2N7002KT7G

DATA SHEET www.onsemi.com Small Signal MOSFET RDS(on) MAX V(BR)DSS 60 V, 380 mA, Single, N−Channel, SOT−23 ID MAX 1.6 W @ 10 V 60 V 380 mA 2.5 W @ 4.5 V 2N7002K, 2V7002K SIMPLIFIED SCHEMATIC Features • • • • • Gate ESD Protected Low RDS(on) Surface Mount Package 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 3 (Top View) 3 Low Side Load Switch Level Shift Circuits DC−DC Converter Portable Applications i.e. DSC, PDA, Cell Phone, etc. Symbol 2 Value Unit VDSS 60 V Gate−to−Source Voltage VGS ±20 V Drain Current (Note 2) Steady State Minimum Pad TA = 25°C TA = 85°C TA = 25°C TA = 85°C ID ID mA 380 270 mA 320 230 Power Dissipation Steady State 1 sq in Pad Steady State Minimum Pad PD Pulsed Drain Current (tp = 10 ms) IDM 5.0 A Operating Junction and Storage Temperature Range TJ, TSTG −55 to +150 °C mW 420 300 SOT−23 CASE 318 STYLE 21 IS 300 mA Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C ESD 2000 V 704 MG G 1 2 Gate Source 704 = Specific Device Code* M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Specific Device Code, Date Code or overbar orientation and/or location may vary depending upon manufacturing location. This is a representation only and actual devices may not match this drawing exactly. ORDERING INFORMATION Package Shipping† 2N7002KT1G, 2V7002KT1G SOT−23 (Pb−Free) 3000 / Tape & Reel 2N7002KT7G SOT−23 (Pb−Free) 3500 / Tape & Reel Device Source Current (Body Diode) Gate−Source ESD Rating (HBM, Method 3015) 3 1 Drain−to−Source Voltage Drain Current (Note 1) Steady State 1 sq in Pad MARKING DIAGRAM & PIN ASSIGNMENT Drain MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Rating Drain 2 Source Applications • • • • 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 sq in pad size with 1 oz Cu. 2. Surface−mounted on FR4 board using 0.08 sq in pad size with 1 oz Cu. © Semiconductor Components Industries, LLC, 2007 August, 2021 − Rev. 18 1 Publication Order Number: 2N7002K/D 2N7002K, 2V7002K THERMAL CHARACTERISTICS Characteristic Junction−to−Ambient − Steady State (Note 3) Symbol Max Unit RqJA 300 °C/W Junction−to−Ambient − t ≤ 5 s (Note 3) 92 Junction−to−Ambient − Steady State (Note 4) 417 Junction−to−Ambient − t ≤ 5 s (Note 4) 154 3. Surface−mounted on FR4 board using 1 sq in pad size with 1 oz Cu. 4. Surface−mounted on FR4 board using 0.08 sq in pad size with 1 oz Cu. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 60 V VGS = 0 V, VDS = 50 V Gate−to−Source Leakage Current IGSS V 71 TJ = 25°C mV/°C 1 TJ = 125°C 10 TJ = 25°C 100 mA nA VDS = 0 V, VGS = ±20 V ±10 mA VDS = 0 V, VGS = ±10 V 450 nA VDS = 0 V, VGS = ±5.0 V 150 nA 2.3 V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(TH) Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) Forward Transconductance gFS VGS = VDS, ID = 250 mA 1.0 4.0 mV/°C VGS = 10 V, ID = 500 mA 1.19 1.6 VGS = 4.5 V, ID = 200 mA 1.33 2.5 VDS = 5 V, ID = 200 mA 530 W mS CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VGS = 0 V, f = 1 MHz, VDS = 20 V 24.5 45 4.2 8.0 2.2 5.0 Total Gate Charge QG(TOT) 0.7 Threshold Gate Charge QG(TH) 0.1 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD VGS = 4.5 V, VDS = 10 V; ID = 200 mA pF nC 0.3 0.1 SWITCHING CHARACTERISTICS, VGS = V (Note 6) Turn−On Delay Time td(ON) Rise Time Turn−Off Delay Time tr td(OFF) Fall Time ns 12.2 VGS = 10 V, VDD = 25 V, ID = 500 mA, RG = 25 W tf 9.0 55.8 29 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 200 mA TJ = 25°C 0.8 TJ = 85°C 0.7 1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2% 6. Switching characteristics are independent of operating junction temperatures www.onsemi.com 2 2N7002K, 2V7002K TYPICAL CHARACTERISTICS 9.0 V 8.0 V 7.0 V 6.0 V 1.2 1.2 5.0 V 4.5 V VGS = 10 V 4.0 V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 1.6 3.5 V 0.8 3.0 V 0.4 0.8 TJ = 25°C 0.4 2.5 V 0 2 4 0 6 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) TJ = 125°C TJ = 85°C TJ = 25°C 2.0 1.6 TJ = −55°C 1.2 0.8 0.4 0.2 0.4 0.6 0.8 1.0 1.2 6 3.2 VGS = 10 V 2.8 2.4 TJ = 125°C 2.0 TJ = 85°C 1.6 TJ = 25°C 1.2 TJ = −55°C 0.8 0.4 0 0 0.2 0.4 0.6 0.8 1.0 1.2 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Drain Current and Temperature Figure 4. On−Resistance vs. Drain Current and Temperature 2.4 2.2 2.0 ID = 500 mA 1.6 ID = 200 mA 1.2 0.8 0.4 4 Figure 2. Transfer Characteristics VGS = 4.5 V 0 2 Figure 1. On−Region Characteristics 2.4 0 0 TJ = −55°C VGS, GATE−TO−SOURCE VOLTAGE (V) 3.2 2.8 TJ = 125°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 2 4 6 8 ID = 0.2 A 1.8 VGS = 10 V 1.4 1.0 0.6 −50 10 VGS = 4.5 V −25 0 25 50 75 100 125 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 5. On−Resistance vs. Gate−to−Source Voltage Figure 6. On−Resistance Variation with Temperature www.onsemi.com 3 150 2N7002K, 2V7002K TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) 30 C, CAPACITANCE (pF) Ciss 20 TJ = 25°C VGS = 0 V Coss 10 0 Crss 0 4 8 12 16 20 TJ = 25°C ID = 0.2 A 4 3 2 1 0 0 0.2 0.4 0.6 0.8 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge VGS(TH), THRESHOLD VOLTAGE (V) 10 VGS = 0 V IS, SOURCE CURRENT (A) 5 1 TJ = 85°C TJ = 25°C 0.1 0.01 0.4 0.6 0.8 1.0 1.2 2.5 2.4 ID = 250 mA 2.3 2.2 2.1 2.0 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 −50 −25 0 25 50 75 100 125 VSD, SOURCE−TO−DRAIN VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 9. Diode Forward Voltage vs. Current Figure 10. Threshold Voltage with Temperature www.onsemi.com 4 150 2N7002K, 2V7002K TYPICAL CHARACTERISTICS RqJA(t) (°C/W) EFFECTIVE TRANSIENT THERMAL RESISTANCE 1000 Duty Cycle = 0.5 100 10 0.2 0.1 0.05 0.02 0.01 1 SINGLE PULSE 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10 100 1000 t, PULSE TIME (s) Figure 11. Thermal Response − 1 sq in pad RqJA(t) (°C/W) EFFECTIVE TRANSIENT THERMAL RESISTANCE 1000 Duty Cycle = 0.5 100 10 0.2 0.1 0.05 0.02 0.01 1 SINGLE PULSE 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 t, PULSE TIME (s) Figure 12. Thermal Response − minimum pad www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE−ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. 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