2N3906BU

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This literature is subject to all applicable copyright laws and is not for resale in any manner. 2N3906 / MMBT3906 / PZT3906 PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 SOT-223 B Mark:2A EBC C B Ordering Information Part Number Marking Package Packing Method Pack Quantity 2N3906BU 2N3906 TO-92 3L Bulk 10000 2N3906TA 2N3906 TO-92 3L Ammo 2000 2N3906TAR 2N3906 TO-92 3L Ammo 2000 2N3906TF 2N3906 TO-92 3L Tape and Reel 2000 2N3906TFR 2N3906 TO-92 3L Tape and Reel 2000 MMBT3906 2A SOT-23 3L Tape and Reel 3000 PZT3906 3906 SOT-223 4L Tape and Reel 2500 © 2010 Fairchild Semiconductor Corporation 2N3906 / MMBT3906 / PZT3906 Rev. 1.2.2 www.fairchildsemi.com 1 2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier April 2014 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Value Unit VCEO Collector-Emitter Voltage -40 V VCBO Collector-Base Voltage -40 V VEBO Emitter-Base Voltage -5.0 V -200 mA -55 to +150 °C IC TJ, TSTG Parameter Collector Current - Continuous Operating and Storage Junction Temperature Range Note: 1. These ratings are based on a maximum junction temperature of 150°C. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty cycle operations. Thermal Characteristics Values are at TA = 25°C unless otherwise noted. Symbol PD Maximum Parameter Total Device Dissipation Unit 2N3906(3) MMBT3906(2) PZT3906(3) 625 350 1,000 mW 2.8 8.0 mW/°C Derate Above 25°C 5.0 RθJC Thermal Resistance, Junction to Case 83.3 RθJA Thermal Resistance, Junction to Ambient 200 °C/W 357 125 °C/W Notes: 2. Device is mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch. 3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. © 2010 Fairchild Semiconductor Corporation 2N3906 / MMBT3906 / PZT3906 Rev. 1.2.2 www.fairchildsemi.com 2 2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier Absolute Maximum Ratings(1) Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage(4) V(BR)CBO V(BR)EBO IBL ICEX IC = -1.0 mA, IB = 0 -40 V Collector-Base Breakdown Voltage IC = -10 μA, IE = 0 -40 V Emitter-Base Breakdown Voltage IE = -10 μA, IC = 0 -5.0 V Base Cut-Off Current VCE = -30 V, VBE = 3.0 V -50 nA Collector Cut-Off Current VCE = -30 V, VBE = 3.0 V -50 nA ON CHARACTERISTICS hFE DC Current Gain(4) VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage IC = -0.1 mA, VCE = -1.0 V 60 IC = -1.0 mA, VCE = -1.0 V 80 IC = -10 mA, VCE = -1.0 V 100 IC = -50 mA, VCE = -1.0 V 60 IC = -100 mA, VCE = -1.0V 30 300 IC = -10 mA, IB = -1.0 mA -0.25 IC = -50 mA, IB = -5.0 mA -0.40 IC = -10 mA, IB = -1.0 mA -0.65 IC = -50 mA, IB = -5.0 mA -0.85 -0.95 V V SMALL SIGNAL CHARACTERISTICS Current Gain - Bandwidth Product IC = -10 mA, VCE = -20 V, f = 100 MHz Cobo Output Capacitance VCB = -5.0 V, IE = 0, f = 100 kHz 4.5 pF Cibo Input Capacitance VEB = -0.5 V, IC = 0, f = 100 kHz 10.0 pF NF Noise Figure IC = -100 μA, VCE = -5.0 V, RS = 1.0 kΩ, f = 10 Hz to 15.7 kHz 4.0 dB 35 ns 35 ns 225 ns 75 ns fT 250 MHz SWITCHING CHARACTERISTICS td Delay Time tr Rise Time ts Storage Time tf Fall Time VCC = -3.0 V, VBE = -0.5 V IC = -10 mA, IB1 = -1.0 mA VCC = -3.0 V, IC = -10 mA, IB1 = IB2 = -1.0 mA Note: 4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. © 2010 Fairchild Semiconductor Corporation 2N3906 / MMBT3906 / PZT3906 Rev. 1.2.2 www.fairchildsemi.com 3 2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier Electrical Characteristics V CESAT - COLLECTOR EMITTER VOLTAGE (V) h F E - TYPICAL PULSED CURRENT GAIN 250 V CE = 1 .0V 150 100 - 40 °C 50 0.1 0.2 0.5 1 2 5 10 20 I C - COLLECTOR CURRE NT (mA) 50 100 125°C β = 10 - 40 °C - 40 °C 1 10 100 I C - COLLECTOR CURRENT (mA) 25 °C 1 - 40 °C 0.6 125 °C 25 °C 125 °C 0.4 0.4 V CE = 1V 0.2 0.2 1 10 100 I C - COLLECTOR CURRE NT (mA) 200 CB CAPACITANCE (pF) 1 0.1 50 75 100 TA - AMBIE NT TEMP ERATURE (° C) 8 25 C obo 6 4 C ibo 2 0 0.1 125 1 REVERSE BIAS VOLTAGE (V) 10 Figure 6. Common-Base Open Circuit Input and Output Capacitance vs. Reverse Bias Voltage Figure 5. Collector Cut-Off Current vs. Ambient Temperature © 2010 Fairchild Semiconductor Corporation 2N3906 / MMBT3906 / PZT3906 Rev. 1.2.2 1 10 I C - COLLECTOR CURRENT (mA) 10 = 25V 10 0.01 25 0 0.1 Figure 4. Base-Emitter On Voltage vs. Collector Current 100 V 200 0.8 