Bipolar Transistor
(−)50 V, (−)5 A, Low VCE(sat),
(PNP)NPN Single TP/TP−FA
2SB1203/2SD1803
Features
• Low Collector−to−Emitter Saturation Voltage
• Excellent Linearity of hFE
• Small and Slim Package Making It Easy to Make
•
•
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ELETRICAL CONNECTION
2SB1203/2SD1803−Applied Sets Smaller
High Current and High fT
Fast Switching Speed
2.4
1
2.4
1
Applications
• Relay Drivers, High−Speed Inverters, Converters, and Other General
High−Current Switching Applications
3
2SB1203
3
2SD1803
ABSOLUTE MAXIMUM RATINGS (at Ta = 25°C)
Symbol
Parameter
Condition
Rating
Unit
VCBO
Collector−to−Base Voltage
(−)60
V
VCEO
Collector−to−Emitter
Voltage
(−)50
V
VEBO
Emitter−to−Base Voltage
(−)6
V
IC
Collector Current
(−)5
A
ICP
Collector Current (Pulse)
(−)8
A
PC
Collector Dissipation
1
W
20
W
Tc = 25°C
Tj
Junction Temperature
150
°C
Tstg
Storage Temperature
−55 to
+150
°C
IPAK / TP
CASE 369AJ
DPAK / TP−FA
CASE 369AH
MARKING DIAGRAM
B1203
D1803
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
© Semiconductor Components Industries, LLC, 2013
May, 2021 − Rev. 2
1
Publication Order Number:
2SD1803/D
2SB1203/2SD1803
ELECTRICAL CHARACTERISTICS (at TA = 25°C)
Symbol
Max
Unit
ICBO
Collector Cutoff Current
Parameter
VCB = (−)40 V, IE = 0 A
Conditions
(−)1
mA
IEBO
Emitter Cutoff Current
VEB = (−)4 V, IC = 0 A
(−)1
mA
hFE1
DC Current Gain
VCE = (−)2 V, IC = (−)0.5 A
70
(Note 1)
VCE = (−)2 V, IC = (−)4 A
35
hFE2
fT
Min
Typ
400
(Note 1)
Gain−Bandwidth Product
VCE = (−)5 V, IC = (−)1 A
(130)180
MHz
Output Capacitance
VCB = (−)10 V, f = 1 MHz
(60)40
pF
VCE(sat)
Collector−to−Emitter Saturation
Voltage
IC = (−)3 A, IB = (−)0.15 A
(−280)220
(−550)400
mV
VBE(sat)
Base−to−Emitter Saturation Voltage
IC = (−)3 A, IB = (−)0.15 A
(−)0.95
(−)1.3
V
Cob
V(BR)CBO
Collector−to−Base Breakdown
Voltage
IC = (−)10 mA, IE = 0 A
(−)60
V
V(BR)CEO
Collector−to−Emitter Breakdown
Voltage
IC = (−)1 mA, RBE = ∞
(−)50
V
V(BR)EBO
Emitter−to−Base Breakdown
Voltage
IE = (−)10 mA, IC = 0 A
(−)6
V
ton
Turn−On Time
tstg
Storage Time
tf
See Specified Test Circuit
Fall Time
(50)50
ns
(450)500
ns
(20)20
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. The 2SB1203/2SD1803 are classified by 0.5 A hFE as follows:
Rank
Q
R
S
T
hFE
70 to 140
100 to 200
140 to 280
200 to 400
Switching Time Test Circuit
IB1
PW = 20 ms
D.C. ≤ 1%
INPUT
OUTPUT
IB2
VR
RB
50 W
RL
+
100 mF
+
400 mF
VCC = 25 V
VBE = −5 V
IC = 10 IB1 = −10 IB2 = 2 A
For PNP, the polarity is reversed.
