MPQ5066
28V, 6A, 7mΩ RDS(ON) Hot-Swap Protection
Device with Current Monitoring,
AEC-Q100 Qualified
DESCRIPTION
FEATURES
The MPQ5066 is a hot-swap protection device
designed to protect circuitry on its output from
transients on its input. It also protects its input from
undesired shorts and transients coming from its
output.
During start-up, the slew rate at the output limits
the inrush current. An external capacitor
connected to the SS pin controls the slew rate.
The maximum output load is current-limited using
a sense FET topology, and a low-power resistor
from the ISET pin to ground controls the
magnitude of the current limit. An internal charge
pump drives the gate of the power device, allowing
for a power FET with a very low on resistance of
7mΩ. The MPQ5066 includes an IMON option to
produce a voltage proportional to the current
through the power device, which is set by a
resistor from the IMON pin to ground.
Integrated 7mΩ Power MOSFET
Adjustable Current Limit (5A to 15A)
Output Current Measurement
±10% Current Monitor Accuracy
Fast Response (200ns) for Short Protection
PG Detector and FLTB Indication
PG Asserts Low when VIN = 0V
Damaged MOSFET Detection
External Soft Start
Under-Voltage Lockout
Thermal Protection
Available in a QFN-22 (3mmx5mm) Package
Available in AEC-Q100 Grade 1
APPLICATIONS
The MPQ5066’s fault protections include current
limit protection, thermal shutdown, and damagedMOSFET detection. Both the current limit and
thermal shutdown offer configurable auto-retry or
latch-off mode. The device also features undervoltage protection.
Automotive Infotainment
Automotive Clusters
Advanced Driver Assistance Systems
Automotive Systems
All MPS parts are lead-free, halogen-free, and adhere to the RoHS directive.
For MPS green status, please visit the MPS website under Quality Assurance.
“MPS”, the MPS logo, and “Simple, Easy Solutions” are trademarks of
Monolithic Power Systems, Inc. or its subsidiaries.
The MPQ5066 is available in a QFN-22
(3mmx5mm) package, and is AEC-Q100 qualified.
TYPICAL APPLICATION
VIN
21, 22
R1
VOUT
VOUT
1
EN
13-20
VIN
2
COUT
EN
AUTO
MPQ5066
PD
FB
4
12
5V
R3
11
R4
TIMER
PG
CT
5
R2
10
PG
ISET
FLTB
9
R5
FAULT
RSET
8
IMON
IMON
SS
6
CSS
GND
7
CMON
RMON
MPQ5066 Rev. 1.0
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MPQ5066 – 28V, 6A, 7mΩ RDS(ON) HOT-SWAP PROTECTION DEVICE
ORDERING INFORMATION
Part Number*
MPQ5066GQV-AEC1–Z
Package
QFN-22 (3mmx5mm)
Top Marking
See Below
MSL Rating**
1
* For Tape & Reel, add suffix –Z (e.g. MPQ5066GQV-AEC1–Z).
** Moisture Sensitivity Level Rating.
TOP MARKING
MP: MPS prefix
Y: Year code
W: Week code
5066: First four digits of the part number
LLL: Lot number
PACKAGE REFERENCE
TOP VIEW
EN
1
AUTO
2
N/C
3
TIMER
4
ISET
5
SS
6
VIN
VIN
22
21
20 VOUT
VIN
19 VOUT
VIN
18 VOUT
17 VOUT
VIN
16 VOUT
15 VOUT
VIN
GND
7
IMON
8
FLTB
9
14 VOUT
13 VOUT
VIN
12 PD
10
11
PG
FB
QFN-22 (3mmx5mm)
MPQ5066 Rev. 1.0
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MPQ5066 – 28V, 6A, 7mΩ RDS(ON) HOT-SWAP PROTECTION DEVICE
PIN FUNCTIONS
Pin #
Name
1
EN
2
AUTO
3
NC
4
TIMER
5
ISET
6
SS
7
GND
8
IMON
9
FLTB
10
PG
11
FB
12
PD
13–20
21, 22
(exposed
pads)
VOUT
VIN
Description
Enable input. Pull the EN pin above its threshold (1.8V) to enable the chip. Pull EN below
its threshold (1.6V) to shut down the chip.