0.8 0.6 0 VBE( ON)- BASE EMITTER ON VOLTAGE (V) V BESAT - BASE EM ITTE R VOLTAGE (V) 0.1 Figure 2. Collector-Emitter Saturation Voltage vs. Collector Current Figure 3. Base-Emitter Saturation Voltage vs. Collector Current I CBO - COLLE CTOR CURRENT (nA) 25 °C 0.05 Figure 1. Typical Pulsed Current Gain vs. Collector Current 0 0.2 0.15 25 °C 1 β = 10 0.25 125 °C 200 0.3 www.fairchildsemi.com 4 2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier Typical Performance Characteristics 6 12 V CE = 5.0V f = 1.0 kHz 5 NF - NOISE FIGURE (dB) NF - NOISE FIGURE (dB) V CE = 5.0V 4 3 I C = 100 μA, R S = 200Ω 2 I C = 1.0 mA, R S = 200Ω 1 I C = 100 μA, R S = 2.0 kΩ 0 0.1 1 10 f - FREQUENCY (kHz) I C = 1.0 mA 8 6 4 I C = 100 μA 2 0 0.1 100 1 10 R S - SOURCE RESISTANCE ( kΩ ) 100 Figure 8. Noise Figure vs. Source Resistance Figure 7. Noise Figure vs. Frequency 500 500 ts tf 10 I B1 = I B2 = tr Ic t off 100 TIME (nS) 100 TIME (nS) 10 t on I B1 = Ic 10 t on VBE(OFF) = 0.5V 10 t off I = I = B1 B2 10 Ic 10 td 1 1 10 I C - COLLECTOR CURRENT (mA) 1 100 1 I 10 - COLLECTOR CURRENT (mA) 100 Figure 10. Turn-On and Turn-Off Times vs. Collector Current Figure 9. Switching Times vs. Collector Current PD - POWER DISSIPATION (W) 1 SOT-223 0.75 TO-92 0.5 SOT-23 0.25 0 0 25 50 75 100 TEMPERATURE (o C) 125 150 Figure 11. Power Dissipation vs. Ambient Temperature © 2010 Fairchild Semiconductor Corporation 2N3906 / MMBT3906 / PZT3906 Rev. 1.2.2 www.fairchildsemi.com 5 2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier Typical Performance Characteristics (Continued) ) 10 h ie - INPUT IMPEDANCE (k Ω) _ 4 h re - VOLTAGE FEEDBACK RATIO (x10 100 10 1 0.1 1 I C - COLLECTOR CURRENT (mA) 1 0.1 0.1 10 1000 V CE = 10 V f = 1.0 kHz 10 V CE = 10 V f = 1.0 kHz 500 h fe - CURRENT GAIN h oe - OUTPUT ADMITTANCE ( μmhos) 1 I C - COLLECTOR CURRENT (mA) Figure 13. Input Impedance Figure 12. Voltage Feedback Ratio 1000 VCE = 10 V f = 1.0 kHz 100 200 100 50 20 10 0.1 1 I C - COLLECTOR CURRENT (mA) 10 0.1 10 10 Figure 15. Current Gain Figure 14. Output Admittance © 2010 Fairchild Semiconductor Corporation 2N3906 / MMBT3906 / PZT3906 Rev. 1.2.2 1 I C - COLLECTOR CURRENT (mA) www.fairchildsemi.com 6 2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier Typical Performance Characteristics (Continued) 2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier Physical Dimensions TO-92 (Bulk) D Figure 16. 3-LEAD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURATION (OLD TO92AM3) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/ZA/ZA03D.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-ZA03D_BK.pdf. © 2010 Fairchild Semiconductor Corporation 2N3906 / MMBT3906 / PZT3906 Rev. 1.2.2 www.fairchildsemi.com 7 2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier Physical Dimensions (Continued) TO-92 (Ammo, Tape and Reel) Figure 17. 3-LEAD, TO92, MOLDED 0.200 IN LINE SPACING LEAD FORM (J61Z OPTION) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/ZA/ZA03F.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-ZA03F_BK.pdf. © 2010 Fairchild Semiconductor Corporation 2N3906 / MMBT3906 / PZT3906 Rev. 1.2.2 www.fairchildsemi.com 8 2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier Physical Dimensions (Continued) SOT-23 0.95 2.92±0.20 3 1.40 1.30+0.20 -0.15 1 (0.29) 2 0.95 1.90 2.20 0.60 0.37 0.20 A B 1.90 1.00 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.40±0.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. E) DRAWING FILE NAME: MA03DREV10 0.25 0.20 MIN (0.55) SEATING PLANE SCALE: 2X Figure 18. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/MA/MA03D.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-MA03D.pdf. © 2010 Fairchild Semiconductor Corporation 2N3906 / MMBT3906 / PZT3906 Rev. 1.2.2 www.fairchildsemi.com 9 2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier Physical Dimensions (Continued) SOT-223 4L Figure 19. MOLDED PACKAGE, SOT-223, 4-LEAD Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/MA/MA04A.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-MA04A_BK.pdf. © 2010 Fairchild Semiconductor Corporation 2N3906 / MMBT3906 / PZT3906 Rev. 1.2.2 www.fairchildsemi.com 10 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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