MPQ6610
55V, 3A, Half-Bridge Power Driver,
AEC-Q100 Qualified
DESCRIPTION
FEATURES
The MPQ6610 is a half-bridge driver with
current measurement and regulation features. It
can operate from a 4V to 55V supply voltage,
and can deliver up to 3A of output current
(depending on the package, PCB design, and
ambient temperature). The MPQ6610 can be
used to drive brushed DC motors, solenoids, or
other loads.
An internal current-sense circuit provides an
output with a voltage that is proportional to the
load current. Cycle-by-cycle current regulation
and limiting are also provided. These features
do not require the use of a low-Ohmic shunt
resistor.
Internal diagnostic and protection features
include open-load detection, over-current
protection (OCP), under-voltage
lockout
(UVLO), and thermal shutdown.
The MPQ6610 is available in 8-pin TSOT23
and SOIC-8 packages. Note that due to the
small pin spacing, the TSOT23 package is only
recommended for applications up to 45V,
unless conformal coating or encapsulation is
used.
Wide 4V to 55V Input Voltage Range
3A Maximum Output Current
Internal Half-Bridge Driver
Cycle-by-Cycle Current Regulation/Limiting
Low On Resistance (High Side: 100mΩ,
Low Side: 120mΩ)
No Control Power Supply Required
Simple, Versatile Logic Interfaces
Inputs Compatible with 2.5V, 3.3V, and 5V
Logic
Over-Current Protection (OCP)
Open-Load Detection
Thermal Shutdown
Under-Voltage Lockout (UVLO)
Fault Indication Output
Thermally Enhanced Package
Available in TSOT23 and SOIC-8 Packages
Available in AEC-Q100 Grade 1
APPLICATIONS
Solenoid Drivers
Relay Drivers
Brushed DC Motor Drivers
All MPS parts are lead-free, halogen-free, and adhere to the RoHS directive. For
MPS green status, please visit the MPS website under Quality Assurance.
“MPS”, the MPS logo, and “Simple, Easy Solutions” are trademarks of
Monolithic Power Systems, Inc. or its subsidiaries.
TYPICAL APPLICATION
VIN
IN
EN
µC
VIN
MPQ6610
nFAULT
BST
ISET
OUT
GND
MPQ6610 Rev. 1.0
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11/20/2020
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1
MPQ6610 – 55V, 3A HALF-BRIDGE DRIVER, AEC-Q100 QUALIFIED
ORDERING INFORMATION
Part Number*
MPQ6610GJ-AEC1*
MPQ6610GS-AEC1**
Package
TSOT23-8
SOIC-8
Top Marking
See Below
See Below
MSL Rating
1
* For Tape & Reel, add suffix –Z (e.g. MPQ6610GJ-AEC1–Z).
** For Tape & Reel, add suffix –Z (e.g. MPQ6610GS-AEC1–Z).
TOP MARKING (MPQ6610GJ-AEC1)
AVR: Product code of MPQ6610GJ-AEC1
Y: Year code
TOP MARKING (MPQ6610GS-AEC1)
MP6610: Part number
LLLLLLLL: Lot number
MPS: MPS prefix
Y: Year code
WW: Week code
PACKAGE REFERENCE
TSOT23-8
SOIC-8
TOP VIEW
TOP VIEW
EN
1
8
BST
BST
1
8
EN
IN
2
7
VIN
VIN
2
7
IN
ISET
3
6
OUT
OUT
3
6
ISET
nFAULT
4
5
GND
GND
4
5
nFAULT
TSOT23-8
SOIC-8
MPQ6610 Rev. 1.0
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2
MPQ6610 – 55V, 3A HALF-BRIDGE DRIVER, AEC-Q100 QUALIFIED
PIN FUNCTIONS
Pin #
(TSOT23)
Pin #
(SOIC-8)
Name
1
8
EN
2
7
IN
3
6
ISET
4
5
nFAULT
5
6
4
3
GND
OUT
7
2
VIN
8
1
BST
Description
H-bridge enable input. Drive EN high to enable the half-bridge driver.