Auto-reset enable. Float or pull the AUTO pin above 2.5V to enable auto-reset mode after
a fault is removed. If AUTO is grounded, the MPQ5066 latches off if a fault occurs.
Not connected. Float this pin.
Timer set. An external capacitor sets the hot-plug insertion time delay, fault timeout period,
and restart time.
Current limit set. Place a resistor from this pin to ground to set the value of the current
limit.
Soft start. An external capacitor connected to the SS pin sets the soft-start time. The
internal circuit controls the output voltage slew rate during start-up. Float this pin to set the
soft-start time at a minimum of 1ms.
Ground.
Output current monitor. Provide a voltage proportional to the current flowing through the
power device. Place a resistor to ground to set the gain. Floating this pin is not
recommended.
Fault bar. This is an open-drain output that drives to ground if an over-current fault or
thermal shutdown occurs. Pull FLTB up to an external power supply through a 100kΩ
resistor.
Power good. This is an open-drain output. Pull PG up to an external power supply through
a resistor. When PG is high, it indicates power good. When PG is low, it indicates that the
output is outside the under-voltage lockout (UVLO) window. PG starts to work when the
pull-up supply is enabled, even if VIN and EN are still disabled.
Feedback. An external resistor divider from the output sets the output voltage where the
PG pin switches. The rising threshold is 0.6V, with a 60mV hysteresis.
Output discharge. Connect to the output to provide a 500Ω load to discharge the output
when VIN is below its under-voltage lockout (UVLO) threshold, or the EN pin is within 0.6V
of the rising threshold. Floating PD disables this function.
Output. The output voltage is controlled by the IC.
Input power supply.
MPQ5066 Rev. 1.0
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MPQ5066 – 28V, 6A, 7mΩ RDS(ON) HOT-SWAP PROTECTION DEVICE
θJA
θJC
ABSOLUTE MAXIMUM RATINGS (1)
Thermal Resistance
VIN ................................................-0.3V to +36V
VOUT, PD .....................................-0.3V to +30V
All other pins ................................-0.3V to +6.5V
Continuous power dissipation (TA = 25°C) (2)
….. .. ........................................................... 2.7W
Power dissipation (TA = 25°C, 10ms single pulse)
….. ............................................................ 215W
Maximum current (TA = 25°C)……………… 25A
Junction temperature ................................150°C
Lead temperature .....................................260°C
Storage temperature ................ -65°C to +150°C
QFN-22 (3mmx5mm)
JESD51-7 (3)... ......................... 46........10.....°C/W
EV5066-QV-00A (4)..................30.........2......°C/W
Electrostatic Discharge (ESD) Rating
Human body model (HBM) ........................ ±2kV
Charged device model (CDM) ................ ±750V
Recommended Operating Conditions
Notes:
1) Absolute maximum ratings are rated under room temperature,
unless otherwise noted. Exceeding these ratings may damage
the device.
2) The maximum allowable power dissipation is a function of the
maximum junction temperature, TJ (MAX), the junction-toambient thermal resistance, θJA, and the ambient temperature,
TA. The maximum allowable continuous power dissipation at
any ambient temperature is calculated by PD (MAX) = (TJ
(MAX) - TA) / θJA. Exceeding the maximum allowable power
dissipation can lead to excessive die temperature, and the
regulator may go into thermal shutdown. Internal thermal
shutdown circuitry protects the device from permanent
damage.
3) Measured on JESD51-7, 4-layer PCB.
4) Measured on an MPS standard EVB, 8.5cmx8.5cm, 2-layer
PCB.