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2
2SB1203/2SD1803
2SB1203
From top
−100 mA
−4 −90 mA
−80 mA
−70 mA
−3 −60 mA
5
−50 mA
−40 mA
IC, Collector Current (A)
IC, Collector Current (A)
−5
−30 mA
−20 mA
−2
−10 mA
−1
IB = 0
−0.4
−0.8
−1.2
−1.6
IC, Collector Current (A)
3
15 mA
2
10 mA
5 mA
0
−2.0
IB = 0
0
0.4
0.8
1.2
1.6
VCE, Collector−to−Emitter Voltage (V)
Figure 1. IC − VCE
Figure 2. IC − VCE
5
2SB1203
−30 mA
−4
−25 mA
−3
−15 mA
−10 mA
−2
−5 mA
−1
4
25 mA
20 mA
3
15 mA
10 mA
2
5 mA
1
IB = 0
0
−8
−10
−2
−4
−6
VCE, Collector−to−Emitter Voltage (V)
IB = 0
0
4
2
6
8
VCE, Collector−to−Emitter Voltage (V)
−6
6
2SB1203
VCE = −2 V
−5
2SD1803
VCE = 2 V
IC, Collector Current (A)
5
−4
−3
Ta = 75°C
−2
25°C
−1
−0.4
−0.6
−0.8
−1.0
4
3
Ta = 75°C
2
25°C
1
−25°C
−0.2
10
Figure 4. IC − VCE
Figure 3. IC − VCE
IC, Collector Current (A)
2.0
2SD1803
30 mA
−20 mA
0
0
25 mA
20 mA
VCE, Collector−to−Emitter Voltage (V)
−5
0
0
4
1
IC, Collector Current (A)
0
0
2SD1803
From top
50 mA
45 mA
40 mA
35 mA
30 mA
0
−1.2
−25°C
0
0.2
0.4
0.6
0.8
1.0
VBE, Base−to−Emitter Voltage (V)
VBE, Base−to−Emitter Voltage (V)
Figure 6. IC − VBE
Figure 5. IC − VBE
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3
1.2
2SB1203/2SD1803
1000
7
5
2SB1203
VCE = −2 V
Ta = 75°C
3
hFE, DC Current Gain
hFE, DC Current Gain
1000
7
5
2
−25°C
25°C
100
7
5
3
3
Ta = 75°C
25°C
−25°C
2
100
7
5
3
2
10
2SD1803
VCE = 2 V
2
10
2 3 5 7−10
5 7
−0.01 2 3 5 7−0.1 2 3 5 7−1.0
IC, Collector Current (A)
5 70.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10
IC, Collector Current (A)
Figure 8. hFE — IC
1000
7
5
2SB1203
VCE = −5 V
fT, Gain−Bandwidth Product (MHz)
fT, Gain−Bandwidth Product (MHz)
Figure 7. hFE — IC
3
2
100
7
5
3
2
10
2 3
2
5 7−0.1
3
5 7−1.0
2
2SD1803
VCE = 5 V
3
2
100
7
5
3
2
10
5 7−10
3
1000
7
5
IC, Collector Current (A)
2 3
5 7 0.1 2 3 5 7 1.0 2 3
IC, Collector Current (A)
Figure 10. fT − IC
Figure 9. fT − IC
5
2SB1203
f = 1 MHz
3
Cob, Output Capacitance (pF)
Cob, Output Capacitance (pF)
5
2
100
7
5
3
2
10
5 7 −1.0
2
3
5 7 −10
5 7 10
2
3
2
100
7
5
3
2
10
5 7−100
2SD1803
f = 1 MHz
3
VCB, Collector−to−Base Voltage (V)
5 7 1.0
2
3
5 7 10
2
3
5 7 100
VCB, Collector−to−Base Voltage (V)
Figure 11. Cob − VCB
Figure 12. Cob − VCB
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4
5
3
2
5
3
2
2SB1203
IC / IB = 20
VCE(sat), Collector−to−Emitter
Saturation Voltage (mV)
VCE(sat), Collector−to−Emitter
Saturation Voltage (mV)
2SB1203/2SD1803
−1000
7
5
3
2
−100
7
5
3
25°C
Ta = 75°C
−25°C
2
−10
2SD1803
IC / IB = 20
1000
7
5
3
2
Ta = 75°C
5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0
Figure 14. VCE(sat) — IC
5
3
2
−1.0
Ta = −25°C
7
3
25°C
5
3
2
1.0
75°C
5
5 7−0.01 2 3 5 7−0.1 2 3
2SD1803
IC / IB = 20
7
VBE(sat), Base−to−Emitter
Saturation Voltage (V)
VBE(sat), Base−to−Emitter
Saturation Voltage (V)
10
2SB1203
IC / IB = 20
7
Ta = −25°C
75°C
5
3
5 7 −1.0 2 3 5 7−10
5 7 0.01 2 3 5 7 0.1
24
2SB1203 / 2SD1803
100 ms
1 ms
10 ms
DC Operation Ta = 25°C
DC Operation Tc = 25°C
0.1
7
5
3 Tc = 25°C
2 Single Pulse
For PNP, the minus sign is omitted.
