to 14V Operating Input Range Simple Logic Interface 40A Output Current Accepts Tri-State PWM Signal Built-In Switch for bootstrap Current Sense Temperature Sense (10mV/oC) Current Limit Protection Used for Multi-Phase Operation Fault Reporting Available in 4mm x 6mm FC-TQFN Package RoHS 6 Compliant APPLICATIONS Server/Workstation/Desktop Core Voltage Graphic Card Core Regulators Power Modules All MPS parts are lead-free and adhere to the RoHS directive. For MPS green status, please visit MPS website under Quality Assurance. “MPS” and “The Future of Analog IC Technology” are Registered Trademarks of Monolithic Power Systems, Inc. Intelli-Phase is Trademark of Monolithic Power Systems, Inc. TYPICAL APPLICATION 5V VDRV VDD IN VIN MP86885 AGND T1 VTEMP PWM SYNC EN CS VTEMP FAULT# FAULT# PWM SYNC EN CS RIN BST SW VOUT PGND PGND MP86885 Rev. 1.01 www.MonolithicPower.com 8/31/2020 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2021 MPS. All Rights Reserved. 1 MP86885 – INTELLI-PHASE SOLUTION IN 4x6mm TQFN NOT RECOMMENDED FOR NEW DESIGNS. REFER TO MP86905 ORDERING INFORMATION Part Number* MP86885GQWT Package FC-TQFN-29 4x6(mm) Top Marking M86885 * For Tape & Reel, add suffix –Z (e.g. MP86885GQWT–Z). PACKAGE REFERENCE IN PGND PGND 29 28 27 PWM 1 26 PGND EN 2 25 PGND CS 3 24 PGND VTEMP 4 23 PGND 5 22 PGND FAULT# 6 21 PGND AGND 7 20 PGND VDD 8 19 PGND RIN 9 18 PGND T1 10 17 SYNC BST 16 11 12 13 14 15 SW SW SW SW PGND VDRV ABSOLUTE MAXIMUM RATINGS (1) Thermal Resistance (4) Supply Voltage VIN .......................................16V VSW (DC) ............................................. -1 V to 16V VSW (25ns) ............................................ -3V to 23V VBST......................................................VSW + 6V All Other Pins ................................. -0.3V to +6V Instantaneous Current ................................65A Continuous Power Dissipation (TA =+25°C)(2) ...........................................................3.5 W Junction Temperature .............................. 150°C Lead Temperature ................................... 260°C Storage Temperature ............... -65°C to +150°C 4x6mm FC-TQFN................... 36 ....... 8 .... °C/W Recommended Operating Conditions (3) θJA θJC Notes: 1) Exceeding these ratings may damage the device. 2) The maximum allowable power dissipation is a function of the maximum junction temperature T J (MAX), the junction-toambient thermal resistance θJA, and the ambient temperature TA. The maximum allowable continuous power dissipation at any ambient temperature is calculated by P D (MAX) = (T J (MAX)-TA)/θJA. Exceeding the maximum allowable power dissipation will cause excessive die temperature, and the regulator will go into thermal shutdown. Internal thermal shutdown circuitry protects the device from permanent damage. 3) The device is not guaranteed to function outside of its operating conditions. 4) Measured on JESD51-7, 4-layer PCB. Supply Voltage VIN .......................... 4.5V to 14V Driver Voltage VDRV ........................ 4.5V to 5.5V Logic Voltage VDD .......................... 4.5V to 5.5V Operating Junction Temp. (TJ). -40°C to +125°C MP86885 Rev. 1.01 www.MonolithicPower.com 8/31/2020 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2021 MPS. All Rights Reserved. 