DATA SHEET
www.onsemi.com
Bipolar Transistor
1
(-)100 V, (-)2 A, Low VCE(sat),
(PNP)NPN Single PCP
2
3
SOT−89−3
CASE 419AU
2SA1417, 2SC3647
ELECTRICAL CONNECTION
Features
• Adoption of FBET, MBIT Processes
• High Breakdown Voltage and Large Current Capacity
• Ultrasmall Size Making it Easy to Provide High−density Small−sized
2
2
1
1 : Base
2 : Collector
3 : Emitter
1
Hybrid ICs
• These Devices are Pb−Free and Halide Free
SPECIFICATIONS ( ): 2SA1417
3
3
2SA1417
2SC3647
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Unit
VCBO
Collector−to−Base
Voltage
(−)120
V
VCEO
Collector−to−Emitter
Voltage
(−)100
V
VEBO
Emitter−to−
Base Voltage
(−)6
V
IC
Collector
Current
(−)2
A
ICP
Collector
Current (Pulse)
(−)3
A
PC
Collector
Dissipation
500
mW
1.5
W
RANK
RANK
2SA1417
2SC3647
ORDERING INFORMATION
When mounted on
ceramic substrate
(250 mm2 x 0.8 mm)
Tj
Junction
Temperature
150
°C
Tstg
Storage
Temperature
− 55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2013
June, 2022 − Rev 3
LOT No.
MARKING DIAGRAM
Ratings
CC
Conditions
LOT No.
Parameter
AC
Symbol
1
Package
Shipping†
2SA1417S−TD−E
PCP
(Pb−Free)
1000 /
Tape & Reel
2SA1417T−TD−E
PCP
(Pb−Free)
1000 /
Tape & Reel
2SC3647S−TD−E
PCP
(Pb−Free)
1000 /
Tape & Reel
2SC3647T−TD−E
PCP
(Pb−Free)
1000 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
2SA1417/D
2SA1417, 2SC3647
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Ratings
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
−
−
(−)100
nA
ICBO
Collector Cutoff Current
VCB = (−)100 V, IE = 0 A
IEBO
Emitter Cutoff Current
VEB = (−)4 V IC = 0 A
−
−
(−)100
nA
hFE
DC Current Gain
VCE = (−)5 V, IC = (−)100 mA
100*
−
400*
−
Gain−Bandwidth Product
VCE = (−)10 V, IC = (−)100 mA
−
120
−
MHz
Output Capacitance
VCB = (−)10 V, f = 1 MHz
−
(25)16
−
pF
VCE(sat)
Collector−to−Emitter Saturation Voltage
IC = (−)1 A, IB= (−)100 mA
−
(−0.22)
0.13
(−0.6)
0.4
V
VBE(sat)
Base−to−Emitter Saturation Voltage
IC = (−)1 A, IB= (−)100 mA
−
(−)0.85
(−)1.2
V
V(BR)CBO
Collector−to−Base Breakdown Voltage
IC = (−)10 mA, IE = 0 A
(−)120
−
−
V
V(BR)CEO
Collector−to−Emitter Breakdown Voltage
IC = (−)1 mA, RBE = ∞
(−)100
−
−
V
V(BR)EBO
Emitter−to−Base Breakdown Voltage
IE = (−)10 mA, IC = 0 A
(−)6
−
−
V
ton
Turn−On Time
See specified Test Circuit.
−
(80)80
−
ns
tstg
Storage Time
−
(750)1000
−
ns
Fall Time
−
(40)50
−
ns
fT
Cob
tf
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*The 2SA1417/2SC3647 are Classified by 100 mA hFE as Follows:
Rank
R
S
T
hFE
100 to 200
140 to 280
200 to 400
SWITCHING TIME TEST CIRCUIT
IB1
PW = 20 ms
D.C. = ≤ 1%
INPUT
OUTPUT
IB2
VR
RB
RL
50 W
100 mF
VBE = − 5 V
470 mF
VCC = 50 V
IC = 10 IB1 = −10 IB2 = 0.7 A
For PNP, the polarity is reversed.