Input voltage operating range ............. 6V to 28V
Operating junction temp (TJ). ... -40°C to +125°C
MPQ5066 Rev. 1.0
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MPQ5066 – 28V, 6A, 7mΩ RDS(ON) HOT-SWAP PROTECTION DEVICE
ELECTRICAL CHARACTERISTICS
VIN = 12V, RSET = 10kΩ, COUT = 220μF, TJ = -40°C to +125°C, typical values are at TJ = 25°C, unless
otherwise noted.
Parameters
Supply Current
Quiescent current
Power FET
On resistance
Off-state leakage current
Symbol
IQ
Condition
Min
EN = high, no load
Fault latch-off
EN = 0V, VIN = 12V
RDS(ON)
IOFF
Thermal Shutdown
Shutdown temperature (5)
Hysteresis (5)
Under-Voltage Protection
Under-voltage lockout
VUVLO
(UVLO) threshold
UVLO hysteresis
VUVLOHYS
AUTO Pin
Low-level input voltage
VAUTOL
High-level input voltage
VAUTOH
Soft Start
SS pull-up current
ISS
Current Limit
Current limit in normal
ILIMIT_NO
operation
Current monitor accuracy
Current limit response
time (5)
Secondary current limit (5)
ILIMIT_H
Short-circuit protection
response time (5)
Timer
Upper threshold voltage
VTMRH
Lower threshold voltage
VTMRL
Fault restart duty cycle
Insertion delay charge
IINSERT
current
Fault detection charge
IFLTD
current
Fault restart sink current
IFLTS
Discharge RON
Typ
Max
Units
1
0.7
1
2
1.2
10
mA
mA
μA
7
12
mΩ
1
μA
VIN = 28V, EN = 0V,
OUT = 0V, TJ = 25°C
167
28
Auto-retry mode only
Rising
Falling
2.7
Latch-off mode
Auto-retry mode
2.5
4.15
3.8
250
°C
°C
5.5
5
V
V
mV
1
V
V
3
6
9
μA
RSET = 10kΩ
10.5
12.5
14.5
A
IOUT = 6A
-10
+10
%
ISS changes with input
ILIMIT = 3A, add a 3Ω load
20
μs
Any value of RSET
25
A
200
ns
Over-current restart cycles
IOUT < ILIMIT
1
0.09
0.1
1.23
0.20
0.25
1.4
0.35
0.5
V
V
%
15
40
60
μA
80
200
300
μA
0.15
15
0.5
35
0.8
80
μA
Ω
MPQ5066 Rev. 1.0
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MPQ5066 – 28V, 6A, 7mΩ RDS(ON) HOT-SWAP PROTECTION DEVICE
ELECTRICAL CHARACTERISTICS (continued)
VIN = 12V, RSET = 10kΩ, COUT = 220μF, TJ = -40°C to +125°C, typical values are at TJ = 25°C, unless
otherwise noted.
Parameters
Symbol
Enable
Rising threshold
VENRS
Falling threshold
VENFS
Hysteresis
VENHYS
FB (Power Good Feedback)
Feedback rising threshold
VFBRS
Feedback falling threshold
VFBFS
Hysteresis
VFBHYS
Fault Bar/Power Good
Low-level output voltage
VOL
Off-state leakage current
IFLT_LKG
Fault bar propagation
delay
PG low-level output
voltage
VOL_100
VOL_10
Condition
Min
Typ
Max
Units
1.4
1.2
1.8
1.6
200
2.2
2
V
V
mV
0.51
0.45
0.6
0.54
60
0.69
0.63
V
V
mV
0.1
0.3
1
V
μA
20
40
μs
500
800
mV
600
800
mV
1mA sink current
VFLTB = 5V
Pull up ISET from 0V to 1V
VIN = 0V, pull PG up to 3.3V through a
100kΩ resistor
VIN = 0V, pull PG up to 3.3V through a
10kΩ resistor
5
Note:
5) Derived from bench characterization. Not tested in production.