2 MP86885 – INTELLI-PHASE SOLUTION IN 4x6mm TQFN NOT RECOMMENDED FOR NEW DESIGNS. REFER TO MP86905 ELECTRICAL CHARACTERISTICS VIN = 12V, VDRV=VDD=5V, TA = 25°C, unless otherwise noted. Parameters IIN Shutdown Symbol IIN Off IIN Standby IIN Standby VIN Under Voltage Lockout Threshold Rising VIN Under Voltage Lockout Threshold Hysteresis IDRV Quiescent Current IDRV Shutdown Current IDD Quiescent Current IDD Shutdown Current VDD Voltage UVLO Rising VDD Voltage UVLO Hysteresis High Side Current Limit(5) Low Side Current Limit(5) EN Input Low Voltage EN Input High Voltage Dead-Time Rising(5) Dead-Time Falling(5) SYNC Current SYNC Logic High Voltage SYNC Logic Low Voltage PWM High to SW Rising Delay(5) PWM Low to SW Falling Delay(5) PWM Tristate to SW Hi-Z Delay (5) Condition VDRV=VDD=0V VDRV=VDD=5V, PWM=EN=Low Min 25 Typ 65 Max 100 Units μA 30 55 60 μA 3.4 4 4.5 V 340 IDRV Quiescent IDRV Shutdown IDD Quiescent IDD Shutdown PWM=Low PWM=Low 200 1.5 30 3.3 ILIM PWM Logic High Voltage PWM Tristate Region PWM Logic Low Voltage Current Sense Accuracy(5) Current Sense Gain Current Sense Common-Mode Voltage Range Temperature Sense Gain(5), (6) Temperature Sense Offset(5), (6) Temperature Sense Accuracy(5) VTEMP Pull-Down Current Over Temperature Protection(5) 260 3 60 4.4 0.4 2 3 8 ISYNC VSYNC=0V -50 2 -43 0.4 35 35 60 50 75 50 30 tLT tTL tHT tTH Minimum PWM Pulse Width(5) PWM Input Current 1 230 2.3 46 3.9 300 60 -25 mV IPWM VPWM=3.3V, VEN=5V VPWM=0V, VEN=5V IOUT=15A 80 -100 2.45 1.1 -90 ns 100 -80 2.0 0.50 +4 -4 10 1 VTEMP=VDD 3.5 10 -100 ±5 160 170 mA μA mA μA V mV A A V V ns ns μA V V ns ns ns μA μA V V V % μA/A V mV/°C mV °C μA °C Notes: 5) Guaranteed by design, not tested in production. The parameter is tested during parameter characterization. 6) See “Junction Temperature Sense” section for details. MP86885 Rev. 1.01 www.MonolithicPower.com 8/31/2020 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2021 MPS. All Rights Reserved. 3 MP86885 – INTELLI-PHASE SOLUTION IN 4x6mm TQFN NOT RECOMMENDED FOR NEW DESIGNS. REFER TO MP86905 PWM High Tri-State Low t Rising t Falling 35ns 35ns Vin Switch Node t LT t TL 60ns 50ns t HT t TH 75ns 50ns Vout 0V PWM Delay Diagram MP86885 Rev. 1.01 www.MonolithicPower.com 8/31/2020 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2021 MPS. All Rights Reserved. 4 MP86885 – INTELLI-PHASE SOLUTION IN 4x6mm TQFN NOT RECOMMENDED FOR NEW DESIGNS. REFER TO MP86905 PIN FUNCTIONS Pin # Name 1 PWM 2 3 4 EN CS VTEMP 5 SYNC 6 FAULT# 7 AGND 8 VDD 9 RIN 10 T1 11 BST 12-15 SW 16 VDRV 17-28 PGND 29 IN Description Pulse Width Modulation. Leave PWM floating or drive to mid-state to put SW in high impedance state. On/Off Control. Pull low to place SW in a high impedance state. Current Sense Output. Requires an external resistor. Single pin temperature sense output. Synchronous Low Switch. Leave open or pull high to enable. Pull low to enter diode emulation mode. Fault reporting on HS current limit, Over Temperature and VDD UVLO. It is an opendrain output during normal operation and pull-low when fault occurred. Low side current limit will not pull low fault pin. Analog Ground. Internal Circuitry Voltage. Connect to VDRV thru 2.2Ω resistor and decouple with 1µF capacitor to AGND. Connect AGND and PGND at this point. Current Sense Compensation. Connect a resistor from this pin to Vin to fine tune current sense gain. Test pin. Connect to ground. Bootstrap. Requires a 0.22µF to 1µF capacitor to drive the power switch’s gate above the supply voltage. Connects between SW and BST pins to form a floating supply across the power switch driver. Switch Output. Driver Voltage. Connect to 5V supply and decouple with 1µF to 4.7µF ceramic capacitor. Power Ground. Supply Voltage. Place CIN close to the device to prevent large voltage spikes at the input. MP86885 Rev. 1.01 www.MonolithicPower.com 8/31/2020 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2021 MPS. All Rights Reserved. 