0.01
0.1 2 3 5 7 1.0 2 3 5 7 10
5 7 1.0
2 3 5 7 10
Figure 16. VBE(sat) − IC
PC, Collector Dissipation (W)
IC, Collector Current (A)
1.0
7
5
3
2
ICP
IC
2 3
IC, Collector Current (A)
Figure 15. VBE(sat) − IC
2
25°C
7
IC, Collector Current (A)
10
7
5
3
2
2 3 5 7 10
IC, Collector Current (A)
Figure 13. VCE(sat) — IC
−10
−25°C
2
10
5 7−0.01 2 3 5 7−0.1 2 3 5 7 −1.0 2 3 5 7−10
IC, Collector Current (A)
25°C
100
7
5
3
2 3
20
16
Ideal Heat Dissipation
12
8
4
0
5 7 100
2SB1203 / 2SD1803
No Heat Sink
1
0
20
40
60
80
100
120
Ta, Ambient Temperature (°C)
VCE, Collector−to−Emitter Voltage (V)
Figure 18. PC − Ta
Figure 17. ASO
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5
140
160
2SB1203/2SD1803
ORDERING INFORMATION
Device
Package
Shipping
memo
2SB1203S−E
TP
500pcs./bag
Pb Free
2SB1203S−H
TP
500pcs./bag
Pb Free and Halogen Free
2SB1203T−H
TP
500pcs./bag
Pb Free and Halogen Free
2SD1803S−E
TP
500pcs./bag
Pb Free
2SD1803S−H
TP
500pcs./bag
Pb Free and Halogen Free
2SD1803T−E
TP
500pcs./bag
Pb Free
2SD1803T−H
TP
500pcs./bag
Pb Free and Halogen Free
2SB1203S−TL−E
TP−FA
700pcs./bag
Pb Free
2SB1203S−TL−H
TP−FA
700pcs./bag
Pb Free and Halogen Free
2SB1203T−TL−E
TP−FA
700pcs./bag
Pb Free
2SB1203T−TL−H
TP−FA
700pcs./bag
Pb Free and Halogen Free
2SD1803S−TL−E
TP−FA
700pcs./bag
Pb Free
2SD1803S−TL−H
TP−FA
700pcs./bag
Pb Free and Halogen Free
2SD1803T−TL−E
TP−FA
700pcs./bag
Pb Free
2SD1803T−TL−H
TP−FA
700pcs./bag
Pb Free and Halogen Free
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK / TP−FA
CASE 369AH
ISSUE O
DOCUMENT NUMBER:
98AON66236E
DESCRIPTION:
DPAK / TP−FA
DATE 30 JAN 2012
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
IPAK / TP
CASE 369AJ
ISSUE O
DOCUMENT NUMBER:
DESCRIPTION:
98AON66237E
IPAK / TP
DATE 30 JAN 2012
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
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