MPQ1925
100V, 4A, High-Frequency,
Half-Bridge Gate Driver
DESCRIPTION
FEATURES
The MPQ1925 is a high-frequency, N-channel
MOSFET, half-bridge gate driver. The device’s
low-side MOSFET (LS-FET) and high-side
MOSFET (HS-FET) driver channels are
independently controlled, and are matched with
less than 5ns in time delay. In the case of an
insufficient supply, the device’s HS-FET and
LS-FET
under-voltage
lockout
(UVLO)
protection forces the outputs low. The
MPQ1925 also features an integrated bootstrap
(BST) diode to reduce the external component
count.
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The MPQ1925 is available
(4mmx4mm) package.
in
a
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QFN-8
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Drives an N-Channel MOSFET Half-Bridge
115V Bootstrap Voltage (VBST) Range
On-Chip Bootstrap (BST) Diode
Typical 20ns Propagation Delay
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