2N3906TAR

Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 Mark:2A EBC C SOT-223 B B Ordering Information Part Number Marking Package Packing Method Pack Quantity 2N3906BU 2N3906 TO-92 3L Bulk 10000 2N3906TA 2N3906 TO-92 3L Ammo 2000 2N3906TAR 2N3906 TO-92 3L Ammo 2000 2N3906TF 2N3906 TO-92 3L Tape and Reel 2000 2N3906TFR 2N3906 TO-92 3L Tape and Reel 2000 MMBT3906 2A SOT-23 3L Tape and Reel 3000 PZT3906 3906 SOT-223 4L Tape and Reel 2500 © 2010 Semiconductor Components Industries, LLC. October-2017, Rev. 2 Publication Order Number: PZT3906/D 2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier 2N3906 / MMBT3906 / PZT3906 PNP General-Purpose Amplifier Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Value Unit VCEO Collector-Emitter Voltage -40 V VCBO Collector-Base Voltage -40 V VEBO Emitter-Base Voltage -5.0 V -200 mA -55 to +150 °C IC TJ, TSTG Parameter Collector Current - Continuous Operating and Storage Junction Temperature Range Note: 1. These ratings are based on a maximum junction temperature of 150°C. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low-duty cycle operations. Thermal Characteristics Values are at TA = 25°C unless otherwise noted. Symbol PD Maximum Parameter Unit 2N3906(3) MMBT3906(2) PZT3906(3) 625 350 1,000 mW 2.8 8.0 mW/°C Total Device Dissipation Derate Above 25°C 5.0 RθJC Thermal Resistance, Junction to Case 83.3 RθJA Thermal Resistance, Junction to Ambient 200 °C/W 357 125 °C/W Notes: 2. Device is mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch. 3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. www.onsemi.com 2 2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier Absolute Maximum Ratings(1) Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage(4) V(BR)CBO V(BR)EBO IBL ICEX IC = -1.0 mA, IB = 0 -40 V Collector-Base Breakdown Voltage IC = -10 μA, IE = 0 -40 V Emitter-Base Breakdown Voltage IE = -10 μA, IC = 0 -5.0 V Base Cut-Off Current VCE = -30 V, VBE = 3.0 V -50 nA Collector Cut-Off Current VCE = -30 V, VBE = 3.0 V -50 nA ON CHARACTERISTICS hFE DC Current Gain(4) VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage IC = -0.1 mA, VCE = -1.0 V 60 IC = -1.0 mA, VCE = -1.0 V 80 IC = -10 mA, VCE = -1.0 V 100 IC = -50 mA, VCE = -1.0 V 60 IC = -100 mA, VCE = -1.0V 30 300 IC = -10 mA, IB = -1.0 mA -0.25 IC = -50 mA, IB = -5.0 mA -0.40 IC = -10 mA, IB = -1.0 mA -0.65 IC = -50 mA, IB = -5.0 mA -0.85 -0.95 V V SMALL SIGNAL CHARACTERISTICS Current Gain - Bandwidth Product IC = -10 mA, VCE = -20 V, f = 100 MHz Cobo Output Capacitance VCB = -5.0 V, IE = 0, f = 100 kHz 4.5 pF Cibo Input Capacitance VEB = -0.5 V, IC = 0, f = 100 kHz 10.0 pF NF Noise Figure IC = -100 μA, VCE = -5.0 V, RS = 1.0 kΩ, f = 10 Hz to 15.7 kHz 4.0 dB 35 ns 35 ns fT 250 MHz SWITCHING CHARACTERISTICS td Delay Time tr Rise Time ts Storage Time tf Fall Time VCC = -3.0 V, VBE = -0.5 V IC = -10 mA, IB1 = -1.0 mA VCC = -3.0 V, IC = -10 mA, IB1 = IB2 = -1.0 mA Note: 4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. www.onsemi.com 3 225 ns 75 ns 2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier Electrical Characteristics 150 100 - 40 °C 50 0.1 0.2 0.5 1 2 5 10 20 I C - COLLECTOR CURRE NT (mA) 50 100 V BESAT - BASE EM ITTE R VOLTAGE (V) β = 10 - 40 °C 0.1 125°C 0 - 40 °C 1 10 100 I C - COLLECTOR CURRENT (mA) 25 °C 1 - 40 °C 0.6 125 °C 25 °C 125 °C 0.4 0.4 V CE = 1V 0.2 0.2 1 10 100 I C - COLLECTOR CURRE NT (mA) 200 CB CAPACITANCE (pF) 1 0.1 50 75 100 TA - AMBIE NT TEMP ERATURE (° C) Figure 5. Collector Cut-Off Current vs. Ambient Temperature 1 10 I C - COLLECTOR CURRENT (mA) 25 10 = 25V 10 0.01 25 0 0.1 Figure 4. Base-Emitter On Voltage vs. Collector Current 100 V 200 0.8 0.8 0.6 25 °C Figure 2. Collector-Emitter Saturation Voltage vs. Collector