The EN pin is pulled down with an internal resistor.
H-bridge input pin. Drive IN high to drive the output high. The IN pin is
pulled down with an internal resistor.
Current configuration resistor. Connect a resistor from ISET to ground
to set the current limit and ISET pin voltage scaling.
Fault indication. The nFAULT pin is an open drain. It is logic low if a fault
condition (e.g. over-current protection [OCP], over-temperature protection
[OTP], or open load) occurs.
System ground connection.
Output terminal.
Input supply voltage. Decouple VIN to GND with a minimum 100nF
ceramic capacitor.
Bootstrap pin. Connect a 100nF capacitor to the BST and OUT pins.
ABSOLUTE MAXIMUM RATINGS (1)
Supply voltage (VIN) ......................-0.3V to +65V
OUT voltage (VOUT) .......................-0.7V to +65V
BST ........................................... VIN to VIN + 5.7V
ISET .............................................-0.3V to +5.5V
All other pins to GND ...................-0.3V to +6.5V
Continuous power dissipation (TA = 25°C) (2)
TSOT23 package………….………........... 1.25W
SOIC package……………………........... 1.302W
Storage temperature ................ -55°C to +150°C
Junction temperature ................................150°C
Lead temperature (solder) ........................260°C
ESD Ratings
Human body model (HBM) .......................... 2kV
Charged device model (CDM)..................±750V
θJA
θJC
TSOT23 package...................100.......55...°C/W
SOIC package.........................96........45...°C/W
Thermal Resistance (4)
Notes:
1) Exceeding these ratings may damage the device.
2) The maximum allowable power dissipation is a function of the
maximum junction temperature, TJ (MAX), the junction-toambient thermal resistance, θJA, and the ambient
temperature, TA. The maximum allowable continuous power
dissipation at any ambient temperature is calculated by P D
(MAX) = (TJ (MAX) - TA) / θJA. Exceeding the maximum
allowable power dissipation can cause excessive die
temperature, and the regulator may go into thermal shutdown.
Internal thermal shutdown circuitry protects the device from
permanent damage.
3) The device is not guaranteed to function outside of its
operating conditions.
4) Measured on JESD51-7, 4-layer PCB.
Recommended Operating Conditions (3)
Supply voltage (VIN) (SOIC) ................ 4V to 55V
Supply voltage (VIN) (SOT23) ............. 4V to 45V
Output current (IOUT) ..................................... ±3A
Operating junction temp (TJ) .... -40°C to +125°C
MPQ6610 Rev. 1.0
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11/20/2020
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3
MPQ6610 – 55V, 3A HALF-BRIDGE DRIVER, AEC-Q100 QUALIFIED
ELECTRICAL CHARACTERISTICS
VIN = 24V, TA = -40°C to +125°C, unless otherwise noted.
