2V7002LT1G

2N7002L, 2V7002L Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 Features • 2V Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable (2V7002L) These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(on) MAX ID MAX 60 V 7.5 W @ 10 V, 500 mA 115 mA MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDSS 60 Vdc Drain−Gate Voltage (RGS = 1.0 MW) VDGR 60 Vdc ID ID mAdc IDM ±115 ±75 ±800 VGS VGSM ±20 ±40 Vdc Vpk Drain Current − Continuous TC = 25°C (Note 1) − Continuous TC = 100°C (Note 1) − Pulsed (Note 2) Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 ms) N−Channel 3 1 2 Characteristic Symbol Total Device Dissipation FR−5 Board (Note 3) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient PD Total Device Dissipation (Note 4) Alumina Substrate, TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature MARKING DIAGRAM 3 THERMAL CHARACTERISTICS RqJA Max Unit 225 1.8 556 mW mW/°C °C/W 300 2.4 417 mW mW/°C °C/W −55 to +150 °C PD RqJA TJ, Tstg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. 3. FR−5 = 1.0 x 0.75 x 0.062 in. 4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina. 1 2 702 MG G SOT−23 CASE 318 STYLE 21 1 702 = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. ORDERING INFORMATION Device 2N7002LT1G 2N7002LT3G Package Shipping† SOT−23 (Pb−Free) 3000 Tape & Reel 2V7002LT1G 2V7002LT3G 2N7002LT1H* 10,000 Tape & Reel 3000 Tape & Reel SOT−23 (Pb−Free) 10,000 Tape & Reel 3000 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *Not for new design. © Semiconductor Components Industries, LLC, 2013 October, 2016 − Rev. 8 1 Publication Order Number: 2N7002L/D 2N7002L, 2V7002L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 60 − − Vdc IDSS − − − − 1.0 500 mAdc Gate−Body Leakage Current, Forward (VGS = 20 Vdc) IGSSF − − 100 nAdc Gate−Body Leakage Current, Reverse (VGS = −20 Vdc) IGSSR − − −100 nAdc VGS(th) 1.0 − 2.5 Vdc On−State Drain Current (VDS ≥ 2.0 VDS(on), VGS = 10 Vdc) ID(on) 500 − − mA Static Drain−Source On−State Voltage (VGS = 10 Vdc, ID = 500 mAdc) (VGS = 5.0 Vdc, ID = 50 mAdc) VDS(on) − − − − 3.75 0.375 − − − − − − − − 7.5 13.5 7.5 13.5 gFS 80 − − mS Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Ciss − − 50 pF Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Coss − − 25 pF Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Crss − − 5.0 pF td(on) − − 20 ns td(off) − − 40 ns VSD − − −1.5 Vdc IS − − −115 mAdc ISM − − −800 mAdc Characteristic OFF CHARACTERISTICS Drain−Source Breakdown Voltage (VGS = 0, ID = 10 mAdc) Zero Gate Voltage Drain Current (VGS = 0, VDS = 60 Vdc) TJ = 25°C TJ = 125°C ON CHARACTERISTICS (Note 5) Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc) Static Drain−Source On−State Resistance (VGS = 10 V, ID = 500 mAdc) (VGS = 5.0 Vdc, ID = 50 mAdc) Vdc rDS(on) TC = 25°C TC = 125°C TC = 25°C TC = 125°C Forward Transconductance (VDS ≥ 2.0 VDS(on), ID = 200 mAdc) Ohms DYNAMIC CHARACTERISTICS SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Turn−Off Delay Time (VDD = 25 Vdc, ID ^ 500 mAdc, RG = 25 W, RL = 50 W, Vgen = 10 V) BODY−DRAIN DIODE RATINGS Diode Forward On−Voltage (IS = 11.5 mAdc, VGS = 0 V) Source Current Continuous (Body Diode) Source Current Pulsed 5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 2N7002L, 2V7002L TYPICAL ELECTRICAL CHARACTERISTICS 2.0 1.0 VDS = 10 V TA = 25°C 1.6 VGS = 10 V 1.4 9V 1.2 I D, DRAIN CURRENT (AMPS) I D, DRAIN CURRENT (AMPS) 1.8 8V 1.0 7V 0.8 6V 0.6 0.4 5V 0.2 4V 3V 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 9.0 0.8 125°C 0.6 0.4 0.2 10 0 2.4 2.2 1.8 VGS = 10 V ID = 200 mA 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -60 -20 +20 +60 T, TEMPERATURE (°C) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VGS, GATE SOURCE VOLTAGE (VOLTS) 9.0 10 Figure 2. Transfer Characteristics VGS(th) , THRESHOLD VOLTAGE (NORMALIZED) r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) Figure 1. Ohmic Region 2.0 25°C -55°C +100 +140 1.2 1.05 VDS = VGS ID = 1.0 mA 1.1 1.10 1.0 0.95 0.9 0.85 0.8 0.75 0.7 -60 Figure 3. Temperature versus Static Drain−Source On−Resistance -20 +20 +60 T, TEMPERATURE (°C) +100 Figure 4. Temperature versus Gate Threshold Voltage www.onsemi.com 3 +140 2N7002L, 2V7002L PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN END VIEW RECOMMENDED SOLDERING FOOTPRINT 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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