Current Figure 3. Base-Emitter Saturation Voltage vs. Collector Current I CBO - COLLE CTOR CURRENT (nA) 0.2 0.05 Figure 1. Typical Pulsed Current Gain vs. Collector Current 0 β = 10 0.15 25 °C 1 0.3 0.25 125 °C 200 V CESAT - COLLECTOR EMITTER VOLTAGE (V) V CE = 1 .0V VBE( ON)- BASE EMITTER ON VOLTAGE (V) h F E - TYPICAL PULSED CURRENT GAIN 250 8 6 4 C ibo 2 0 0.1 125 C obo 1 REVERSE BIAS VOLTAGE (V) 10 Figure 6. Common-Base Open Circuit Input and Output Capacitance vs. Reverse Bias Voltage www.onsemi.com 4 2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier Typical Performance Characteristics 12 6 V CE = 5.0V f = 1.0 kHz 5 NF - NOISE FIGURE (dB) NF - NOISE FIGURE (dB) V CE = 5.0V 4 3 I C = 100 μA, R S = 200Ω 2 I C = 1.0 mA, R S = 200Ω 1 I C = 100 μA, R S = 2.0 kΩ 0 0.1 1 10 f - FREQUENCY (kHz) I C = 1.0 mA 8 6 4 I C = 100 μA 2 0 0.1 100 1 10 R S - SOURCE RESISTANCE ( kΩ ) 100 Figure 8. Noise Figure vs. Source Resistance Figure 7. Noise Figure vs. Frequency 500 500 ts tf 10 I B1 = I B2 = tr Ic t off 100 TIME (nS) 100 TIME (nS) 10 t on I B1 = Ic 10 t on VBE(OFF) = 0.5V 10 t off I = I = B1 B2 10 Ic 10 td 1 1 10 I C - COLLECTOR CURRENT (mA) 100 PD - POWER DISSIPATION (W) 1 SOT-223 TO-92 0.5 SOT-23 0.25 0 0 25 50 75 100 TEMPERATURE (o C) 125 1 I Figure 9. Switching Times vs. Collector Current 0.75 1 150 Figure 11. Power Dissipation vs. Ambient Temperature www.onsemi.com 5 10 - COLLECTOR CURRENT (mA) 100 Figure 10. Turn-On and Turn-Off Times vs. Collector Current 2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier Typical Performance Characteristics (Continued) ) 10 h ie - INPUT IMPEDANCE (k Ω) _ 4 h re - VOLTAGE FEEDBACK RATIO (x10 100 10 1 0.1 1 I C - COLLECTOR CURRENT (mA) 1 0.1 0.1 10 1000 V CE = 10 V f = 1.0 kHz 10 V CE = 10 V f = 1.0 kHz 500 h fe - CURRENT GAIN h oe - OUTPUT ADMITTANCE ( μmhos) 1 I C - COLLECTOR CURRENT (mA) Figure 13. Input Impedance Figure 12. Voltage Feedback Ratio 1000 VCE = 10 V f = 1.0 kHz 100 200 100 50 20 10 0.1 1 I C - COLLECTOR CURRENT (mA) 10 10 0.1 1 I C - COLLECTOR CURRENT (mA) Figure 15. Current Gain Figure 14. Output Admittance www.onsemi.com 6 10 2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier Typical Performance Characteristics (Continued) 2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier Physical Dimensions TO-92 (Bulk) D Figure 16. 3-LEAD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURATION (OLD TO92AM3) Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products. www.onsemi.com 7 TO-92 (Ammo, Tape and Reel) Figure 17. 3-LEAD, TO92, MOLDED 0.200 IN LINE SPACING LEAD FORM (J61Z OPTION) Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products. www.onsemi.com 8 2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier Physical Dimensions (Continued) SOT-23 0.95 2.92±0.20 3 1.40 1.30+0.20 -0.15 1 (0.29) 2 0.95 1.90 2.20 0.60 0.37 0.20 A B 1.90 1.00 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.40±0.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 0.25 0.20 MIN (0.55) SEATING PLANE A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. E) DRAWING FILE NAME: MA03DREV10 SCALE: 2X Figure 18. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor's worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products. www.onsemi.com 9 2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier Physical Dimensions (Continued) SOT-223 4L Figure 19. MOLDED PACKAGE, SOT-223, 4-LEAD Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor's worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products. www.onsemi.com 10 2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier Physical Dimensions (Continued) ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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