MPQ5066 Rev. 1.0
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MPQ5066 – 28V, 6A, 7mΩ RDS(ON) HOT-SWAP PROTECTION DEVICE
TYPICAL CHARACTERISTICS
VIN = 12V, COUT = 220μF, CT = 220nF, RSET = 10kΩ, unless otherwise noted.
MPQ5066 Rev. 1.0
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MPQ5066 – 28V, 6A, 7mΩ RDS(ON) HOT-SWAP PROTECTION DEVICE
TYPICAL PERFORMANCE CHARACTERISTICS
VIN = 12V, COUT = 220μF, CT = 220nF, CSS = 10nF, RSET = 10kΩ, TA = 25°C, unless otherwise noted.
RDS(ON) vs. Load Current
7.6
7.6
7.4
7.4
RDS(ON) (mΩ)
RDS(ON) (mΩ)
RDS(ON) vs. Input Voltage
7.2
7.0
7.2
7.0
6.8
6.8
6.6
6.6
4
8
12
16
20
24
28
0
1
INPUT VOLTAGE (V)
Efficiency vs. Load Current
4
5
6
Power Loss vs. Load Current
1000
99.0
800
POWER LOSS (mW)
EFFICIENCY (%)
3
LOAD CURRENT (A)
99.5
98.5
98.0
Vin=8V
Vin=12V
Vin=16V
97.5
2
600
400
Vin=8V
Vin=12V
Vin=16V
200
0
97.0
0
1
2
3
4
OUTPUT CURRENT (A)
5
6
0
1
2
3
4
5
6
OUTPUT CURRENT (A)
MPQ5066 Rev. 1.0
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MPQ5066 – 28V, 6A, 7mΩ RDS(ON) HOT-SWAP PROTECTION DEVICE
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
VIN = 12V, COUT = 220μF, CT = 220nF, CSS = 10nF, RSET = 10kΩ, TA = 25°C, unless otherwise noted.
MPQ5066 Rev. 1.0
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8/6/2020
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MPQ5066 – 28V, 6A, 7mΩ RDS(ON) HOT-SWAP PROTECTION DEVICE
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
VIN = 12V, COUT = 220μF, CT = 220nF, CSS = 10nF, RSET = 10kΩ, TA = 25°C, unless otherwise noted.
MPQ5066 Rev. 1.0
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MPQ5066 – 28V, 6A, 7mΩ RDS(ON) HOT-SWAP PROTECTION DEVICE
FUNCTIONAL BLOCK DIAGRAM
VIN
VCC
Regulator
Charge
Pump
:
1
1
:
4331
4µA
VCC
VOUT
IMON
Fast-Off Compensation
Soft Start
6.9kΩ
450kΩ
230Ω
300Ω
1.32V
50kΩ
Logic
Current-Limit
Amplifier
VIN/900kΩ
ISET
SS
615mV
PG
FLTB
UVLO
PD
Control Logic
500Ω
EN
VCC
VCC
VCC
200µA
Thermal
Sense
40µA
8µA
AUTO
TIMER
VREF_TSD
FB
0.5µA
0.6V
GND
Figure 1: Functional Block Diagram
MPQ5066 Rev. 1.0
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MPQ5066 – 28V, 6A, 7mΩ RDS(ON) HOT-SWAP PROTECTION DEVICE
OPERATION
The MPQ5066 protects circuitry on its output
from transients on its input. It also protects its
input from undesired shorts and transients
coming from its output. The device provides an
integrated solution to monitor the input voltage,
output voltage, output current, and die
temperature. This means an external currentsense resistor, power MOSFET, and thermal
sense device are not required for this solution.
Current Limit
The MPQ5066 provides a constant current limit
that can be configured by an external resistor. If
the device reaches its current limit threshold, the
internal circuit regulates the gate voltage to hold
the current in the MOSFET constant. To limit the
current, the gate-to-source voltage must drop
from 5V to about 1V. The typical response time
is about 20µs, and the output current may have
a small overshoot during this time period.