Parameter
Power Supply
Symbol
Input supply voltage
VIN
Quiescent current
Internal MOSFETs
IQ
RHS
Output on resistance
RLS
Body diode forward
voltage
Control Logic
Input logic low threshold
Input logic high
threshold
Logic input current
VF
Condition
SOIC-8 package
TSOT23 package
VIN = 24V, EN = 0, no load current
Min
Typ
Max
1.3
55
45
5
mA
100
120
120
150
120
200
150
256
mΩ
mΩ
mΩ
mΩ
1.1
V
0.8
V
4
4
VIN = 24V, IOUT = 1A, TJ = 25°C
VIN = 24V, IOUT = 1A, TJ = 125°C
VIN = 24V, IOUT = 1A, TJ = 25°C
VIN = 24V, IOUT = 1A, TJ = 125°C
IOUT = 1A
VIL
VIH
IIN(H)
IIN(L)
Internal pull-down
RPD
resistance
nFault Output (Open-Drain Output)
Output low voltage
VOL
Output high leakage
IOH
current
Protection Circuits
VUV_RISE
UVLO rising threshold
VUV_HYS
UVLO hysteresis
VOV_RISE
OVP rising threshold
VOV_YS
OVP hysteresis
IOCP1
Over-current trip level
IOCP2
Over-current deglitch
tOCP
time (5)
Over-current retry time
tOCPR
Thermal shutdown
TTSD
Thermal shutdown
∆TTSD
hysteresis
Open-load current
IOLD
detection
Open-load detection
VOLD
threshold
2
VIH = 5V
VIL = 0.8V
Units
V
V
6
14
4
530
µA
µA
kΩ
IOUT = 5mA
0.8
V
VOUT = 3.3V
1
µA
4.1
V
mV
V
mV
A
A
300
55
65
900
Sink
Source
OUT = low
OUT = high, VIN = 24V
3
3
1
µs
1.6
165
ms
°C
15
°C
90
µA
1
21.5
1.5
23.2
V
Notes:
5) Not tested in production.
MPQ6610 Rev. 1.0
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11/20/2020
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4
MPQ6610 – 55V, 3A HALF-BRIDGE DRIVER, AEC-Q100 QUALIFIED
ELECTRICAL CHARACTERISTICS (continued)
VIN = 24V, TA = -40°C to +125°C, unless otherwise noted.
Parameter
Current Control
Off time
Blanking time
ISET current
Current trip voltage
Symbol
tITRIP
tBLANK
IISET
VITRIP
Condition
Min
Typ
69
82
83
82
1.4
16.5
1
90
102
104
103
1.5
After VITRIP is reached
HS source, IOUT = 1A
HS sink, IOUT = 1A
LS source, IOUT = 1A
LS sink, IOUT = 1A
At ISET pin
MPQ6610 Rev. 1.0
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Max
Units
µs
µs
118
131
130
129
1.6
µA/A
V
5
MPQ6610 – 55V, 3A HALF-BRIDGE DRIVER, AEC-Q100 QUALIFIED
TYPICAL CHARACTERISTICS
Quiescent Current vs. Temperature
VIN UVLO Rising Threshold vs.
Temperature
VIN = 24V
VIN UVLO RISING THRESHOLD
(V)
1.5
3.95
1.4
1.3
IQ (mA)
4
3.9
3.85
1.2
1.1
3.8
3.75
1
0.9
3.7
3.65
0.8
-50
-20
10
40
70
100
3.6
130
-50
-20
TEMPERATURE (°C)
OVP Rising Threshold vs.
Temperature
70
100
130
1.6
CURRENT TRIP VOLTAGE (V)
OVP RISING THRESHOLD (V)
40
Current Trip Voltage vs. Temperature
63
62.5
62
61.5
61
60.5
60
59.5
59
58.5
58
-50
-20
10
40
70
100
1.58
1.56
1.54
1.52
1.5
1.48
1.46
1.44
1.42
1.4
-50
130
-20
10
40
70
100
130
TEMPERATURE (°C)
TEMPERATURE (°C)
ISET Current vs. Temperature
ISET Current vs. Temperature
High-side source current, IOUT = 1A
High-side sink current, IOUT = 1A
92
104
91.5
103
ISET CURRENT (µA)
ISET CURRENT (µA)
10