Figure 1. Switching Time Test Circuit
www.onsemi.com
2
2SA1417, 2SC3647
TYPICAL CHARACTERISTICS
−2.0
2.0
−40 mA
2SA1417
30 mA
−20 mA
IC, Collector Current (A)
IC, Collector Current (A)
−1.6
−10 mA
−1.2
−5 mA
−0.8
−3 mA
−2 mA
0.4
1 mA
IB = 0 mA
0
0
−1
−2
−3
−4
1.6
10 mA
1.2
5 mA
0.8
3 mA
2 mA
0.4
0
−5
20 mA
1 mA
IB = 0 mA
0
1
VCE, Collector−to−Emitter Voltage (V)
2
−4 mA
−3 mA
−0.6
−2 mA
−0.4
−1 mA
−0.2
0
IB = 0 mA
0
−10
−20
−30
3.5 mA
0.8
3.0 mA
2.5 mA
0.6
2.0 mA
0.4
1.5 mA
1.0 mA
0.2
0
−50
−40
0.5 mA
IB = 0 mA
0
10
VCE, Collector−to−Emitter Voltage (V)
40
2.4
IC, Collector Current (A)
IC, Collector Current (A)
TA = 75°C
−1.2
25°C
−0.8
−25°C
−0.4
0
−0.2
−0.4
−0.6
−0.8
50
2SC3647
VCE = 5 V
2.0
−1.6
0
30
Figure 5. IC − VCE
2SA1417
VCE = −5 V
−2.0
20
VCE, Collector−to−Emitter Voltage (V)
Figure 4. IC − VCE
−2.4
2SC3647
4.0 mA
IC, Collector Current (A)
IC, Collector Current (A)
−0.8
5
4.5 mA
1.0
2SA1417
−5 mA
4
Figure 3. IC − VCE
5.0 mA
−6 mA
3
VCE, Collector−to−Emitter Voltage (V)
Figure 2. IC − VCE
−1.0
40 mA
50 mA
2SC3647
−30 mA
−1.0
1.6
TA = 75°C
1.2
0.8
−25°C
0.4
0
−1.2
25°C
0
VBE, Base−to−Emitter Voltage (V)
0.2
0.4
0.6
0.8
1.0
VBE, Base−to−Emitter Voltage (V)
Figure 6. IC − VBE
Figure 7. IC − VBE
www.onsemi.com
3
1.2
2SA1417, 2SC3647
TYPICAL CHARACTERISTICS (continued)
1000
1000
2SA1417
VCE = − 5 V
7
5
5
TA = 75°C
3
hFE, DC Current Gain
hFE, DC Current Gain
2SC3647
VCE = 5 V
7
25°C
2
−25°C
100
7
5
3
TA = 75°C
2
25°C
−25°C
100
7
5
3
−7 −0.01
−2 −3 −5 −7 −0.1
−2 −3
3
−5 −7 −1.0 −2 −3
7 0.01
2
3
5 7 0.1
IC, Collector Current (A)
Output Capacitance Cob − (pF)
100
7
2SC3647
3
2
For PNP minus sign is omitted
7 0.01
2 7
5 7 0.1
2
10
3
5 7 1.0
2
IC, Collector Current (A)
Figure 10. fT − IC
−1000
7
5
2SA1417
IC / IB = 10
3
2
−100
25°C
7
5
TA = 75°C
3
2
−10
−25°C
7 −0.01
2
3
2
3
5 7 −0.1 2 3
5 7 −1.0
IC, Collector Current (A)
2
3
3
2SA1417 / 2SC3647
f = 1 MHz
7
2SA1417
5
3
2
2SC3647
10
7
5
3
VCE(sat), Collector−to−Emitter Saturation Voltage − (mV)
fT, Gain−Bandwidth Product − (Mhz)
VCE(sat), Collector−to−Emitter Saturation Voltage − (mV)
100
2SA1417
5
5 7 1.0
Figure 9. hFE − IC
2SA1417 / 2SC3647
VCE = 10 V
2
3
IC, Collector Current (A)
Figure 8. hFE − IC
3
2
For PNP minus sign is omitted
7 1.0
2
3
5 7 10
2
3
2
VCB, Collector−to−Base Voltage (V)
Figure 11. Cob − VCB
1000
2SC3647
IC / IB = 10
7
5
3
2
100
7
5
Tc = 75°C
25°C
3
2
10
7 −0.01
−25°C
2
3
5 7 −0.1 2 3
5 7 −1.0
IC, Collector Current (A)
Figure 13. VCE (sat) − IC
Figure 12. VCE (sat) − IC
www.onsemi.com
4
5 7 100
2
3
2SA1417, 2SC3647
−10
2SA1417
IC / IB = 10
7
5
3
2
−1.0
TA = − 25°C
25°C
7
5
75°C
3
−7 −0.01 2
3
5 7 −0.1
2
3
5 7 −1.0
2
3
IC, Collector Current (A)
VBE(sat), Base−to−Emitter Saturation Voltage (V)
VBE(sat), Base−to−Emitter Saturation Voltage (V)
TYPICAL CHARACTERISTICS (continued)
10
2SC3647
IC / IB = 10
7
5
3
2
TA = − 25°C
7
5
3
75°C
7 0.01
2
3
0.1
7
5
3
2
1.8
2SA1417 / 2SC3647
1 ms
10 ms
100 ms
DC Operation
For PNP MINUS SIGN IS OMITTED
TA = 25°C
Single pulse
Mounted on a ceramic board 250 mm2 X 0.8 mm
0.01
7
55 7
1.0
2
3
5 7 10
2
3
7 0.1
2
3
5
7 1.0
2
3
Figure 15. VBE (sat) − IC
PC, Collector Dissipation (W)
IC, Collector Current (A)
1.0
7
5
3
2
5
IC, Collector Current (A)
Figure 14. VBE (sat) − IC
5
I =3A
3 CP
IC = 2 A
2
25°C
1.0
2SA1417 / 2SC3647
Mounted on a ceramic board
(250 mm2 x 0.8 mm)
1.6
1.5
1.4
1.2
1.0
0.8
0.6
0.5
0.4
Infinite Heat Sink
0.2
5 7 100
0
0
2
20
40
60
80
100
120
Ta Ambient Temperature (°C)
VCE, Collector−to−Emitter Voltage (V)
Figure 16. A S O
Figure 17. PC − Ta
www.onsemi.com
5
140
160
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−89 / PCP−1
CASE 419AU
ISSUE O
DOCUMENT NUMBER:
DESCRIPTION:
98AON79746E
SOT−89 / PCP−1
DATE 30 APR 2012
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
onsemi Website: www.onsemi.com
◊
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative