2N6517BU

NPN Epitaxial Silicon Transistor 2N6517 Features • • • • High Voltage Transistor Collector Dissipation: PC(max) = 625 mW Complement to 2N6520 Suffix “−C” means Center Collector (1. Emitter 2. Collector 3. Base) www.onsemi.com ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25°C unless otherwise noted.) Parameter Symbol VCBO Collector−Base Voltage 2N6517 2N6517C VCEO Collector−Emitter Voltage 2N6517 2N6517C VEBO Emitter−Base Voltage Value Unit V 350 400 V 350 400 6 V IC Collector Current 500 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 °C TSTG Storage Temperature −55 ~ 150 °C 12 1 3 TO−92 3 4.825x4.76 CASE 135AN 2 3 TO−92 3 4.83x4.76 LEADFORMED CASE 135AR MARKING DIAGRAM A/2N 6517 YWW Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1 A 2N6517/2N6517C YWW 2 3 1: Emitter 2: Base 3: Collector = Assembly Code = Device Code = Date Code ORDERING INFORMATION © Semiconductor Components Industries, LLC, 2010 July, 2021 − Rev. 3 1 Device Package Shipping 2N6517BU TO−92 3 (Pb−Free) 10000 / Bulk Bag 2N6517TA TO−92 3 (Pb−Free) 2000 / Fan−Fold 2N6517CTA TO−92 3 (Pb−Free) 2000 / Fan−Fold Publication Order Number: 2N6517/D 2N6517 ELECTRICAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted.) Symbol Parameter Conditions Min. Max. Unit BVCBO Collector−Base Breakdown Voltage 2N6517 2N6517C IC = 100 mA, IE = 0 IC = 100 mA, IE = 0 350 400 − − V BVCEO Collector−Emitter Breakdown Voltage* 2N6517 2N6517C IC = 1 mA, IB = 0 IC = 1 mA, IB = 0 350 400 − − BVEBO Emitter−Base Breakdown Voltage IE = 10 mA, IC = 0 6 − V ICBO Collector Cut−Off Current VCB = 250 V, IE = 0 − 50 nA IEBO Emitter Cut−Off Current VEB = 5 V, IC = 0 − 50 nA hFE DC Current Gain* 2N6517/2N6517C 2N6517/2N6517C 2N6517/2N6517C 2N6517/2N6517C 2N6517/2N6517C 2N6517C VCE = 10 V, IC = 1 mA VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 30 mA VCE = 10 V, IC = 50 mA VCE = 10 V, IC = 100 mA VCE = 10 V, IC = 5 mA 20 30 30 20 15 50 − − 200 200 − 200 V VCE(sat) Collector−Emitter Saturation Voltage IC = 10 mA, IB = 1 mA IC = 20 mA, IB = 2 mA IC = 30 mA, IB = 3 mA IC = 50 mA, IB = 5 mA − − − − 0.3 0.35 0.5 1 V VBE(sat) Base−Emitter Saturation Voltage IC = 10 mA, IB = 1 mA IC = 20 mA, IB = 2 mA IC = 30 mA, IB = 3 mA − − − 0.75 0.85 0.9 V Output Capacitance VCB = 20 V, IE = 0, f = 1 MHz − 6 pF Current Gain Bandwidth Product* IC = 10 mA, VCE = 20 V, f = 20 MHz 40 200 MHz Base−Emitter On Voltage IC = 100 mA, VCE = 10 V, − 2 V Cob fT VBE(on) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2% www.onsemi.com 2 2N6517 TYPICAL PERFORMANCE CHARACTERISTICS 1000 VCE = 10 V 100 VCE(sat), Saturation Voltage (V) hFE, DC Current Gain 1000 TA = 25°C TA = 75°C 10 TA = 125°C 1 100 TA = 125°C 10 TA = 75°C 1 TA = 25°C 0.1 0.1 1 10 100 1000 1 1000 Figure 1. DC Current Gain Figure 2. Saturation Voltage TA = 25°C TA = 75°C TA = 125°C 100 TA = 125°C 10 1 TA = 75°C 0.1 0.01 TA = 25°C 0.001 0.1 1 10 100 1 1000 VBE(on), Base−Emitter On Voltage (V) 10000 TA = 125°C 100 10 TA = 75°C 1 TA = 25°C 0.1 50 100 150 200 250 3 4 5 6 Figure 4. Emitter Cut Off Current Figure 3. Saturation Voltage 1000 2 VEB, Emitter−Base Voltage (V) IC, Collector Current (mA) ICBO, Collector Cut Off Current (nA) 100 IC, Collector Current (mA) IC = 10 IB 1 10 IC, Collector Current (mA) IEBO, Emitter Cut Off Current (nA) VBE(sat), Saturation Voltage (V) IC = 10 IB 300 350 1.6 VCE = 10 V TA = 25°C 1.4 1.2 1.0 0.8 0.6 0.4 1 10 100 VCB, Collector−Base Voltage (V) IC, Collector Current (mA) Figure 5. Collector Cut Off Current Figure 6. Base−Emitter On Voltage www.onsemi.com 3 1000 2N6517 2.0 f = 1 MHz 1.8 1.6 1.4 1.2 1.0 0 20 40 60 80 40 35 30 25 20 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VCB, Collector−Base Voltage (V) VEB, Emitter−Base Voltage (V) Figure 7. Output Capacitance Figure 8. Input Capacitance 4.5 5.0 1000 tD, tR, tON Switching Time (ns) fT, Current Gain Bandwidth (MHz) f = 1 MHz 45 100 100 10 1 tON tr 100 td VCC = 100 V IC = 5IB1 = −5IB2, TA = 25°C 10 1 10 100 10 100 IC, Collector Current (mA) IC, Collector Current (mA) Figure 9. Current Gain Bandwidth Product Figure 10. Resistive Load Switching 10000 tstg, tf, tOFF Switching Time (ns) 50 CEB, Emitter−Base Capacitance (pF) CCB, Collector−Base Capacitance (pF) TYPICAL PERFORMANCE CHARACTERISTICS (Continued) tOFF tstg 1000 tf 100 VCC = 100 V IC = 5IB1 = −5IB2, TA = 25°C 10 10 100 IC, Collector Current (mA) Figure 11. Resistive Load Switching www.onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−92 3 4.825x4.76 CASE 135AN ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13880G TO−92 3 4.825X4.76 DATE 31 JUL 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−92 3 4.83x4.76 LEADFORMED CASE 135AR ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13879G DATE 30 SEP 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. TO−92 3 4.83X4.76 LEADFORMED PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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