TEMPERATURE (°C)
91
90.5
90
89.5
89
88.5
102
101
100
99
98
97
88
96
-50
-20
10
40
70
TEMPERATURE (°C)
100
130
-50
-20
10
40
70
100
130
TEMPERATURE (°C)
MPQ6610 Rev. 1.0
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MPQ6610 – 55V, 3A HALF-BRIDGE DRIVER, AEC-Q100 QUALIFIED
TYPICAL CHARACTERISTICS (continued)
ISET Current vs. Temperature
ISET Current vs. Temperature
Low-side sink current, IOUT = 1A
105
103
104.5
102.8
104
ISET CURRENT (µA)
ISET CURRENT (µA)
Low-side source current, IOUT = 1A
103.5
103
102.5
102
101.5
102.4
102.2
102
101.8
101.6
101.4
101.2
101
101
-50
-20
10
40
70
100
-50
130
-20
10
40
70
100
130
TEMPERATURE (°C)
TEMPERATURE(° C)
HS On Resistance vs. Temperature
LS On Resistance vs. Temperature
IOUT = 1A
IOUT = 1A
140
135
130
125
120
115
110
105
100
95
90
85
80
180
LS ON RESISTANCE (mΩ)
HS ON RESISTANCE (mΩ)
102.6
170
160
150
140
130
120
110
100
-50
-20
10
40
70
TEMPERATURE (°C)
100
130
-50
-20
10
40
70
100
130
TEMPERATURE (°C)
MPQ6610 Rev. 1.0
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11/20/2020
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MPQ6610 – 55V, 3A HALF-BRIDGE DRIVER, AEC-Q100 QUALIFIED
TYPICAL PERFORMANCE CHARACTERISTICS
VIN = 24V, EN = high, IN = 20kHz with 50% duty, RISET = 10kΩ, resistor + inductor load: 10Ω + 2mH,
TA = 25°C, unless otherwise noted.
Steady State
Steady State
Load to GND
Load to VIN
CH1: IN
2V/div.
CH1: IN
2V/div.
CH2: VOUT
20V/div.
CH2: VOUT
20V/div.
CH3: VISET
500mV/div.
CH3: VISET
500mV/div.
CH4: IOUT
500mA/div.
CH4: IOUT
500mA/div.
20μs/div.
20μs/div.
Power Ramping Up
Power Ramping Up
Load to GND
Load to VIN
CH1: VIN
20V/div.
CH2: VOUT
20V/div.
CH1: VIN
20V/div.
CH2: VOUT
20V/div.
CH3: VISET
500mV/div.
CH3: VISET
500mV/div.
CH4: IOUT
500mA/div.
CH4: IOUT
500mA/div.
20ms/div.
20ms/div.
Power Ramping Down
Power Ramping Down
Load to GND
Load to VIN
CH1: VIN
20V/div.
CH2: VOUT
20V/div.
CH1: VIN
20V/div.
CH2: VOUT
20V/div.
CH3: VISET
500mV/div.
CH3: VISET
500mV/div.
CH4: IOUT
500mA/div.
CH4: IOUT
500mA/div.
10ms/div.
10ms/div.
MPQ6610 Rev. 1.0
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MPQ6610 – 55V, 3A HALF-BRIDGE DRIVER, AEC-Q100 QUALIFIED
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
VIN = 24V, EN = high, IN = 20kHz with 50% duty, RISET = 10kΩ, resistor + inductor load: 10Ω + 2mH,
TA = 25°C, unless otherwise noted.
Start-Up through EN
Start-Up through EN
Load to GND
Load to VIN
CH1: EN
2V/div.
CH1: EN
2V/div.
CH2: VOUT
20V/div.
CH2: VOUT
20V/div.
CH3: VISET
1V/div.
CH3: VISET
1V/div.
CH4: IOUT
500mA/div.
CH4: IOUT
500mA/div.
200μs/div.
200μs/div.
Shutdown through EN
Shutdown through EN
Load to GND
Load to VIN
CH1: EN
2V/div.
CH1: EN
2V/div.
CH2: VOUT
20V/div.
CH2: VOUT
20V/div.
CH3: VISET
1V/div.
CH3: VISET
1V/div.
CH4: IOUT
500mA/div.
CH4: IOUT
500mA/div.
200μs/div.
200μs/div.