5 MP86885 – INTELLI-PHASE SOLUTION IN 4x6mm TQFN NOT RECOMMENDED FOR NEW DESIGNS. REFER TO MP86905 TYPICAL CHARACTERISTICS MP86885 Rev. 1.01 www.MonolithicPower.com 8/31/2020 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2021 MPS. All Rights Reserved. 6 MP86885 – INTELLI-PHASE SOLUTION IN 4x6mm TQFN NOT RECOMMENDED FOR NEW DESIGNS. REFER TO MP86905 TYPICAL PERFORMANCE CHARACTERISTICS VIN=12V, VDRV=VDD=5V, VOUT=1.2V, L=215nH, FSW=600kHz, T A=25oC, no droop, unless otherwise noted. MP86885 Rev. 1.01 www.MonolithicPower.com 8/31/2020 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2021 MPS. All Rights Reserved. 7 MP86885 – INTELLI-PHASE SOLUTION IN 4x6mm TQFN NOT RECOMMENDED FOR NEW DESIGNS. REFER TO MP86905 BLOCK DIAGRAM VDD VDDDRV BST IN EN HS Current Limit Level Shift Tri-State Enable EN PWM Internal PWM SYNC SW Control Logic RIN HS Current Limit Tri-State Enable PWM Tri-State Enable SYNC HS Current Limit T1 HSFET Internal PWM VDRV Delay EN LSFET AGND SW + PGND - Outputs 1 after inductor current zero crossing Negative Current Limit SW + - Outputs 1 if SW>1.5V 1.5V Temperature Sense Current Sense VTEMP CS FAULT# SW PGND PGND Figure 1: Functional Block Diagram MP86885 Rev. 1.01 www.MonolithicPower.com 8/31/2020 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2021 MPS. All Rights Reserved. 8 MP86885 – INTELLI-PHASE SOLUTION IN 4x6mm TQFN NOT RECOMMENDED FOR NEW DESIGNS. REFER TO MP86905 OPERATION The MP86885 is a 40A monolithic half-bridge driver with MOSFETs ideally suited for multiphase buck regulators. When the EN transitions from low to high and both VDD and VBST signals are sufficiently high, operation begins. It is recommended to use EN pin to startup and shutdown the Intelli-Phase. To put SW node in a high impedance state, let PWM pin float or drive PWM pin to mid-state. Drive the SYNC pin low to enter diode emulation mode. In diode emulation mode, the LSFET is off after inductor current crossed zero current. When HSFET over current is detected, the part will latch off. Recycling VIN/VDD or toggling EN will release the latch and restart the device. When the LSFET detects -25A current, the part will turn off the LSFET for that cycle. Current Sense The CS pin is a bi-directional current source proportional to the inductor current. Use the following equations to select the RIN resistance to connect between RIN pin and IN pin: RIN = −7.55  IL_ RIPPLE + 170(k) The CS voltage range of 1V to 3.5V is required to keep CS’s output current linearly proportional to inductor current. Use the following equations to determine a proper reference voltage and/or R CS value: 1V  ICS  RCS + VREF  3.5V ICS = IL  10  10−6 Intelli-Phase’s current sense output can be used by controller to accurately monitor the output current. The cycle-by-cycle current information from CS pin can be used for phase current balancing, over current protection and active voltage positioning (output voltage droop). Intelli-Phase’s accurate current sense can replace traditional inductor DCR current sensing scheme. In traditional inductor DCR