If the current limit is triggered, the fault timer
starts. If the output current falls below the current
limit threshold before the end of the fault timeout
period, the MPQ5066 resumes normal operation.
If the current limit duration remains after the fault
timeout period, the MOSFET turns off. The
subsequent behavior relates to the AUTO pin
configuration. If the temperature reaches the
thermal protection threshold during the fault
timeout period, the MOSFET turns off.
When the AUTO pin is floating, the part functions
in auto-retry mode for over-current protection
(OCP). The part enters latch-off mode if the
device detects an OC condition and pulls the
AUTO pin to ground.
(167°C), the power MOSFETs shut down. Once
the temperature drops below its lower threshold
(139°C), the chip is enabled again.
Short-Circuit Protection
If the load current increases rapidly due to a
short circuit, the current may significantly exceed
the current limit threshold before the control loop
can respond. If the current reaches the 25A
secondary current limit level, a fast turn-off circuit
activates to turn off the MOSFET using a 100mA
pull-down gate discharge current (see Figure 2).
This limits the peak current through the switch to
limit the input voltage drop. The total short circuit
response time is about 200ns. The FLTB pin
switches low once it reaches a 25A current limit,
and asserts low until the circuit resumes normal
operation.
Fault Timer and Restart
When the current reaches its over-current limit
threshold, a 200µA fault timer current source
charges the external capacitor (CT) at the TIMER
pin. If the current limit state is removed before
the TIMER pin reaches 1.23V, the MPQ5066
returns to normal operation, and a low-value
resistor discharges CT after the TIMER voltage
reaches 1.23V. If the current limit state continues
after the TIMER pin voltage reaches 1.23V, the
MOSFET switches off. The subsequent restart
procedure then depends on the selected retry
configuration.
If the AUTO pin is connected to ground or pulled
low, the MPQ5066 latches off. Restart the input
power or cycle the EN signal to resume normal
function.
If the device reaches either its current limit or its
over-temperature threshold, the FLTB pin is
driven low with a 20μs propagation delay to
indicate a fault. The desired current limit during
normal operation is set by the external current
limit resistor.
Floating the AUTO pin or pulling it above 2.5V
causes the device to operate in hiccup mode
(see Figure 3). At the end of the fault timeout
period, the MOSFET turns off, and a low-current
(0.5µA) sink discharges the external capacitor
(CT).
Thermal Shutdown
Thermal shutdown is implemented to prevent the
chip from thermal runaway. If the silicon die
temperature exceeds its upper threshold
If the TIMER voltage reaches the low threshold
(0.2V), the part restarts. If the fault condition
remains, the fault timeout period and restart
timer repeat.
MPQ5066 Rev. 1.0
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MPQ5066 – 28V, 6A, 7mΩ RDS(ON) HOT-SWAP PROTECTION DEVICE
Figure 2: Over-Current Protection (Latch-Off Mode, AUTO = Low)
Figure 3: Over-Current Protection (Auto-Retry Mode, AUTO = High)
MPQ5066 Rev. 1.0
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MPQ5066 – 28V, 6A, 7mΩ RDS(ON) HOT-SWAP PROTECTION DEVICE
Power Good (PG)
Power good (PG) indicates whether the output
voltage is in the normal range relative to the input
voltage. It is the open drain of a MOSFET. Pull
the PG pin up to the external power supply
through a 100kΩ resistor. During start-up, PG’s
output is driven low. This directs the system to
remain off, and minimizes the output load to
reduce inrush current and power dissipation
during start-up.
The PG signal is pulled high when the device
reaches all of the following conditions:
VFB > 0.6V
VGS > 3V
VOUT > VIN - 1V
and EN is disabled. Use a 100kΩ pull-up resistor
for PG and FLTB.