MPQ6610 Rev. 1.0
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11/20/2020
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MPQ6610 – 55V, 3A HALF-BRIDGE DRIVER, AEC-Q100 QUALIFIED
FUNCTIONAL BLOCK DIAGRAM
VIN
MPQ6610
VIN
UVLO
OVP
OTP
VREF
Int. VCC
LS Gate
Drive V
CP /
Bootstrap
Gate
Driver
nFAULT
BST
OUT
Control
Logic
IN
Open Load
Detect.
µC
EN
OCP
Current
Regulation
Comparator
Current Meas.
1.5V
GND
ISET
Analog Current Reporting (Voltage)
100µA/A of
Load Current
15kΩ for 1A Current Regulation
1.5V/A Output Voltage
Figure 1: Functional Block Diagram
MPQ6610 Rev. 1.0
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MPQ6610 – 55V, 3A HALF-BRIDGE DRIVER, AEC-Q100 QUALIFIED
OPERATION
The MPQ6610 is a half-bridge driver that
integrates two N-channel power MOSFETs with
a 3A current capability (depending on the
package, ambient temperature, and PCB
design). The device operates across a wide 4V
to 55V input voltage range. It is designed to
drive brushed DC motors, solenoids, or other
loads.
Current-Sense
The current flowing in the low-side MOSFET
(LS-FET) or high-side MOSFET (HS-FET) is
sensed with an internal current-sense circuit. A
voltage that is proportional to the output current
is sourced on the ISET pin.
The ISET pin voltage scaling is set by a resistor
connected between the ISET pin and ground.
For 1A of output current, 100µA of current is
sourced into the resistor connected to ISET. For
example, if a 10kΩ resistor is connected
between ISET and ground, the output voltage
on the ISET pin is 1V/A of output current.
The current is sensed anytime that either the
LS-FET or HS-FET is on.
Current Limit and Regulation
The current in the output is limited using
constant-off-time (COT) pulse-width modulation
(PWM) control circuitry. Figure 2 shows the
device’s current regulation system, described
below:
1. First, a MOSFET turns on and drives
current through the load.
3. If the load current reaches the current trip
threshold, the output changes its state (if it
was driving high, it goes low; if it was driving
low, it goes high).
4. If the load current has fallen at 80% of the
current limit threshold after a fixed off time
(tITRIP), the original MOSFET is re-enabled.
Then the cycle repeats.
5. If the current is still above this level, the off
time is extended until the current falls to
80% of the current limit threshold.
The current limit threshold is reached when the
ISET pin reaches 1.5V. For example, with a
10kΩ resistor connected from ISET to ground,
the ISET pin voltage is 1V/A of output current.
Therefore, when the current reaches 1.5A, the
ISET pin voltage reaches 1.5V, and a current
trip occurs.
Blanking Time
There is often a current spike while the
MOSFET turns on, which can be caused by the
body diode’s reverse recovery current or by the
shunt capacitance of the load. This current
spike requires filtering to prevent it from
erroneously shutting down the enabled
MOSFET. An internal fixed blanking time (tBLANK)
blanks the output of the current-sense
comparator when the output is switched. This
blanking time also sets the minimum time for
which the output remains high or low after the
input has changed.
2. The current increases in the load, which is
then sensed by the internal current-sense
circuit.
EN
OUT
ITRIP
ITRIP - 20%
IOUT
tITRIP
No ITRIP
tITRIP
tITRIP
Decay < 80% of ITRIP
tITRIP
tITRIP
tITRIP
Decay > 80% of ITRIP
Figure 2: Current Regulation
MPQ6610 Rev. 1.0
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MPQ6610 – 55V, 3A HALF-BRIDGE DRIVER, AEC-Q100 QUALIFIED
Charge Pump and Bootstrap
To generate the high-side gate drive voltage for
the internal N-channel high-side MOSFET (HSFET), a bootstrap capacitor is used in
conjunction with an internal trickle charge
pump. The bootstrap capacitor provides the
high peak current required to switch the
MOSFET quickly, and the internal trickle charge
pump keeps the bootstrap capacitor charged
during long periods when the output is not
switching.
Input Logic
Each MOSFET in the MPQ6610 is controlled
independently using the IN and EN pins (see
Table 1).
Table 1: Input Logic Table
EN
0
0
1
1
IN
0
1
0
1
OUT
Hi-Z
Hi-Z
Low
High
The input pins are designed such that they can
be driven with a logic level voltage even when
the main power to the device is inactive.
Protection and Diagnostic Functions
The MPQ6610 provides an nFAULT pin, which
is driven active low if any of the protection
circuits are activated. These fault conditions
include over-current (OC) and over-temperature
protection (OTP), as well as open-load
detection. nFAULT is not driven low if a current
limit trip occurs. nFAULT is an open-drain
output, and requires an external pull-up resistor.
When the fault condition is removed, the
nFAULT pin is pulled inactive high by the pullup resistor.
Over-Current Protection (OCP)
If the current through any MOSFET exceeds
the over-current (OC) threshold for longer than
the over-current deglitch time, an over-current
fault is triggered.
OC conditions are sensed on both the high-side
(HS) and low-side (LS) devices. OC conditions
include a short to ground, to supply, or across
the motor winding, which results in an overcurrent shutdown). Note that OCP does not use
the same current-sense circuitry that is used for
PWM current control, so it is independent of the
ISET resistor value.
Open-Load Detection
When the output is in a high-impedance state
(EN = 0), the internal circuits pull the OUT pin to
VIN / 2 by a weak current. If a load is connected
between OUT and ground, then the load pulls
the OUT pin close to ground. If a load is
connected to VIN, then OUT is pulled close to
the value on VIN.
If the voltage on OUT (VOUT) is almost VIN / 2,
an open-load condition is detected, and the
nFAULT pin is driven active low. The fault is
cleared when EN is made active.
Input
Under-Voltage
Lockout
(UVLO)
Protection
If the voltage on VIN (VIN) falls below the undervoltage lockout (UVLO) threshold at any time,
all circuitry in the device is disabled and the
internal logic is reset. Once VIN exceeds the
UVLO threshold, the MPQ6610 resumes
normal operation.
Over-Voltage Protection (OVP)
If VIN exceeds the over-voltage protection (OVP)
threshold, the device is disabled. Once VIN falls
below the OVP threshold, the MPQ6610
resumes normal operation.
Thermal Shutdown
If the die temperature exceeds its safe limits, all
MOSFETs in the H-bridge are disabled, and the
nFAULT pin goes low. Once the die
temperature drops to a safe level, the device
automatically resumes normal operation.
If an OC fault occurs, the state of the output is
reversed until the current approaches 0A. Then
both MOSFETs are disabled, and the nFAULT
pin is driven low. The driver remains disabled
for about 1.6ms, then is automatically reenabled.
MPQ6610 Rev. 1.0
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MPQ6610 – 55V, 3A HALF-BRIDGE DRIVER, AEC-Q100 QUALIFIED
PACKAGE OUTLINE DRAWING FOR 8L TSOT23
MF-PO-D-0105 revision 3.0
PACKAGE INFORMATION
TSOT23-8
See note 7
EXAMPLE
TOP MARK
PIN 1 ID
IAAAA
RECOMMENDED LAND PATTERN
TOP VIEW
SEATING PLANE
SE E DETAIL ''A''
FRONT VIEW
SIDE VIEW
NOTE:
DETAIL ''A''
1) ALL DIMENSIONS ARE IN MILLIMETERS.
2) PACKAGE LENGTH DOES NOT INCLUDE MOLD
FLASH, PROTRUSION, OR GATE BURR.
3) PACKAGE WIDTH DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
4) LEAD COPLANARITY (BOTTOM OF LEADS
AFTER FORMING) SHALL BE 0.10 MILLIMETERS
MAX.