current sense: VCS = IL  RDCR With Intelli-Phase’s CS output, VCS becomes: VCS = ICS  RCS = IL  RCS  10  10−6 t ON  (VIN − VOUT ) VOUT  (VIN − VOUT ) = L VIN  FSW  L Where the RDCR term is replaced −6 with RCS  10  10 . Figure 2 shows a circuit replacing inductor DCR sensing with IntelliPhase’s CS output. There are several advantages with this current sensing method: Where IL_RIPPLE is the peak to peak inductor ripple current. For example, if the ripple current is 10A, then the calculated RIN is 94.5kΩ and 95.3kΩ (the closest 1% resistor value) should be selected for RIN. 1. Since current sensing is done by IntelliPhase, user can select low DCR inductors and still have large current sense signal by selecting larger RCS. IL _ RIPPLE = The current sense gain is 10μA/A. In general, there is a resistor, RCS, connected from CS pin and VOUT or an external voltage which is capable to sink small current to provide enough voltage shift to meet the operating voltage on CS pin. 2. Tight DCR variation is not required. 3. CS signal is independent of impedance matching and inductor temperature. MP86885 Rev. 1.01 www.MonolithicPower.com 8/31/2020 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2021 MPS. All Rights Reserved. 9 MP86885 – INTELLI-PHASE SOLUTION IN 4x6mm TQFN NOT RECOMMENDED FOR NEW DESIGNS. REFER TO MP86905 Inductor DCR Current Sense IL Vin DrMOS L Vin DCR SW GND R PWM VL1 VOUT C OUT C PWM VCS Intelli-Phase Current Sense Vin ICS IL Intelli-Phase Vin CS L SW C OUT GND PWM VCS VOUT RCS PWM Vout (or other reference voltage) Figure 2: Replacing DCR Current Sense with Intelli-Phase’s CS Output Junction Temperature Sense The VTEMP pin is a voltage output proportional to the junction temperature. The junction temperature can be calculated from the following equation: TJUNCTION = ( VTEMP + 100mV ) , 10mV o C Be sure to measure this voltage between VTEMP and AGND pins for the most accurate reading. In multi-phase operation, the VTEMP pins of every Intelli-Phase can be connected to the temperature monitor pin of the controller. A sample circuitry is shown in Figure 3. VTEMP signals can also be used for system thermal protection as shown in Figure 4. for TJUNCTION>10oC For example, if the VTEMP voltage is 700mV, then the junction temperature of Intelli-Phase is 80oC. VTEMP can not go below 0V, so it will read 0V for junction temperature lower than 10 oC. MP86885 Rev. 1.01 www.MonolithicPower.com 8/31/2020 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2021 MPS. All Rights Reserved. 10 MP86885 – INTELLI-PHASE SOLUTION IN 4x6mm TQFN NOT RECOMMENDED FOR NEW DESIGNS. REFER TO MP86905 Intelli-Phase Power Stage Vin IntelliPhase Vin L2 VOUT VTEMP Multi-Phase Controller C OUT PWM PWM2 Temperature ADC Vin IntelliPhase Vin L1 VTEMP PWM PWM1 Figure 3: Multi-Phase Temperature Sense Utilization Program R1 and R2 to set the protection temperature VTEMP1 For System Protection R1 VTEMP2 NPN R2 Figure 4: System Thermal Protection MP86885 Rev. 1.01 www.MonolithicPower.com 8/31/2020 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2021 MPS. All Rights Reserved. 11 MP86885 – INTELLI-PHASE SOLUTION IN 4x6mm TQFN NOT RECOMMENDED FOR NEW DESIGNS. REFER TO MP86905 PCB Layout Guide Line 2. Place the VDD decoupling capacitor close to the device. Connect AGND and PGND at the PCB layout plays an important role to achieve point of VDD capacitor's ground connection. stable operation. For optimal performance, follow these guidelines. The sample layout at the end of 3. It is recommended to use 0.22µF to 1µF these guidelines can be used as a layout bootstrap capacitor and 3.3Ω bootstrap reference. resistance. Do not use capacitance values below 100nF for the BST capacitor. 