Start-Up Sequence
For hot-swap applications, the MPQ5066’s input
can experience a voltage spike or transient
during the hot swap. This spike is caused by the
parasitic inductance of the input trace and the
input capacitor. An insertion delay determined by
the external capacitor at the TIMER pin stabilizes
the input voltage.
The input voltage rises immediately, and a 30Ω
resistor pulls the internal VGS voltage low (see
Figure 4).
Then the system can draw full power.
If the FB voltage drops below 0.54V, the
MOSFET’s VGS voltage falls below 3V, or the
output voltage drops below VIN - 1V, PG is pulled
low.
The PG output is also pulled low when either the
EN pin is below its threshold or input undervoltage lockout (UVLO) is triggered.
With no input, PG remains at logic low in the
presence of a pull-up supply.
The FLTB Pin
The fault bar (FLTB) pin is an open-drain output
used to indicate whether a fault has occurred.
Pull the FLTB pin up to the external power supply
through a 100kΩ resistor.
When the device reaches its current limit, the die
temperature exceeds the thermal shutdown
threshold, or the MOSFET is shorted before
start-up, the fault output is driven low with a 20µs
propagation delay. If a short occurs and the
current reaches its 25A secondary current limit,
FLTB goes low with an 8μs delay.
FLTB goes high when the MPQ5066 resumes
normal operation, which means the output
voltage has exceeded the set voltage of the PG
rising threshold and the MOSFET is fully on (VGS >
3V).
Figure 4: Start-Up Sequence
The TIMER pin charges through a 40µA
constant-current source when the input voltage
reaches its UVLO threshold. When the TIMER
pin voltage reaches 1.23V, a 4µA current source
pulls up the MOSFET’s gate-source voltage.
Meanwhile, the TIMER pin’s voltage drops. Once
the gate voltage reaches its threshold (VGSTH),
the output voltage rises. The soft-start capacitor
determines the rising time.
Soft Start
A capacitor connected to the SS pin determines
the soft-start time: When the insertion delay time
ends, a constant-current source that is
proportional to the input voltage ramps up the
voltage on the SS pin. The output voltage rises
at a similar slew rate to the SS voltage.
External Pull-Up Voltage for PG and FLTB
PG and FLTB require an external power supply.
The open-drain output of PG can work well with
an external pull-up voltage, even when VIN = 0V
MPQ5066 Rev. 1.0
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MPQ5066 – 28V, 6A, 7mΩ RDS(ON) HOT-SWAP PROTECTION DEVICE
The SS capacitor value can be calculated with
Equation (1):
CSS
10 t SS
RSS
(1)
Where tSS is the soft-start time, and RSS = 2MΩ.
For example, a 100nF capacitor gives a soft-start
time of 20ms.
If the load capacitance is extremely large, the
current required to maintain the preset soft start
exceeds the current limit. At this point, the load
capacitor and the current limit control the rising
time.
Float the SS pin to generate a fast ramp-up
voltage. A 4μA current source pulls up the gate
of the MOSFET. The gate charge current
controls the output voltage rising time. The
approximate soft-start time is about 1ms, which
is the minimum soft-start time.
The EN Pin
When the EN pin is above its rising threshold, the
part is enabled; when EN is below that threshold,
the part is disabled.
If EN drops below 0.6V, the chip goes into the
lowest shutdown current mode. If EN is above
0.6V but below its rising threshold, the chip
remains in shutdown mode with a slightly larger
current.
When EN enables the part, the insertion delay
timer starts. When the insertion delay time ends,
the internal 4μA current source charges the
MOSFET’s gate. Charging takes about 1.5ms for
VGS to reach its threshold. Then the output
voltage rises following the soft-start slew rate.
Damaged MOSFET Detection
The MPQ5066 can detect a shorted pass
MOSFET during start-up by treating an output
voltage that exceeds VIN - 1V during start-up as
a short on the MOSFET. The FLTB pin goes low
to indicate a fault condition, and the MOSFET
remains off. Once VOUT ≤ VIN - 1V, the device
starts up and resumes normal operation.