5) JEDEC REFERENCE IS MO-193, VARIATION BA.
6) DRAWING IS NOT TO SCALE.
7) PIN 1 IS LOWER LEFT PIN WHEN READING TOP
MARKING FROM LEFT TO RIGHT (SEE EXAMPLE
TOP MARKING).
MPQ6610 Rev. 1.0
www.MonolithicPower.com
11/20/2020
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.
© 2020 MPS. All Rights Reserved.
13
MPQ6610 – 55V, 3A HALF-BRIDGE DRIVER, AEC-Q100 QUALIFIED
PACKAGE OUTLINE DRAWING FOR 8-SOIC
PACKAGE INFORMATION
MF-PO-D-0001, revision 3.0
SOIC-8
0.189(4.80)
0.197(5.00)
8
0.050(1.27)
0.024(0.61)
5
0.063(1.60)
0.150(3.80)
0.157(4.00)
PIN 1 ID
1
0.228(5.80)
0.244(6.20)
0.213(5.40)
4
TOP VIEW
RECOMMENDED LAND PATTERN
0.053(1.35)
0.069(1.75)
SEATING PLANE
0.004(0.10)
0.010(0.25)
0.013(0.33)
0.020(0.51)
SEE DETAIL "A"
0.050(1.27)
BSC
SIDE VIEW
FRONT VIEW
0.010(0.25)
x 45o
0.020(0.50)
GAUGE PLANE
0.010(0.25) BSC
0o-8o
DETAIL "A"
NOTE:
1) CONTROL DIMENSION IS IN INCHES. DIMENSION IN
BRACKET IS IN MILLIMETERS.
2) PACKAGE LENGTH DOES NOT INCLUDE MOLD FLASH,
PROTRUSIONS OR GATE BURRS.
3) PACKAGE WIDTH DOES NOT INCLUDE INTERLEAD FLASH
OR PROTRUSIONS.
4) LEAD COPLANARITY (BOTTOM OF LEADS AFTER FORMING)
SHALL BE 0.004" INCHES MAX.
5) DRAWING CONFORMS TO JEDEC MS-012, VARIATION AA.
6) DRAWING IS NOT TO SCALE.
MPQ6610 Rev. 1.0
www.MonolithicPower.com
11/20/2020
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.
© 2020 MPS. All Rights Reserved.
14
MPQ6610 – 55V, 3A HALF-BRIDGE DRIVER, AEC-Q100 QUALIFIED
CARRIER INFORMATION
ABCD
Pin1
ABCD
1
ABCD
ABCD
1
1
1
Feed Direction
TSOT23-8
Pin1
1
1
1
1
ABCD
ABCD
ABCD
ABCD
Feed Direction
SOIC-8
Part Number
MPQ6610GJAEC1–Z
MPQ6610GSAEC1–Z
Package
Description
Quantity/
Reel
Quantity/
Tube
Quantity/
Tray
Reel
Diameter
Carrier
Tape
Width
Carrier
Tape
Pitch
TSOT23-8
3000
N/A
N/A
7in
8mm
4mm
SOIC-8
2500
100
N/A
13in
12mm
8mm
MPQ6610 Rev. 1.0
www.MonolithicPower.com
11/20/2020
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.
© 2020 MPS. All Rights Reserved.
15
MPQ6610 – 55V, 3A HALF-BRIDGE DRIVER, AEC-Q100 QUALIFIED
Revision History
Revision #
1.0
Revision
Date
11/20/2020
Description
Initial Release
Pages
Updated
-
Notice: The information in this document is subject to change without notice. Users should warrant and guarantee that thirdparty Intellectual Property rights are not infringed upon when integrating MPS products into any application. MPS will not
assume any legal responsibility for any said applications.
MPQ6610 Rev. 1.0
www.MonolithicPower.com
11/20/2020
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.
© 2020 MPS. All Rights Reserved.
16
Mouser Electronics
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