1. Always place some input bypass ceramic capacitors next to the device and on the 4. Connect IN, SW and PGND to large copper same layer as the device. Do not put all of areas and use via to cool the chip to improve the input bypass capacitors on the back side thermal performance and long-term reliability. of the device. Use as many via and input 5. Keep the path of switching current short and voltage planes as possible to reduce minimize the loop area formed by the input switching spikes. Place the BST capacitor capacitor. Keep the connection between the and the VDRV capacitor as close to the SW pin and the input power ground as short device as possible. and wide as possible. Figure 5: Sample PCB Layout MP86885 Rev. 1.01 www.MonolithicPower.com 8/31/2020 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2021 MPS. All Rights Reserved. 12 SCLK EN FAULT# RICCMAX EN ICC MAX FAULT# VRHOT# ADDR IMON ALERT# SDIO VRHOT# RADDR VRRDY RIMON VRRDY ALERT# SDIO OTPG COMP RFS FSET RBOOT RTMAX MP2935 4-Phase VR12.5 PWM Controller VBOOT FB SCLK TMAX IDROOP VDD RSLOPE VOSEN GND (PAD) SLOPE CCM VCC VIDFF CPU 5V RAAM VOUT VTT IREF AAM GNDSEN PGND VIN TEMP OCPSET PWM1 PWM2 PWM3 PWM4 VCM CS4 CS3 CS2 CS1 5V 5V 5V 5V AGND VTEMP SYNC CS BST VIN BST PGND SW VIN BST PGND SW PGND SW Intelli-Phase PWM EN VDRV VDD AGND VTEMP SYNC CS VIN PGND SW Intelli-Phase PWM EN VDRV VDD AGND VTEMP SYNC CS BST Intelli-Phase PWM EN VDRV VDD AGND VTEMP SYNC CS VIN Intelli-Phase PWM EN VDRV VDD VIN VIN VIN VIN PGND VOUT MP86885 – INTELLI-PHASE SOLUTION IN 4x6mm TQFN NOT RECOMMENDED FOR NEW DESIGNS. REFER TO MP86905 TYPICAL APPLICATION CIRCUITS Figure 6: MP2935+Intelli-Phase Application Circuit MP86885 Rev. 1.01 www.MonolithicPower.com 8/31/2020 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2021 MPS. All Rights Reserved. 13 OTPD MP86885 – INTELLI-PHASE SOLUTION IN 4x6mm TQFN NOT RECOMMENDED FOR NEW DESIGNS. REFER TO MP86905 PACKAGE INFORMATION FC-TQFN (4mm x 6mm) PIN 1 ID 0.20X45º TYP PIN 1 ID MARKING PIN 1 ID INDEX AREA TOP VIEW BOTTOM VIEW SIDE VIEW NOTE: 0.20x45° 1) ALL DIMENSIONS ARE IN MILLIMETERS. 2) EXPOSED PADDLE SIZE DOES NOT INCLUDE MOLD FLASH. 3) LEAD COPLANARITY SHALL BE 0.10 MILLIMETERS MAX. 4) JEDEC REFERENCE IS MO-220. 5) DRAWING IS NOT TO SCALE. RECOMMENDED LAND PATTERN NOTICE: The information in this document is subject to change without notice. Please contact MPS for current specifications. Users should warrant and guarantee that third party Intellectual Property rights are not infringed upon when integrating MPS products into any application. MPS will not assume any legal responsibility for any said applications. MP86885 Rev. 1.01 www.MonolithicPower.com 8/31/2020 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2021 MPS. All Rights Reserved. 14
MP86885GQWT-Z 价格&库存

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MP86885GQWT-Z
  •  国内价格 香港价格
  • 5000+18.961065000+2.37106

库存:17734

MP86885GQWT-Z
  •  国内价格 香港价格
  • 1+40.588291+5.07551
  • 10+36.4639310+4.55977
  • 25+34.4717825+4.31065
  • 100+29.87509100+3.73584
  • 250+28.34308250+3.54427
  • 500+25.43217500+3.18026
  • 1000+21.448751000+2.68214
  • 2500+20.376332500+2.54804

库存:17734