Ordering number : EN8635A
2SK3745LS
N-Channel Power MOSFET
http://onsemi.com
1500V, 2A, 13Ω, TO-220F-3FS
Features
•
•
•
•
Low ON-resistance, low input capacitance, ultrahigh-speed switching
High reliability (Adoption of HVP process)
Micaless package facilitating mounting
Avalanche resistance guarantee
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
Unit
1500
V
±20
V
2
A
ID*
IDP
Drain Current (Pulse)
4
A
2.0
W
Allowable Power Dissipation
PD
35
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
IAV
41
mJ
2
A
Avalanche Current *2
Tc=25°C
*Shows chip capability
*1 VDD=50V, L=20mH, IAV=2A (Fig.1)
*2 L≤20mH, single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7528-001
• Package
: TO-220F-3FS
• JEITA, JEDEC
: SC-67
• Minimum Packing Quantity : 50 pcs./magazine
4.7
10.16
3.18
2SK3745LS-1E
Marking
Electrical Connection
6.68
3.3
2.54
3.23
15.8
15.87
2
K3745
LOT No.
1
12.98
2.76
1.47 MAX
3
0.8
1
2.54
2
3
0.5
2.54
Semiconductor Components Industries, LLC, 2013
July, 2013
1 : Gate
2 : Drain
3 : Source
TO-220F-3FS
53012 TKIM TC-00002761/N1505QB MSIM TB-00001890 No.8635-1/7
2SK3745LS
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
Ratings
Conditions
min
typ
1500
ID=1mA, VGS=0V
VDS=1200V, VGS=0V
Gate-to-Source Leakage Current
IGSS
Cutoff Voltage
VGS(off)
VGS=16V, VDS=0V
VDS=10V, ID=1mA
2.5
Forward Transfer Admittance
| yfs |
VDS=20V, ID=1A
0.7
Static Drain-to-Source On-State Resistance
RDS(on)
ID=1A, VGS=10V
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
td(on)
tr
Rise Time
Turn-OFF Delay Time
Fall Time
td(off)
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
μA
±10
μA
1.4
IS=2A, VGS=0V
V
S
10
VDS=200V, VGS=10V, ID=2A
13
Ω
380
pF
70
pF
40
pF
12
ns
37
ns
152
ns
59
ns
37.5
nC
2.7
nC
20
nC
0.88
1.2
V
Fig.2 Switching Time Test Circuit
10V
0V
≥50Ω
RG
VDD=200V
VIN
ID=1A
RL=200Ω
VIN
DUT
VDD
50Ω
100
3.5
See Fig.2
L
10V
0V
Unit
V
VDS=30V, f=1MHz
Fig.1 Avalanche Resistance Test Circuit
max
D
PW=10μs
D.C.≤0.5%
VOUT
G
2SK3745LS
P.G
RGS=50Ω
S
Ordering Information
Device
2SK3745LS-1E
Package
Shipping
memo
TO-220F-3FS
50pcs./magazine
Pb Free
No.8635-2/7
2SK3745LS
ID -- VDS
4.0
VDS=20V
pulse
8V
2.5
6V
2.0
1.5
5V
1.0
Tc= --25°C
2.5
10V
3.0
Drain Current, ID -- A
Drain Current, ID -- A
3.5
ID -- VGS
3.0
Tc=25°C
pulse
2.0
25°C
1.5
75°C
1.0
0.5
0.5
VGS=4V
0
0
0
5
10
15
20
25
30
35
40
45
Drain-to-Source Voltage, VDS -- V
50
0
4
6
8
10
12
14
16
18
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
30
2
IT07118
20
IT07119
RDS(on) -- Tc
30
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
25
20
Tc=75°C
25°C
10
--25°C
5
2
4
6
8
10
12
14
16
Gate-to-Source Voltage, VGS -- V
| yfs | -- ID
°C
25
1.0
=
Tc
5
A
=1
ID
10
5
--25
0
5°C
--2
°C
75
3
2
5
7
2
0.1
3
5
7
Drain Current, ID -- A
2
1.0
125
150
IT07121
1.0
7
5
3
2
0.1
7
5
0.4
0.6
0.8
1.0
Diode Forward Voltage, VSD -- V
1.2
IT07123
Ciss, Coss, Crss -- VDS
5
f=1MHz
3
2
Ciss, Coss, Crss -- pF
td(off)
2
100
tf
7
5
3
tr
2
1000
7
5
Ciss
3
2
Co
ss
100
7
5
Crss
3
2
td(on)
10
0.1
100
3
2
IT07122
VDD=200V
VGS=10V
3
75
VGS=0V
0.01
0.2
3
SW Time -- ID
5
50
IS -- VSD
3
2
3
25
10
7
5
2
=1
S
G
V
,
Case Temperature, Tc -- °C
3
7
15
IT07120
VDS=20V
0.1
Switching Time, SW Time -- ns
20
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
5
18
0V
0
--50
0
0
20
5°C
25°C
--25°C
15
25
Tc=
7
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
ID=1A
10
2
3
5
7
1.0
Drain Current, ID -- A
2
3
IT09037
0
5
10
15
20
25
30
35
40
Drain-to-Source Voltage, VDS -- V
45
50
IT09038
No.8635-3/7
2SK3745LS
VGS -- Qg
10
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
7
6
5
4
3
2
10
ID=2A
2
μs
3
8
0μ
s
1m
s
1
10 0ms
C 0m
op
s
er
at
io
n
1.0
7
5
D
3
2
Operation in this area
is limited by RDS(on).
0.1
7
5
3
Tc=25°C
Single pulse
2
1
0
10
0
20
30
Total Gate Charge, Qg -- nC
0.01
1.0
40
2
3
5 7 10
Allowable Power Dissipation, PD -- W
1.5
1.0
0.5
0
3
5 7 100
2
3
5 7 1000
2
IT07127
PD -- Tc
40
2.0
2
Drain-to-Source Voltage, VDS -- V
IT07126
PD -- Ta
2.5
Allowable Power Dissipation, PD -- W
IDP=4A(PW≤10μs)
10
9
ASO
7
5
VDS=200V
ID=2A
35
30
25
20
15
10
5
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT07128
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT07129
No.8635-4/7
2SK3745LS
Magazine Specification
2SK3745LS-1E
No.8635-5/7
2SK3745LS
Outline Drawing
2SK3745LS-1E
Mass (g) Unit
1.8
mm
* For reference
No.8635-6/7
2SK3745LS
Note on usage : Since the 2SK3745LS is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No.8635-7/7