5.0V, the output of the regulator is in full
regulation. Lower VIN values result in lower
output voltages. The regulator is enabled when
VIN exceeds its UVLO threshold and EN is high.
In EN shutdown mode, the internal VCC
regulator is disabled to reduce power dissipation.
The PD Pin
When the PD pin connects to the output, the part
is in pull-down mode. If VIN is below its UVLO
threshold, or the EN pin is between 0.6V and its
rising threshold in this mode, an integrated 500Ω
pull-down resistor attached to the output
discharges the output. Add a resistor between
the PD pin and the output for a slower output
drop. If the PD pin is floating, pull-down mode is
disabled.
The AUTO Pin
When the AUTO pin is floating, the part works in
auto-retry mode. In auto-retry mode, the part
turns off if it exceeds its thermal limit or current
limit timeout. The part turns back on when the
part cools by 28°C or the restart timer completes.
If the AUTO pin is tied to ground, the part works
in latched fault mode. In latched fault mode, a
thermal fault or current limit fault latches the
output off until EN is toggled from low to high or
the input voltage restarts.
Under-Voltage Lockout (UVLO)
If the input supply falls below the under-voltage
lockout (UVLO) threshold, the output is disabled
and the PG pin goes low. If the supply exceeds
the UVLO threshold, the output is enabled and
PG is released.
Monitoring the Output Current
The IMON pin provides a voltage proportional to
the output current (the current through the power
device). Tie a resistor to ground to set the output
gain. Place a 100nF capacitor from IMON to
GND to smooth the indicator voltage.
Internal VCC Sub-Regulator
The MPQ5066 has an internal 5V linear subregulator that powers low-voltage circuitry. This
regulator takes the input voltage (VIN) and
operates in the full VIN range. When VIN is above
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MPQ5066 – 28V, 6A, 7mΩ RDS(ON) HOT-SWAP PROTECTION DEVICE
APPLICATION INFORMATION
Setting the Current Limit (RSET)
The MPQ5066’s current limit value should
exceed the normal maximum load current. This
allows for tolerance in the current-sense value.
Estimate the current limit with Equation (2):
ILIMIT =
0.6(V)
20 104 (A)
RSET
(2)
Table 1 shows the bench results from the
evaluation board.
Table 1: Current Limit vs. Current Limit Resistor
Current Limit
Resistor (kΩ)
Current Limit (A)
7.5
10
20
15.9
12
6.08
Figure 5 shows the relationship between the set
resistance (RSET) and the current limit.
Current Monitoring
The MPQ5066 provides MOSFET current
monitoring. Place a resistor (RIMON) to ground to
set the output gain. IIMON can be calculated with
Equation (3):
IIMON
IPOWERFET
105
(3)
Where IPOWERFET is the power MOSFET current.
The IMON pin provides a voltage proportional to
the output current. Place a 10kΩ resistor from the
IMON pin to GND to obtain a value of 100mV/A,
which is the voltage proportional to the output
current. Place a 100nF capacitor from IMON to
GND to smooth the indicator voltage.
Design Example
Figure 7 on page 18 shows the detailed
application schematic. For the typical
performance and circuit waveforms, see the
Typical Performance Characteristics section on
page 8. For more detailed device applications,
refer to the related evaluation board datasheet.
Figure 5: RSET vs. Current Limit
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MPQ5066 – 28V, 6A, 7mΩ RDS(ON) HOT-SWAP PROTECTION DEVICE
PCB Layout Guidelines (6)
Efficient PCB layout is crucial for proper device
performance. For the best results, refer to Figure
6 and follow the guidelines below:
1. Place the high-current paths (GND, IN, and
OUT) very close to the device using short,
direct, and wide traces.
2. Place a small bypass capacitor next to VIN
to minimize transients that may occur on the
input supply line.
3. Place the external feedback resistors next to
the FB pin.
Top Layer and Top Silk
4. Avoid placing any vias on the FB trace.
5. Connect the IN and GND pads to a large
copper
plane
to
improve
thermal
performance.
6. Place the input and output capacitors as
close to the device as possible to minimize
the effects of parasitic inductance.
7. Put vias on the thermal pad, and provide a
large copper area near the IN pin to improve
thermal performance. Ensure that all pins are
connected to obtain equal current distribution
in all legs.
Bottom Layer and Bottom Silk
Figure 6: Recommended PCB Layout
8. Put vias on the thermal pad, and provide a
large copper area near the OUT pin to
improve thermal performance. Ensure that
all pins are connected to obtain equal current
distribution in all legs.
Note:
6) The recommended PCB layout is based on the Typical
Application Circuit on page 18.
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MPQ5066 – 28V, 6A, 7mΩ RDS(ON) HOT-SWAP PROTECTION DEVICE
TYPICAL APPLICATION CIRCUIT
U1
VIN = 12V
21
C1A
10µF
C1B
10µF
C1C
100nF
22
VOUT
VOUT
VOUT
VOUT
VOUT
VOUT
VOUT
VOUT
VIN
VIN
VOUT
20
19
18
17
16
15
14
13
R3
0Ω
1
CN2
2
AUTO
VCC
PD
220nF
4
R7
10kΩ
5
GND
AUTO
GND
11
NC
PG
10
R4
510kΩ
GND
+5V
TIMER
ISET
FLTB
9
R5 100kΩ
PG
FAULT
6
SS
IMON
8
IMON
R6
10kΩ
GND
C3
220µF
R2
15.4kΩ
CN1
7
10nF
12
MPQ5066
FB
3
C5
C6
EN
GND
GND
3
2
1
1
EN
2
GND
R1
180kΩ
C2
4.7µF
C4
100 nF
GND
GND
Figure 7: Typical Application Circuit
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MPQ5066 – 28V, 6A, 7mΩ RDS(ON) HOT-SWAP PROTECTION DEVICE
OUTLINE DRAWING FOR 22L FCQFN (3X5MM)
PACKAGEPACKAGE
INFORMATION
MF-PO-D-0136 revision 1.0
QFN-22 (3mmx5mm)
PIN 1 ID
0.125X45º TYP
PIN 1 ID
MARKING
PIN 1 ID
INDEX AREA
BOTTOM VIEW
TOP VIEW
SIDE VIEW
NOTE:
0.125X45º
1) ALL DIMENSIONS ARE IN MILLIMETERS.
2) EXPOSED PADDLE SIZE DOES NOT
INCLUDE MOLD FLASH.
3) LEAD COPLANARITY SHALL BE 0.10
MILLIMETERS MAX.
4) JEDEC REFERENCE IS MO-220.
5) DRAWING IS NOT TO SCALE.
RECOMMENDED LAND PATTERN
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MPQ5066 – 28V, 6A, 7mΩ RDS(ON) HOT-SWAP PROTECTION DEVICE
CARRIER INFORMATION
Part Number
MPQ5066GQV-AEC1–Z
Package
Description
QFN-22
(3mmx5mm)
Quantity/
Reel
Reel
Diameter
Carrier Tape
Width
Carrier Tape
Pitch
5000
13in
12mm
8mm
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MPQ5066 – 28V, 7mΩ RDS(ON) HOT-SWAP PROTECTION DEVICE
Revision History
Revision #
1.0
Revision
Date
8/6/2020
Description
Initial Release
Pages
Updated
-
Notice: The information in this document is subject to change without notice. Please contact MPS for current specifications.
Users should warrant and guarantee that third-party Intellectual Property rights are not infringed upon when integrating MPS
products into any application. MPS will not assume any legal responsibility for any said applications.
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