Ordering number : EN7767B
2SK3747
N-Channel Power MOSFET
http://onsemi.com
1500V, 2A, 13Ω, TO-3PF-3L
Features
•
•
•
•
Low ON-resistance, low input capacitance, ultrahigh-speed switching
High reliability (Adoption of HVP process)
Attachment workability is good by Mica-less package
Avalanche resistance guarantee
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
ID
IDP
Allowable Power Dissipation
PD
Unit
1500
V
±35
V
PW≤10μs, duty cycle≤1%
Tc=25°C
2
A
4
A
3.0
W
50
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
IAV
41
mJ
2
A
Avalanche Current *2
Note : *1 VDD=50V, L=20mH, IAV=2A (Fig.1)
*2 L≤20mH, single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7538A-002
• Package
: TO-3PF-3L
• JEITA, JEDEC
: SC-94
• Minimum Packing Quantity : 30 pcs./magazine
2SK3747-1E
5.5
4.5
15.5
3.0
Marking
Electrical Connection
10.0
3.6
3.5
2.0
5.0
25.0
24.5
2
19.3
4.0
0.75
2
3
3.3
1
5.45
5.45
K3747
LOT No.
2.0
2.0
1
2.0
0.9
3
1 : Gate
2 : Drain
3 : Source
TO-3PF-3L
Semiconductor Components Industries, LLC, 2013
July, 2013
53012 TKIM TC-00002763/62005QB MSIM TB-00001301 / 81004QB TSIM TB-00000018 No.7767-1/7
2SK3747
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
Ratings
Conditions
min
typ
1500
ID=1mA, VGS=0V
VDS=1200V, VGS=0V
Gate-to-Source Leakage Current
IGSS
Cutoff Voltage
VGS(off)
VGS=16V, VDS=0V
VDS=10V, ID=1mA
2.5
Forward Transfer Admittance
| yfs |
VDS=20V, ID=1A
0.7
Static Drain-to-Source On-State Resistance
RDS(on)
ID=1A, VGS=10V
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
td(on)
tr
Rise Time
Turn-OFF Delay Time
Fall Time
td(off)
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
μA
±10
μA
1.4
10
IS=2A, VGS=0V
V
S
13
Ω
380
pF
70
pF
40
pF
12
ns
37
ns
152
ns
59
ns
37.5
nC
VDS=200V, VGS=10V, ID=2A
2.7
nC
20
nC
0.88
1.2
V
Fig.2 Switching Time Test Circuit
VIN
L
VDD=200V
10V
0V
ID=1A
RL=200Ω
VIN
2SK3747
D
VDD
50Ω
100
3.5
See Fig.2
≥50Ω
10V
0V
Unit
V
VDS=30V, f=1MHz
Fig.1 Avalanche Resistance Test Circuit
max
VOUT
PW=10μs
D.C.≤0.5%
G
2SK3747
P.G
RGS=50Ω
S
Ordering Information
Device
2SK3747-1E
Package
Shipping
memo
TO-3PF-3L
30pcs./magazine
Pb Free
No.7767-2/7
2SK3747
ID -- VDS
4.0
VDS=20V
pulse
8V
2.5
6V
2.0
1.5
5V
1.0
Tc= --25°C
2.5
10V
3.0
Drain Current, ID -- A
Drain Current, ID -- A
3.5
ID -- VGS
3.0
Tc=25°C
pulse
2.0
25°C
1.5
75°C
1.0
0.5
0.5
VGS=4V
0
0
0
5
10
15
20
25
30
35
40
45
Drain-to-Source Voltage, VDS -- V
50
0
4
6
8
10
12
14
16
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
ID=1A
VGS=10V
Tc=75°C
25°C
10
--25°C
5
2
4
6
8
10
12
14
16
Gate-to-Source Voltage, VGS -- V
| yfs | -- ID
°C
25
1.0
5
--25
0
25
5°C
--2
°C
75
3
2
5
7
2
0.1
3
5
7
Drain Current, ID -- A
2
1.0
150
IT07133
3
2
0.1
7
5
0.4
0.6
0.8
1.0
Diode Forward Voltage, VSD -- V
1.2
IT07135
Ciss, Coss, Crss -- VDS
5
f=1MHz
3
2
Ciss, Coss, Crss -- pF
td(off)
2
100
tf
7
5
3
tr
2
1000
7
5
Ciss
3
2
Co
ss
100
7
5
Crss
3
2
td(on)
10
0.1
125
1.0
7
5
IT07134
VDD=200V
VGS=10V
3
100
3
2
0.01
0.2
3
SW Time -- ID
5
75
VGS=0V
3
2
3
50
IS -- VSD
10
7
5
2
=
Tc
5
Case Temperature, Tc -- °C
3
7
10
IT07132
VDS=20V
0.1
Switching Time, SW Time -- ns
20
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
5
18
15
0
--50
0
0
20
5°C
25°C
--25°C
15
25
Tc=
7
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
20
20
IT07131
RDS(on) -- Tc
30
ID=1A
25
18
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
30
2
IT07130
10
2
3
5
7
1.0
Drain Current, ID -- A
2
3
IT09037
0
5
10
15
20
25
30
35
40
Drain-to-Source Voltage, VDS -- V
45
50
IT09038
No.7767-3/7
2SK3747
VGS -- Qg
10
3
2
n
Drain Current, ID -- A
io
2
3
at
3
er
4
m
s
0m
s
10
op
5
s
6
10
1.0
7
5
0μ
s
1m
7
10
ID=2A
2
8
Operation in this area
is limited by RDS(on).
0.1
7
5
3
2
1
0
10
0
20
30
Total Gate Charge, Qg -- nC
Tc=25°C
Single pulse
0.01
1.0
40
2 3
5 7 10
Allowable Power Dissipation, PD -- W
2.5
2.0
1.5
1.0
0.5
5 7 100
2 3
5 71000 2 3
IT07139
PD -- Tc
60
3.0
2 3
Drain-to-Source Voltage, VDS -- V
IT07138
PD -- Ta
3.5
Allowable Power Dissipation, PD -- W
IDP=4A(PW≤10μs)
C
D
Gate-to-Source Voltage, VGS -- V
9
ASO
7
5
VDS=200V
ID=2A
50
40
30
20
10
0
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT07140
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT07141
No.7767-4/7
2SK3747
Magazine Specification
2SK3747-1E
No.7767-5/7
2SK3747
Outline Drawing
2SK3747-1E
Mass (g) Unit
5.5
mm
* For reference
No.7767-6/7
2SK3747
Note on usage : Since the 2SK3747 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No.7767-7/7